TISP4xxxJ3BJ Overvoltage Protector Series

Transcription

1 *ohs COMPLIAN ISP4070J3BJ HU ISP4395J3BJ BIDIECIONAL HYISO OEOLAGE POECOS ISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown egion -Precise and Stable oltage -Low oltage Overshoot Under Surge Designed for ransformer Center ap (Ground eturn) Overvoltage Protection -Enables G-1089-COE Compliance -High Holding Current Allows Protection of Data Lines with d.c. Power Feed Can be Used to Protect ugged Modems Designed for Exposed Applications Exceeding IA-968-A Device Name DM (BO) ISP4070J3BJ ISP4080J3BJ ISP4095J3BJ ISP4115J3BJ ISP4125J3BJ ISP4145J3BJ ISP4165J3BJ ISP4180J3BJ ISP4200J3BJ ISP4219J3BJ ISP4250J3BJ ISP4290J3BJ ISP4350J3BJ ISP4395J3BJ SMB Package (op iew) Device Symbol 1 2 MD-SMB-004-a ated for International Surge Wave Shapes SD-ISP4xxx-001-a Wave Shape Standard A 2/10 G-1089-COE /20 IEC /160 IA-968-A /700 IU- K.20/21/ /560 IA-968-A /1000 G-1089-COE UL ecognized Component Description he range of ISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. he ISP4xxxJ3BJ is primarily designed to address G-1089-COE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. he high 150 ma holding current is set above common d.c. feed system levels to allow the ISP4xxxJ3BJ to reset following a disturbance. hese devices allow signal voltages, without clipping, up to the maximum off-state voltage value, DM, see Figure 1. oltages above DM are limited and will not exceed the breakover voltage, (BO), level. If sufficient current fl ows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, I H, level the devices switches off and restores normal system operation. How to Order Device Package Carrier Order As Marking Code Std. Qty. ISP4xxxJ3BJ SMB (DO-214AA) Embossed ape eeled ISP4xxxJ3BJ-S 4xxxJ Insert xxx value corresponding to device name. *ohs Directive 2002/95/EC Jan. 27, 2003 including annex and ohs ecast 2011/65/EU June 8, 2011.

2 Absolute Maximum atings, A = 25 C (Unless Otherwise Noted) epetitive peak off-state voltage ating Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 µs (G-1089-COE, 2/10 µs voltage wave shape) 8/20 µs (IEC , combination wave generator, 1.2/50 µsvoltage wave shape) 10/160 µs (IA-968-A, 10/160 µs voltage wave shape) 4/250 µs (IU- K.20/21, 10/700 µs voltage waveshape, simultaneous) 5/310 µs (IU- K.20/21, 10/700 µs voltage wave shape, single) 5/320 µs (IA-968-A, 9/720 µs voltage waveshape, single) 10/560 µs (IA-968-A, 10/560 µs voltage wave shape) 10/1000 µs (G-1089-COE, 10/1000 µs voltage wave shape) 4070J3BJ 4080J3BJ 4095J3BJ 4115J3BJ 4125J3BJ 4145J3BJ 4165J3BJ 4180J3BJ 4200J3BJ 4219J3BJ 4250J3BJ 4290J3BJ 4350J3BJ 4395J3BJ Symbol Non-repetitive peak on-state current (see Notes 1 and 2) 20 ms, 50 Hz (full sine wave) I SM 50 A Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 50 A di /dt 800 A/µs Junction temperature J -40 to +150 C Storage temperature range stg -65 to +150 C NOES: 1. Initially the device must be in thermal equilibrium with J = 25 C. 2. hese non-repetitive rated currents are peak values of either polarity. he surge may be repeated after the device returns to its initial conditions. DM alue ±58 ±65 ±75 ±90 ±100 ±120 ±135 ±145 ±155 ±180 ±190 ±220 ±275 ±320 ±1000 ±800 ±400 ±370 ±350 ±350 ±250 ±200 A Electrical Characteristics, A = 25 C (Unless Otherwise Noted) I DM Parameter epetitive peak off-state current est Conditions D = DM A = 25 C A = 85 C (BO) AC Breakover voltage dv/dt = ±250 /ms, SOUCE = 300 Ω 4070J3BJ 4080J3BJ 4095J3BJ 4115J3BJ 4125J3BJ 4145J3BJ 4165J3BJ 4180J3BJ 4200J3BJ 4219J3BJ 4250J3BJ 4290J3BJ 4350J3BJ 4395J3BJ Min yp Max ±5 ±10 ±70 ±80 ±95 ±115 ±125 ±145 ±165 ±180 ±200 ±219 ±250 ±290 ±350 ±395 µa

3 Electrical Characteristics, A = 25 C (Unless Otherwise Noted) (BO) amp breakover voltage dv/dt ±1000 /µs, Linear voltage ramp, Maximum ramp value = ±500 di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A 4070J3BJ 4080J3BJ 4095J3BJ 4115J3BJ 4125J3BJ 4145J3BJ 4165J3BJ 4180J3BJ 4200J3BJ 4219J3BJ 4250J3BJ 4290J3BJ 4350J3BJ 4395J3BJ 4070J3BJ thru 4115J3BJ ±900 I (BO) Breakover current dv/dt = ±250 /ms, SOUCE =300Ω 4125J3BJ thru 4219J3BJ ±800 ma 4250J3BJ thru 4395J3BJ ±600 I H Holding current I = ±5 A, di/dt = ±30 ma/ms ±150 ±600 ma dv/dt Critical rate of rise of Linear voltage ramp off-state voltage Maximum ramp value < 0.85 DM ±5 k/µs I D Off-state current D = ±50 A = 85 C ±10 µa 4070J3BJ thru 4115J3BJ C O Parameter Off-state capacitance f = 1 MHz, d = 1 rms, D = 0 f = 1 MHz, d = 1 rms, D = -1 f = 1 MHz, d = 1 rms, D = -2 f = 1 MHz, d = 1 rms, D = -50 est Conditions f = 1 MHz, d = 1 rms, D = -100 (see Note 3) NOE: 3. o avoid possible clipping, the ISP4125J3BJ is tested with D = -98. Min yp Max ±77 ±88 ±104 ±125 ±135 ±156 ±177 ±192 ±212 ±231 ±263 ±303 ±364 ± J3BJ thru 4219J3BJ J3BJ thru 4395J3BJ J3BJ thru 4115J3BJ J3BJ thru 4219J3BJ J3BJ thru 4395J3BJ J3BJ thru 4115J3BJ J3BJ thru 4219J3BJ J3BJ thru 4395J3BJ J3BJ thru 4115J3BJ J3BJ thru 4219J3BJ J3BJ thru 4395J3BJ J3BJ thru 4219J3BJ J3BJ thru 4395J3BJ pf hermal Characteristics Parameter est Conditions Min yp Max θja NOE: EIA/JESD51-3 PCB, I Junction to ambient thermal resistance = I SM(1000) 90 C/W (see Note 4) 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

4 Parameter Measurement Information +i I SM Quadrant I Switching Characteristic I M I (BO) I (BO) I H -v (B)M DM D I D I D D I DM DM I (B) (B) +v I (B) (B) I DM (B)M I H I (BO) (BO) I I M Quadrant III I SM Switching Characteristic Figure 1. oltage-current Characteristic for and erminals All Measurements are eferenced to the erminal -i PM-ISP4xxx-001-a

5 ypical Characteristics 100 OFF-SAE CUEN JUNCION EMPEAUE C4JAG 1.15 NOMALIZED BEAKOE OLAGE JUNCION EMPEAUE C4JAF D = ±50 I D - Off-State Current - µa Normalized Breakover oltage J - Junction emperature - C J - Junction emperature - C Figure 2. Figure 3. Normalized Holding Current NOMALIZED HOLDING CUEN JUNCION EMPEAUE C4JAD Capacitance Normalized to D = NOMALIZED CAPACIANCE OFF-SAE OLAGE J = 25 C d = 1 rms C4JABB J - Junction emperature - C D - Off-state oltage - Figure 4. Figure 5.

6 ating and hermal Characteristics NON-EPEIIE PEAK ON-SAE CUEN CUEN DUAION I SM(t) - Non-epetitive Peak On-State Current - A t - Current Duration - s Figure 6. I4JAA GEN = 600 rms, 50/60 Hz GEN = 1.4* GEN /I SM(t) EIA/JESD51-2 ENIONMEN EIA/JESD51-3 PCB A = 25 C Derating Factor DM DEAING FACO MINIMUM AMBIEN EMPEAUE '4070J3BJ thru '4115J3BJ '4125J3BJ thru '4219J3BJ '4250J3BJ thru '4395J3BJ A(MIN) - Minimum Ambient emperature - C Figure 7. I4JADCa

7 Applications Information Protection F1 High current Fuse h1 ISP 4350J3BJ ing Detector C1 1 D5 D6 D7 Polarity Bridge D1 D2 D3 D4 Hook Switch elay DC Sink C2 C3 2 1 Signal OC1 Isolation Barrier AI4MMABB Figure 8. ypical Application Circuit F1a x F1b ISP4350J3BJ F2a x d.c. feed F2b ISP4350J3BJ F1 & F2 = B1250 AI4MMAB Figure 9. ypical Application Circuit ISP is a registered trademark of Bourns Ltd., a Bourns Company, in the ed States and other countries, except that ISP is a registered trademark of Bourns, Inc. in China. Bourns is a registered trademark of Bourns, Inc. in the U.S. and other countries.