SILICON RF DEVICES. Silicon RF Devices

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1 SILICON RF DEVICES Silicon RF Devices

2 Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios, Car Phones for GSM/AMPS and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. LINE UP Silicon RF Devices FET Hybrid IC SELECTION MAP HIGH OUTPUT POWER Si MOS FET (DISCRETE) Output Power [W] 00 RD00HHF RD0HHF RD0HVF RDHVF RD2MVP/RD2MVS RD6HHF 0 RD0HUF2 RD5HUF2 RD5HVF.6V Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET Module 9.6v Operation High Output Power Si MOS FET Module v Operation High Output Power Si MOS FET Module RDHUF RDHUF RD0MMS2 MAP For SELECTION RDHMS2 RDHMF RDHMS2 RD20HMF PRODUCT LIST : V Operation : V Operation :.6V Operation 5 RD06HHF RD06HVF RD00HHS RD0MUS2B RD09MUP2 RD02LUS2 RD02MUSB RD0MUS2B RD00HVS RD05MMP RD04HMS GHz Frequency [MHz] : Under Development

3 HIGH OUTPUT POWER Si MOS FET MODULE Output Power [W] 80 RA80H45M RAHMA/RAHM RAH84M/4M/42M : V Operation : 9.6V Operation RAHM/84M/4M/42M : V Operation RAH4M/42M RAH68M RAH8994M RA5H56M/RAH56M RAHM/RAHM RAHM/4M/42M/4M/52M RAH2M RAH22M RAH08M RA20H808M RA20H8994M 20 RAHM RAHM/4M/42M RAH889MB RA0NM/4M/42M RA0M08M RA0HM/4M/42M 0 RA08NM RA08HM RA0MM/4M/42M RA0H08M RA0MM RA0M22M RA0M84M RA02M808MD RA0M808M RA06H8285M RA0M9595M (8V) RA0M8894M RA0M5MD/4MD/4MD Frequency [MHz] : New Product 2

PRODUCT LIST.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number Structure RD02LUS2 25 8.6 Ta=25 C : Gate Protection Diode : Under Development Max.

4 PRODUCT LIST.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number Structure RD02LUS Ta=25 C : Gate Protection Diode : Under Development Max.ratings VDSS [V] Pch [W] f [MHz] V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number RD0MUS2B RD02MUSB RD05MMP RD0MUS2B RD09MUP2 RD0MMS2 RD2MVP RD2MVS Structure Ta=25 C : Gate Protection Diode : Under Development Max.ratings VDSS [V] Pch [W] f [MHz] 52 5/ 94 5~5 4~ V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number RD00HHS RD00HVS RD04HMS2 RD06HHF RD06HVF RD5HVF RD6HHF RD20HMF RDHVF RDHUF RDHMS2 RD5HUF2 RDHMF RDHMS2 RDHUF RD0HHF RD0HVF RD0HUF2 RD00HHF Structure Max.ratings VDSS [V] Pch [W] f [MHz] 5 5~5 80~ 890~9 5 5/ ~5 4~ ~5 4~ ~5 4~ / 5~5 4~5 Pin [W] 0.2 Pin [W] 0.0 / Pin [W] / / Po (min) [W] 2.typ. Po (min) [W].6typ. 2/ typ. 0.5 Po (min) [W] typ. 6typ. 5typ / typ. 4typ. typ. typ. 4typ. 84typ. 5typ. 5typ. 0 0/ 84typ. 5typ. 00 nd (min) [%] 0typ. nd (min) [%] 0typ. / typ. nd (min) [%] typ. 62typ. 5typ. / 2typ. typ. typ. 2typ. typ. 4typ. 64typ. typ. / 4typ. 64typ. Package SOT-89 Package SOT-89 SLP PMM SLP PMM SLP PMM SLP Package SOT-89 SOT-89 SLP TO-220S TO-220S TO-220S TO-220S Ceramic (Small) Ceramic (Small) Ceramic (Small) HPM00 HPM00 Ceramic (Large) HPM004 Ceramic (Large) Ceramic (Large) Ceramic (Large) HPM002 Ceramic (Large) Ta=25 C : Gate Protection Diode : Under Development

SOT-89 SLP TO-220S PMM HPM Ceramic (Small) Ceramic (Large) Type Name Definition of Silicon RF

Output Power (W) Operation Voltage (V) Symbol HIGH OUTPUT POWER Si MOS FET MODULE M N H

6V V RA 0 M 42 M Frequency Range (MHz) Symbol Frequency Range H MHz V 5MHz U MHz M 800MHz

Frequency Range (MHz) Frequency Unit Output Power (W) Symbol M N H 6V V Symbol (Example) 42

5 SOT-89 SLP TO-220S PMM HPM Ceramic (Small) Ceramic (Large) Type Name Definition of Silicon RF Devices HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 0 M U S 2B Si MOS FET (Discrete) Output Power (W) Operation Voltage (V) Symbol HIGH OUTPUT POWER Si MOS FET MODULE M N H Voltage V 9.6V V RA 0 M 42 M Frequency Range (MHz) Symbol Frequency Range H MHz V 5MHz U MHz M 800MHz Symbol S F P Segment Mold Flange Power Mold Mini Serial Number Module Operation Voltage (V) Frequency Range (MHz) Frequency Unit Output Power (W) Symbol M N H Voltage V 9.6V V Symbol (Example) 42 Frequency Range (Example) 4~ MHz 5~ 5MHz Symbol M G Unit MHz GHz Note: Type number show the outline of products. For detail specification, Please confirm a formal specification. 4

PRODUCT LIST V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C *: When Po=2.

6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE RA0NM RA0N4M RA0N42M RA08NM Ta=25

RA0M08M RA0MM RA0M22M RA0MM RA0M84M RA0M4M RA0M42M Type Number Max.ratings Max.

4 80 94 954 88 5 20 0 4 max 0 5 HS H54 8 9.6 9.6 9.6 9.6 Pin [W] 0.0 0.0 0.0 0.0 0.0 Pin [W] Po (min) [W].

6 PRODUCT LIST V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C *: When Po=2.5W *2: When Po=6.W 9.6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE RA0NM RA0N4M RA0N42M RA08NM Ta=25 C Type Number RA02M808MD RA0M5MD RA0M4MD RA0M4MD RA0M808M RA0M8894M RA0M9595M RA0M08M RA0MM RA0M22M RA0MM RA0M84M RA0M4M RA0M42M Type Number Max.ratings Max.ratings f [MHz] min f [MHz] min max max 0 5 HS H Pin [W] Pin [W] Po (min) [W] Po (min) [W] nd (min) [%] * 4* 2 4* 2 4* nd (min) [%] Package H54 H54 H54 H54 Package H5 5

7 V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C : New Product All Products Here Are RoHS Compliant RA06H8285M RA0H08M RA0HM RA0H4M RA0H42M RA08HM RA08H84MD RA08H4MD RAHM RAHM RAH4M RAH42M RAH889MA RAH889MB RA20H808M RA20H8994M RAH08M RAHM RAHM RAH2M RAH22M RAHM RAH4M RAH4M RAH42M RAH52M RAH56M RA5H56M RAHMR RAH4M RAH42M RAH68M RAH8994M RAHM RAH84M RAH4M RAH42M RAHM RAHMA RAH84M RAH4M RAH42M RA80H45M m 0.m (490-) (4-490) (490-) 4 (4-490) HS (5-pins) (5-pins) HS H5 H2RS Type Number f [MHz] min max Max.ratings Pin [W] Po (min) [W] nd (min) [%] Package 6

8 APPLICATION VHF~800MHZ BAND V OPERATION RECOMMENDED LINE UP 5mW mw mw RD00HVS RD0MUS2B RD0MUS2B RD5HVF RD02MUSB RD0MUS2B RD0MUS2B RD0HVF 5MHz 5MHz 80MHz 0.W 5MHz RD04HMS2 RD0HUF2 0.2W 5MHz 4 MHz 5mW mw VHF~UHF BAND V OPERATION RECOMMENDED LINE UP W RD00HVS RD0MUS2B RD5HVF RD04HMS2 RD02MUSB RD0MUS2B RDHUF RD5HUF2 MHz MHz MHz 0.2W 5MHz 4 MHz Precautions for the use of Mitsubishi Electric silicon RF power amplifier devices 0.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 0.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 04.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than deg/c under standard conditions, and less than 90deg/C under extreme conditions. 05.RA series products are designed to operate into a nominal load impedance of ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and smoking of other parts including the substrate in the module. 06.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 0.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 08.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it s original form. 09.For additional Safety first in your circuit design and notes regarding the materials, please refer the last page of this manual. 0.Please refer to the additional precautions in the formal specification sheet. MITSUBISHI ELECTRIC SEMICONDUCTORS GLOBAL WEB SITE

9 PACKAGE OUTLINE SOT-89 Gate Source Drain TO-220S Gate Source Drain 2.5±0. 0.8MIN SLP 0.4± ±0.5.5±0. Drain Source 4.4±0..6±0. ø.0 4.9±0.5 INDEX MARK (Gate) 0.5± ± 0.9*±0..5±0. Gate 0. MAX Ceramic (Small) 0.4± ±.0± (0.25) / * The dimensions of new products are 0.5 ± ± ±0. 8.0±0..6± Drain Source 6.6±0..5±0. 4.6±.± 0.8± 4-C 4.0±0.4 ø.2±0.5 2.±0..0±0.4* Gate 5.±0.5.9±0. 2.0± (0.25) (0.22).5± (0.22) 2.±0.6.2±0.4 2.MIN PMM (.6) INDEX MARK [Gate] 0.±0. 9± MAX 5deg 8.0±0.2 TOP VIEW SIDE VIEW 9.± MAX.2±0.4.±0.6 Drain [output] Source [GND] 0.2± Ceramic (Large) 24.0±0.6 (4.5) 6.2±0.2 DETAIL A.8±0. Standoff=max 25.0±0..0±0.5.0±0. 5.0±0. 8.5±0.25.6± / ±0.5 SIDE VIEW DETAIL A.± / 0.5 Gate [input] Source 5.6± ± ±0.2 Drain Source 4 C2 0.0±0. ø.2±0.5.±0.2.0± ±0.2 BOTTOM VIEW Gate ± ±0. * 0.65±0.2 * The height of terminals shows root. * The height of terminals shows root. 8

PACKAGE OUTLINE HPM00 5.56 Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) a-a SECTION 2.95 2.69 6.8.0.5 RF Input(Pin) Gate Voltage(VGG) 24. 8.

10 PACKAGE OUTLINE HPM Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) a-a SECTION RF Input(Pin) Gate Voltage(VGG) a HPM00 (with CenterSourceElectrode) 5.56 (.) (4.4) 6.0±.0 2.± ± ±0.2 6.±.0.±.0 8.8±.0 2.9±.0 Area "A" a-a SECTION Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) SOURCE (COMMON) (5.4).0.0±0.2 () a Drain Voltage(VDD) RF Output(Pout) 0.±0.5 (.5) a' a..5± ± ±0.2.5± (5.4) R.5± ø ø.0 RF Ground(Fin) 6.0±0.2.4±0.2 tolerance of no designation ; ±0.5 HPM002 (with CenterSourceElectrode) 5.56 Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON).0±0. 5± ± ± ± a-a SECTION RF Input(Pin) Gate Voltage(VGG) 2.0± / ± ±.0 6.5± 4.5±.5± a 0.. a.0.6 HPM004 (with CenterSourceElectrode) 5.56 a-a SECTION Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON) Drain Voltage(VDD) RF Output(Pout) 66.0±0.5.0± ±0.5 2-R2±0.5 (.4) a' a ±0. ø0.±0.5 2.±0..5± ±0.5 (9.8) 5.88 ø ø.0 RF Ground(Fin) 9

11 H2RS 2 R2± ± 5± 0.±.+0.6/ 0.4 H5 4.4 ±0.5.0±0. 5± ± ± ± 2.0± / ± RF Input(Pin) Gate Voltage(VGG) RF Input(Pin) Gate Voltage(VGG) ± ± 0.5±.00± ± ± ±0.8 6± ± 49.8± Drain Voltage(VDD) RF Output(Pout) Drain Voltage(VDD) RF Output(Pout) 44± 56± 66.0±0.5.0± ±0.5 2 R2± ± 49.5± 54.0± (.4) RF Input(Pin) Gate Voltage(VGG) 4.0±0. ø0.±0.5 2.±0..5±0.5.0±0.5 (9.8) (.26) 0.6±0.2 (2.6) RF Ground(Fin) 4±0.5.±0.5 RF Ground(Fin) 8± (9.9) R.5±0. Drain Voltage(VDD) RF Output(Pout) 0± 0.6± RF Ground(Fin) (6.) (2.) HS H54 4± / 0.4 (.) (4.4) 6.0±.0 2.± ± RF Input(Pin) Gate Voltage(VGG) 8.± 2.± 4.± 5.± (49.5) Drain Voltage(VDD) RF Output(Pout).5± 5.5±0.5.4± 2 R.6±0.2 ø0.±0.5 2.±0. ±0.5 6± (6.4) RF Ground(Fin) RF Input(Pin) Final Stage Gate Voltage(VGG2) RF Output(Pout) First Stage Gate Voltage(VGG) Drain Voltage(VDD) RF Ground(Fin) 26.6± ±0.2 6.±.0 0.4±.0.±.0 8.8±.0 2.9±.0 Area "A".0±0.2 (5.4) () ± (.5).5± ± ±0.2 (6.).5± R.5±0. (5.4) 6.0±0.2.4±0.2 tolerance of no designation ; ±0.5 (2.) 0

12 SILICON RF DEVICES Please visit our website for further details. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. HEAD OFFICE: TOKYO BLDG., 2--, MARUNOUCHI, CHIYODA-KU, TOKYO 00-80, JAPAN H-CX624-L KI- Printed in Japan (TOT) 20 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. New publication effective Nov. 20. Specifications subject to change without notice.

SILICON RF DEVICES. Better Performance for Radio Communication Network. Silicon RF Devices

SILICON RF DEVICES. Better Performance for Radio Communication Network. Silicon RF Devices SILICON RF DEVICES Better Performance for Radio Communication Network Silicon RF Devices Better Performance for Radio Communication Network MITSUBISHI Silicon RF Devices are Key parts of RF Power Amplifications