High Quality Audio, Bipolar Input, Dual Operational Amplifier

Transcription

1 MUSES High Quality Audio, Bipolar Input, Dual Operational Amplifier The MUSES is a dual bipolar input high quality audio operational amplifier, which is optimized for high-end audio and professional audio applications with advanced circuitry and layout, unique material and assembled technology by skilled-craftwork. It is the best for audio preamplifiers, active filters, and line amplifiers with excellent sound. FEATURES Operating Voltage Output noise Input Offset Voltage Input Bias Current Voltage Gain Slew Rate Bipolar Technology Package Outline Vopr =.V to V.nV/ Hz at f=khz.mv typ. mv max. na typ. na max. at Ta= C db typ. V/ s typ. DIP PIN CONFIGURATION PACKAGE OUTLINE PIN FUNCTION A OUTPUT. A -INPUT. A +INPUT. V-. B +INPUT. B -INPUT 7. B OUTPUT.V+ MUSES MUSES and this logo are trademarks of New Japan Radio Co., Ltd. Ver

2 MUSES ABSOLUTE MAXIMUM RATINGS (Ta= C) PARAMETER SYMBOL RATING UNIT Supply Voltage V + /V - V Common Mode Input Voltage V ICM (Note) V Differential Input Voltage V ID V Power Dissipation P D 9 mw Output Current I O ma Operating Temperature Range T opr - to + C Storage Temperature Range T stg - to + C (Note) For supply Voltages less than V, the maximum input voltage is equal to the Supply Voltage. RECOMMENDED OPERATING CONDITION (Ta= C) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Supply Voltage V + /V V ELECTRIC CHARACTERISTICS DC CHARACTERISTICS (V + /V - = V, Ta= C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Operating Current I cc No Signal, R L = -.. ma Input Offset Voltage V IO Rs k (Note) -.. mv Input Bias Current I B (Note, ) - na Input Offset Current I IO (Note, ) - na Voltage Gain A V R L kω, V o = V Rs k 9 - db Common Mode Rejection Ratio CMR V ICM = V (Note) Rs k - db Supply Voltage Rejection Ratio SVR V + /V - =. to.v Rs k (Note, ) - db Max Output Voltage V OM R L =kω. - V Input Common Mode Voltage Range V ICM CMR db. - V (Note) Measured at VICM=V (Note) Written by the absolute rate. (Note) CMR is calculated by specified change in offset voltage. (VICM=V to +V and VICM=V to V) (Note) SVR is calculated by specified change in offset voltage. (V+/V =±.V to ±V) - - Ver.--

3 MUSES AC CHARACTERISTICS (V + /V - = V, Ta= C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gain Bandwidth Product GB f=khz - - MHz Unity Gain Frequency f T A V =+, R S =Ω, R L =kω, C L =pf -. - MHz Phase Margin M A V =+, R S =Ω, R L =kω,c L =pf - - deg Input Noise Voltage V NI f=khz, A V =+, R S =Ω,R L = -. - nv/ Hz Input Noise Voltage V N f=khz, A V =+ R S =.kω, RIAA, khz LPF -.. Vrms Total Harmonic Distortion THD f=khz, A V =+, R L =kω, Vo=Vrms -. - % Channel Separation CS f=khz, A V =-+, R S =kω, R L =kω - - db Positive Slew Rate +SR A V =, V IN =V p-p, R L =kω, C L =pf - - V/ s Negative Slew Rate -SR A V =, V IN =V p-p, R L =kω, C L =pf - - V/ s Ver

4 MUSES Application Notes Package Power, Power Dissipation and Output Power IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power Dissipation P D. The dependence of the MUSES P D on ambient temperature is shown in Fig. The plots are depended on following two points. The first is P D on ambient temperature C, which is the maximum power dissipation. The second is W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage temperature Tstg derives this point. Fig. is drawn by connecting those points and conforming the P D lower than C to it on C. The P D is shown following formula as a function of the ambient temperature between those points. Dissipation Power P D = Tjmax - Ta ja [W] (Ta= C to Ta= C) Where, ja is heat thermal resistance which depends on parameters such as package material, frame material and so on. Therefore, P D is different in each package. While, the actual measurement of dissipation power on MUSES is obtained using following equation. (Actual Dissipation Power) = (Supply Voltage V DD ) X (Supply Current I DD ) (Output Power Po) The MUSES should be operated in lower than P D of the actual dissipation power. To sustain the steady state operation, take account of the Dissipation Power and thermal design. P D [mw] 9 DIP - (Topr max.) (Tstg max.) Ta [deg] Fig. Power Dissipations vs. Ambient Temperature on the MUSES - - Ver.--

5 MUSES TYPICAL CHARACTERISTICS Total Harmonic Distortion + Noise vs. Output Amplitude (Frequency) V + /V - =±V,Av=+, R G =k,r F =9.k, R L =k,ta=ºc Total Harmonic Distortion + Noise vs. Output Amplitude (Frequency) V + /V - =±V,Av=+, R G =k,r F =9.k, R L =k,ta=ºc THD+Noise [%].. khz THD+Noise [%].. khz. khz. khz Hz Hz... Output Amplitude [Vrms] Hz Hz... Output Amplitude [Vrms] Total Harmonic Distortion + Noise vs. Output Amplitude (Frequency) V + /V - =±.V,Av=+, R G =k,r F =9.k, R L =k,ta=ºc Equivalent Input Voltage Noise vs. Frequency V + /V - =±V,A V =+,R S =Ω,R L =,Ta=ºC THD+Noise [%]... khz khz Hz Hz Voltage Noise [nv/ Hz]... Output Amplitude [Vrms],, Frequency [Hz] Equivalent Input Voltage Noise vs. Frequency Equivalent Input Voltage Noise vs. Frequency V + /V - =±V,A V =+,R S =Ω,R L =,Ta=ºC V + /V - =±.V,A V =+,R S =Ω,R L =,Ta=ºC Voltage Noise [nv/ Hz] Voltage Noise [nv/ Hz],,,, Frequency [Hz] Frequency [Hz] Ver

6 MUSES Channel Separation vs. Frequency Channel Separation vs. Frequency V + /V - =±V,A V =-,R S =k,r L =k,vo=vrms, Ta=ºC V + /V - =±V,A V =-,R S =k,r L =k,vo=vrms, Ta=ºC Channel Separation[dB] Channel Separation[dB] k k k k k k Frequency[Hz] Frequency[Hz] - Channel Separation vs. Frequency V + /V - =±.V,A V =-,R S =k,r L =k,vo=vrms, Ta=ºC Closed-Loop Gain/Phase vs. Frequency(Temperature) V + /V - =±V, A V =+, R S =, R T =, R L =k,c L =p V IN =-dbm,vicm=v Gain Ta=ºC - -ºC Channel Separation[dB] Voltage Gain [db] - Phase -ºC - Phase Shift [deg] k k k Frequency[Hz] - - Frequency [khz] Closed-Loop Gain/Phase vs. Frequency(Temperature) V + /V - =±V, A V =+, R S =, R T =, R L =k,c L =p V IN =-dbm,vicm=v Gain Ta=ºC -ºC Closed-Loop Gain/Phase vs. Frequency(Temperature) V + /V - =±.V, A V =+, R S =, R T =, R L =k,c L =p V IN =-dbm,vicm=v Gain Ta=ºC -ºC Voltage Gain [db] - Phase -ºC - Phase Shift [deg] Voltage Gain [db] - Phase -ºC - Phase Shift [deg] Frequency [khz] - - Frequency [khz] - - Ver.--

7 MUSES Output Voltage [V] - - Transient Response (Temperature) V+/V-=±V,VIN=VP-P,f=kHz PulseEdge=nsec,Gv=dB,CL=p,RL=k Input Voltage - C Ta= C Output Voltage Time [μsec] Input Voltage[V] Slew Rate [V/μsec] Slew Rate vs. Temperature V + /V - =±V,V IN =V P-P,f=kHz PulseEdge=nsec,Gv=dB,C L =p,r L =k Rise Fall Transient Response (Temperature) V + /V - =±V,V IN =V P-P,f=kHz PulseEdge=nsec,Gv=dB,C L =p,r L =k Input Voltage Slew Rate vs. Temperature V + /V - =±V,V IN =V P-P,f=kHz PulseEdge=nsec,Gv=dB,C L =p,r L =k Fall Output Voltage [V] - C Ta= C Input Voltage[V] Slew Rate [V/μsec] Rise Output Voltage Time [μsec] Transient Response (Temperature) V + /V - =±.V,V IN =V P-P,f=kHz PulseEdge=nsec,Gv=dB,C L =p,r L =k Input Voltage Slew Rate vs. Temperature V + /V - =±.V,V IN =V P-P,f=kHz PulseEdge=nsec,Gv=dB,C L =p,r L =k Fall Output Voltage [V] - C Ta= C Input Voltage[V] Slew Rate [V/μsec] Rise Output Voltage Time [μsec] Ver

8 MUSES Supply Current vs Supply Voltage (Temperature) G V =db,vicm=v Supply Current vs. Temperature (Supply Voltage) G V =db,vicm=v Supply Current [ma] Ta= C - C Supply Current [ma] ±.V V + /V - =±V ±V Supply Voltage [V + /V - ] Input Offset Voltage vs. Supply Voltage (Temperature) V ICM =V,V IN =V Supply Voltage Rejection Ratio vs. Temperature V ICM =V, V + /V - =±.V to ±V Input Offset Voltage [mv] - - Ta= C - C Supply Voltage Rejection Ratio[dB] - Supply Voltage [V + /V - ] Input Bias Current vs. Temperature (Supply Voltage) Vicm=V Input Bias Current vs. Input Common-Mode Voltage (Temperature) V + /V - =±V Input Bias Current [na] ±V V + /V - =±V ±.V Input Bias Current [na] Ta= C - C Common-Mode Voltage [V] - - Ver.--

9 MUSES Input Bias Current vs. Input Common-Mode Voltage (Temperature) V + /V - =±V Input Bias Current vs. Input Common-Mode Voltage (Temperature) V + /V - =±.V Input Bias Current [na] Ta= C - C Input Bias Current [na] Ta= C - C Common-Mode Voltage [V] Common-Mode Voltage [V] Input Offset Current vs. Temperature (Supply Voltage) Vicm=V Input Offset Voltage vs. Output Voltage (Temperature) V + /V - =±V, R L =kω to V Input Offset Current [na] - - V + /V - =±V ±V ±.V Input Offset Voltage [mv] - - C Ta= C Output Voltage [V] Open-Loop Voltage Gain vs. Temperature R L =kω to V, V + /V - =±V, Vo=-V to +V Open-Loop Voltage Gain vs. Temperature R L =kω to V, V + /V - =±V, Vo=-V to +V Open-Loop Voltage Gain [db] 9 7 Open-Loop Voltage Gain [db] Ver

10 MUSES Open-Loop Voltage Gain vs. Temperature R L =kω to V, V + /V - =±.V, Vo=-V to +V Common-Mode Rejection Ratio vs. Temperature (Input Common-Mode Voltage) V + /V - =±V Open-Loop Voltage Gain [db] 9 7 Common-Mode Rejection Ratio [db] 9 7 Vicm=V to +V Vicm=-V to V Common-Mode Rejection Ratio vs. Temperature (Input Common-Mode Voltage) V + /V - =±V Common-Mode Rejection Ratio vs. Temperature (Input Common-Mode Voltage) V + /V - =±.V Common-Mode Rejection Ratio [db] 9 7 Vicm=V to +V Vicm=-V to V Common-Mode Rejection Ratio [db] 9 7 Vicm=V to +V Vicm=-V to V Maximum Output Voltage vs. Load Resistance (Temperature) V + /V - =±V, G V =open, R L to V Maximum Output Voltage vs. Load Resistance (Temperature) V + /V - =±V, G V =open, R L to V Maximum Output Voltage [V] C C Maximum Output Voltage [V] C C Load Resistance [Ω] - Load Resistance [Ω] - - Ver.--

11 MUSES Maximum Output Voltage vs. Load Resistance (Temperature) V + /V - =±.V, G V =open, R L to V Maximum Output Voltage vs. Temperature (Supply Voltage) G V =open,r L =k,r L to V Maximum Output Voltage[V] C C Maximum Output Voltage [V] - - ±.V ±V V+/V-=±V - - Load Resistance [Ω] Gain Bandwidth Product vs. Temperature R T =, f=khz, R L =k, C L =pf, Vin=-dBm Unity Gain Frequency vs. Temperature G V =+, R S =, R T =, R L =k,c L =pf,vin=-dbm 9 Gain Bandwidth Product [MHz] 9 V + /V - =±V G V =db, Rs= V + /V - =±.V G V =db, Rs= V + /V - =±V G V =db, Rs= Unity Gain Frequency [MHz] 7 V + /V - =±V ±.V ±V Temperature [ºC] Temperature [ºC] 9 Phase Margin vs. Temperature G V =+, R S =, R T =, R L =k, C L =pf, Vin=-dBm Phase Mergin [deg] V + /V - =±V ±V ±.V Temperature [ºC] Ver

12 MUSES MEMO [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - - Ver.--