Title. BST34 and BST35 series CMOS power amplifiers

Transcription

1 Title BST34 and BST35 series CMOS power amplifiers 1

2 Agenda Company background CMOS PAs: An extreme challenge Announcing the BST34 and BST35 CMOS PA product lines BST34 series Pin- compafble drop- in replacement for exisfng PAs Highest reliability Largest supply chain BST35 series Summary Fewest dropped calls Fastest data rates 2dB higher TRP (total radiated power) PA market data 2

3 Black Sand company background Company founded June 2007 Series A: $8.2M Series B: August $10M AusFn Ventures & Northbridge VP Team 10+ years of CMOS PA design experience Deep experience in RF CMOS design Consultants, advisors and board members Sodini (MIT), Larson (UCSD), Wilska (Nokia) Industry firsts World s first 2G CMOS PA (Silicon Labs team, now at Black Sand) World s first 3G CMOS PA (Black Sand prototype in 2009) World s largest CMOS PA patent porcolio Over 70 patents and applicafons 3

4 CMOS PAs: an extreme challenge Benefits of CMOS Mixed- signal digital and analog architecture Higher reliability Superior supply chain and cost- structure Material challenge Lower mobility, lower voltage transistors Use digital to bring CMOS smarts Design Challenge No exisfng market knowledge base for building CMOS PAs Standard mixed- signal design methodology is opfmized for small- signal analysis Large- signal effects and interacfons dominate PA designs Even small magnefc or electric couplings have significant impact on performance metrics ExisFng CAD tools do not provide accurate predicfons of device funcfonality Including the small parasifcs that have large impact on PA performance 4

5 Announcing two SmartPA product lines BST 34 series Pin- compafble drop- in replacement for exisfng GaAs PAs BST35 series High performance TrueDelivered power detector BST34 and BST35 series common CMOS advantage SmartPA technology Digital bias control Digital calibrafon of internal offsets Internal sensors to opfmize real- world performance Highest reliability Unlike GaAs, CMOS is not subject to thermal runaway Mixed- signal (analog & digital signals) circuits protect sensifve transistors CMOS supply chain Massive supply chain larger than all GaAs compeftors combined GaAs supply shortages have occurred in the past and will occur again in the future CMOS uses standard silicon, not dependent on rare- earth metals for producfon 5

6 BST34 series power amplifiers Pin- compafble with exisfng GaAs PAs Drop- in replacement (3x3mm 10pin package) Integrated direcfonal coupler Daisy- chain compafble RF performance meets/exceeds GaAs PAs Compliant with 3GPP WCDMA, HSDPA, HSUPA 28dBm output power in high power mode (HPM) 19dBm output power in medium power mode (MPM) 40% efficiency Three products to cover 3G high bands Product Band Band Name Frequency Samples Production BST3401 Band-1 UMTS MHz Feb Q BST3402 Band-2 PCS MHz Q Q BST3404 Band-4 AWS MHz Band-9 Japan MHz Band-10 Latin America MHz Q Q

7 BST35 series power amplifiers Same RF performance as BST34 series meets/ exceeds GaAs High performance TrueDelivered TM power detector Patented technology allows mobile device to safely increase TRP (Total Radiated Power) Precision detector mifgates tradeoff between TRP, ID (industrial design), and SAR (specific absorpfon rate) safety concerns Up to 2dB higher TRP in real- world Fewer dropped calls Higher data rates Three products to cover 3G high bands Product Band Band Name Frequency Samples Production BST3501 Band-1 UMTS MHz Feb Q BST3502 Band-2 PCS MHz Q Q Band-4 AWS MHz BST3504 Band-9 Japan MHz Q Q Band-10 Latin America MHz 7

8 TrueDelivered power detector Hand-head usage example Texting/data usage example USB model near metal table usage example BST35 series improves total radiated power (TRP) Real- world mobile device usage has antenna interference Interference is measured using VSWR (voltage standing wave rafo) Typical real- world VSWR is 2.5:1, max is 4:1 Comparing BST3501 vs. GaAs PA at 2.5:1 VSWR (graph on next page) 1dB improvement in TRP compared to GaAs PA with ideal coupler & power detector Up to 3dB improvement in TRP compared to GaAs PA with integrated coupler GaAs PA with integrated coupler may also violate SAR safety requirements 8

9 TrueDelivered power detector SAR violafons P DELIVERED (dbm) 3dB 1dB Black Sand BST3501 GaAs PA, ideal coupler, ideal power detector GaAs PA, integrated coupler, ideal power detector 9 VSWR Phase

10 Product line for 2011 BST34 Series Sampling February 2100 Band- 1 ( MHz) integrated coupler Sampling Q2 PCS Band- 2 ( MHz) integrated coupler Sampling Q2 AWS Band- 4 ( MHz) Japan Band- 9 ( MHz) L. America Band- 10 ( MHz) integrated coupler BST35 Series Sampling February 2100 Band- 1 ( MHz) TrueDelivered TM power detector Sampling Q2 PCS Band- 2 ( MHz) TrueDelivered TM power detector Sampling Q2 AWS Band- 4 ( MHz) Japan Band- 9 ( MHz) L. America Band- 10 ( MHz) TrueDelivered TM power detector 10

11 Black Sand target market 3G mobile devices Sources: Oppenheimer, Needham ,000 2,500 2,000 Units (Millions) 1,500 1, G Device Shipments 3G Device (Shipments*Bands) 3G growth drivers Smartphones & data cards China 3G Tablets, ebooks, mobile consumer Large available market 900M 3G devices in 2014 Growing # PAs/handset 50% devices in 2014 with >4 3G bands 11

12 Black Sand SmartPA TM summary BST 34 series Pin- compafble, drop- in replacement Highest reliability CMOS supply chain BST 35 series TrueDelivered TM power detect increases mobile device TRP by 2dB Fewer dropped calls Higher real- world data rates Smartphone designers can beter balance ID (industrial design) TRP (total radiated power) SAR (specific absorpfon rate) safety 12

13 Product highlights Pin-compatible architecture - 3x3mm 10 pin - BST34 series includes coupler - 50 ohm input and output - Drop-in replacement Voltage and temperature protection - 100:1 VSWR rating - Robust to open and short at output - Eliminates the need for an isolator TrueDelivered TM Power Detector - Accurate to less than +/-0.5dB - Improves mobile device TRP by up to 2dB - Mitigates tradeoff between - Industrial design (ID) - TRP - SAR - Reduces dropped calls - Increases real world data rates High Performance CMOS PA Core - 28dBm output power - 40% Efficiency - Compliant with 3GPP WCDMA, HSDPA, HSUPA Digital architecture - Precise biasing and internal controls boost real-world performance 13

14 Appendix A: 3G cellular handset RF block diagram RF front-end Cell /. GSM 900 DCS / PCS IMT PCS SP9T Cell RF transceiver ( XCVR ) IC Cellular baseband ( BB ) IC PCS Cell DCS GSM 900-2G PA - 3G PA 14

15 Appendix B: Comparing delivered power vs. forward power Forward power detecfon Implemented in most phones today Mismatch error not accounted for DirecFvity error in lower cost couplers Results in lower TRP and higher SAR GaAs PA P FORWARD P REVERSE P DELIVERED True delivered power detector Implemented in BST35xx products No mismatch loss or direcfvity error Results in higher handset TRP Eliminates SAR/TRP compromise P FORWARD Standard Power DetecFon (3:1 VSWR) BST dB DirecFvity 20dB DirecFvity 50 ohm 3:1 VSWR Coupler FVT +/ db +/ db - - Power detector FVT +/ db +/ db +/ db +/- 0.5 db DirecFvity Error +/- 1.4 db +/- 0.4 db - - Mismatch error db db - - Total +1.9 / db +0.9 / db +/ db +/- 0.5 db 15