C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier

Transcription

1 C4D2 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 2 V = Q c =34. nc Features Package.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation emperature-independent Switching Extremely Fast Swtitching Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without hermal Runaway pplications PIN PIN 2 O-22-2 CSE Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C4D2 O-22-2 C4D2 Maximum Ratings (=2 C unless otherwise specified) Symbol Parameter Value Unit est Conditions Note RM Repetitive Peak Reverse Voltage 2 V SM Surge Peak Reverse Voltage 3 V DC Peak Reverse Voltage 2 V (VG) Maximum DC Current 8.2 =, no C component RM Repetitive Peak Forward Surge Current 26 8 =2, t P = ms, Half Sine Pulse =, t P = ms, Half Sine Pulse SM Non-Repetitive Forward Surge Current =2, t P = ms, Half Sine Pulse =, t P = ms, Half Sine Pulse Datasheet: C4D2 Rev. - P tot Power Dissipation 8 W =2 = c Maximum Case emperature Operating Junction Range - to +7 stg Storage emperature Range - to + O-22 Mounting orque 8.8 Nm lbf-in M3 Screw 6-32 Screw Subject to change without notice.

2 Electrical Characteristics Symbol Parameter yp. Max. Unit est Conditions Note V F I R Forward Voltage Reverse Current Q C otal Capacitive Charge 34. nc C otal Capacitance Note:. his is a majority carrier diode, so there is no reverse recovery charge V μ pf = =2 C = =7 C = 2 V =2 C = 2 V =7 C = 2 V, = di/dt = 2 /μs = V,, f = MHz = 4 V, = 2, f = MHz = 8 V, = 2, f = MHz hermal Characteristics Symbol Parameter yp. Max. Unit est Conditions Note R θjc hermal Resistance from Junction to Case.8 C/W ypical Performance =- C = 7 C =2 C =7 C Current I () F () Current I R (μ) (µ) =- C = 7 C =2 C =7 C Voltage V F Voltage Figure. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D2 Rev. -

3 ypical Performance (peak) () % Duty 3% Duty % Duty 7% Duty DC P ot (W) Figure 3. Current Derating Figure 4. Power Derating Qrr (nc) 2 2 C (pf) Figure. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D2 Rev. -

4 hermal Resistance (/W).... E-6 E-6 E-6 E-3 E-3 E-3 (Sec) Figure 7. ransient hermal Impedance Diode Model Vf = V + If * R V =.96 + ( j * -.22* -3 ) R =.8 + ( j * 8.* -4 ) Note: j is diode junction temperature in degrees Celsius 4 C4D2 Rev. -

5 Package Dimensions Package O-22-2 POS Inches Millimeters Min Max Min Max B Z C D 2 J B E H G F S P Q U Y X C D E F G H J R.97 R.97 L M N P L M N V W Q S U V W X PIN PIN 2 CSE Y z NOE:. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout O-22-2 Part Number Package Marking C4D2 O-22-2 C4D2 he levels of environmentally sensitive, persistent biologically toxic (PB), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 22/9/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through pril 2, 26. his product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 26-2 Cree, Inc. ll rights reserved. he information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US el: Fax: C4D2 Rev. -