TISP4P0xxL1N Overvoltage Protector Series

Transcription

1 *RoHS COMPLIANT Y1801L TISP4P015L1N THRU TISP4P035L1N LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OEROLTAGE PROTECTOR TISP4P0xxL1N Overvoltage Protector Series Designed for ADSL, ADSL, DSL, DSL protection SOT3-5 Package (Top iew) Ion-Implanted Breakdown Region - Precise and Stable oltage (Tip) 1 5 (Tip) Low oltage Overshoot Under Surge Low Off-State Capacitance Device Name DRM Rated for International Surge Wave Shapes (BO) TISP4P015L1N 8 15 TISP4P00L1N 1 0 TISP4P05L1N 16 5 TISP4P035L1N 4 35 Wave Shape Standard I PPSM A 8/0 IEC /1000 GR-1089-CORE 18 Device Symbol NU (Ring) 3 4 (Ring) Terminal typical application names shown in parenthesis. NU - Non-usable; no external electrical connection should be made to this terminal. (Tip) MD-SOT a Description This range of devices is designed to protect xdsl line-driver interfaces from overvoltages up to rated limits. Overvoltages are (Ring) - bances which are induced or conducted onto the telephone line. SD-TISP4-00-a These symmetrical protectors are two-terminal thyristor-crowbar devices. They can be used to protect between conductors, or a pair of devices can be deployed to protect from line to ground. When placed between the xdsl line driver IC and the transformer, this protector will clamp and switch into a low-impedance state, safely diverting the energy transferred by the xdsl coupling transformer. The low capacitance design makes this device suitable for designs from ADSL all the way up to 30 MHz DSL. Telecom ports need protection against Common Mode (Longitudinal) and Differential (Metallic) surges, to comply with international standards such as ITU-T K.0, K.1 or K.45, Telcordia GR-1089-CORE and YD/T. Common Mode surges are resisted by the galvanic isolation of the coupling transformer which is commonly rated to k or greater. Differential surges can be transmitted by the transformer, and can stress the Line Driver Interface IC. As the xdsl interface circuit is designed to operate from 3 khz to to 30 MHz, interface requiring this type of protection. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order Device Package Carrier Order As Reel Quantity TISP4P0xxL1N SOT3-5 Embossed Tape Reeled TISP4P0xxL1NR-S 10,000 Insert xx corresponding to device name. WARNING Cancer and Reproductive Harm OCTOBER REISED JANUARY 018 *RoHS Directive 00/95/EC Jan. 7, 003 including annex and RoHS Recast 011/65/EU June 8, 011. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at

2 Absolute Maximum Ratings, T A = 5 C (Unless Otherwise Noted) Rating Symbol alue Unit Repetitive peak off-state voltage ±8 ±1 DRM 4P05L1N ±16 4P035L1N ±4 Non-repetitive peak impulse current (see Notes 1, and 3) 8/0 µs (IEC , 1./50 µs voltage, 8/0 current combination wave generator) I PPSM ±30 A 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) ±18 Junction temperature T J -40 to +150 C Storage temperature range T stg -65 to +150 C NOTES: 1. Initially the device must be in thermal equilibrium with T J = 5 C.. The surge may be repeated after the device returns to its initial conditions. 3. Rated currents only apply if pins 1 & 5 (Tip) are connected together and pins 3 & 4 (Ring) are connected together. Electrical Characteristics, T A = 5 C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit I DRM Repetitive peak off-state current D = DRM ±1 µa ±15 ±0 (BO) Breakover voltage dv/dt = ±50 /ms, R SOURCE = 300 Ω 4P05L1N ±5 4P035L1N ±35 ±30 ±10 I H Holding current I T = ±5 A, di/dt = ±30 ma/ms 4P05L1N ±30 ma 4P035L1N ±30 C O Off-state capacitance f = 1 MHz, d = 1 rms, D = 4P05L1N 4P035L1N ΔC Delta-capacitance f = 1 MHz, d = 1 rms, D = 1 to DRM 4P05L1N P035L1N pf pf Typical Part Marking -DIGIT PRODUCT CODE Y1 = TISP4P015L1NR Y = TISP4P00L1NR Y3 = TISP4P05L1NR Y4 = TISP4P035L1NR Moisture Sensitivity Level B Y1YWWL MANUFACTURING DATE CODE: Y = YEAR WW = WEEK L = LOT CODE OCTOBER 009 REISED JANUARY 018

3 Parameter Measurement Information +i I PPSM I TSM Quadrant I Switching Characteristic I TRM I T (BO) T I (BO) I H -v (BR)M DRM D I D I D D I DRM DRM I (BR) (BR) +v I (BR) (BR) I DRM (BR)M I H I (BO) (BO) T I T I TRM Quadrant III I TSM Switching Characteristic I PPSM Figure 1. oltage-current Characteristic for Tip and Ring Terminals All Measurements are Referenced to the Ring Terminal -i PM-TISP4xxx-001-a OCTOBER 009 REISED JANUARY 018

4 Typical Characteristics CAPACITANCE vs OFF-STATE OLTAGE TC-4PN-001 f = 1 MHz d = 1 RMS T J = 5 C 7 Capacitance - pf TISP4P015L1N TISP4P00L1N TISP4P05L1N TISP4P035L1N D - Off-State oltage - OCTOBER 009 REISED JANUARY 018

5 DSL Application Examples MF-RX TIP + tº Tx TISP4400M3 Rx Ring Figure 3. TISP4P035L1N xdsl transceiver TIP MF-RX tº Tx TISP4400M3 Rx Ring Figure 4. TISP4P00L1N xdsl transceiver TIP Tx SM Rx Ring TISP4P035L1N CD143A-SR70 xdsl transceiver Figure 5. Recommended PCB Layout T 1 5 T PCB Track NU R 3 4 R PCB Track Figure 6. MD-SOT3-5-xxx OCTOBER 009 REISED JANUARY 018 TISP is a trademark of Bourns Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. Bourns is a registered trademark of Bourns, Inc. in the U.S. and other countries.

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