DATASHEET TBPF
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1 FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS DATASHEET TBPF Figure 1. tbpf front side 14.0 x 15.0 mm Digitally Tunable Bandpass Filter Solderable Module The tbpf is a lumped-element tunable preselection bandpass that consists of three coupled resonators. The bandpass employs a digitally tunable capacitor and allows for tuning the center frequency with a resolution of 5 bits. The tbpf covers the center frequency range from 630 MHz to1400 MHz, including the UHF-band within its LTE-800 frequency band, E-GSM, P-GSM, GSM, GSM710, GSM750, T-GSM, R-GSM, a fractional 1dB bandwidth of %, an insertion loss of 5.1 db ± 0.8 db within the tuning range, and a stop-band attenuation of 53 db. Fraunhofer Institute for Integrated Circuits IIS Am Wolfsmantel Erlangen, Germany Contact communicationsystems@iis.fraunhofer.de Fraunhofer IIS Datasheet tbpf v
2 The filter measures mm by mm and consists of a 4-layer FR-4 substrate with 3.62 mm height. A 3-wire SPI enables the digital control interface to a software defined receiver or transmitter platform. Pin # Name Description 1 GND Ground 2 GND Ground 3 RF_IN RF Input 50Ω 4 MOSI (SDA) SPI Data In 5 GND Ground 6 CS (SEN) SPI Chip Select 7 SCLK (SCL) SPI Clock 8 GND Ground 9 VCC Supply Voltage 10 GND Ground 11 GND Ground 12 RF_OUT RF Output 50Ω Figure 2. Pin Configuration TOP View Table 1. Pin Descriptions Typical Application The tbpf is ideal for RF harmonic filtering applications including: Multi-band receiver/transmitter Multi-standard transceiver Software defined radio (SDR) Cognitive radio Frequency monitoring Features Tunable center frequency: MHz Tuning range: 770 MHz Fractional 1dB-bandwidth: % Interface: 3-wire serial port interface (SPI) High linearity: OIP3 38 dbm Type: SMD solderable module Temperature range: -10 C to 50 C PCB: 4-Layer x mm PCB Electrostatic Discharge (ESD) Precautions When handling this tbpf device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Fraunhofer IIS Datasheet tbpf v
3 Electrical Specifications Parameter Conditions Min. Typ. Max. Units Analog performance Tunable center frequency (fc) range fc = 630 MHz 19.5 % Fractional 1 db fc = 1000 MHz 16.4 % fc = 1400 MHz 10.5 fc = 630 MHz 4.3 db Insertion loss (IL) in fc = 1000 MHz 4.5 fc = 1400 MHz 5.9 db Rejection at fc = 630 MHz, 31.8 db high-side (fsh) fsh = 1260 fc = 1400 MHz, 30.2 db fsh = 1800 MHz Rejection at fc = 630 MHz, 53 db low-side (fsl) fsl = 350 fc = 1400 MHz, 43 db fsl = 1000 MHz 1dB fc = 700 MHz dbm input (INP1dB) Output intercept point fc = 970 MHz dbm order in passband (OIP3) 1) Digital performance Switching time 2) 3) 12 µs Start-up time 2) 4) 100 µs Table 2. Electrical Specifications TA = +25 C, Vcc = 3.3V, Substrate: FR-4 Notes: 1. Measurements were done at an input power of pin = 0 dbm, 2-tone delta frequency f = 1 MHz 2. DC path to ground at RF input and output must be provided to achieve specified performance 3. Time between any two states 4. Time from VCC within specification to all performances within specification Parameter Min. Typ. Max. Units V CC supply voltage V I DD power supply current (V CC = 3.3V) µa I DD standby current (V CC = 3.3V) 75 µa V IH control voltage high V V IL control voltage low V RF input power (50Ω) dbm MHz T OP operating temperature range C Table 3. Operation Ratings Symbol Parameter Min. Max. Units V CC Power supply voltage V V I Voltage on any DC input V Table 4. Absolute Maximum Ratings Fraunhofer IIS Datasheet tbpf v
4 Magnitude db(s(2,1)) Forward Transmission Magnitude S Figure 3. S21 Magnitude evaluated from stage 01 to 32 in 4-steps freq, GHz 0 Reflexion Port 1 Magnitude S11 Figure 4. S11 Magnitude -10 db(s(1,1)) freq, GHz Fraunhofer IIS Datasheet tbpf v
5 0 Reflexion Port 2 Magnitude S22 Figure 5. S22 Magnitude -10 db(s(2,2)) freq, GHz Output Intercept Point 3rd Order Figure 6. Output IP3 at 970 MHz center frequency Fraunhofer IIS Datasheet tbpf v
6 Evaluation Board Figure 7. Evaluation Board Evaluation boards for the tbpf (see Figure 7) are available. For more information please refer to the user manual of EVM600S. Package Drawing Figure 8. Package Drawing All dimensions are given in mm. Dimensional and geometrical accuarcy of the package refers to DIN ISO 2768-m standard. Fraunhofer IIS Datasheet tbpf v
7 Footprint Recommendation Figure 9. Footprint Recommendation All dimensions are given in mm. Dimensional and geometrical accuarcy of the package refers to DIN ISO 2768-m standard. Part Number Package Body Material Lead Finish tbpf s RoHS-compliant chem. Ni-Au Table 5. Package Information Part Number Description tbpf-xxx-yyy-s tbpf = tunable bandpass filter xxx = minimum tunable center frequency yyy = maximum tunable center frequency s = solderable The information in this document is subject to change without notice. Fraunhofer IIS Datasheet tbpf v
DATASHEET TBPF
FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS DATASHEET TBPF-220-425 Figure 1. tbpf-220-425 front side 14.0 x 15.0 mm Sub 1GHz Digitally Tunable Bandpass Filter Solderable Module The tbpf-220-425 is
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.1211 45 Analog Phase Shifter,
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11 7 8 9 FEATURES Radio frequency (RF) range: 6 GHz to 1 GHz Local oscillator (LO) input frequency range: 6 GHz to 1 GHz Conversion loss: 8 db typical at 6 GHz to 1 GHz Image rejection: 23 dbc typical
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More informationData Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices
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More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
More informationFeatures. = +25 C, 50 Ohm system. DC - 10GHz DC - 14 Ghz DC - 10 GHz DC - 14 GHz Return Loss DC - 14 GHz 5 10 db
Typical Applications v2.717 Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-929SM The ADM-26-929SM is a broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 db typical
More informationOBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
More information= +25 C, With Vee = -5V & VCTL= 0/-5V
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More informationFeatures. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
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More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
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More information800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC
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