150mA CMOS LDO OUT SHDN BYP. Product Description. Applications. Block Diagram GS2915. Over Current. Protection. Over Temperture. Protection VREF VSS
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1 150mA CMOS LDO Product Description The series are a low-dropout linear regulators. There are devices designed specifically for battery-operated systems. Ground current is very small (2 A - Typ), that significantly extends battery life. Low power consumption and high accuracy is achieved through CMOS and programmable technologies. Output voltage: 1.5V to 6.0V fuse The consists of a high-precision voltage reference, an error correction circuit, and a current limited output driver. With good transient responses, output remains stable even during load changes. The SHDN input enables the output to be turned off, resulting in reduced power consumption. Features Maximum output current: 150mA Highly accurate: output voltage ±1.4% Low power consumption. On-chip Protections: Thermal, Short Circuit Small input/output differential: 0.165V at 150mA Applications Battery-Operated Systems Portable Computers Portable Cameras and Video Recorders Reference Voltage Sources Instrumentation The incorporates both over-temperature and over-current protection. SOT25 (150mW) package is available. Block Diagram IN OUT Over Current Protection Over Temperture Protection + Amp - SHDN BYP VREF VSS 1
2 Packages & Pin Assignments LF (SOT-23-5) Pin # Symbol Function 1 V IN Unregulated supply current. 2 V SS Ground terminal. 3 SHDN Shutdown control input. The regulator is fully enabled when logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage fails to zero and supply current is reduced to 0.5µA (max). 4 B P Reference bypass input. Connecting a 470pF to this input further reduces output noise. 5 V OUT Regulated voltage output. Ordering Information 2
3 Marking Information Part Number Marking Output L15F CCG YWG 1.5V L18F CCF YWG 1.8V L25F CCH YWG 2.5V L28F CCJ YWG 2.8V L30F CCQ YWG 3.0V L33F CCR YWG 3.3V L50F CCV YWG 5.0V For other voltages, please contact factory. Absolute Maximum Ratings Symbol Parameter Ratings Units V IN Input Voltage 6.5 V I OUT Output Current 150 ma V OUT Output Voltage V SS -0.3 ~ V IN +0.3 V T OPR Operating Ambient Temperature -30 ~ + 80 C T STG Storage temperature -40 ~ +125 C θ JA Thermal Resistance Junction to Ambient SOT C/W P D Power Dissipation SOT W 3
4 Electrical Characteristics (at Ta = 25 C, V IN = V OUT (nominal)+0.5v, unless otherwise noted) Parameter Conditions Min Typ Max Unit Test Circuit Output Voltage Accuracy Line Regulation V OUT / V IN V OUT Load Regulation (Note1) Dropout Voltage I OUT =0mA I OUT =0 to 150mA I OUT =1mA, (V OUT +0.1V)<V IN <6.5V %V %/V Fig.1 0mA I OUT 120mA, C OUT =1µF %/ma Fig.2 I OUT =150m A V OUT >2.5V mv 2.0V<V OUT 2.5V V OUT 2.0V Current Limit ma Shutdown Exit Delay Shutdown Input Bias Current Shutdown Supply Current Shutdown Input Threshold Low Shutdown Input Threshold High C BP =0µF ;C OUT =1µF I OUT =100mA 600 µsec V SHDN =V IN 100 na V SHDN =GND µa V IN =2.5 to 5.5V 0.4 V V IN =2.5 to 5.5V 2 V Ground Pin Current I OUT =0mA to 150mA 2 5 µa Fig.3 Note 1: Load Regulation is measured using pulse techniques with duty cycle <5% Typical Application Precision Fixed Voltage Regulator The regulator is enable any time the shutdown input (SHDN) is at or below V IH, and shutdown (disable) when SHDN is at or below V IL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected to the input supply. While in shutdown, supply current decreases to 0.05μA (typical), V OUT falls to zero volts. A 470pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. If output is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. A 1μF (min) capacitor from V OUT to ground is required. The output capacitor should have an effective series resistance greater than 0.1Ω and less than 5Ω. A 1μF capacitor should be connected from V IN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30 C, solid tantalums are recommended for applications operating below -25 C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 4
5 Typical Application (Continue) 1uF VIN VOUT 1uF VOUT Battery -XX VSS SHDN SHUTDOWN CONTROL (to CMOS Logic or Tie to VIN if unused) Bypass 470pF REFERENCE BYPASS CAP (Optional) Test Circuits Figure 1: Line Regulation Figure 2: Load Regulation VIN SHDN Out 33Ω IO=1mA BP VSS ua Figure 3 : Ground Current 5
6 Typical Performance Characteristics 6
7 Typical Performance Characteristics (Continue) 7
8 Typical Performance Characteristics (Continue) Rise Time of 3.3V LDO with Bypass Capacitor C IN =1uF,C BYP =470PF,I LOAD =100mA V IN =4.3V,Temp=25 C,Rise Time =448us Rise Time of 3.3V LDO without Bypass Capacitor C IN =1uF,C OUT =1uF,C BYE =0PFI LOAD =100mA V IN =4.3V,Temp=25 C,Rise Time =184us Fall Time of 3.3V LDO with Bypass Capacitor C IN =1uF,C OUT =1uF,C BYP =470PF,I LOAD =50mA V IN =4.3V,Temp=25 C,Fall Time =100us Fall Time of 3.3V LDO with Bypass Capacitor C IN =1uF,C OUT =1uF,C BYP =470PF,I LOAD =50mA V IN =4.3V,Temp=25 C,Fall Time =100us 8
9 Typical Performance Characteristics (Continue) Rise Time of 5.0V LDO with Bypass Capacitor C IN =1uF,C OUT =1uF,C BYP =470PF,I LOAD =100mA V IN =6V,Temp=25 C,Rise Time =390us Rise Time of 5.0V LDO with Bypass Capacitor C IN =1uF,C OUT =1uF,C BYP =470PF,I LOAD =100mA V IN =6V,Temp=25 C,Rise Time =192us Fall Time of 5.0V LDO with Bypass Capacitor C IN =1uF,C OUT =1uF,C BYP =470PF,I LOAD =50mA V IN =6V,Temp=25 C,Fall Time =390us Fall Time of 5.0V LDO with Bypass Capacitor C IN =1uF,C OUT =1uF,C BYP =0PF,I LOAD =100mA V IN =6V,Temp=25 C,Fall Time =88us LDO Regulation of 3.3V LDO C IN =1uF,C OUT =2.2uF,C BYP =470PF, V IN =V OUT +0.25V,Temp=25 C LDO Regulation of 3.3V LDO C IN =1uF,C OUT =2.2uF,C BYP =470PF, V IN =V OUT +0.25V,Temp=25 C 9
10 Typical Performance Characteristics (Continue) LDO Regulation of 3.3V LDO C IN =1uF,C OUT =2.2uF,C BYP =470PF, V IN =V OUT +0.25V,Temp=25 C LDO Regulation of 3.3V LDO Conditions: V IN =4V,+1V 2.5kHz LDO Regulation of 3.3V LDO Conditions: V IN =6V,+1V Square 2.5kHz Thermal Shutdown Response 5.0V LDO Conditions: V IN =6V,C IN =0uF,C OUT =1uF 10
11 Package Dimension SOT-25 PLASTIC PACKAGE D e1 E G E1 e b L (L1) θ A A2 c A1 Dimensions SYMBOL Millimeters Inches MIN MAX MIN MAX A A A b c D E E e 0.95 (TYP).037 (TYP) e (TYP).075 (TYP) L L (TYP).024 (TYP) G 0.25 (TYP).010 (TYP)
12 NOTICE Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. CONTACT US GS Headquarter 4F.,No.43-1,Lane11,Sec.6,Minquan E.Rd Neihu District Taipei City 114, Taiwan (R.O.C) Wu-Xi Branch No.21 Changjiang Rd., WND, Wuxi, Jiangsu, China (INFO. &. TECH. Science Park Building A 210 Room) sales_cn@gs-power.com 824 Bolton Drive Milpitas. CA RD Division sdklfj;sj;dj Version_1.0 Notice
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