Electronic supporting information

Transcription

1 Electronic supporting information A method to prepare highly oriented MAPbI3 crystallites for high efficiency perovskite solar cell to achieve 86% Fill Factor Chien-Hung Chiang a,b, Chun-Guey Wu a,b, * a Research Center for New Generation Light Driven Photovoltaic modules, National Central University. b Department of Chemistry, National Central University, Jhong-Li, 321, Taiwan, ROC.

2 Table S1: The photovoltaic parameters of the inverted MAPbI3 mini module scan at different directions and scan delay times. Scan Delay Isc Jsc Voc FF PCE direction time (ma) (ma/cm 2 ) (V) (%) Jsc to Voc Voc to Jsc Jsc to Voc 1 ms Jsc to Voc 2 ms Jsc to Voc ms Table S2: The photovoltaic parameters of the inverted cell based on on FA.8MA.Pb (I.8Br.)3 films prepared with five different methods. Preparation Jsc Voc FF PCE method (ma/cm 2 ) (V) (%) SSC CGB ASE ASE/GB ASE/GB-1.%

3 Figure S1a: 2D-XRD diffraction patterns of MAPbI3 films prepared with four different methods. Intensity (a.u.) SSC ASE CGB ASE/GB (degree) Figure S1b: The Pole figures constructed from (S1a) with respect to the polar angle.

4 Current Density (ma/cm 2 ) SSC ASE CGB ASE/GB Figure S2: I-V curves of the inverted PSCs based on MAPbI3 films prepared with four different methods. Current Density (ma/cm 2 ) M 1.2 M 1.3 M 1.4 M Figure S3: I-V curves of the inverted PSCs based on ASE/GB films prepared from different concentrations of the perovskite precursor solutions.

5 Figure S4: SEM cross-section images of AES/GB-1.% film (a) at high magnification, (b) at low magnification.

6 Figure S: XRD patterns of AES/GB-1.3 films before and after treating with CB containing various amount of H2O (insert: the (2) diffraction peaks). Absorbance (a) ASE/GB-1.3 ASE/GB-.1% ASE/GB-1.% ASE/GB-1% Intensity ASE/GB-1.3 ASE/GB-.1% ASE/GB-1.% ASE/GB-1% Wavelength (nm) Wavelength (nm) Figure S6: UV/Vis absorption spectra (a) and PL spectra (b) of AES/GB-1.3 films on PEDOT:PSS before and after treating with CB containing various amount of H2O.

7 (a) before post treatment after post treatment (b) before post treatment after post treatment Intensity (a.u.) C1s Intensity (a.u.) N1s Binding Energy (ev) Binding Energy (ev) (c) before post treatment after post treatment (d) before post treatment after post treatment Intensity (a.u.) Pb4f 7 Intensity (a.u.) I3d Binding Energy (ev) Binding Energy (ev) Figure S7: The XPS spectra of ASE/GB-1.3 film before and after H2O/CB post treatment. (a) C, (b) N, (c) Pb and (d) I. Current Density (ma/cm 2 ) ASE/GB-1.3 ASE/GB-.1% ASE/GB-1.% ASE/GB-1% ASE/GB-1.%-Dark Figure S8: I-V curves of the inverted PSCs based of AES/GB-1.3 films before and after treating with CB containing various amount of H2O.

8 EQE (%) (a) EQE 2 Integrated Current Density Wavelength (nm) Integrated Photocurrent Density (ma/cm 2 ) Current Density (ma/cm 2 ) (b) Scan from negtive to positive bias Scan from positive to negative bias Current Density (ma/cm 2 ) (c) Figure S9: The IPCE curve (a), I-V curves scanned at different directions (b), and at various delay times (13 points on the I-V curve) (c) of the highest efficiency cell. ms 1 ms 2 ms ms

9 Number of cells Figure S1: The histograms of the PCE based on 6 cells using AES/GB-1.% film as an absorber. PCE (%) Normalized PL Intensity 1.2 SSC ASE/GB ASE ASE/GB-1% 1. CGB Time / ns Figure S11: TRPL spectra of the perovskite films on ITO

10 Current Density (A/cm 2 ) E-3 1E-4 1E- SSC ASE CGB ASE/GB ASE/GB-1% Ohmic region slope = 1 1E SCLC region slope = 2 TFL region slope > 3 Figure S12: top: the architecture and components of the hole-only device; bottom: the I-V curves of the hole-only devices based on perovskite films prpeared with various methods.