International Distinguished Lecturer Program

Transcription

1 U International Distinguished Lecturer Program Ken-ya Hashimoto Chiba University Sponsored by The Institute of Electrical and Electronics Engineers (IEEE) 1 Ultrasonics, Ferroelectrics and Frequency Control (UFFC) Society

2 Introduction to RF SAW/BAW Filters Ken-ya Hashimoto Chiba University 2

3 Contents RF Filter Basics RF SAW and BAW Devices Major Players 3

4 Contents RF Filter Basics RF SAW and BAW Devices Major Players 4

5 Mobile Phone market Source: Prismark report March

6 Evolution of component count in a Mobile Phone 6

7 Role of Tx Filters Suppression of Spurious in Power Amplifier (PA) Output PA RF-BPF Output Power Reduction by 20% through Insertion loss IL of 1dB Spectrum Tx frequency Rx Interferer ω Current Consumption Heat Generation Ultimate IL Reduction Necessary! 7

8 Role of Rx Filters Interferer Suppression in Out-of-Band to Avoid Saturation, Mixing, etc. RF-BPF LNA Spectrum frequency Spectrum ω frequency ω Spectrum frequency ω Frontend Stage is Most Important (Low Loss + Low Noise) 8

9 Typical situation in a phone Strong interference from other phones and own Tx signal signal level 120 db lower! wanted Rx GPS 1850 Tx Rx ISM US-PCS f [MHz] 9

10 Highly selective RF-filters needed attenuation [db] US-PCS Rx filter pass band Tx Rx ISM f [MHz] 10

11 Trade-Off Between Temp. Stability & Bandwidth T drift (a) Wider Transition Bandwidth ω T drift (b) Narrower Transition Bandwidth Efficient Use of Frequency Resources Narrow Transition Bandwidth (Or Improve Production Yield) ω 11

12 When S 22 of PA output is NOT Negligible 20 LNA 10 0 S 21 (db) LNA + SAW filter -10 Ideal Case -20 f (GHz) RF Filter Causes Ripples 12

13 If Passive Filter is Symmetry and Loss-Less, S 22 =S 11, S 12 =S 21, S S 21 2 =1, S 11 S 21* +S 11* S 21 =0 S 2 11 = ± j S21 1 S 21 S 22 and S 11 are closely related! High Q factor possesses Longer Time Delay. Good Passive Filters can Generate Large Passband Ripples 13

14 Influence of Filter S 11 for Class AB PA Pout (dbm) without filter with filter with S 11 =0 with filter Pin (dbm)

15 Influence of Filter Impedance for Class AB PA j j j Pin (dbm) Pout (dbm) 15

16 Influence of Impedance for Harmonics for Class AB PA Pout (dbm) (1) (2) Pin (dbm) (1) 0.5 (2) Pin (dbm) PAE (1)Capacitive Termination for Harmonics (2) 50 Ω termination for Harmonics 16

17 S 11 Suppressor for RF Filters based on Quadrature Hybrids V 0 P 1 R0 P 4 Filter Filter P 3 P 2 R 0 R 0 R 0 17

18 Experimental Results 0-10 S 11 (db) frequency (GHz) S 21 (db) frequency (GHz) Using Huge Microstrip-Based Hybrids (10x5 cm 2 ) 18

19 Experimental Results S 11 (db) frequency (GHz) S 21 (db) frequency (GHz) C 12 L 1 C 12 L 2 L L 2 1 Using 1005 SMD-Based Hybrids C 12 C 12 19

20 Contents RF Filter Basics RF SAW & BAW Filters Major Players 20

21 Surface Acoustic Wave Bulk Acoustic Wave (BAW): Longitudinal Wave (Primary Wave) Transverse Wave (Share Wave, Secondary Wave) Propagation of Seismological Waves Surface Acoustic Wave (SAW): (Rayleigh SAW) 21

22 Surface Acoustic Wave (SAW) Device Interdigital Transducers (IDT) V in SAW V out Piezoelectric substrate Mass Production by Photolithography Low loss, Miniature & Low price Operation invhf-uhf ranges Line width λ/4=0.5µm (f=2ghz) 22

23 SAW Transversal Filters Impulse Response Independent Control of Amplitude and Phase Responses 23

24 Impulse Response Frequency Response t f t f t f + h ( t) = H ( f )exp( + 2πjft) df + H ( f ) = h( t)exp( 2πjft) dt 24

25 Ref. 15dB 10 db/div 1 db/div 50ns/div FREQUENCY (MHz) FREQUENCY (MHz) SAW Transversal Filter for CATV 25

26 SAW IF Filter for IS-95 Relative Insertion Loss in db Simulation Experiment Frequency in MHz Good Response but Higher Insertion Loss 26

27 SAW Resonator Filter Interdigital Transducer (IDT) λ Reflector (Al) Piezo-Substrate (42 o YX-LiTaO 3 ) Mass Production by Photolithography High Frequency, Low Loss, High Stability Cheap(?), Small(?) 27

28 Application of Electric Field to Piezoelectric Material, + - M i dv dt + ηv + k vdt = F V v k -1 M Piezoelectric Material C1 L C 0 V F η C 0 R (a) Electric + Mechanical Circuit (b) Electrical Equiv. Circuit Analogies between V F and I v reduce to M L, η R, k 1/C 28

29 Resonance Characteristics Admittance G B Frequency ωr Resonance Frequency ω r =1/ C 1 L Anti-Resonance Frequency ω a =1/ L(C 1-1 +C 0-1 ) -1 ω a 29

30 Ladder-Type SAW Filter Low Loss High Power Durability Moderate Out-of-Band Rejection Topology 30

31 Performance of Ladder-Type SAW Filter Scattering Parameter S 21 (db) Tx Rx Frequency (MHz) Scattering Parameter S 21 (db) W-CDMA-Rx Fujitsu FAR-F6CP-2G1400-L21M 31

32 1nH ( gold wire of 1mm length) 1GHz 1pF ( 1mm 1mm pad on LiNbO 3 substrate) 1GHz Influence of parasitic impedances is significant in GHz range! 32

33 Influence of Common Impedance L i Filter Chip L o S 1 S 2 S 3 C i C e1 P 1 C e2 P 2 C e3 P 3 C e4 C o L e1 L e1 L e1 L c Equivalent Circuit Origin of L c 33

34 Influence of Mutual L M L 1 L 2 L 1 -M L 2 -M M V V 1 2 di1 = L1 dt di = M dt 1 + M + L 2 di 2 dt di dt 2 = ( L 1 = ( L 2 di1 M ) + M dt di 2 M ) + M dt d dt ( I 1 d ( I dt + 1 I + 2 I ) 2 ) 34

35 Antenna Duplexer for US PCS Tx Band strip line λ/4 SAW filter, TX TX-port Antennaport Rx Band strip line λ/4 SAW filter, RX RX-port 0 Attenuation [db] Tx band Rx band Frequency [M Hz] Courtesy of Fujitsu Labs. 35

36 Temperature Compensation (1) Bonding with Small Thermal Expansion Coef. J.Tsutsumi, et al., Proc. IEEE Ultrason. Symp. (2004) pp Fujitsu Labs. 36

37 Temperature Compensation (2) Depositing SiO 2 with Negative Temp. Coef. M.Kadota, et al., Proc. IEEE Ultrason. Symp. (2004) pp Murata MFG 37

38 Double Mode SAW (DMS) Filter Symmetrical & Antisymmetrical Resonances Electrically Isolated I/O Insertion loss (db) ωs r Frequency ωa r ω Good Out-of-Band Rejection Balun Function Transformer Function Low Loss Lower Power Durability 38

39 Structure of Pitch-Modulated IDT & Reflector Conventional Structure Pitch-Modulated Structure Gap Controlled Modulated REFECTOR IDT IDT Presented at IEEE 2004 UFFC Conf. Modulated 39

40 DMS Filter with Modulated Structure Scattering parameter. S 21 [db] Frequency [MHz] Scattering parameter. S 21 [db] Fujitsu FAR-F5EB-942M50-B28E 40

41 Integrated RF Circuit (a) Balanced I/O (b) Unbalanced I/O Current Antenna and RF Stage are Unbalanced 41

42 Discrete SAW Filter & Balun Front-end BPF LNA Inter-stage BPF Balun Mixer IF-BPF IF-Amp SAW Filter with Balun Function Front-end Inter-stage BPF LNA BPF Mixer IF-BPF IF-Amp 42

43 DMS Filter (Ideally No Common Signal) Acoustically Coupled but Electrically Isolated V in V out+ V out- Common Signal Generation by Parasitics 43

44 Z-conversion by DMS Filter V out+ V in V out- V in V out+ V out- 44

45 CSP for SAW Chip By EPCOS Embedded L 45

46 Wire-Based Packaging vs. CSP M.Goetz, C.Jones, J.Rao, K.Bhattacharjee and J.Flowers: "Advanced SAW Packaging for Modular Integration", Proc. 2nd International Symp. on Acoustic Wave Devices for Future Mobile Communication Systems (2004) pp

47 Film Bulk Acoustic Resonator, FBAR resonator cavity resonator cavity resonator (a) Substrate Etching (Fujitsu Labs.) (b) Surface Micromachining (Agilent, Epcos, ST Micro) (c) Multi-Layer Reflector (Infineon, Philips), SMR (Solidly-Mounted Resonator) 47

48 passivation overlap Oxide AlN SiO 2 W SiN x SiO 2 48

49 Ladder-Type FBAR Filter By Agilent R. Ruby, et al., IEEE Microwave Symp. (2004) pp

50 Transversally Coupled Double-Mode Filter Electrodes Si Symmetrical & Antisymmetrical Resonances R in C 0 E in L m L m a C m a s C m s a R m s R m 1:-1 Equivalent Circuit C 0 R out 1-Port Resonator When Parallel- Connected Another 1-Port Resonator When Parallel-Connected 50 with Inversion

51 Fundamental Resonator by Quartz Anisotropic Etching of Quartz Bulk Good Temperature Stability Use of Single Crystal = High Q, High Uniformity Fundamental Resonator Filter on ATcut Quartz (TOYOCOM TF2-D0AD6) 51

52 Cascaded Coupled FBAR Filter Electrically Isolated I/O By Infineon G. G. Fattinger, et al., IEEE Microwave Symp. (2004) pp

53 FBAR with Balun & Transformer Func. 50Ω:50Ω 50Ω:200Ω 53 By Infineon

54 CSP for FBARBy Infineon M. Franosch, et al., IEEE Microwave Symp. (2004) pp

55 Agilent s Latest Product/Technology: High Q Resonators and Filters manufactured in an all-silicon package. Size 0.7 X 0.8 X 0.2 mm 3 (GSM filter kit shown on a single kernel of short grain rice) 55

56 Filter Response for Wireless LAN 0-10 FBAR filter Attenuation (db) SAW filter Fujitsu Labs Frequency (GHz) Influence of Electrode Resistance Obvious for SAW at 5 GHz Range 56 FBAR Beneficial over 2 GHz?

57 Acoustic Migration Stress-Induced Movement of Grain Boundary Electrode Shortage Countermeasure: Development of New Electrode Material System Electrode Scarcely Deformed in BAW Case 57

58 Low Loss and Wideband SAW Filter Employing Cu-Grating/15 o YX-LiNbO 3 Substrate Structure 0 Insertion loss [db] Frequency, f [GHz]

59 Constant-Group-Delay SAW Filter Using RSPUDTs Insertion Loss (d B) (a) Frequency( MHz ) (a)amplitude response Exp Sim Group delay (ns) Frequency (MHz) (b) Group delay response 59

60 Contents RF Filter Basics RF SAW and BAR Devices Major Players 60

61 SAW Major Players EPCOS, Germany (RF+IF+Dup+FEM) Murata, Japan (RF+IF+Dup+FEM) Fujitsu, Japan (RF+IF+Dup) SEMCO, Korea (RF+Dup+FEM) SAWTEK, USA (RF+IF+Dup+FEM) Matsushita, Japan (Dup) Hitachi, Japan (FEM) Toyocom-Epson, Japan (RF+IF) Kyocera, Japan (RF+IF) NDK, Japan (RF+IF) 61

62 FBAR Major Players Agilent Technology, USA Infineon Semiconductors, Germany Philips Semiconductors, Nederlands TFR Technologies (SAWTEK), USA Fujitsu, Japan EPCOS, Germany 62

63 FBAR Developers ST Microelectronics, France Toshiba, Japan Asahi Microsystem, Japan Sony, Japan Samsung, Korea Matsushita, Japan Ube Industries, Japan Asahi Glass, Japan Kinseki, Japan Hitachi, Japan Murata, Japan 63

64 FBAR Developers (continue) Intel, Israel Freescale, USA Skyworks, USA (?) RF MicroDevices, USA (?) NGK Insulators, Japan? Soshin Electric, Japan? Denso, Japan? Toppan Printing, Japan? Dai Nippon Printing, Japan? Other foundries? 64