International Microwave Symposium June 2013

Transcription

1 International Microwave Symposium June

2 1500+ customers 190+ products 50 countries 2

3 UltraCMOS Peregrine Semiconductor Unveils STeP8 UltraCMOS Process Technology

4 Leadership Position in SOI Technology Most Widely Used Semiconductor Technology CMOS Scalable Lowest Power and Cost Fabless Model + Near-Perfect Insulating Substrate SAPPHIRE Proven SOI Technology Outstanding RF Properties Mature Supply Chain Industry-Leading RF Semiconductor Technology Combining the Best of the Best Unique Position in Industry Better Performance Enables Integration 4

5 Announcing Semiconductor Technology Process 8 Ron CGD CDS CGS ON OFF STeP8 36% Improvement 5

6 6 Exceeding Industry Performance Demands IIP3 (dbm) Mobile RFFE Device Linearity Requirement vs. Peregrine Product/Technology Introduction 2G 3G 4G LTE STeP3 PE42672 STeP2 PE4261 STeP5 PE42682 STeP8 5G 4G LTE 3G 2G

7 Deliver: Industry-Leading Performance and Integration 7 Competitive Analysis GaAs UltraCMOS STeP2 STeP5 STeP % Smaller* Single CSP IC vs. Multi-Chip Design Q - 3Q Q - 3Q 2012 UltraCMOS Switch Eliminates Units Shipped (Millions) 29 Wire Bonds Custom Multi-Chip Module External Electrostatic Discharge (ESD) Protection Circuitry UltraCMOS STeP5 Volume Shipments * STeP5 Switch compared to GaAs Switch 7

8 Product Overview

9 Complementary RF Products and End Markets Mobile Wireless Devices Wireless Infrastructure Broadband Test & Measurement Industrial Aerospace & Defense Product Families RF Switches Digital Step Attenuators Synthesizers Mixers / Upconverters Prescalers VGAs DTCs DC-DC Converters Phase Shifter Power Amplifiers Product in Production Product Sampling or in Development 9

10 Performance Focus High Quality High Power High Isolation Ultra-low Phase Noise High Frequency & Power High Frequency & Power 10

11 PE khz 13.0 GHz SPDT Test & Measurement/ATE Switches 16-lead 3x3 mm QFN Upgraded PE42552 with improved power handling of +36 dbm. Eliminate need to protect switch from overpower conditions. Excellent broadband frequency support and low frequency performance Excellent linearity of 115 dbm 8.0 GHz. Critical for filter bank switching applications Optional V SS bypass to eliminate spurs in RF signal chain Pin compatible with PE42552 SPDT RF Switch 50Ω absorptive 9 khz 13.0 GHz HaRP technology enhanced Low Insertion Loss GHz GHz GHz High Isolation GHz GHz GHz Power Handling 36 dbm ( 1 MHz) High Linearity IIP3 of GHz IIP2 of GHz ESD Performance 3kV HBM on all pins 11

12 PE Bit DSA 9 KHz 8 GHz DSA for Test & Measurement/ATE 50Ω 7-bit DSA 9 khz - 8 GHz HaRP technology enhanced Attenuation options: 0.25 db steps to db 0.50 db steps to db 1.00 db steps to db 32-lead 5x5 mm QFN High Power Handling Pin of +28 dbm Supports up to frequency of 8 GHz High linearity of +61 dbm IIP3 Excellent attenuation accuracy Monotonicity 0.25 db steps up to 6 GHz 0.5 db steps up to 7 GHz 1.0 db steps up to 8 GHz Optional V SS bypass to eliminate spurs High Linearity Flexible programming interfaces: serial or parallel (direct and latched). Serial Addressable Pin Compatible with PE43703 IIP3 of 61 dbm ESD performance 1000V HBM 100V MM 12

13 PE42851: 0.1-1GHz, High Power SP5T Reflective Switch UltraCMOS technology enables High Power re-configurable SP5T/SP3T Switch High Power Switch SP5T RF Switch 100 MHz 1.0 GHz Reflective Dual mode operation: SP3T & SP5T High Power Handling 40 dbm (VSWR 8:1) 32-lead 5x5 mm QFN Low Insertion Loss GHz High Isolation Fast switching version of PE42851 High power handling of 17W Excellent 2fo & 3fo harmonic performance of -90 dbc Low insertion loss of GHz Flexibility to configure to a SP3T or SP5T 30 1GHz Stellar Linearity 2 nd & 3 rd harmonic (VSWR 8:1) of - 82 dbc Return Loss 1GHz Excellent ESD Performance 2kV HBM on all pins

14 DuNE Digital Tunable Capacitor (DTC) Monolithic variable capacitor controlled by a digital interface. Linear and monotonic tuning curve. Minimal C and Q temperature variance. 14

15 DTC Application #1 Passive vs. Active Antenna 15 Passive Antenna DTC Active Tuned GSM Quadband, UMTS850(B5), UMTS1900(B2) and LTE700(B17) GSM900(B8), GSM1800, GSM1900, UMTS800(B6), UMTS2100(B1), UMTS 1700/1800(B9) 15

16 DTC Application #1 Passive vs. Active Antenna 16 Passive Antenna Version Active Antenna Version Volume = 1.4cm 3 Volume = 0.7cm 3 16

17 Passive vs. Active GSM850 Band 5 Total Isotropic Sensitivity(TIS) GSM850 Band 5 Total Isotropic Sensitivity -102 GSM Spec GSM TIS(dBm) at < 1% BER Active Passive Frequency(MHz) 17

18 PE64906/7/8/9: 0.1-3GHz, High Performance DTC s DuNE TM DTC s extend industry leading RF tuning IC portfolio lead 2x2 mm QFN Monolithic solution with 3-wire SPI digital interface Wide capacitance tuning range from 0.6pF to 7.7pF High power handling of 34 dbm Superior linearity IIP3 = 65dBm High ESD rating of 2KV on all pins

19 PE Tuner with Bypass Functional Overview DuNE -enhanced MIPI RFFE tuner with two DTC and three bypass switches Monolithically integrated tuner provides optimal smith chart coverage from 700 to 2700 MHz in 3x3 16-L QFN package Option to include L1/L2 inductors at BP1/BP2 give designers flexibility to achieve optimal performance when antenna is co-designed with tuner Low loss bypass mode available when tuning not required All decoding and biasing is integrated on-chip and no external bypassing or filtering components are required Supports high RF power handling and ruggedness, while meeting challenging harmonic and linearity requirements enabled by Peregrine s HaRP technology Pinout (Top View) Functional Block Diagram VDD GND BP2 RF SDA 1 12 RF2 SCLK VIO 2 3 GND Paddle RF1 RF1 ADDR 4 9 GND DGND GND BP1 GND 19

20 Improved Bandwidth and Increased Power Delivered to the Antenna Antenna Impedance at 800 MHz 0-1 Transducer Gain MHz 0-1 Relative Antenna Efficiency (with and without tuner) Ant only With Tuner Ω Power Delivered [db] MHz + 4.5dB Antenna impedance should be inside this contour for optimal performance Frequency [MHz] Antenna BW improvement with Tuner (LB) 20

21 Thank you. NASDAQ: PSMI psemi.com 21