ESD7381MUT5G Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection
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1 Transient Voltage Suppressors Micro Packaged Diodes for SD Protection The SD738 is designed to protect voltage sensitive components that require ultra low capacitance from SD and transient voltage events. xcellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for SD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2. high speed and antenna line applications. Features Ultra Low Capacitance:.37 pf Low Clamping Voltage Small Body Outline Dimensions:.6 mm x.3 mm Low Body Height:.3 mm Stand off Voltage: 3.3 V Low Leakage Insertion Loss:.3 dbm Response Time is < ns Low Dynamic Resistance < IC6 4 2 Level 4 SD Protection These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications RF Signal SD Protection RF Switching, PA, and Antenna SD Protection Near Field Communications Cathode X3DFN2 CAS 52AF M ORDRING INFORMATION Device Package Shipping SD738MUT5G X3DFN2 (Pb Free) 2 Anode MARKING DIAGRAM PIN = Specific Device Code (Rotated 9 clockwise) = Date Code 5 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. M MAXIMUM RATINGS Rating Symbol Value Unit IC (SD) Contact Air ±2 ±2 kv Total Power Dissipation on FR 5 Board (Note T A = 25 C Thermal Resistance, Junction to Ambient P D R JA 25 4 mw C/W Junction and Storage Temperature Range T J, T stg 4 to +25 C Lead Solder Temperature Maximum ( Second Duration) T L 26 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. xtended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR 5 =. x.75 x.62 in. See Application Note AND838/D for further description of survivability specs. Semiconductor Components Industries, LLC, 22 Publication Order Number: September, 22 Rev. 3 SD738/D
2 LCTRICAL CHARACTRISTICS (T A = 25 C unless otherwise noted) Symbol I PP Parameter Maximum Reverse Peak Pulse Current I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR I T Breakdown I T Test Current *See Application Note AND838/D for detailed explanations of datasheet parameters. I PP Uni Directional TVS LCTRICAL CHARACTRISTICS (T A = 25 C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V RWM 3.3 V Breakdown Voltage (Note 2) V BR I T = ma 5. V Reverse Leakage Current I R V RWM = 3.3 V <. 5 na Clamping Voltage (Note 3) V C I PP = A 8. V Clamping Voltage (Note 3) V C I PP = 3 A V SD Clamping Voltage V C Per IC6 4 2 See Figures and 2 Junction Capacitance C J V R = V, f = Mhz V R = V, f < GHz pf Dynamic Resistance R DYN TLP Pulse.32 Insertion Loss f = Mhz f = 8.5 GHz db 2. Breakdown voltage is tested from pin to 2 and pin 2 to. 3. Non repetitive current pulse at T A = 25 C, per IC6 4 5 waveform. Figure. SD Clamping Voltage Screenshot Positive 8 kv Contact per IC6 4 2 Figure 2. SD Clamping Voltage Screenshot Negative 8 kv Contact per IC
3 I (A) C (pf) V (V) Figure 3. IV Characteristics VBias (V) Figure 4. CV Characteristics db FRQUNCY (Hz) Figure 5. RF Insertion Loss CAPACITANC (pf) V.2 V FRQUNCY Figure 6. Capacitance over Frequency CURRNT (A) 2 5 CURRNT (A) VOLTAG (V) Figure 7. Positive TLP I V Curve VOLTAG (V) Figure 8. Negative TLP I V Curve 3
4 IC Spec. Level Test Voltage (kv) First Peak Current (A) Current at 3 ns (A) Current at 6 ns (A) IC6 4 2 Waveform I peak % 9% 3 ns 6 ns % t P =.7 ns to ns SD Gun TVS Figure 9. IC6 4 2 Spec Oscilloscope 5 Cable 5 Figure. Diagram of SD Test Setup SD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an SD event to as low a voltage as possible. The SD clamping voltage is the voltage drop across the SD protection diode during an SD event per the IC6 4 2 waveform. Since the IC6 4 2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the SD protection diode over the time domain of an SD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all SD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND837/D. % OF PAK PULS CURRNT t r t P PAK VALU I 8 s PULS WIDTH (t P ) IS DFIND AS THAT POINT WHR TH PAK CURRNT DCAY = 8 s HALF VALU I RSM 2 s t, TIM ( s) Figure. 8 X 2 s Pulse Waveform 4
5 PACKAG DIMNSIONS X3DFN2,.62x.32,.355P, (2) CAS 52AF ISSU O PIN INDICATOR (OPTIONAL) D A B NOTS:. DIMNSIONING AND TOLRANCING PR ASM Y4.5M, CONTROLLING DIMNSION: MILLIMTRS..35 C.35 C.5 C.5 C TOP VIW A SID VIW A C SATING PLAN MILLIMTRS DIM MIN MAX A A.5 b D.62 BSC.32 BSC e.355 BSC L.7.23 RCOMMNDD MOUNTING FOOTPRINT*.74.3 e b 2 L.5 M C A B.5 M C A B BOTTOM VIW.3 DIMNSIONS: MILLIMTRS See Application Note AND8398/D for more mounting details *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDRRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an qual Opportunity/Affirmative Action mployer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDRING INFORMATION LITRATUR FULFILLMNT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada mail: orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada urope, Middle ast and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative SD738/D
NSQA6V8AW5T2 Series Transient Voltage Suppressor
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Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
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NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
1N6373-1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors. Unidirectional*
N6373 - N638 Series (ICTE-5 - ICTE-36) 5 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage,
S1AFL - S1MFL. Surface General-Purpose Rectifier
SAFL - SMFL Surface General-Purpose Rectifier Features Ultra Thin Profile Maximum Height of.08 mm UL Flammability 94V 0 Classification MSL Green Mold Compound These Devices are Pb Free, Halogen Free Free
MMQA Quad Common Anode Series Preferred Devices. SC 74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC 74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
1.5SMC6.8AT3 Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.SMC6.8AT3 Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL
NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced
NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel
NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
1SMA5.0AT3 Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping
SA5.0A Series 500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
5 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors Unidirectional The SA5.A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
1PMT5.0AT1/T3 Series. Zener Transient Voltage Suppressor POWERMITE Package
Zener Transient Voltage Suppressor Package The is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor
NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF64MU is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 5 pf deliver
NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF8MU is a eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 2 pf deliver
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional*
P6SMBCAT3G Series, SZP6SMBCAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MMQA, SZMMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA, SZMMQA Quad Common Anode Series SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring
NVTFS5826NL. Power MOSFET 60 V, 24 m, 20 A, Single N Channel
Power MOSFET 6 V, 24 m, 2 A, Single N Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS5826NLWF
NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF615FC is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 27 pf deliver
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
1N5908RL4G Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional*
Preferred Device 5 Watt Mosorb Zener Transient oltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free