Improving Organic Solar Cells
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1 Improving Organic Solar Cells Mike McGehee, Alex Mayer, Jack Parmer, Mike Rowell, Mark Topinka, George Burkhardt Stanford University
2 Goals 15 % efficiency $30/m 2 20 year lifetime i Cover 1 % of the country
3 Nanostructured Cells e - E h + Excitons are split at interfaces. Separating the electrons and dholes enables the use of low quality materials January 2005 Materials Research Society Bulletin
4 Flexible Transparent Conductors For Organic Solar Cells Low-cost solar cell production ITO, ZTO, other TCOs (Indium: scarce, limited resource) Relatively brittle Vacuum & heat processing Delamination, chemical compatibility Relatively costly vs. Solar Cell Transparent Conductor Goals: High sheet conductivity (Rsqr<10ohm) High transparency (90%) Cheaply processible : organic-(lowt)-compatible Flexible, good adhesion non-vacuum process compatible Abundant, non-toxic materials
5 Carbon Nanotube Film Fabrication disperse tubes and sonicate pump discard excess solution alumina filter lift off nanotubes with PDMS stamp Press to PET film... et Voila! PDMS stamp PDMS: Esurface ~20mJ/m 2 PET film PET Esurface ~45mJ/m 2 PET film L.Hu et al Nanoletters 4, 2513 (2004), E.Bekyarova, et al, JACS 127 (2005), Z. Wu, et al.science 305, 1273 (2004)
6 Fabrication of Solar Cells Spin on PEDOT/PSS + anneal CNT-film PET substrate ~30nm PEDOT O + CNT-film C PET substrate 95nm Spin on P3HT Evaporate Al, anneal Al 100nm P3HT/PCBM PEDOT + CNT-film PET substrate 100nm P3HT/PCBM PEDOT + CNT-film PET substrate M.Rowell et al, APL 88 (2006)
7 Device Results: Flexibility & Adhesion CNT-Film on PET Devices Bending cells to 5mm curvature had no effect Bending cells to 1mm reduced efficiency by 20%, but not irreparably. ITO on PET Devices Bending cells to 5mm destroyed cells irreversibly.
8 Device results: Cell Performance CNT-TC Solar cell Schematic 2 Solar cell I-V Nanotube Film PEDOT:PSS Transparent Electrode P3HT:PCBM Light Absorber Sunlight V out Current (m ma/cm 2 ) CNT ITO Back Electrode Voltage (V) Efficiency j sc V oc Fill Factor CNT cell 2.5% 7.8 ma/cm mv 0.42 ITO cell 3.0% 8.0 ma/cm mv 0.52
9 Estimate of minimum R sh for 95% Transparent CNT-Film ρ = 4KΩ/μm 3 layers of CNTs : 95% transparency d L L parallel nanotubes with diameter, d For 5-5 tubes d = 0.7nm R 1-sheet = 28Ω/ 2.8 R sh (T=95%) = R 1-sheet / 3 sheets ITO resistnace per square 95% transparency R = 0.9Ω/ Films used in cell: 200Ω/, 85% transmission
10 Studying CNT-Films with Scanned Probe Microscopy Techniques Using EFM to Study CNT-Films V ds Top View of CNT-Film Test Device Apply voltage (and current) across thin CNT film. Side View of Device And Scanned Probe Microscope Setup V tip Δφ = d 2 C/dz 2 (V tip -V samp ) 2 Use Electric Force Microscopy (EFM) - potentiometry to image voltage drops across film bottlenecks in CNT-film performance can be identified by studying details of where potential drops (corresponds to high resistance points in the network)
11 Widely Varying Actual Sheet Resistances SUGGESTIVE? 2V 40μ μm ΔV 65KΩ 630KΩ 0V
12 Current 60uA Voltage 1V (Voltage Undefined) 0uA 0V
13 Current 60uA Voltage 1V (Voltage Undefined) 0uA 0V
14 Current 60uA Voltage 1V (Voltage Undefined) 0uA 0V
15 Current 60uA Voltage 1V 0uA 0V
16 Current 60uA Voltage 1V 0uA 0V
17 Current 60uA Voltage 1V 0uA 0V
18 Current 60uA Voltage 1V 0uA 0V
19 Current 60uA Voltage 1V 0uA 0V
20 Current 60uA Voltage 1V 0uA 0V
21 Current 60uA Voltage 1V 0uA 0V
22 Voltage Current Voltage Current 20% increase in tube density : 15 x increase in conductivity,
23 Extracting Quantitaive Information from EFM Plots 1V 0V 1V Intertube jumps: Rtubetube Defect Resistance: Rdefects Intratube jumps: Rbend Slopes: Rper.length ~ identify metallic vs. semiconducting tubes using backgate ~ measure real-world R.tube.tube, R.per.length dependence on diameter, tube-types,
24 P3HT -3.1 En nergy -5 Exciton ITO/PEDOT Al
25 P3HT (II) 4.3% 200nm thick 1:1 P3HT:PCBM
26 Opportunities for Improvement Lower the bandgap Reduce the LUMO offset Increase the internal quantum efficiency i (IQE) above 80%
27 Bao Polymers TIPSEDTAF NM2-8-P N N S S S C 12 H 25 C 12 H 25 n HOMO = LUMO = Eg = 2.02 HOMO = LUMO = Eg = 1.62 Acceptor + Donor Acceptor Donor Benzothiaziazole Thienopyrazine, etc. Fluorene Thiophene, etc. Low band gap polymer
28 Absorption TIPSEDTAF NM2-8-P N N S S S C 12 H 25 C 12 H 25 n 0.2 Abso orbance 0.5 Abs sorbance λ (nm) λ (nm)
29 Excitons are Quenched TIPSEDTAF NM2-8-P N N S S S C 12 H 25 C 12 H 25 n PL Quenching of TIPSEDTAF Spun from ODCB 5000 Quenching of NM2-8-P Spun from ODCB A.U TIPSEDTAF Neat Film 1:1 TIPSEDTAF: PCBM C70 A.U Neat 1:1 NM2-8-P:PCBM Wavelength (nm) W avelength (nm)
30 Optimized Device Performance TIPSEDTAF NM2-8-P N N S S S C 12 H 25 C 12 H 25 n 5 1:1 TIPSEDTAF:PCBM C60 Spun from Toluene (TIPSEDTAF) and ODCB (PCBM) 15 1:4 NM2-8-P:PCBM C60 Spun from ODCB 2 ) rrent Density (ma/cm 2 Cu 0 V OC = 495 mv J sc = 4.05 ma/cm 2 FF = 0.38 Eff. = 0.76% Dark Light )10 Cu urrent Density (J/cm Dark Light V = V OC J SC = 5.35 ma/cm 2 FF = 0.50 Eff. = 1.38% Voltage (V) Voltage (V)
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