HIGH FREQUENCY DEVICES. Mitsubishi High Frequency Solutions for Communication Networks in the Information Era. High Frequency Devices

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1 HIGH FREQUENCY DEVICES Mitsubishi High Frequency Solutions for Communication Networks in the Information Era. High Frequency Devices

2 MITSUBISHI GaAs/GaN Devices: The Best Solution for Realizing Communication networks, such as high speed Internet, videoondemand and highspeed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed for satellite communication systems to base stations and cellular handset applications. LINE UP High Frequency Devices MAP FOR SELECTION GaAs FET SERIES FOR MICROWAVEBAND LOWNOISE AMPLIFIERS Noise Figure NF [db] General Use GHz GHz GHz 0GHz MGF1AM MGF1AM For Communications For Mobile Terminal MGFAM MGFBM/AM GaAs FET Series for Microwaveband LowNoise Amplifiers GaAs FET Series for Microwaveband High Power Amplifiers (Discrete Devices) GaN FET Series for Microwaveband High Power Amplifiers (Discrete Devices) Internally Matched GaAs FET Series for Microwaveband High Power Amplifiers GaAs Power Amplifiers for Mobile Phone GaAs Amplifiers for WiMAX / WiFi MGFA MGFCM MGF1AL MGFB MGFBL Output Power P 1dB [dbm] MAP For SELECTION PRODUCT LIST, Industrial Use GHz 1.0 Lead Less Ceramic Plastic Mold pin Mold (GD) (GD) (GD) MGFA Ceramic (GD) 1. 1

3 the Information Era. GaAs FET SERIES FOR MICROWAVEBAND HIGH POWER AMPLIFIERS (Discrete Devices) Output Power [dbm] 1 Application Radio Link System Satellite Communication : New Product ~L/S/C Band (~GHz) MGF0A MGF00B MGF00A GF MGF0A MGF00A MGF00B MGF01A MGF01A GF0 MGF00A MGF0P MGF01A MGF01P MGF01A MGF0P GaN FET SERIES FOR MICROWAVEBAND HIGH POWER AMPLIFIERS (Discrete Devices) Output Power [dbm] GF ~L/S/C Band (~GHz) MGF0G MGF0G ~X/Ku Band (~.GHz) GF1 GF1 MGFA MGFA GF MGF1A MGFA MGFA MGF1A MGF1A MGF1A MGFA GD GaN MGF0G Application Radio Link System Base Station : Under Development

4 MAP FOR SELECTION INTERNALLY MATCHED GaAs FET SERIES FOR MICROWAVEBAND HIGH POWER AMPLIFIERS Output Power [dbm] GF0 GaAs POWER AMPLIFIERS FOR MOBILE PHONE Frequency [GHz] 0 Application.0.0 L/S Band (1~/~GHz) C Band (~GHz) X/Ku Band (.0~.GHz) MGFSB Base Station Radio Link System Mobile Telephone BA0B 1.~1.GHz 0.~0.GHz WCDMA (HSPA) Vcc control PA BA0B 1.~1.GHz BA0B 1.~1.GHz 1.0~1.GHz 0.~0.GHz MGFCV/B MGFCV/B MGFCV MGFCV MGFCV MGFCVA Radio Link System Radar System WCDMA (HSPA, LTE) Switchable PA BA0D1 1.~1.GHz BA0D 1.~1.1GHz BA0D 1.1~1.GHz BA0D 1.~1.GHz GF GF GF1 GF NCDMA Vcc control PA BA0 1.~1.GHz MGFKA MGFK1A MGFXV MGFKA MGFXV GF GF GF Satellite Communication NCDMA Switchable PA BA0B 1.~1.GHz 0.~0.GHz 1.0 BA0D 0.0~0.1GHz BA0D 0.~0.GHz BA0A 0.~0.GHz 0.~0.GHz BA0E1 0.~0.1GHz : New Product : Under Development

5 GaAs AMPLIFIERS FOR WiMAX / WiFi Output Power [dbm] MGFSE MGFSEA MGFSE GH1 GH.0..0 Frequency [GHz] High Frequency Devices Naming System GaAs FET (Discrete) MGF 01 P Internally Matched GaAs FET and GaAs Power Amplifier for WiMAX/WiFi MGF C B B Freq. Band : L, S, C, X, K, Ku Typical Output power in dbm ex.=dbm=w(typ.) Plastic Mold GaN : P : G Internally Matched : V, A, B Multi Stage FET Amp : H Multi Stage HBT Amp : E MGFSE MGFSE MGFSE Freq. Band in GHz ex.=.~.ghz Series Number GaAs Power Amplifier BA 01 D1 Device Stracture : FA(FET), BA(Bipolar Transistor) Freq. Band in GHz Stage Number Series Number

PRODUCT LIST GaAs FET SERIES FOR MICROWAVEBAND LOWNOISE AMPLIFIERS GD GD GD Type Number MGF1AL MGFA MGF1AM MGFAM MGFBM MGFCM MGFAM MGFAM MGFB MGFBL Ta= C : New Product 0.

6 PRODUCT LIST GaAs FET SERIES FOR MICROWAVEBAND LOWNOISE AMPLIFIERS GD GD GD Type Number MGF1AL MGFA MGF1AM MGFAM MGFBM MGFCM MGFAM MGFAM MGFB MGFBL Ta= C : New Product GaAs FET SERIES FOR MICROWAVEBAND HIGH POWER AMPLIFIERS (Discrete Devices) GD Type Number MGF00A MGF00A MGF00A MGF00B MGF00B MGF00A MGF0A MGF0A MGF01A MGF01A MGF01A MGF00A MGF01A MGF01P MGF0P MGF0P MGFA MGFA MGF1A MGF1A MGFA MGFA MGF1A MGFA MGFA MGF1A Ta= C : Industrial grade : New Product Noise Figure [db] GD Associated [db] Typ. Max. Min. Typ Frequency [GHz] 0 0 GF GF1 GF1 Output Power at 1dB Compression Output Linear rd Order IM [dbm] Power Power Distortion [dbc] [dbm] Min. Typ. [db] Min. Typ Power Added Frequency Efficiency [GHz] [%] DrainSource Voltage [V] Drain Source Voltage [V]. Drain Current [ma] GF0 Drain Current [A] Thermal Resistance [ C/W] Typ GF Max GD GD GD GD GD GD GD GD GD GD GF0 GF GF GF1 GF1 GF GF1 GF1 GF0 GF0 GF0 GF0 GF0 GF GF GF GD GD GD GD GD GF1 GF1 GF1 GF1 GD

GaN FET SERIES FOR MICROWAVEBAND HIGH POWER AMPLIFIERS (Discrete Devices) GF Type Number MGF0G MGF0G MGF0G Ta= C : Under Development Ta= C Type Number MGFCV MGFCV MGFCV MGFCBB MGFSBB MGFCBB MGFCBB

7 GaN FET SERIES FOR MICROWAVEBAND HIGH POWER AMPLIFIERS (Discrete Devices) GF Type Number MGF0G MGF0G MGF0G Ta= C : Under Development Ta= C Type Number MGFCV MGFCV MGFCV MGFCBB MGFSBB MGFCBB MGFCBB MGFSVA MGFSVA MGFSVA MGFSV Output Power at 1dB Compression Output Linear rd Order IM [dbm] Power Power Distortion [dbc] [dbm] Min. Typ. [db] Min. Typ. 1 Output Power at 1dB Compression Output Linear rd Order IM [dbm] Power Power Distortion [dbc] [dbm] Min. Typ. [db] Min. Typ Drain Efficiency [%] Frequency [GHz] INTERNALLY MATCHED GaAs FET SERIES FOR WiMAX BASE STATION... Power Added Frequency Efficiency [GHz] [%].~..~..~..~..~..~. ~..1~..~..~..~. Drain Source Voltage [V] Drain Source Voltage [V] Drain Current [A] GF GF1 GF Drain Current [A] Thermal Resistance [ C/W] Typ.. Typ Max. Thermal Resistance [ C/W] GF0 Max GF GF GF GF GF GF1 GF0 GF0 GF0 GF0 GF GF GF GF

8 Ta= C MGFKA MGFK1A MGFKA MGFXV01 MGFXV ~..0~..0~ GF GF GF GF GF Type Number Min. Typ. Min. Typ. Power Added Efficiency [%] Frequency [GHz] Drain Source Voltage [V] Drain Current [A] Output Power at 1dB Compression [dbm] Typ. Max. Thermal Resistance [ C/W] Linear Power [db] rd Order IM Distortion [dbc] Ta= C MGFCV0A MGFCV MGFCVA MGFCVA MGFCV0 MGFCV MGFCV MGFCV MGFCV1 MGFCV MGFCV0 MGFCV MGFCVA MGFCV MGFCV0A MGFCVA MGFCA0 MGFCV MGFCV1A MGFCVA MGFCV0A MGFCV MGFCVA MGFCVA MGFCV1A MGFCVA MGFCV MGFCV MGFCVA MGFCVA MGFCVA MGFCV MGFCV MGFCVA ~.0.~..~..~..~.0.~..~..~..1~..1~..~.0.~..~..~..~.0.~..~.0.~..1~..~..~.0.~..~..~..1~..~..~..~..~..~..~..~..~..~ GF GF GF GF GF1 GF1 GF1 GF1 GF GF GF1 GF1 GF GF GF GF GF GF GF GF GF GF GF GF GF GF GF1 GF GF GF GF GF GF GF Type Number Min. Typ. Min. Typ. Power Added Efficiency [%] Frequency [GHz] Drain Source Voltage [V] Drain Current [A] Output Power at 1dB Compression [dbm] Typ. Max. Thermal Resistance [ C/W] Linear Power [db] rd Order IM Distortion [dbc] INTERNALLY MATCHED GaAs FET SERIES FOR C BAND HIGH POWER AMPLIFIERS INTERNALLY MATCHED GaAs FET SERIES FOR X/Ku BAND HIGH POWER AMPLIFIERS GF GF1 GF GF GF GF GF PRODUCT LIST

9 GaAs HYBRID IC FOR MOBILE PHONE BA0D1 Frequency Type Number Application Po [dbm] Vcc [V] [MHz] BA0 BA0A BA0B BA01 BA0 BA0 BA0B BA0B BA0B BA0E1 BA0D1 BA0D BA0D BA0D BA0D BA0D : New Product : Under Development : New Product NCDMA NCDMA NCDMA HSDPA HSDPA HSDPA HSPA HSPA LTE 10~1 ~ ~ ~ 10~1 ~ 10~10 10~1.~. ~ 10~10 ~ 10~1 10~10 ~1 10~10 ~.~. 10~1 0~1 1~1 GaAs AMPLIFIER FOR WiMAX / WiFi Vref [V] PAE [%] Pin [dbm] Frequency Type Number Pout & EVM [db] Vcc [V] Vref [V] PAE [%] [MHz] MGFSEA MGFSE MGFSE MGFSE MGFSE MGFSE.~..~. ~..~..~..~. dbm@.% dbm@.% dbm@.%.dbm@.%.dbm@.%.dbm@.% GH GH Size 1.mm 1mm 1mm 1.mm 1.mm 1.mm 1mm. 1mm. 1mm 1mm 1mm 1mm 1mm 1mm xx1mm xx1mm GH1 GH1 GH1 GH GH GH All Products Here Are RoHS Compliant

10 APPLICATION EXAMPLES Lineup for GHz Band LNB LNB ANT Broadcast Satellite BS Tuner VCR ANT Audio Low Noise Amp. Mixer 1st Stage nd Stage IF Amp. LO Performance of LNB 1st Stage nd Stage Low Noise Model MGF1AL MGF1AL Standard Model MGFAM MGFCM Lineup for Microwave Links ex:. to.ghz Microwave Transmitter & Receiver Unit LNA Down Conv. HPA Up Conv. AVTV To Tuner Mixer MGFCM MGFCM Indoor Unit W Power Amp. Chain 1dBm MGFA MGFA MGFA MGFCV MGFCV 1. dbm 0W Power Amp. Chain 1dBm MGFA MGFA MGFA MGFCV MGFCA 1 dbm

Lineup for Satellite Communication Communication Satellite W Power Amp. Chain dbm W Power Amp. Chain dbm /GHz VSAT Microwave Transmitter & Receiver Unit LNA Down Conv. Up Conv.

11 Lineup for Satellite Communication Communication Satellite W Power Amp. Chain dbm W Power Amp. Chain dbm /GHz VSAT Microwave Transmitter & Receiver Unit LNA Down Conv. Up Conv. MGFA MGFA MGFA MGFA MGFKA.. MGFA MGFA MGFA MGFK1A MGFKA...0 GaAs Hybrid IC for Mobile Phone Tx block configuration for mobile phone Cellular phone Ex.1: Dual band configuration DC/DC Vref Gen. Smart meter Net book HPA Vending machine Ex.: Triple band configuration RFIC BA0D BA0D Indoor Unit dbm dbm RFIC ANTSW BA0D1 ANTSW BA0B MITSUBISHI ELECTRIC SEMICONDUCTORS GLOBAL WEB SITE

12 HIGH FREQUENCY DEVICES Please see here in detail. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. HEAD OFFICE: TOKYO BLDG.,, MARUNOUCHI, CHIYODAKU, TOKYO 0, JAPAN HCVM KI0 Printed in Japan (TOT) 0 MITSUBISHI ELECTRIC CORPORATION New publication effective Sep. 0. Specifications subject to change without notice.

RoHS COMPLIANT MGF4841AL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.

RoHS COMPLIANT MGF4841AL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking. DESCRIPTION The power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers. FEATURES High gain and High Pout Glp=11.dB, P1dB=14.dBm, Pout,sat=16.dBm @ f=12ghz APPLICATION