What happens, if VBIC fails in Quasisaturation? Joerg Berkner Principal Bipolar/BiCMOS Modeling Infineon Technologies ATV PTP PFM EDA
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1 What happens, if VBIC fails in Quasisaturation? Joerg Berkner Principal Bipolar/BiCMOS Modeling Infineon Technologies ATV PTP PFM EDA
2 Agenda Introduction Problem definition Ohmic or non-ohmic quasisaturation? Simulation experiment Extraction method for IBCI / IBEIP split Summary AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 2
3 Intro We observed the following problems using the quasisaturation (QS) parameters of the VBIC 1.2 compact model 1. There is no combination RCI / GAMM, which is sufficient to model both the Ib- and the Vb-driven output characteristic in QS 2. If we use RCI>0, ft shows a very sharp ft roll off, which does not fit to reality 3. This ft roll off and the appropriate TF increase affects the switching behavior 4. Using RCI>0 we observed a pole in CV simulations This presentation is focused on topic 1 The investigation was made under the following conditions: 1. Simulator: Cadence Virtuoso Spectre version isr15 16 Oct ICCAP: Oct AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 3
4 Problem definition Bad modeling of quasi saturation for Vb driven output characteristic IFX T2 Sufficient modeling of quasi saturation for Ib driven output characteristic IFX T2 Ic=f(Vce), Vbe=Par RCI=3838, GAMM=3351p, V0=3, HRCF=1m Ic=f(Vce), Ib=Par RCI=3838, GAMM=3351p, V0=3, HRCF=1m Problem: There is no combination RCI / GAMM, which is sufficient for both cases AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 4
5 Problem definition Sufficient modeling of quasi saturation for Vb driven output characteristic IFX T2 Bad modeling of quasi saturation for Ib driven output characteristic IFX T2 Ic=f(Vce), Vbe=Par RCI=6723, GAMM=1369p, V0=3, HRCF=1m Ic=f(Vce), Ib=Par RCI=6723, GAMM=1369p, V0=3, HRCF=1m Problem: There is no combination RCI / GAMM, which is sufficient for both cases AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 5
6 Agenda Introduction Problem definition Ohmic or non-ohmic quasisaturation? Simulation experiment Extraction method for IBCI / IBEIP split Summary AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 6
7 Ohmic or non-ohmic quasisaturation Schroeter evaluated the KULL equation used in VBIC in 1993*: Man erkennt..., daß diese Beziehung [für Iepi] nur für den... Fall kleiner Spannungen Uc gilt, bei dem immer ein (ausgedehntes ohmsches Gebiet im Kollektor existiert. [Bei Kull] wird sogar die Weite der BC-Raumladungszone als vernachlässigbar klein gegenüber der Weite Wc des epitaktischen Kollektors angenommen. Aus dieser Quasi-Neutralität des gesamten epitaktischen Kollektors folgt, dass die Gültigkeit [der Gleichung für Iepi] von der Theorie her nur auf den Spannungbereich Uc < Ulim beschränkt ist. Is this explanation valid for the differences we observed simulating Vb and Ib-driven output characteristics using VBIC? *M.Schroeter: Physikalische Modelle für schnelle Silizium-Bipolartransistoren, Habilitationsschrift, Ruhr Uni Bochum, 1993, p.112 AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 7
8 Principle sketch of the BJT collector problem I HC (HC=hot carrier) defines the limit between ohmic range (constant mobility) and non-ohmic range (velocity saturation, hot carrier, scattering limited drift velocity) V lim defines the limit between low and high voltage I ohm defines the limit between injection into the collector (Kirk effect, base widening, induced base or base push out) and active normal mode for Vc < Vlim I QS defines the limit between non-ohmic QS and active normal mode for Vc > Vlim AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 8
9 Principle sketch of the BJT collector problem For the technology under investigation we may estimate V lim =2.1 V and I HC =8.5 ma That is, the QS effect is clearly located in the range, which is called ohmic QS and where the KULL equation is assumed to be exact What else could be the reason for the observed problem? AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 9
10 Agenda Introduction Problem definition Ohmic or non-ohmic quasisaturation? Simulation experiment Extraction method for IBCI / IBEIP split Summary AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 10
11 Simulation experiment To solve the problem, we made an simulation experiment using VBIC1.2 and a simplified model parameter set (no series resistances, Early effect etc.): IS=100a, IBEI=3a, IBCI=5a, RCI=0, GAMM=1n We set the parameters in a way, that for both output characteristics we get the same Ic at Vc=4 V and Ib=100 µa resp. Vb=0.8 V. No QS appears, because RCI=0 Vb driven Ib driven AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 11
12 Simulation experiment In the next step RCI is increased: IS=100a, IBEI=3a, IBCI=5a, RCI=800, GAMM=1n QS appears, and we observe: 1. Ic becomes lower for Ib-driven case and 2. Ib increases in QS for the Vb-driven case blue=vb driven violet=ib driven brown=ib for Vb driven case AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 12
13 Simulation experiment Vb driven: In QS an additional current I BC is created by the fwd biased junction BI-CI, VB delivers I BC additional to I BE Ib driven: I B is hold constant, hence, I BE is reduced by the amount of I BC, thus via Beta I T is reduced. Additional, at node CI we have I C +I BC =I T, which means a further reduction of I C VBIC C CX I C 20 µa 20µA CI I RCI 120 µa B BI I BC I BE I T EI 100 µa 100µA I B 80µA Vb driven Ib driven AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 13
14 Real device example The reduction of the simulated collector current in QS in the Ib-driven case is caused by the fwd biased junction BI-CI, which creates an unrealistic high current I BC, compared to real measurements Vb driven, IBCI=10a, IBEIP=0 Ib driven, IBCI=10a, IBEIP=0 AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 14
15 Solution If we use the external BC junction (VBIC model parameter IBEP) additional to or instead of the internal, we are able to model both Vb driven and Ib driven output characteristic in QS sufficient I BEP diode is connected between nodes BX and CX, it s forward bias is much lower than for I BC between BI-CI, hence the current I BEP too VBIC C CX I C 1 µa 1µA I RCI CI 101 µa 100 µa 100µA B I B I BEP I BC BI I BE 99µA I T EI Vb driven Ib driven AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 15
16 Real device example We set IBCI=0 here and used the external BC-junction only to model the BC current, which was extracted before on a reverse Gummel characteristic Now both curves show a sufficient fit in the QS range Vb driven, IBCI=0, IBEIP=10a Ib driven, IBCI=0, IBEIP=10a AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 16
17 Agenda Introduction Problem definition Ohmic or non-ohmic quasisaturation? Simulation experiment Extraction method for IBCI / IBEIP split Summary AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 17
18 Extraction method for IBCI and IBEIP The observed behavior opens a possibility to extract the split between the model parameters IBCI and IBEIP: 1. Extract the saturation current for the whole BC diode using a reverse Gummel measurement and apply it in a 1st step to IBCI only 2. Extract the QS parameters RCI0, GAMM, VLIM, VPT using the Vb-driven output characteristic in the QS range 3. Optimize then the Ib-driven output characteristic in QS by decreasing IBCI and increasing IBEIP by the same amount, that is, split the extracted value to both junctions AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 18
19 Agenda Introduction Problem definition Ohmic or non-ohmic quasisaturation? Simulation experiment Extraction method for IBCI / IBEIP split Summary AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 19
20 Summary The observed problem using the VBIC model in QS for simulated Ib- and Vb-driven output characteristics appears, if the inner BC junction of the model is excessive forward biased Whereas the Ib-driven output characteristic is strongly affected by I BC, the Vb-driven output characteristic is not A solution is possible using a split of the current I BC to both the internal and external BC junction. In the extreme case, we may use the external junction I BEP only The observed behavior opens a possibility to extract the split between the parameters IBCI and IBEIP As long as the condition of ohmic quasisaturation is given (pure Silicon technologies), VBIC is able to model both output characteristics in QS sufficient AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 20
21 Conclusion The analyses above confirms once again the following experience: If a problem is defined, the solution is on half-way. Julian Huxley ( ) AKB2010, , Crolles, Joerg Berkner, What happens, if VBIC fails in QS? Copyright Infineon Technologies All rights reserved. Page 21
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