SVG***D Series Programmable Overvoltage Protector SVG120D ROHS

Transcription

1 Description This device is especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -V BAT through the gate. This component presents a very low gate triggering current (I GT ) in order to reduce the current consumption on printed circuit board during the firing phase. A particular attention has been given to the internal wire bonding. The 4-point configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. SOP/DIP Package Top Views and Device Symbol NC - No internal connection Terminal typical application names shown in parenthesis SOP Package Top View and Device Symbol NC - No internal connection Terminal typical application names shown in parenthesis Features Dual programmable transient suppressor Wide negative firing voltage range: V GKRM =-120V max Low dynamic switching voltage: V FRM and V GK(BD) Low gate triggering current: I GT =5mA max Peak pulse current: I PP =30A for 10/1000us surge Holding current: I H =150mA min Programmable Overvoltage Protector 1

2 Applications Dual SMD PTCs are typically used as the principle over-current protectors in telecom device. T-1/E-1, ISDN, and xdsl transmission equipment Telecommunications infrastructure PBX's and other switches Set-top box VoIP SLIC ohm PTC TIP Vbat SVG120D GND ohm PTC Typical VoIP SLIC Protection Circuit RING Telecom Standards YD/T CCITT K20 FCC part 68 Bellcore TR-NWT TEST CLAUSE AND TEST # Voltage waveform (μs) Required peak current(a) Second-Level 1 2/10μs first-level 3 10/1000μs TEST CLAUSE AND TEST # 60 Hz power fault time Required peak current(a) Second-Level 2 100ms Second-Level 2 1s Second-Level 2 5s Second-Level 1 300s Second-Level 1 900s 0.93 Programmable Overvoltage Protector 2

3 Absolute Maximum Ratings Symbol Parameter Value Unit I pp I TSM Non-repetitive peak on-state pulse current 10/1000μs 5/310μs 2/10μs Non repetitive surge peak on-state current (sinusoidal) 60Hz 0.1s 1s 5s 300s 900s A A V DRM Maximum voltage LINE/GROUND -120 V V GKRM Maximum voltage GATE/LINE -120 V T A Operating free-air temperature range T STG Storage temperature range T J Junction temperature T L Maximum lead temperature for soldering during 10S 260 Thermal Resistance Symbol Parameter Value Unit RθJA Junction to free air thermal resistance Electrical Characteristics (Tamb=25 ) SOP Package 120 /W DIP Package 100 /W Symbol I D I H V (BO) V F V FRM V GK(BD) I GKS I GT V GT C KA Parameter Off-state current Holding current Breakover voltage Forward voltage Peak forward recovery voltage Gate-cathode impulse breakover voltage Gate reverse current Gate trigger current Gate-cathode trigger voltage Cathode-anode off-state capacitance Programmable Overvoltage Protector 3

4 Parameters Related to The Diode (Tamb=25 ) Parameter Test conditions Min. Typ. Max. Unit. V F forward voltage I F =5A, t w =200μs 3 V V FRM peak forward recovery voltage 10/700μs,1.5kV,R P =10Ω 2/10μs,I F =56A,Rs=45Ω,V GG =-48V,C G =220nF 2/10μs,I F =100A,Rs=50Ω,V GG =-48V,C G =220nF 1.2/50μs,I F =53A,Rs=47Ω,V GG =-48V,C G =220nF 1.2/50μs,I F =96A,Rs=52Ω,V GG =-48V,C G =220nF V Parameters Related to The Protection Thyristor (Tamb=25 ) Parameter Test conditions Min. Typ. Max. Unit. I D off-state current V D =V DRM, V GK =0 T J =25-5 μa T J =85-50 μa 10/700μs,1.5kV,R P =10Ω,Ipp=30A -58 V BO breakover voltage 2/10μs, I T =-56A, Rs=45Ω,V GG =-48V,C G =220nF 2/10μs, I T =-100A, Rs=50Ω,V GG =-48V,C G =220nF 1.2/50μs, I T =-53A, Rs=47Ω,V GG =-48V,C G =220nF 1.2/50μs, I T =-96A, Rs=52Ω,V GG =-48V,C G =220nF V I H holding current I T =-1A, di/dt=1a/ms,v GG =-48V -150 ma I GAS gate reverse current V GG =V GK = V GKRM, V KA =0 T J =25-5 μa T J =85-50 μa I GT gate trigger current I T =3A, tp(g) 20μs,V GG =-48V 5 ma V GT gate trigger voltage I T =3A, tp(g) 20μs,V GG =-48V 2.5 V Q GS gate switching charge 1.2/50μs, I T =-53A, Rs=47Ω,V GG =-48V,C G =220nF 0.1 μc C AK anode-cathode offstate V D =-3V 110 pf f=1mhz,vd=1v,i capacitance G =0 V D =-48V 55 pf Electrical Parameters (Tamb=25 ) Programmable Overvoltage Protector 4

5 Product Dimensions NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition. B. Body dimensions do not include mold flash or protrusion. C. Mold flash or protrusion shall not exceed 0.15 (0.006). D. Lead tips to be planar within ±0.051 (0.002). Programmable Overvoltage Protector 5

6 Package Information NOTES: A. Taped devices are supplied on a reel of the following dimensions:- Reel diameter: Reel hub diameter : Reel axial hole: B devices are on a reel. Reflow Soldering and Rework Recommendations Recommended reflow methods, Recommended reflow methods: IR, Vapor phase oven, hot air oven, wave solder. Devices can be cleaned using standard industry methods and solvents. If a device is removed from the board, it should be discarded and replaced with a new device. Leaded devices are not designed to be compatible with wave soldering manufacturing operations. Lead free reflow curve. T( ) Maximum package Body Temperature(240 ) Melting Temperature of Solder(183 ) Preheat Stable Heat Reflow Cool t(sec) Programmable Overvoltage Protector 6

7 How To Order Device Package Carrier Marking Code Standard Quantity SVG120D SOP Package Embossed Tape Reeled G120D 2500pcs NOTE: Semitel Electronics. a division of Semitel International. Makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Semitel s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Semitel Electronics, reserves the right to discontinue or make changes to its products at any time without notice. Website: For additional information, please contact your local Sales Representative. Copyright 2005, Semitel Electronics. is a registered trademark of Semitel Electronics. All rights reserved. Operation beyond the maximum ratings or improper use may result in device damage and possible electrical arcing and flame. The devices are intended for protection against occasional over-current or over temperature fault conditions and should not be used when repeated fault conditions or prolonged trip events are anticipated. Device performance can be impacted negatively if devices are handled in a manner inconsistent with recommended electronic, thermal, and mechanical procedures for electronic components. Contact information SUZHOU SEMITEL ELECTRONICS CO., LIMITED M3-4, Microsystem Park, No. 2Peiyuan Road, Suzhou Science&Technology Town Tel: Fax: info@semiteltech.com Rev. letter C Date Nov Design Check Audit Approve Walance Michael Ken Fred Programmable Overvoltage Protector 7