High Quality Audio, J-FET Input, Dual Operational Amplifier

Transcription

1 MUSES High Quality Audio, J-FET Input, Dual Operational Amplifier The MUSES is a dual J-FET input high quality audio operational amplifier, which is optimized for high-end audio and professional audio applications with advanced circuitry and layout, unique material and assembled technology by skilled-craftwork. It is the best for audio preamplifiers, active filters, and line amplifiers with excellent sound. FEATURES Operating Voltage Vopr= to ±V Output noise 9.nV/ Hz at f=khz Input Offset Voltage.mV typ. mv max. Input Bias Current pa typ. pa max. at Ta= C Voltage Gain db typ. Slew Rate V/μs typ. Bipolar Technology Package Outline DIP PIN CONFIGURATION PACKAGE OUTLINE PIN FUNCTION A OUTPUT. A -INPUT. A +INPUT. V-. B +INPUT. B -INPUT 7. B OUTPUT.V+ MUSESD MUSES and this logo are trademarks of New Japan Radio Co., Ltd. Ver

2 MUSES ABSOLUTE MAXIMUM RATINGS (Ta= C) PARAMETER SYMBOL RATING UNIT Supply Voltage V + /V - ± V Common Mode Input Voltage V ICM ± (Note) V Differential Input Voltage V ID ± V Power Dissipation P D 9 mw Output Current I O ± ma Operating Temperature Range T opr - to + C Storage Temperature Range T stg - to + C (Note) For supply Voltages less than ± V, the maximum input voltage is equal to the Supply Voltage. RECOMMENDED OPERATING CONDITION (Ta= C) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Supply Voltage V + /V - - ±9 - ± V ELECTRIC CHARACTERISTICS DC CHARACTERISTICS (V + /V - =±V, Ta= C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Operating Current I cc No Signal, R L = -.. ma Input Offset Voltage V IO Rs kω (Note, ) -.. mv Input Bias Current I B (Note, ) - pa Input Offset Current I IO (Note, ) - pa Voltage Gain A V R L kω, V o =±V 9 - db Common Mode Rejection Ratio CMR V ICM =±V (Note) 7 - db Supply Voltage Rejection Ratio SVR V + /V - =±9. to ±.V (Note, ) 7 - db Max Output Voltage V OM R L =kω ± ±. - V Max Output Voltage V OM R L =kω ± ±. - V Input Common Mode Voltage Range V ICM CMR db ± ±9. - V (Note) Measured at VICM=V (Note) Written by the absolute rate. (Note) CMR is calculated by specified change in offset voltage. (VICM=V to +V and VICM=V to V) (Note) SVR is calculated by specified change in offset voltage. (V+/V = to ±V) - - Ver.9--

3 MUSES AC CHARACTERISTICS (V + /V - =±V, Ta= C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gain Bandwidth Product GB f=khz -. - MHz Unity Gain Frequency f T A V =+, R S =Ω, R L =kω, C L =pf -. - MHz Phase Margin φ M A V =+, R S =Ω, R L =kω,c L =pf - - deg Input Noise Voltage V NI f=khz, A V =+, R S =Ω nv/ Hz Input Noise Voltage V N RIAA, R S =.kω, khz LPF -.. μvrms Total Harmonic Distortion THD f=khz, A V =+, R L =kω, Vo=Vrms -. - % Channel Separation CS f=khz, A V =-+, R S =kω, R L =kω - - db Positive Slew Rate +SR A V =, V IN =V p-p, R L =kω, C L =pf - - V/μs Negative Slew Rate -SR A V =, V IN =V p-p, R L =kω, C L =pf - - V/μs Ver

4 MUSES Application Notes Package Power, Power Dissipation and Output Power IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power Dissipation P D. The dependence of the MUSES P D on ambient temperature is shown in Fig. The plots are depended on following two points. The first is P D on ambient temperature C, which is the maximum power dissipation. The second is W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage temperature Tstg derives this point. Fig. is drawn by connecting those points and conforming the P D lower than C to it on C. The P D is shown following formula as a function of the ambient temperature between those points. Dissipation Power P D = Tjmax - Ta θja [W] (Ta= C to Ta= C) Where, θja is heat thermal resistance which depends on parameters such as package material, frame material and so on. Therefore, P D is different in each package. While, the actual measurement of dissipation power on MUSES is obtained using following equation. (Actual Dissipation Power) = (Supply Voltage V DD ) X (Supply Current I DD ) (Output Power Po) The MUSES should be operated in lower than P D of the actual dissipation power. To sustain the steady state operation, take account of the Dissipation Power and thermal design. P D [mw] 9 DIP - (Topr max.) (Tstg max.) Ta [deg] Fig. Power Dissipations vs. Ambient Temperature on the MUSES - - Ver.9--

5 MUSES TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT AMPLITUDE(FREQUENCY) V + /V - =±V,A V =+, R g=kohm,r f=9.kohm, R L =kohm,ta= T O T A L H A R M O N IC D IS T O R T IO N + N O IS E vs OUTPUT AMPLITUDE(FREQUENCY) V + /V - =±V,A V =+, R g=kohm,r f=9.kohm, R L =kohm,ta= THD+Nois e [% ].. f=kh z kh z THD+Noise [% ].. f=kh z kh z. H z. H z H z H z.... O utput Am plitu d e [V rm s].. O utput Am plitu d e [V rm s] T O T A L H A R M O N IC D IS T O R T IO N + N O IS E vs OUTPUT AMPLITUDE(FREQUENCY) EQUIVALENT INPUT NOISE DENSITY vs FREQ UENCY V + /V - =,A V =+, R g=kohm,r f=9.kohm, R L =kohm,ta= V + /V - =±V,A V =+,R s=ohm,r L =,Ta= 7 THD+Noise [% ]... kh z f=kh z H z H z Noise D ensity [n V / Hz]... O u tp u t A m p litu d e [V rm s ],, Frequency [H z] EQUIVALENT INPUT NOISE DENSITY vs FREQ UENCY EQUIVALENT INPUT NOISE DENSITY vs FREQUENCY V + /V - =±V,A V =+,R s=ohm,r L =,Ta= V + /V - =,A V =+,R s=ohm,r L =,Ta= 7 7 Noise D ensity [n V / Hz] Noise D ensity [n V / Hz],,,, Frequency [H z] Frequency [H z] Ver

6 MUSES CHANNEL SEPARATION vs FREQUENCY CHANNEL SEPARATION vs FREQUENCY - V + /V - =±V,A V =-, R S =kohm, R L = ko h m, V o = V rm s, T a = - V + /V - =±V,A V =-, R S =kohm, R L = ko h m, V o = V rm s, T a = - - C hannelseparation [db] C hannelseparatio n [d B ] Frequency [H z] Frequency [H z] CHANNEL SEPARATION vs FREQUENCY CLOSED-LOOP GAIN/PHASE vs FREQUENCY (TEM PERATURE) - V + /V - =,A V =-, R S = ko h m, R L = ko h m, V o = V rm s, T a = V + /V - =±V, A V =+, R S =ohm, R T =ohm,r L =kohm,c L =pf V IN =-dbm,vicm =V C hannelseparation [db] Volta g e G a in [d B ] - Gain Phase Ta= - - Phase Shift [d e g ] Frequency [H z] - Frequency [kh z] - CLOSED-LOOP GAIN/PHASE vs FREQUENCY (TEMPERATURE) C L O S E D L O O P G A IN /P H A S E vs FREQUENCY (TEMPERATURE) V + /V - =±V, A V =+, R S =ohm, R T =ohm,r L =kohm,c L =pf V IN =-dbm,vicm =V V + /V - =, A V =+, R S =ohm, R T =ohm, R L =kohm,c L =pf V IN =-dbm,vicm =V Gain Ta= - Gain Ta= - Volta g e G a in [d B ] - Phase - Phase Shift [d e g ] Voltage G ain [db] - Phase - Phase Shift [d e g ] Frequency [kh z] Frequency [kh z] - - Ver.9--

7 MUSES TRANSIENT RESPONSE (TEM PERATURE) V + /V - =±V,V IN =V P-P,f=kH z PulseE dge=nsec,g v=db,c L =pf,r L =kohm Input V oltage SLEW RATE vs TEM PERATURE V + /V - =±V,V IN =V P-P,f=kH z PulseEdge=nsec,G v=db,c L =pf,r L =kohm Fall O utput Volta g e [V ] - Ta= In p u t V o ltage [V] Sle w R a te [V /μsec] Rise - O utput V oltage Time [μsec] TRANSIENT RESPONSE (TEM PERATURE) V + /V - =±V,V IN =V P-P,f=kH z PulseEdge=nsec,G v=db,c L =pf,r L =kohm Input V oltage SLEW RATE vs TEM PERATURE V + /V - =±V,V IN =V P-P,f=kH z PulseEdge=nsec,G v=db,c L =pf,r L =kohm Fall O u tp u t V o ltage [V] Ta= In p u t V o lta g e [V ] Slew R ate [V/μsec] Rise O utput V oltage Time [μsec] O u tp u t V o lta g e [V ] TRANSIENT RESPONSE (TEM PERATURE) V + /V - =,V IN =V P-P,f= kh z PulseEdge=nsec,G v=db,c L =pf,r L =kohm Input V oltage Ta= Input Voltage [V] Sle w R a te [V /μsec] SLEW RATE vs TEM PERATURE V + /V - =,V IN =V P-P,f=kH z PulseEdge=nsec,G v=db,c L =pf,r L =kohm Fall Rise - O utput Voltage Tim e [μsec] Ver

8 MUSES SUPPLY CURRENT vs SUPPLY VOLTAGE (TEMPERATURE) G V =db,vin=v SUPPLY CURRENT vs TEMPERATURE (SUPPLY VOLTAGE) G V =db,vin=v Ta= - ±V V + /V - =±V Supply Current [ma] Supply Current [ma] 9 Supply Voltage [V + /V - ] INPUT OFFSET VOLTAGE vs SUPPLY VOLTAGE (TEMPERATURE) V ICM =V,Vin=V POWER SUPPLY REJECTION RATIO vs TEMPERATURE V ICM =V,V+/V-= to ±V Input Offset Voltage [mv] - Ta= Supply Voltage [V + /V - ] Power Supply Rejection Ratio [db] ,, INPUT BIAS CURRENT vs TEMPERATURE (SUPPLY VOLTAGE) V ICM =V,, INPUT BIAS CURRENT vs INPUT COMMON-MODE VOLTAGE (TEMPERATURE) V + /V - =±V,, Input Bias Current [pa],, ±V V+/V-=±V Input Bias Current [pa],, Ta= Common-Mode Votage [V] - - Ver.9--

9 MUSES,, INPUT BIAS CURRENT vs INPUT COMMON-MODE VOLTAGE (TEMPERATURE) V + /V - =±V,, INPUT BIAS CURRENT vs INPUT COMMON-MODE VOLTAGE (TEMPERATURE) V + /V - =,, Input Bias Current [pa],, Ta= Input Bias Current [pa],, Ta= Common-Mode Voltage [V] Cmmon-Mode Voltage [V], INPUT OFFSET CURRENT vs TEMPERATURE (SUPPLY VOLTAGE) V ICM =V INPUT O FFSET VO LTAG E vs O UTPUT VO LTAG E (TEMPERATURE) V + /V - =±V,R L = ko h m to V Input Offset Current [pa], ±V V+/V-=±V In p u t O ffse t V o latage [m V] Ta= O utput Volta g e [V ] O pen-loop V olta g e G a in [db] 9 7 OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE R L =kohm to V,V + /V - =±V,V o=-v to +V O pen-loop Voltage G ain [d B ] 9 7 OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE R L = ko h m to V,V + /V - =±V,Vo=-V to +V Ver

10 MUSES O pen-loop Volatage G ain [db] OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE R L = ko h m to V,V + /V - =,Vo=-V to +V Common-Mode Rejection Ratio [db] COMMON-MODE REJECTION RATIO vs TEMPERATUER (INPUT COMMON-MODE VOLTAGE) V + /V - =±V Vicm=V to -9V V to +9V COMMON-MODE REJECTION RATIO vs TEMPERATURE (INPUT COMMON-MODE VOLTAGE) V + /V - =±V COMMON-MODE REJECTION RATIO vs TEMPERATURE (INPUT COMMON-MODE VOLTAGE) V + /V - = V to +V Common-Mode Rejection Ratio [db] Vicm=V to -V V to +V Common-Mode Rejection Ratio [db] Vicm=V to -V MAXIMUM OUTPUT VOLTAGE vs LOAD RESISTANCE (TEM PERATURE) MAXIMUM OUTPUT VOLTAGE vs LOAD RESISTANCE (TEM PERATURE) V + /V - =±V,G v=open,r L to V V + /V - =±V,G v=open,r L to V Maximum Output Voltage [V] Maxim u m O u tp u t V o ta g e [ V ] Load R esistance [ohm ] Load R esistance [ohm ] - - Ver.9--

11 MUSES MAXIMUM OUTPUT VOLTAGE vs LOAD RESISTANCE (TEM PERATURE) V + /V - =,G v=open,r L to V MAXIMUM OUTPUT VOLTAGE vs TEM PERATURE (SUPPLY VOLTAGE) G v=open,r L = ko h m to V Maxim u m O u tp u t V o ltage [V ] Maximum Output Voltage [V] V+/V-=±V ±V Load R esistance [ohm ] MAXIMUM OUTPUT VOLTAGE vs TEM PERATURE (SUPPLY VOLTAGE) G v=open,r L =kohm to V GAIN BANDW IDTH PRODUCT vs TEMPERATURE (S U P P L Y V O L T A G E ) f= kh z,a V =db, R S =ohm, R T =ohm,r L = ko h m, C L =pf,v IN =-dbm Maximum Output Volta g e [V ] V+/V-=±V ±V Gain B andw idth Product [M H z] V+/V-=±V ±V UNITY GAIN FREQUENCY vs TEMPERATURE (SUPPLY VOLTAGE) A V =+, R S =ohm, R T =ohm,r L =kohm, C L =pf,v IN =-dbm 9 PHASE M ARGIN vs TEM PERATURE (SUPPLY VOLTAGE) A V =+, R S =ohm, R T =ohm,r L = ko h m, C L =pf,v IN =-dbm Unity G a in Frequency [M H z] V + /V - =±V ±V Phase M argin [deg] V + /V - =±V ±V Ver

12 MUSES MEMO [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - - Ver.9--