A flexible HiPIMS pulser for the latest generation of coatings

Transcription

1 HIPSTER 1 Pulser A flexible HiPIMS pulser for the latest generation of coatings Reactive mode HiPSTER 1 HiPIMS Pulser Our HiPSTER HiPIMS units are designed by experts in the field with an excellent track record of plasma process development and thin film deposition in order to generate robust and repeatable HiPIMS processes. All units in the HiPSTER series can be equipped with our recent reactive HiPIMS process control, which allows for stabilization of reactive processes, a wider process window of reactive gas flow, maintained stoichiometric thin film composition, and high deposition rates. With the new ultra-fast switching technology and extended HiPIMS pulse control the HiPSTER is a perfect tool when developing and running state-of-the-art HiPIMS processes. Also, upgrading your existing magnetron system to HiPIMS has never been easier. The HiPSTER can be directly connected either to an existing DC supply or to one of our tailor-made HiPSTER DC units. Features Applications Stable and robust discharge process (constant voltage and no unwanted oscillations) Can be triggered externally (multiple power supplies) Hard coatings: Smoother and denser elemental as well as reactively deposited compound coatings, which result in increased hardness, reduced corrosion, and less friction New switching technology allowing HiPIMS pulsing frequencies up to 10 khz Optical coatings: Increased optical properties through smoother interfaces and denser structures Tested using a wide range of magnetrons and processes (incl. reactive HiPIMS) Diffusion barriers: Better performance through increased coating density Unique feedback system allowing process regulation by controlling the pulse current Electrical coatings: Improved conductivity enabling reduced coating thickness and reduced heat load. Also increased isolation in the case of insulators can be obtained Real-time information on the discharge pulse voltage and current Add Ionautics superposition technology for HiPIMS DC 3-D coatings: Uniform film coverage on complex shaped substrates

2 Pulser HIPSTER 1 HiPIMS pulse current vs reactive gas HiPIMS peak current vs reactive gas WITHOUT REGULATION WITHOUT REGULATION Peak current O 2 (sccm) Output Specifications Input Specifications Output Average Power: 1000 W Input Voltage AC: 1 phase N, VAC, 50/60 Hz Output Peak Voltage: 1000 V Input Current at 230 V: 0.3 A Output Peak Current: 100 A DC Charging Input: 1000 V max, positive grounded Regulation Modes: Voltage, Current, Trigger In: Ground-Referenced 5V CMOS input Power, Pulse current Pulse Frequency: Pulse Duration: Arc control: reaction time 1 to Hz 2.5 μs to 1000 μs < 2 μs Dimensions Size: 19 rack (3U) 135 mm (H) x 483 mm (W) x 390 mm (D) Weight: 5 kg Environmental Specifications Operating Temperature: 5 C to 40 C Storage Temperature: Relative Humidity: Air Pressure: Cooling: Pollution degree: Norms: -25 C to 55 C max 85% non-condensing 80 kpa to 106 kpa Air Cooling 2 (or better). Cooling air must normally be free of corrosive vapors and conductive particles. CE marked DANIEL LUNDIN PhD Expert in the field of HiPIMS processes and magnetron sputtering with focus on deposition processes and process characterization. ULF HELMERSSON Professor Expert in the field of physical vapor deposition, such as magnetron sputtering and HiPIMS processes with focus on material science. Contact! RAFAEL SANCHEZ Sales manager Tel: Sweden Uvebergsvägen 45 SE Linköping Kabelgatan 9B, SE Öjebyn USA NE Woodinville/Duvall Rd. #101 Woodinville, WA info@ionautics.com twitter.com/ionautics

3 HIPSTER 6 Pulser A flexible HiPIMS pulser for the latest generation of coatings Reactive mode HiPSTER 6 HiPIMS Pulser Our HiPSTER HiPIMS units are designed by experts in the field with an excellent track record of plasma process development and thin film deposition in order to generate robust and repeatable HiPIMS processes. All units in the HiPSTER series can be equipped with our recent reactive HiPIMS process control, which allows for stabilization of reactive processes, a wider process window of reactive gas flow, maintained stoichiometric thin film composition, and high deposition rates. With the new ultra-fast switching technology and extended HiPIMS pulse control the HiPSTER is a perfect tool when developing and running state-of-the-art HiPIMS processes. Also, upgrading your existing magnetron system to HiPIMS has never been easier. The HiPSTER can be directly connected either to an existing DC supply or to one of our tailor-made HiPSTER DC units. Features Applications Stable and robust discharge process (constant voltage and no unwanted oscillations) Can be triggered externally (multiple power supplies) Hard coatings: Smoother and denser elemental as well as reactively deposited compound coatings, which result in increased hardness, reduced corrosion, and less friction New switching technology allowing HiPIMS pulsing frequencies up to 10 khz Optical coatings: Increased optical properties through smoother interfaces and denser structures Tested using a wide range of magnetrons and processes (incl. reactive HiPIMS) Diffusion barriers: Better performance through increased coating density Unique feedback system allowing process regulation by controlling the pulse current Electrical coatings: Improved conductivity enabling reduced coating thickness and reduced heat load. Also increased isolation in the case of insulators can be obtained Real-time information on the discharge pulse voltage and current Add Ionautics superposition technology for HiPIMS DC 3-D coatings: Uniform film coverage on complex shaped substrates

4 Pulser HIPSTER 6 HiPIMS pulse current vs reactive gas HiPIMS peak current vs reactive gas WITHOUT REGULATION WITHOUT REGULATION Peak current O 2 (sccm) Output Specifications Input Specifications Output Average Power: 6000 W Input Voltage AC: 1 phase N, VAC, 50/60 Hz Output Peak Voltage: 1000 V Input Current at 230 V: 0.3 A Output Peak Current: 600 A DC Charging Input: 1000 V max, positive grounded Regulation Modes: Voltage, Current, Trigger In: Ground-Referenced 5V CMOS input Power, Pulse current Pulse Frequency: Pulse Duration: Arc control: reaction time 1 to Hz 2.5 μs to 1000 μs < 2 μs Dimensions Size: 19 rack (3U) 135 mm (H) x 483 mm (W) x 390 mm (D) Weight: 5 kg Environmental Specifications Operating Temperature: 5 C to 40 C Storage Temperature: Relative Humidity: Air Pressure: Cooling: Pollution degree: -25 C to 55 C max 85% non-condensing 80 kpa to 106 kpa Air Cooling 2 (or better). Cooling air must normally be free of corrosive vapors and conductive particles. Norms: CE marked DANIEL LUNDIN PhD Expert in the field of HiPIMS processes and magnetron sputtering with focus on deposition processes and process characterization. ULF HELMERSSON Professor Expert in the field of physical vapor deposition, such as magnetron sputtering and HiPIMS processes with focus on material science. Contact! RAFAEL SANCHEZ Sales manager Tel: Sweden Uvebergsvägen 45 SE Linköping Kabelgatan 9B, SE Öjebyn USA NE Woodinville/Duvall Rd. #101 Woodinville, WA info@ionautics.com twitter.com/ionautics

5 Sync HIPSTER Capable of synchronizing all HiPIMS and bias units in the HiPSTER series for the ultimate HiPIMS experience HiPSTER Sync Unit The HiPSTER synchronization unit allows the user to control the pulsing of up to eight HiPSTER HiPIMS power supplies, compatible HiPSTER bias units, or compatible diagnostic hardware. This enables, for example, pulse trains synchronized between multiple units, or synchronized and delayed pulses. For increased flexibility, the HiPSTER synchronization unit can be triggered externally. Features Synchronized pulsing of up to eight units in the HiPSTER series Applications Pulse trains with a fixed number of pulses at a fixed frequency Pulse trains synchronized between multiple units Synchronized and delayed pulses repeated at a common frequency Internal trigger available to synchronize other devices Multilayer deposition using more than one magnetron, where the user deposits a repeated sequence of layers with controlled layer thickness Co-sputtering of compounds from more than one magnetron Synchronized and delayed substrate bias for selective acceleration of ions, where different ionic species occur in the vicinity of the substrate at different points in time Synchronized HiPIMS process diagnostics by triggering external diagnostic equipment Can be triggered externally from another device acting as Master

6 Input Specifications Physical Specifications Input Voltage AC: 1 phase N, VAC, 50/60 Hz Casing type: 19 rack (1U) Input Current at 230 V: 0.07 A Dimensions: 44 mm (H) x 483 mm Trigger Channels Out: Ground-Referenced 5V CMOS input (W) x 90 mm (D) Weight: 1 kg Environmental Specifications Operating Temperature: 5 C to 25 C Storage Temperature: Relative Humidity: Air Pressure: Cooling: Pollution degree: Norms: -25 C to 55 C max 85% non-condensing 80 kpa to 106 kpa Air Cooling 2 (or better). Cooling air must normally be free of corrosive vapors and conductive particles. CE marked DANIEL LUNDIN PhD Expert in the field of HiPIMS processes and magnetron sputtering with focus on deposition processes and process characterization. ULF HELMERSSON Professor Expert in the field of physical vapor deposition, such as magnetron sputtering and HiPIMS processes with focus on material science. Contact! RAFAEL SANCHEZ Sales manager Tel: Sweden Uvebergsvägen 45 SE Linköping Kabelgatan 9B, SE Öjebyn USA NE Woodinville/Duvall Rd. #101 Woodinville, WA info@ionautics.com twitter.com/ionautics