Fuji IGBT Simulator for Automotive Ver. 6.1 or later Operation manual
|
|
- Harold McDaniel
- 5 years ago
- Views:
Transcription
1 Fuji IGBT Simulator for Automotive Ver. 6. or later Operation manual MT5F36567 Fuji Electric Co., Ltd. All rights reserved
2 End-User Software License Agreement (Caution) Before downloading and using the software, please read the following End-user Software Agreement. By downloading the software, you agree to be bound by the terms of the following agreement. If you don t agree the agreement, remove the software and erase all copies of the software and the related documents. End-User Software License Agreement This is a software license agreement (the Agreement ) between you ( Customer ) and Fuji Electric Co. Ltd. ( Fuji ) with regard to the use of Fuji IGBT Simulator ( Software ).. [Right of Use] This software is available to use without paying additional fees to Fuji. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. 2. [Copyright] Fuji retains the copyright, title and ownership of the software, the manual and related documents. 3. [Prohibitions] You may not reverse engineer, decompile, or disassemble this software. 4. [Limited Warranty] Fuji makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. Fuji pays close attention to the quality of the contents on this simulator. However, such continents are provided as is without guarantees of any kinds. 5. [Program update] The program specification of this software is subject to change without any notice. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 2
3 Contents. Setup p.4 2. Menu p.5 3. Module Selection p.6 4. Thermal Conditions p.7 5. Single Mode Calculation p.8 6. Parameter Sweep Calculation p.3 7. Cycle Mode Calculation p.6 8. Circuit Topology, PWM Method p.25 MT5F36567 Fuji Electric Co., Ltd. All rights reserved 3
4 Software Setup This software operates on Microsoft Windows7, Windows8 and Windows0 systems. Microsoft.NET Framework 3.5 or later is required. Fuji IGBT Simulator doesn t need to be installed. Unzip the downloaded file and copy to a custom folder. Please just double-click on the file IGBTSim.exe to start the simulator. Windows is a registered trademark of the Microsoft Corporation in the U.S. and other countries. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 4
5 Menu 2 The language selection Click the language or 言語 Button to select the language. - English - Japanese - Chinese 2 Help In the "Help Menu you will find links to the Fuji Electric Website to download the actual manual and the actual version of this Software. Your actual version is displayed in the top bar. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 5
6 Selection of Module Click the module selection tab Select Module Series, Circuit, Voltage rating [V ces ] and Current rating [I c ] by clicking on the certain buttons to open the drop down menu 3 3 See the fitting modules by opening the Module dropdown menu and make your choice. Select the flow rate of cooling water (FR=4,6,8,0L/min). 4 Click the Next button if selected the right module Click on the Download Data Sheet button to see the actual data sheets. Clicking the Technical Information button will lead you to the Fuji Web Site which contains technical documents By clicking the Web Site button you can see the Fuji Semiconductor Website. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 6
7 Set Thermal Conditions Input the fixed coolant temperature T W The following calculation is based on a constant coolant temperature T W Junction temperature Thermal resistance Coolant temperature MT5F36567 Fuji Electric Co., Ltd. All rights reserved 7
8 Single Mode Calculation MT5F36567 Fuji Electric Co., Ltd. All rights reserved 8
9 Input Circuit Conditions (Single Mode) Click the "Single Mode" tab Select the circuit topology Refer to 27 page for more details. Select the PWM modulation method. Refer to pages for more details. Input operating conditions. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 9
10 Execution of the Calculation Click the Calculate button to start the computation. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 0
11 Simulation Results (Single Mode) 2 Total loss per arm. = T + D + T2 + D2 + D5 ( arm total loss) 3 2 Total loss of inverter system (In the case of a 3 phase inverter circuit) Total Loss = ( arm total loss) x 6 (In the case of chopper circuit) Total Loss= (T + D) 4 T vj(peak) T vj(ave) 3 Chip junction Temperature. Please see the details in the picture above. ΔT vj T vj(min) T j-w(ave) 4 Coolant temperature T W MT5F36567 Fuji Electric Co., Ltd. All rights reserved
12 Simulation Results (Single Mode) Loss waveforms ( cycle). 2 Temperature waveforms ( cycle). 3 Save the window as image file filename: *.bmp 4 5 Export the results to csv. file Fileextension: *.csv Close this Window by clicking on the Back Button. The Single Mode window will be shown afterwards MT5F36567 Fuji Electric Co., Ltd. All rights reserved 2
13 Parameter Sweep Calculation The sweep function allows to perform a calculation by using one parameter as a variable. It is possible to calculate the losses and the temperature rise in dependence of the selected parameter. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 3
14 Sweep Calculation Click the "Single Mode" tab. 4 2 Activate the Sweep function by marking the checkbox Select the parameter you want to sweep by the radio buttons right next to the parameters. 4 Click the Calculate Button to start the computation. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 4
15 Sweep Calculation Results Calculated losses [W] (vertical axis) Selected sweep parameter(horizontal axis) Calculated temperature rise [ C] (vertical axis) Selected sweep parameter (horizontal axis) MT5F36567 Fuji Electric Co., Ltd. All rights reserved 5
16 Cycle Mode Calculation MT5F36567 Fuji Electric Co., Ltd. All rights reserved 6
17 Cycle Mode Calculation Click the "Cycle Mode" tab You can change the coolant temperature here. Enter gate resistance values for your calculation. 6 4 Select the boundary conditions. Refer to 9 page for more details. 5 You need to change the sampling number according to the number of cycle data 6 Enter the operation pattern. Refer to 20-2 pages for more details. 7 Click the Calculate Button to start the computation. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 7
18 Save / Load Cycle Mode Data 7 8 Click the Save" button to export the operation pattern to a xmlfile Save file name : ****. xml Click the Load button to import an operation pattern from a xml-file Load file name : ****. xml 7 8 MT5F36567 Fuji Electric Co., Ltd. All rights reserved 8
19 Cycle Mode Boundary Conditions Cyclic: Calculation is performed under the condition that the operation pattern will run continuously. The operation pattern Output 0 t t x 2 Time Shot: The operation pattern will only run for one cycle. Initial condition is needed. Output The operation pattern The initial condition - 0 t Time Enter your initial conditions in line. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 9
20 Input of Cycle Operation Pattern Time For more information see p.2 3 Duty In the case of DC lock or chopper, enter the duty values in this column. Otherwise, the entry field value is ignored. 2 Output Current In the case of DC lock mode or chopper enter the I o,peak [A]. Otherwise enter the I o [A rms]. 4 Application Circuit Click on the arrow on the right to open a dropdown menu. Choose the application circuit and PWM modulation mode from the list. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 20
21 Input of Cycle Operation Pattern A If you change a parameter value between two time steps (t), the parameter change will be linear Example A: # #2 (linear change of the output current I o ) (t=0sec, I o =0A t=sec, I o =00A) I o will change linearly from 0A to 00A within sec. A Linear change B Step change A B B If you change a parameter value by using the same time (t), the parameter will have a step change Example B: #3 #4 (stepwise change of I o, PF) t=2sec, I o =50A, PF=0.9 t=2sec, I o =50A, PF=-0.9, at the time of 2sec I o and PF will do a step change from I o =00A to 50A and PF = 0.9 to -0.9 MT5F36567 Fuji Electric Co., Ltd. All rights reserved 2
22 Input of Cycle Operation Pattern How to use copy/paste for cells Select the cell you want to copy (or more cells), right-click and choose Copy from the dropdown menu. Select the cell to paste the values (or more cells), right-click and choose Paste from the dropdown menu. How to copy/paste a whole line Select the cell which is left to the line you want to copy, right-click and choose Copy from the dropdown menu. Select the cell which is left to the line you want to paste the values, right-click and choose Paste from the dropdown. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 22
23 Simulation Results (Cycle Mode) Total loss per arm. = T + D + T2 + D2 + D5 Total losses of inverter system (In the case of a 3 phase inverter circuit) Total Loss = ( arm total loss) x 6 (In the case of chopper circuit) Total Loss = ( T + D) 4 3 Chip junction Temperature Please see the details in the left picture 4 Coolant temperature. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 23
24 Simulation Results (Cycle Mode) Loss Waveforms: T, D 2 3 Temperature Waveforms: T j(t), T j(d), T W Temperature Waveforms: T W Clicking the "Print" button allows you to print the display. Clicking the Save Image button allows you to save the screen (image) in a bmp-file. Filename : ****. bmp Clicking the Data Export button allows you to save the numeric data in a csv-file. Filename: ****. csv Close this Window by clicking on the Back Button. The Cycle Mode window will be shown afterwards MT5F36567 Fuji Electric Co., Ltd. All rights reserved 24
25 Circuit Topology, PWM Method MT5F36567 Fuji Electric Co., Ltd. All rights reserved 25
26 Circuits & Modulation Methods List of the available circuit configurations and the available PWM control systems in the simulator software. Circuit 3-Phase 2-Level Inverter PWM Modulation Method Sinusoidal Modulation Space Vector Modulation 3 rd Harmonic Injection DPWM two-phase modulation ( A) DPWMMIN two-phase modulation ( B) DC lock DC Chopper Boost Chopper Buck Chopper MT5F36567 Fuji Electric Co., Ltd. All rights reserved 26
27 Circuit Topology 3-Phase 2-Level Inverter Buck Chopper DC Chopper Boost Chopper If all devices are mounted on a single heat sink If all devices are mounted on a single heat sink If all devices are mounted on a single heat sink MT5F36567 Fuji Electric Co., Ltd. All rights reserved 27
28 PWM Method (SPWM, SVPWM) V CC Sinusoidal PWM V CC Space Vector PWM V ref V ref The reference voltage is a sinusoidal waveform. The amplitude of the reference voltage V ref is defined by the following equation using modulation ratio m. V ref = m * V CC The maximum value of m is. The amplitude of the reference voltage V ref is defined by the following equation using modulation ratio m. V ref = 3/2 * m * V CC m is defined to be the same output voltage to the sinusoidal PWM. The maximum m is 2/ 3 ( =.547). MT5F36567 Fuji Electric Co., Ltd. All rights reserved 28
29 PWM Method (3 rd harmonic injection) V CC 3 rd Harmonic Injection V ref The amplitude of the reference voltage V ref is defined by the following equation using modulation ratio m. V ref = 3/2 * m * V CC m is defined to be the same output voltage to the sinusoidal PWM. The maximum value of m is 2/ 3 =.547 MT5F36567 Fuji Electric Co., Ltd. All rights reserved 29
30 2-Phase Modulation 2-Phase (A) DPWM 2-Phase (B) - DPWMMIN V CC V CC V ref V ref The amplitude of the reference voltage V ref is defined by the following equation using modulation ratio m. V ref = 3/2 * m * V CC m is defined to be the same output voltage to the sinusoidal PWM. The maximum value of m is 2/ 3 =.547 The amplitude of the reference voltage V ref is defined by the following equation using modulation ratio m. V ref = 3/2 * m * V CC m is defined to be the same output voltage to the sinusoidal PWM. The maximum value of m is 2/ 3 =.547 MT5F36567 Fuji Electric Co., Ltd. All rights reserved 30
31 Motor Lock Calculate the loss of IGBT/FWD for the case that the motorshaft of a servo drive is locked. As shown in the diagram below, one IGBT of the upper (or lower) arm is switched on as well as the two lower (upper) IGBT s of the other phases. I o I o /2 I o /2 The current route of IGBT - on The current route of IGBT off MT5F36567 Fuji Electric Co., Ltd. All rights reserved 3
32 Further Information If you have any questions about this software, please contact your local Fuji Office or the Fuji Electric Co., Ltd. For details about our products please also check below link. MT5F36567 Fuji Electric Co., Ltd. All rights reserved 32
Melcosim IGBT Loss Simulator
Application NOTES: First Release May 17, 2005 Melcosim IGBT Loss Simulator Software Disclaimer Powerex assumes no responsibility for the use of this software and makes no guarantees, expressed or implied,
More informationTc=25 C 1800 Tc=100 C 1400 Collector current
2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for
More informationFUJI IGBT Module EP3 Package Evaluation Board
FUJI IGBT Module EP3 Package Evaluation Board December, 2017 Device Application Technology Dept. Sales Div., Electronic Devices Business Gr. Fuji Electric Co., Ltd. MT5F34605 Rev. a Fuji Electric Co.,
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous
1MBI2U4H-12L-5 IGBT MODULE (U series) 12V / 2A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive
More information4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
IGBT Power Module ( series) 12/45A/IGBT, ±/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure Applications
More informationTc=25 C 1800 Tc=100 C 1400 Collector current
2MBI4VXB-2P-5 IGBT MODULE (V series) 2V / 4A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
More informationC Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
More information4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
4MBI9B12R15 IGBT Power Module ( series) 12/9A/IGBT, ±9/9A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure
More information4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.
4MBI65B12R15 IGBT Power Module ( series) 12/65A/IGBT, ±9/65A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module
More informationC Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
More informationTc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
More informationFUJI IGBT Module EP2 Package Evaluation Board
FUJI IGBT Module EP2 Package Evaluation Board December, 2017 Device Application Technology Dept. Sales Div., Electronic Devices Business Gr. Fuji Electric Co., Ltd. MT6M13583 Rev. a Fuji Electric Co.,
More informationFGH75T65SQDNL4. 75 A, 650 V V CEsat = 1.50 V E on = 1.25 mj
IGBT - Field Stop IV/ Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching
More informationIPM Motor Drive Simulator User Manual
AN 2017-16 IPM Motor Drive Simulator User Manual About this document Scope and purpose To provide guidance for the IPM Motor Drive Simulator Tool Intended audience Any user that needs help with IPM Motor
More information2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules
Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding
More informationItem Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC.
YG865C08R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM -
More information4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)
4MBI4F12R5 IGBT Power Module ( series) 12/4A/IGBT, ±6/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit Low inductance module structure Applications Inverter for motor
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V
IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVB125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
More informationChapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450
IGBT MODULE (V series) V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200
1MBI36VD-12P IGBT MODULE (V series) 36V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
More informationNGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V
NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
More informationViso AC : 1min VAC
MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
More informationContinuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5
6MBI45V25 IGBT MODULE (V series) 2V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier
More informationNXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G. Q0PACK Module
NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G QPACK Module The NXH8T2L2QS2/P2G is a power module containing a T type neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400
1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationIntroduction to Simulation of Verilog Designs Using ModelSim Graphical Waveform Editor. 1 Introduction. For Quartus II 13.1
Introduction to Simulation of Verilog Designs Using ModelSim Graphical Waveform Editor For Quartus II 13.1 1 Introduction This tutorial provides an introduction to simulation of logic circuits using the
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
More informationCIPOS IPM Motor Drive Simulator User Manual
AN 2017-16 CIPOS IPM Motor Drive Simulator User Manual About this document Scope and purpose To provide guidance for the CIPOS IPM Motor Drive Simulator Tool Intended audience Any user that needs help
More informationLow Voltage Brushed Motor System
Low Voltage Brushed Motor System Tests performed: 1. RPM vs Output Voltages 2. Thermal Imaging 3. Output Voltage, Output Current, and Direction Voltage for100% duty Cycle a. Forward Direction b. Reverse
More informationCIC ENGINEERING 345 CENTER STREET EAST PEORIA, IL PH FAX µmpis Control Software
µmpis Control Software Overview The µmpis Control software package allows for a user to control the operation of the umpis unit with a PC. The PC and the umpis unit are connected together using a RS232
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
More informationModel-Based Design Toolbox
Model-Based Design Toolbox License Installation & Management Manual An Embedded Target for S32K1xx Family of Processors Version 3.0.0 Target Based Automatic Code Generation Tools For MATLAB /Simulink /Stateflow
More informationRURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V
RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General
More informationNXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier
NXH8B1HQSG Dual Boost Power Module 1 V, 4 A IGBT with SiC Rectifier The NXH8B1HQSG is a power module containing a dual boost stage consisting of two 4 A / 1 V IGBTs, two 15 A / 1 V silicon carbide diodes,
More information650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
More informationBUT12AX. 1. Product profile. 2. Pinning information. Silicon diffused power transistor. 1.1 Description. 1.2 Features. 1.
M3D38 Rev. 6 June 24 Product data. Product profile. Description High voltage, high speed, NPN power transistor in a plastic package..2 Features Isolated package Fast switching..3 Applications Inverters
More informationUltra Fast NPT - IGBT
APT8GR12JD 12V, 8A, V ce(on) = 2.V Typical Features Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and
More informationHow to Read a SEMIKRON 3-Level Datasheet
Application ote A 15-002 Revision: 00 Issue date: 2015-12-03 Prepared by: Ingo Rabl Approved by: Ulrich icolai Keyword: MLI, TMLI, PC, TPC, power losses, stray inductance How to Read a SEMIKRO 3-Level
More informationIGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
MBI3VG-R-5 IGBT MODULE (V series) V / 3A / IGBT, V/3A/RB-IGBT, in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module sucture Featuring Reverse Blocking IGBT
More informationAND9100/D. Paralleling of IGBTs APPLICATION NOTE. Isothermal point
Paralleling of IGBTs Introduction High power systems require the paralleling of IGBTs to handle loads well into the 10 s and sometimes the 100 s of kilowatts. Paralleled devices can be discrete packaged
More informationIGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package
MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
More informationPIN CONNECTIONS
The NCP4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over dissipation they cannot be
More informationNSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
More informationBUJ302AD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
28 April 208 Product data sheet. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits
More informationMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A
Molding Type Module IGBT, Chopper in 1 Package, 12 V and 3 A VS-GB3NH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK
More information40 V, 0.75 A medium power Schottky barrier rectifier
2 May 216 Product data sheet 1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted
More informationIcp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter
More informationCollector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationFFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description.
FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationIc Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W
7MBR35VP15 IGBT MODULE (V series) 1V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
More informationDesigning A SEPIC Converter
Designing A SEPIC Converter Introduction In a SEPIC (Single Ended Primary Inductance Converter) design, the output voltage can be higher or lower than the input voltage. The SEPIC converter shown in Figure
More informationIcp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
More informationIGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package
MBIVN-- IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
More informationSPS1M-EVK. SPS1M-EVK Battery Free Wireless Sensor Handheld Evaluation System EVAL BOARD USER S MANUAL
SPS1M-EVK SPS1M-EVK Battery Free Wireless Sensor Handheld Evaluation System EVAL BOARD USER S MANUAL Introduction This guide describes how to use the Handheld Evaluation System to carry out sensor measurements
More informationVCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
More informationFGH40N60SFDTU-F V, 40 A Field Stop IGBT
FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
More informationAPT2X21DC60J APT2X20DC60J
APT2X21DC6J ISOTOP SiC Diode Power Module V RRM = 6V I F = 2A @ T C = 1 C 2 Application 2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers 1 Features Anti-Parallel
More informationOracle Real-Time Scheduler
Oracle Real-Time Scheduler Map Editor Installation Guide Release 2.2.0 Service Pack 3 for Windows E60114-02 May 2015 Map Editor Installation Guide for Oracle Real-Time Scheduler Release 2.2.0 Service Pack
More informationIcp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20
7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationIcp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
More informationNXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT
NXH6TLQFSG Split T-Type NPC Power Module V, 6 A IGBT, 6 V, A IGBT The NXH6TLQFSG is a power module containing a split T type neutral point clamped three level inverter, consisting of two 6 A / V Half Bridge
More informationMMT05B350T3G. Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
More informationLA5774. Overview The LA5774 is a Separately-excited step-down switching regulator (variable type).
Ordering number : ENA0742 Monolithic Linear IC Separately-excited Step-down Switching Regulator (Variable Type) http://onsemi.com Overview The is a Separately-excited step-down switching regulator (variable
More informationMMT05B230T3, MMT05B260T3, MMT05B310T3. Thyristor Surge Protectors. High Voltage Bidirectional TSPD ( )
,, Preferred Devices Thyristor Surge Protectors High oltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and
More informationDead-Time Compensation Method for Vector-Controlled VSI Drives Based on Qorivva Family
Freescale Semiconductor Document Number: AN4863 Application Note Rev 0, June Dead-Time Compensation Method for Vector-Controlled VSI Drives Based on Qorivva Family by: Petr Konvicny 1 Introduction One
More informationTRBOnet Enterprise. Quick Reference Guide. Version 5.2. Internet. US Office Neocom Software Jog Road, Suite 202 Delray Beach, FL 33446, USA
TRBOnet Enterprise Quick Reference Guide Version 5.2 World HQ Neocom Software 8th Line 29, Vasilyevsky Island St. Petersburg, 199004, Russia US Office Neocom Software 15200 Jog Road, Suite 202 Delray Beach,
More information6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules
MBPFN5 IGBT Module ( series) / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability
More information6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules
MBP75FN5 IGBT Module ( series) / 75A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high
More informationAND8291/D. >85% Efficient 12 to 5 VDC Buck Converter
>5% Efficient to 5 VDC Buck Converter Prepared by: DENNIS SOLLEY ON Semiconductor General Description This application note describes how the NCP363 can be configured as a buck controller to drive an external
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T mb 129 C; Fig A
23 July 218 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT44 (D2PAK) surface mountable plastic package intended for use in applications requiring very
More informationPage 1/10 Digilent Analog Discovery (DAD) Tutorial 6-Aug-15. Figure 2: DAD pin configuration
Page 1/10 Digilent Analog Discovery (DAD) Tutorial 6-Aug-15 INTRODUCTION The Diligent Analog Discovery (DAD) allows you to design and test both analog and digital circuits. It can produce, measure and
More informationAimetis Outdoor Object Tracker. 2.0 User Guide
Aimetis Outdoor Object Tracker 0 User Guide Contents Contents Introduction...3 Installation... 4 Requirements... 4 Install Outdoor Object Tracker...4 Open Outdoor Object Tracker... 4 Add a license... 5...
More informationBUJ100LR. 1. General description. 2. Features and benefits. 3. Applications. 4. Pinning information. 5. Ordering information
3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching
More informationBT G0T. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 4Q Triac
Rev.01-11 July 2018 1. General description 2. Features and benefits 3. Applications 4. Quick reference data Table 1. Quick reference data Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic
More informationMUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationUltra Fast NPT - IGBT
APTGRBD APTGRB_SD APTGRSD V, A, V ce(on) =.V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T lead 83 C; Fig A
2 August 28 Product data sheet. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This is designed to be interfaced directly to
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
7 November 207 Product data sheet. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated
More informationSL MHz Wideband AGC Amplifier SL6140. Features
400MHz Wideband AGC Amplifier DS19 Issue no.0 July 1999 Features 400MHz Bandwidth (R L =0Ω) High voltage Gain 4 (R L =1kΩ) 70 Gain Control Range High Output Level at Low Gain Surface Mount Plastic Package
More informationFGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
More informationLV8716QAGEVK Evaluation Kit User Guide
LV8716QAGEVK Evaluation Kit User Guide NOTICE TO CUSTOMERS The LV8716QA Evaluation Kit is intended to be used for ENGINEERING DEVELOPMENT, DEMONSTRATION OR EVALUATION PURPOSES ONLY and is not considered
More informationImplementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064
Freescale Semiconductor Application Note AN3052 Rev. 0, 11/2005 Implementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064 by: Pavel Grasblum Freescale
More informationRHRP A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013
RHRP2 Data Sheet November 23 A, 2 V, Hyperfast Diode Features Hyperfast Recovery = 7 ns (@ I F = A) The RHRP2 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast
More informationPMEG100V060ELPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
2 May 26 Product data sheet. General description Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP5 (SOT289) power and flat lead Surface-Mounted Device (SMD)
More informationIntroduction to Simulation of Verilog Designs. 1 Introduction
Introduction to Simulation of Verilog Designs 1 Introduction An effective way of determining the correctness of a logic circuit is to simulate its behavior. This tutorial provides an introduction to such
More informationPMEG100V080ELPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
4 October 26 Product data sheet. General description Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP5 (SOT289) power and flat lead Surface-Mounted Device
More informationPMEG030V030EPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
26 July 206 Product data sheet. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in
More informationSTK E. Overview. Applications. Features. Thick-Film Hybrid IC 3-Phase Stepping Motor Driver
Ordering number : ENA1137B STK673-11-E Thick-Film Hybrid IC 3-Phase Stepping Motor Driver http://onsemi.com Overview The STK673-11-E is a 3-phase stepping motor driver hybrid IC with built-in microstep
More informationMolding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationNote: The product(s) described herein should not be used for any other application.
Discrete IGBTs Silicon N-Channel IGBT GT40QR21 GT40QR21 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other
More informationPMEG2005EGW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
5 December 206 Product data sheet. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationMJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationANDNGTB05N60R2DT4G/D. RC-IGBT Application Note. For Refrigerator compressor, fan motor. 1. At the beginning
NGTB05N60R2DT4G RC-IGBT Application Note For Refrigerator compressor, fan motor 1. At the beginning RC-IGBT is the abbreviation of Reverse Conducting Insulated Gate Bipolar Transistor, which is an IGBT
More information