S2D420N65R,S2U420N65R

Transcription

1 General Description S2X420N65R provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. Features Low RDS(ON) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Moisture Sensitivity Level 1 per J-STD-020 Qualified according to AEC-Q1 RoHS Compliant VDS,Tj(max)=700V R DS(ON) 420mΩ@VGS=V ID,pulse= 31.5A D:Drain G:Gate S:Source S2D420N65R S2U420N65R Application Lighting Hard switching PWM Server power supply Charger TO-252 TO-251 Absolute Maximum Ratings (TA=25 C Unless Otherwise Noted) PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current 1 Tc=25 C ID.5 Tc=0 C 6.5 Pulsed Drain Current 2 IDM 31.5 A Power Dissipation 3 Tc=25 C PD 83 W Single pulsed avalanche energy 5 EAS 272 mj MOSFET dv/dt ruggeness,vds=0 480V dv/dt 50 Reverse diode dv/dt, V DS=0 480 V, I SD I D dv/dt 15 Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 C Thermal Characteristics PARAMETER SYMBOL TYP UNIT Thermal Resistance Junction-to-Case R thjc 1.5 Thermal Resistance Junction-to-Ambient 4 R thja 62 A V/nS C /W Rev.3, Jul. 2017, KTLA06 1

2 Electrical Characteristics (TA =25 C Unless Otherwise Specified) PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage VGS=0V,ID=250uA V(BR)DSS VGS=0V,ID=250uA,Tj=150 C V Gate Threshold Voltage VDS=VGS,ID=250uA VGS(th) V Gate-Source Leakage VDS=0V, VGS=±30V IGSS ±0 na Zero Gate Voltage Drain Current VDS=650V,VGS=0V IDSS ua Drain-Source On-Resistance DYNAMIC Total Gate Charge VGS=V,ID=5A RDS(ON) VGS=V,ID=5A, TJ=150 C Qg Ω Gate-Source Charge VGS=V,VDS=520V, Qgs Gate-Drain Charge ID=.5A Qgd nc Gate plateau voltage Vplateau V Input Capacitance Ciss Output Capacitance VGS=0V,VDS=50V, F=1MHz Coss Reverse Transfer Capacitance Crss pf Turn-On Delay Time td(on) Turn-On Rise Time VGS = V, VDS = 520V, tr Turn-Off Delay Time RG = 25Ω, ID=.5A td(off) ns Turn-Off Fall Time tf Source-Drain Diode Diode forward current IS VGS<Vth Pulsed source current ISP A Diode forward voltage IS=.5A, VGS=0 V VSD V Reverse recovery time trr ns Reverse recovery charge VR=400 V, IS=.5A, di/dt=0 A/µs Qrr uc Peak reverse recovery current Irrm A Notes: (1). Calculated continuous current based on maximum allowable junction temperature. (2). Repetitive rating; pulse width limited by max. junction temperature. (3). Pd is based on max. junction temperature, using junction-case thermal resistance. (4). The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25 C. (5). V DD=50 V, R G=25 Ω, L=.8 mh, starting T j=25 C. (6). LiteON Semiconductor reserves the right to improve product design, functions and reliability without notice. Rev.3, Jul. 2017, KTLA06 2

3 16 14 Figure 1, Typ. output characteristics 8 V Figure 2, Typ. transfer characteristics V DS =20 V I D, Drain-source current (A) V 6 V 7 V V GS = 5 V I D, Drain current(a) V DS, Drain-source voltage (V) Figure 3, Typ. Capacitances V GS, Gate-source voltage(v) Figure 4, Typ. gate charge C, Capacitance (pf) 00 0 C iss C oss V GS,Gate-source voltage(v) C rss V DS, D rain-source voltage (V) Q g,gate charge(nc) 800 Figure 5, Drain-source breakdown voltage 1.0 Figure 6, Drain-source on-state resistance BV DSS, Drain-source voltage ( V ) R DS(on), On-resistance(Ω) T j, Juntion temperature ( ) T j, Juntion tem perature ( ) Rev.3, Jul. 2017, KTLA06 3

4 Figure 7, Forward characteristic of body diode 0.42 Figure 8, Drain-source on-state resistance 0.41 Is, Source current(a) R DS(ON),On-Resistance(Ω) V GS =V V GS =7V V SD, Source-drain voltage(v) Figure 9, Drain current I D,Drain Current(A) Figure, Safe operation area (TC=25 ) 1 0 I D, Drain-source current (A) I D, Drain current(a) R DS(ON) Limited us 0µs 1ms ms DC T C, C a s e te m p e ra tu re ( ) V DS, Drain-source voltage(v) Rev.3, Jul. 2017, KTLA06 4

5 Test circuit and waveforms Figure 1, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Rev.3, Jul. 2017, KTLA06 5

6 Package Outline Dimension TO-252 TO-252 DIM MIN TYP MAX A A A b C C D D REF E E e REF H L L REF L BSC L L L Θ Θ Θ All dimension in millimeter TO-252 (Q type) TO-252 (Q type) DIM MIN TYP MAX A A A b b c D D E E e H L L REF L BSC L L L REF Θ Θ Θ All dimension in millimeter Rev.3, Jul. 2017, KTLA06 6

7 TO-251(Q type) TO-251 (Q type) DIM MIN TYP MAX A A b b c D D E E e e H L L L Θ Θ All dimension in millimeter Rev.3, Jul. 2017, KTLA06 7

8 Marking information Logo Marking LT YMWW S2D420N65R Date code M-Assembly Code Logo Marking LT YMWW S2U420N65R Date code M-Assembly Code Rev.3, Jul. 2017, KTLA06 8

9 Packaging Information DEVICE Units / Tape Tapes / Inner size (mm) Units / Inner Inner / Carton Carton size (mm) Units / Carton TO-252 3K 1 338X338X26 3K 385X365X315 30K TO-252 (Q type) 2.5K 2 362X347X51 5K 5 381X364X360 25K DEVICE Units / Tube TO-251 (Q type) Tubes / Inner size (mm) Units / Inner Inner / Carton Carton size (mm) Units / Carton X180X75 9K 4 585X342X203 36K Embossed Carrier Dimensions Information Rev.3, Jul. 2017, KTLA06 9

10 TO-252 TAPE SIZE B1(MAX) D1(MIN) F K(MAX) P2 W UNIT ± ± ± mm P D E PO t(max) A0B0K0 mm /- 8.0± ±0. 4.0± Note Note 1: A0B0K0 are determined by component size. The clearance between the component and the cavity must be within 0.05 min. to 0.50 max. for 8 mm tape min. to 0.65 max. for 12mm tape min. to 0.90 max. for 16mm tape and 0.05 min. to 1.00 max. for 24 mm tape and larger. TO-252(Q type) TAPE SIZE B1 D1 F B0 W A0 t2 t4 UNIT 6.9±0.01 Ø / ± ± mm P D E P0 P2 t1 t3 t5 mm 8.00 Ø / Rev.3, Jul. 2017, KTLA06

11 Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC Rev.3, Jul. 2017, KTLA06 11