Expert. Elemental Scientific VPD-ICPMS. Fully Automated Auto Scanning System ICP ICPMS AA

Transcription

1 Expert VPD-ICPMS Fully Automated Auto Scanning System Elemental Scientific ICP ICPMS AA

2 Expert Features An indispensable tool for the determination of metal impurities in Si wafer Expert automates routine metal impurity analysis in Si wafers. Through Vapor Phase Decomposition (VPD) a layer of a silicon wafer (6 to 12 and/or 18 ) is decomposed. The impurities from the decomposed layer are collected by a scan solution and automatically analyzed by ICPMS. Expert s unique features eliminate many difficulties experienced with conventional techniques. Optional integration with an ICPMS, using a specially designed autosampler and software, allows fully automated VPD-ICPMS analysis. Key Features Automatic sample solution transport from the VPD to the ICPMS eliminates the risk of contamination associated with manual sample handling. Automatic scan nozzle check between wafers ensures contamination is below a user defined level. Automatic scan solution monitoring and replacement prevents contamination. Automatic QC check between samples to trigger ICPMS recalibration. Automatic vial cleaning option to avoid cumbersome vial preparation. Optional VIS software allows graphic display of radial or sector scan results. 2

3 VPD Chamber Features Improved etching speed in high purity PTFE, gas-tight VPD chamber. Bulk-Si and Poly-Si etching module option (EXP-BEM) enables etching of Poly-Si, Bulk-Si, WSi, Ti and TiN films. HF generation module using a high purity PFA nebulizer. End Point Detector (Option) to detect etching completion by monitoring film thickness. 3

4 Expert Features Wafer Scanning Features The mapping sensor on the wafer transfer robot detects the precise location of wafers at each cassette (6 12 manual cassette or 12 FOSB). An optional barcode reader automatically reads the FOUP ID. A specially designed scan nozzle (patented) allows recovery of 200 nm Si 3 N 4 film. A Teflon media ULPA filter provides a Class 1 environment. Several interlock sensors, HF leak detector, and liquid spill detector maintain a safe environment. CE mark, SEMI-S2 and S8 certified. Scanning a silicon nitride film 4

5 Six different scanning patterns are available (Full scan, Radial scan, (Square)-Sector scan, Radial-Sector scan, Full-Bevel scan and Bevel scan). Each color represents an independent sample. Bevel scan 5

6 Expert Procedure Intelligent VPD-ICPMS software has been developed to integrate the Expert and ICPMS. Fully Automated VPD-ICPMS Procedure 1. A mapping sensor identifies the location of the wafer. 2. A preset recipe number automatically sets up the VPD time, scanning mode, and volume of scan solution for each wafer. 3. The first wafer is automatically transferred to the aligner and aligned without touching a bevel. 4. The wafer is transferred to the VPD chamber. HF vapor is generated by a PFA nebulizer and introduced to the chamber. A layer (e.g. oxide or nitride) is decomposed and the etching is terminated by EPD or time. 5. The wafer is transferred to the Scan Stage and the special scanning nozzle draws up to 1.5mL of the scan solution. 6. The nozzle moves to the wafer and delivers 100µL of the scan solution to the wafer surface. The wafer is scanned according to the method prescribed in the recipe. 7. The nozzle recovers the scanned solution from the wafer and deposits it in a vial. 8. While Expert is collecting the wafer samples, the VPD interface software (VIS) enables the ICPMS to analyze standard solutions or QC check solution. The system can automatically recalibrate if needed. 9. The collected VPD samples are analyzed. 10. All wafer information is transferred to VIS and the wafer analysis data are recorded. 11. VIS provides automated QA/QC functions that check the correlation coefficients of calibration curves, minimum sensitivity, and QC recovery. Sample results are checked against the predefined criteria and a pre-selected action is automatically initiated. (The user predetermines available actions). 12. The VPD for the next wafer is performed while the previous wafer is scanned. 13. QC Check solution is analyzed automatically at preset intervals. (ex: 10 wafer samples) 14. If contamination is detected, the scan nozzle automatically cleans with an extended cleaning process. A blank scan solution is then analyzed to verify scanner cleanliness. 15. In the event of scan solution contamination, new scan solution is automatically loaded. Expert Software - Main Screen 6

7 VIS Main menu Inside Expert System 7

8 Expert Configuration Expert Configuration Expert is a fully automated system to collect metal impurities in Si wafer samples by means of Vapor Phase Decomposition (VPD). The Expert system automatically performs decomposition and recovery of metal impurities. In addition, Expert can be integrated with ICPMS, which allows automatic determination of metal impurities in Si wafers. Expert options can expand applications for various wafers. 1. Size 2,000 (W) x 2,300 (D) x 2,200 (H) mm 3 2. Weight 1,400 kg 3. Power VAC, 6.0 kw, Single phase, 50/60 Hz 4. Utilities N 2 gas, Air, DIW, Waste, Ventilation, Vacuum (Options : O 2 gas, HF, H 2 O 2 ) 5. Basic Module Wafer transfer robot VPD chamber and HF vapor generation module Aligner for 6-12 wafer Scan stage and X-Y-Z scanning arm and patented scan nozzle Scan solution recovery volume check 2 Sample racks (40 vials/each). When EXP-MS option is used, the configuration is different. Teflon ULPA filter media (Class 1) Intelligent operating software Desktop PC with Windows 7 operating system Film Etch Rate (nm/min) Film Etch Rate (nm/min) 8

9 6. Options PP panel upgrade (EXP-PP) 12 FOUP opener module (EXP-FOUP) 6 and 8 manual common cassette module with position sensor (EXP-CA) 6 or 8 adaptor for 12 FOUP (EXP-AD) RFID reader (EXP-RFID) Barcode reader (EXP-BCR) End point detection system (EXP-EPD) VPD and ICPMS integration module including autosampler and software (EXP-MS) Standard solution delivery module (EXP-STD) Bulk-Si and Poly-Si etching module (EXP-BEM) Wafer drying module (EXP-DR) Auto chemical supply system (EXP-CS) Edge scan module (EXP-EG) Auto vial wash system (EXP-VC) Wafer weight measurement module (EXP-BL) Integration with OHT system (EXP-OHT) SECS communication with CIM HOST (EXP-SECS) Automated standard addition system (EXP-ASAS) Ozone gas destruction module (EXP-OD) 7. Compliance SEMI-S2 and SEMI-S8, CE certified 9

10 Expert Utilities Expert Conventional Features Only Available with Expert* Si Wafer CVD & PVD Diffusion Dry-Etch Implantation PE-Oxide (HDP, TEOS) PE-SiN (Nitride) PE-SiON BPSG/PSG USG Oxide Nitride High-K Layers by ALD (AlO, HfO, ZrO, TaO) Low Power Etched Wafer (Oxide & Nitride Etch) Low Energy Ion Dosed Wafer Medium Current <10 13 ions / cm 2 Si (Single Crystal) EPI (Epitaxial) SOI (Silicon On Insulator) WSi Ti / TiN W Al Cu Poly (Doped and Undoped) High Power Etched Wafer (Si & Metal Etch) High Energy Ion Dosed Wafer High Current >10 13 ions / cm 2 *Different chemistry and Dual Scan Nozzle technology makes these possible 10

11 Size : 1,975 (W) x 2,427 (D) x 2,200 (H) mm 3 Weight : 1,400 kg N 2 (>99.995%) : MPa, 50 L/min (max), 1 line, 1/4 Swagelok fitting Air : MPa, 50 L/min (max), 1 line, 1/4 Swagelok fitting Power : VAC, 6 kw, Single phase, 50/60 Hz DIW : MPa, 0.1 L/min (max), 1/4 Pillar fitting (If dual piping is required, outer connection is 1/2 ferrule) Ventilation : > 360 m 3 /hour, O.D. 150 mm x 2 ducts > 100 m 3 /hour, O.D. 100 mm x 1 duct (BEM option) Waste : 1 line, 1 1/4 (30A) Flange fitting Vacuum : < - 80 kpa, 3/8 Swagelok fitting Environment : Class 1,000 cleanroom Temperature : C Humidity : 35 85% (no condensation) Option Utilities O 2 (>99.5%) : MPa, 5 L/min (max), 1 line, 1/4 Swagelok fitting HF ( 49%) : MPa, 0.1 L/min (max), 1/4 Pillar fitting (if dual piping is required, outer connection is 1/2 ferrule) H 2 O 2 ( 35%) : MPa, 0.1 L/min (max), 1/4 Pillar fitting (if dual piping is required, outer connection is 1/2 ferrule) 11

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