SILICON RF DEVICES. Better Performance for Radio Communication Network. Silicon RF Devices

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1 SILICON RF DEVICES Better Performance for Radio Communication Network Silicon RF Devices

2 Better Performance for Radio Communication Network MITSUBISHI Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios, Car Phones for GSM/AMPS and TELEMATICS for automotive. MITSUBISHI Silicon RF Devices strongly support for Radio communication network. LINE UP Silicon RF Devices MAP FOR SELECTION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Output Power [W] RD100HHF1 RD0HHF1 RD1HHF1 RD0HHF1 RD0HVF1 RD00HHS1 FET Hybrid IC RD0HVF1 RDHVF1 RD12MVP1/RD12MVS1 RD0HUF2 RDHUF2 RD15HVF1 v Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET (Discrete).v/v Operation High Output Power Si MOS FET Module 9.v Operation High Output Power Si MOS FET Module v Operation High Output Power Si MOS FET Module RDHUF1 RDHUF1 RD09MUP2 RD0MVS2/RD0MVS1B/RD0MUS2B RDHMF1 RD20HMF1 MAP For SELECTION RD02MUS1/RD02MUS2/RD02MUS1B RD01MUS1/RD01MUS2 RD00HVS1 : V Operation : V Operation RD05MMP1 PRODUCT LIST 5 5 RD04HMS GHz Frequency [MHz] 1

3 HIGH OUTPUT POWER Si MOS FET MODULE Output Power [W] RAH1M1A/RAH1M RAH151M/RAH151M1 RAH1M/RAH1M1 RAH08M RAH21M RA1H1M RAH212M RA0M08M RA08N1M RA08H1M RAH84M1 /4M1/42M1 RAHM/84M/4M/42M RAH4M/42M RAHM/4M/42M/4M1/52M1 RA1HM/4M/42M RA0NM/4M/42M RA0HM/4M/42M RA0M4MSA/42MSA RA0MM/4M/42M RAH8M1 RA20H808M : V Operation : 9.V Operation :.V/V Operation RAH8994M1 RA20H8994M RA1H8891MB RA01L9595M (.V) RA0M9595M (8V) RA05H9595M (14V) RA0H08M RA0M1MSA RA0M1M RA0M212M RA0M84M RA02M808MD RA0M808M RA0H8285M RA0M8894M RA05H89M (14V) RA0MMD/4MD/4MD RA01L89MA (.V) Frequency [MHz] 2

4 PRODUCT LIST V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number RD01MUS1 RD01MUS2 RD02MUS1 RD02MUS1B RD02MUS2 RD05MMP1 RD0MUS2B RD0MVS1B RD0MVS2 RD09MUP2 RD12MVP1 RD12MVS1 Ta=25 C : Gate Protection Diode Structure Max.ratings VDSS [V] 25 Pch [W] f [MHz] 5/ 5/ 5/ 941 1~5 4~52 5/ 5/ 5 5 V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number RD00HHS1 RD00HVS1 RD04HMS2 RD0HHF1 RD0HVF1 RD15HVF1 RD1HHF1 RD20HMF1 RDHVF1 RDHUF1 RDHUF2 RDHMF1 RDHUF1 RD0HHF1 RD0HVF1 RD0HUF2 RD100HHF1 Ta=25 C : Gate Protection Diode Structure Max.ratings VDSS [V] Pch [W] f [MHz] 5 1~5 80~40 890~9 5 5/ ~5 4~ / 1~5 4~5 Pin [W] / / / /0. 0./ Pin [W] / / Po (min) [W] /2 2/2 2/ / / Po (min) [W] typ. typ. 5typ. 15/ typ. 4typ. 0 0/ 84typ. 5typ. 100 nd (min) [%] / / / / / nd (min) [%] typ. 2typ. 5typ. / 2typ. typ. / 4typ. 4typ. Package Outline SOT-89 SOT-89 PMM PMM PMM Package Outline SOT-89 SOT-89 TO-220S TO-220S TO-220S TO-220S Ceramic (Small) Ceramic (Small) Ceramic (Small) HPM Ceramic (Large) Ceramic (Large) Ceramic (Large) Ceramic (Large) HPM Ceramic (Large)

SOT-89 TO-220S PMM HPM Ceramic (Small) Ceramic (Large) Silicon RF Devices Naming System HIGH

(W) Operation Voltage (V) Symbol Voltage M V N 9.

Range H MHz V 5MHz U MHz M 800MHz Outline Symbol S F P Segment Mold Flange Power Mold Mini

5 SOT-89 TO-220S PMM HPM Ceramic (Small) Ceramic (Large) Silicon RF Devices Naming System HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 0 M V S 1 Si MOS FET (Discrete) Output Power (W) Operation Voltage (V) Symbol Voltage M V N 9.V H V HIGH OUTPUT POWER Si MOS FET MODULE RA 0 M 42 M Frequency Range (MHz) Symbol Frequency Range H MHz V 5MHz U MHz M 800MHz Outline Symbol S F P Segment Mold Flange Power Mold Mini Serial Number Module Operation Voltage (V) Frequency Range (MHz) Frequency Unit Output Power (W) Symbol M N H Voltage V 9.V V Symbol (Example) 42 1 Frequency Range (Example) 4~ MHz 1~ 5MHz Symbol M G Unit MHz GHz Note: Type number show the outline of products. For detail specification, Please confirm a formal specification. 4

Ta=25 C Type Number RA01L89MA RA01L9595M RA02M808MD RA0MMD RA0M4MD RA0M4MD

RA0M4MSA RA0M42M RA0M42MSA Type Number Max.ratings Max.

max 928 954 89 0 4 40 80 941 88 5 5 20 0 4 40 40 max 0 40 5 H11S H54.. 9. 9. 9. 9. Pin [W] 0.

6 PRODUCT LIST.V/V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C *: When Po=2.5W **: When Po=.W 9.V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE RA0NM RA0N4M RA0N42M RA08N1M Ta=25 C Type Number RA01L89MA RA01L9595M RA02M808MD RA0MMD RA0M4MD RA0M4MD RA0M808M RA0M8894M RA0M08M RA0M1M RA0M1MSA RA0M212M RA0MM RA0M84M RA0M4M RA0M4MSA RA0M42M RA0M42MSA Type Number Max.ratings Max.ratings f [MHz] min f [MHz] min max max H11S H Pin [W] Pin [W] Po (min) [W] Po (min) [W] nd (min) [%] 8 * 4** 4** 4** 2 2 nd (min) [%] Package Outline H58 H58 H54 H54 H54 H54 H4M H4M H4M Package Outline H4M H5 H58 5

7 V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C RA0M9595M RA05H89M RA05H9595M RA0H8285M RA0H08M RA0HM RA0H4M RA0H42M RA08H1M RA08H84MD RA08H4MD RA1H1M RA1HM RA1H4M RA1H42M RA1H8891MA RA1H8891MB RA20H808M RA20H8994M RAH08M RAH1M RAH1M1 RAH21M RAH212M RAHM RAH4M RAH4M1 RAH42M RAH52M1 RAH151M1 RAH151M RAHMR RAH4M RAH42M RAH8M1 RAH8994M1 RAHM RAH84M RAH4M RAH42M RAH1M RAH1M1A RAH84M1 RAH4M1 RAH42M m 0.m (490-) (4-490) (490-) 4 (4-490) H11S H11S H11S (5-pins) (5-pins) H11S H5 H2RS Type Number f [MHz] min max Max.ratings Pin [W] Po (min) [W] nd (min) [%] Package Outline All Products Here Are RoHS Compliant

APPLICATION VHF~800MHZ BAND V OPERATION RECOMMENDED LINE UP 5mW mw mw RD00HVS1 RD01MUS2 RD01MUS2 RD02MUS1B RD0MUS2B RD0MUS2B 2W @1 5MHz W @1 5MHz 5W @80 80MHz 5mW mw VHF~UHF BAND V OPERATION

8 APPLICATION VHF~800MHZ BAND V OPERATION RECOMMENDED LINE UP 5mW mw mw RD00HVS1 RD01MUS2 RD01MUS2 RD02MUS1B RD0MUS2B RD0MUS2B 5MHz 5MHz 80MHz 5mW mw VHF~UHF BAND V OPERATION RECOMMENDED LINE UP RD15HVF1 RD0HVF1 0.W 5MHz RD04HMS2 RD0HUF2 0.2W 5MHz 4 MHz W RD00HVS1 RD01MUS2 RD15HVF1 RD04HMS2 RD02MUS1B RD0MUS2B RDHUF1 RDHUF2 MHz MHz MHz 0.2W 5MHz 4 MHz

PACKAGE OUTLINE SOT-89 Gate Source Drain TO-220S Gate Source Drain 2.5±0.1 0.8MIN 0.4±0.0.0±0.15 1.5±0.1 Drain Source 4.4±0.1 1.±0.1 ø1.0 4.9±0.15 INDEX MARK (Gate) Gate Ceramic (Small) ±0.5 0.5±0.0.0 0.

9 PACKAGE OUTLINE SOT-89 Gate Source Drain TO-220S Gate Source Drain 2.5± MIN 0.4±0.0.0± ±0.1 Drain Source 4.4±0.1 1.±0.1 ø ±0.15 INDEX MARK (Gate) Gate Ceramic (Small) ± ± ± ± 2.8±0. 1.5± ± ±0..± MAX 0.4± ± ± (0.25) / Drain Source.±0. 1.5±0.1 4.±.± 0.8± 4-C1 14.0±0.4 ø.2± ±0..0±0.4* Gate 5.1±0.5.9±0. 2.0± (0.25) (0.22).5± (0.22) 12.±0..2± MIN PMM (.) INDEX MARK [Gate] 0.±0.1 9± MAX 5deg 8.0± ± MAX 1.2±0.4.1±0. Drain [output] Source [GND] Ceramic (Large) 24.0±0. (4.5) TOP VIEW SIDE VIEW.2±0.2 DETAIL A 1.8± ± Standoff=max 25.0±0..0± ±0. 5.0± ±0.25.± / ±0.5 SIDE VIEW DETAIL A 1.± / 0.15 Gate [input] Source 5.± ± ±0.2 Drain Source 4 C2 10.0±0. ø.2±0.15.±0.2.0±0.2 2.±0.2 BOTTOM VIEW Gate ± ±0. * 0.5±0.2 * The height of terminals shows root. * The height of terminals shows root. 8

10 PACKAGE OUTLINE H4M RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout).0±0.2 (1.) 4.±0.5 2.± ±0.2 2-R1.5± ±0.1 H11S.0±0. 5± ± ± ±1 14± / ± RF Input(Pin) Gate Voltage(VGG) 2.0± / ±.± ± ± ±0.5 (5.4) RF Input(Pin) Gate Voltage(VGG) 8.±1 12.0±1 1.5±1 4.5±1.5±1 21.±1 4.±1 51.±1 (49.5) Drain Voltage(VDD) RF Output(Pout).0±0.5.0± ±0.5 2-R2±0.5 (.4) Drain Voltage(VDD) RF Output(Pout).5±1 5.5±0.5.4±1 2 R1.±0.2 ø0.± ±0.1 (1.5) ± ±.5±0.2 9.±0.2 5.MAX 2.±0. 4.0±0. ø0.± ±0..5±0.5 11±0.5 ±1 (.4) 0.±0.1.0±0.5 (9.8) RF Ground(Fin) ±0.2.9±0.2 1.±0.5 RF Ground(Fin) RF Ground(Fin) H2RS 2 R2± ±1 15±1 (1.) (4.4) ±1 2.± ±1.1+0./ / 0.0±0. 5± ± ± ±1.1±1 2.0± / ± RF Input(Pin) Gate Voltage(VGG) RF Input(Pin) Gate Voltage(VGG) RF Input(Pin) Gate Voltage(VGG) ±1 ±1 10.5±1.0±0.2 2.± ±0.2 1.±1 18.8±1 2.9±1 (1) 22.5±1 49.5±1 54.0±1 ±1 ±1 49.8±1 Drain Voltage(VDD) RF Output(Pout) Drain Voltage(VDD) RF Output(Pout) Drain Voltage(VDD) RF Output(Pout) 44±1 5±1.0±0.5.0± ±0.5 2 R2±0.5 (.4).0± ±0.2.0±0.2.5±0.2 (5.4) 2 R ± ±0. ø0.± ±0..5±0.5.0±0.5 (9.8) (.2) 0.±0.2 (2.).0±0.2 RF Ground(Fin) RF Ground(Fin) 4±0.5.±0.5.4±0.2 ø0.±0.15 RF Ground(Fin) 18±1 (9.9) 9

11 H54 H58 9.1± ±0.1 ±1 2.±0.4 (1.) (4.4) Area A RF Input(Pin) Final Stage Gate Voltage(VGG2) RF Output(Pout) First Stage Gate Voltage(VGG1) Drain Voltage(VDD) RF Ground(Fin) ±0.15 ±0.2 2.± ±0.2.1±1 10.4±1 1.±1 18.8±1 2.9±1 (5.4) (1) RF Input(Pin) Gate Voltage(VGG) INDEXMARK (Pin) 0.5± ø0.±0.15 (1.5) 1.5±0.2 ±0.2 10±0.2.5±0.2 2 R1.5±0.1 (5.4) H54:Handy 5Pin Drain Voltage(VDD) RF Output(Pout) 8.± ±0.1 4.± ±0.1 ±0.2.4±0.2 RF Ground(Fin) 4.2±0.1 5.±0.1.8±0.1 H5 Precautions for the use of MITSUBISHI silicon RF power amplifier devices 01.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 0.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 04.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than deg/c under standard conditions, and less than 90deg/C under extreme conditions. 05.RA series products are designed to operate into a nominal load impedance of ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and smoking of other parts including the substrate in the module. 0.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 0.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 08.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it s original form. 09.For additional Safety first in your circuit design and notes regarding the materials, please refer the last page of this manual. 10.Please refer to the additional precautions in the formal specification sheet ± ± ± ±0.8.8±0.8 RF Input(Pin) Gate Voltage(VGG) R1.5±0. Drain Voltage(VDD) RF Output(Pout) 10±1 0.±0.0 (2.) (.) RF Ground(Fin) (.) (2.) MITSUBISHI ELECTRIC SEMICONDUCTORS GLOBAL WEB SITE 10

12 SILICON RF DEVICES Please see here in detail. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. HEAD OFFICE: TOKYO BLDG., 2--, MARUNOUCHI, CHIYODA-KU, TOKYO , JAPAN H-CV24-H KI-1009 Printed in Japan (TOT) 2010 MITSUBISHI ELECTRIC CORPORATION New publication effective Sep Specifications subject to change without notice.

SILICON RF DEVICES. Silicon RF Devices

SILICON RF DEVICES. Silicon RF Devices SILICON RF DEVICES Silicon RF Devices Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,