Fast Activating Miniature Lithium Thionylchlorid Reserve Battery
|
|
|
- Camilla Anderson
- 5 years ago
- Views:
Transcription
1 Fast Activating Miniature Lithium Thionylchlorid Reserve Battery 46 th Power Sources Conference June 9, 2014 Harald Wich, Roland Hein, Sergio Moreno Lechado Diehl & Eagle Picher GmbH
2 Overview Background Conceptual idea Design considerations Modelling Experimental set-up First results Conclusion and future work 2 Copyright Diehl & Eagle Picher GmbH
3 Background Fast activation Large caliber Power Supplies usually benign requirements, e.g. MOFA, DEP14001 Can we make it faster DEP normal activation DEP fast activation in medium caliber 3 Copyright Diehl & Eagle Picher GmbH
4 Background Miniaturization Large calibers can afford large batteries MOFA 38,1 mm h 17 mm DEP ,17 mm h 25,33 mm Can we make it smaller M235 5,6 mm h 5,5 mm 4 Copyright Diehl & Eagle Picher GmbH
5 ma Background Fast and small and no spin and early high current Large caliber Medium caliber ms rise time 8 ms 32 x 25 mm size 11 x 11 mm / min spin zero n.a. current 15 ma Current (I) Voltage (V) ms 5 Copyright Diehl & Eagle Picher GmbH
6 Conceptual idea Liquid Reserve Battery Dry cell lithium-seperator-carbon collector Same chemistry as DEP Electrolyte in glass ampoule Support/activation system Acceleration based activation (release of electrolyte) Acceleration based distribution of electrolyte (ampoule on top of cell) Ampoule Electrolyte AM Cell 6 Copyright Diehl & Eagle Picher GmbH
7 Design Consideration Cell Area Electrolyte quantity Break force Drop safety Wetting speed Firing acceleration 7 Copyright Diehl & Eagle Picher GmbH
8 Modelling Cell area Engineering calculation Electrolyte quantity Engineering calculation Break force Top view of support structure F = a Z0 0 m 0 Drop safety Tolerance Variation t 0 a0 t 0 t 0 8 Copyright Diehl & Eagle Picher GmbH
9 Modelling FEM of break disk Number of bridges Cross-section of bridges Forces Stress 9 Copyright Diehl & Eagle Picher GmbH
10 Force (N) Modelling Breaking of glass ampoule Static test Engineering calculation a 1 free flight Deformation (mm) t 0 t 1 F Z1 = a 1 m 1 + E Kin t 1 10 Copyright Diehl & Eagle Picher GmbH
11 Modelling Electrolyte Distribution Simple engineering approach CFD Model (Comsol Multiphysics ) 11 Copyright Diehl & Eagle Picher GmbH
12 Experimental set-up Drop-Tower 10,000 g s, μs Activation Total life 40 mm live-firing > 10,000 g s, > 100 μs Activation Cell flooding 12 Copyright Diehl & Eagle Picher GmbH
13 Experimental set-up Live-firing, target application Activation Cell flooding Load pulse 13 Copyright Diehl & Eagle Picher GmbH
14 Conclusion and future work Conclusions Miniaturized Fast activation Load pulse and life time Future work Improvements of break disk and ampoule Manufacturability Qualification 14 Copyright Diehl & Eagle Picher GmbH
15 Future work A family of Miniature Batteries 11 mm h 11 mm No spin 10/11 mm h 10/13 mm High spin 10/20 mm h 3/11 mm No spin/high spin Long life 15 Copyright Diehl & Eagle Picher GmbH
16 Thank you for your attention! Questions? 16 Copyright Diehl & Eagle Picher GmbH
The Power of the Fuze. 60 th Annual Fuze Conference May 11 th, 2017 Harald Wich Diehl & Eagle Picher GmbH
The Power of the Fuze 60 th Annual Fuze Conference May 11 th, 2017 Harald Wich Diehl & Eagle Picher GmbH Overview History, the large Calibre Fuzes Requirements Challenges Miniaturised Fuze Batteries New
Future Electronic Fuzing for Enhanced Effects. 57 th Annual Fuze Conference July 30 th, 2014 Harald Wich Diehl & Eagle Picher GmbH
Future Electronic Fuzing for Enhanced Effects 57 th Annual Fuze Conference July 30 th, 2014 Harald Wich Diehl & Eagle Picher GmbH Overview Definitions and History Fuze Functions and Categories Modern Electronic
CELLS & Internal Resistance
CELLS & Internal Resistance Cells A Cell is a source of Electrical Energy and hence we can obtain a current from it. An electric current is made when a flow of electrons are passed through some medium.
Printing versus coating technology Which way Printed Electronics with solution coating will go?
Printing versus coating technology Which way Printed Electronics with solution coating will go? Frank Schäfer, Andrea Glawe, Dr. Daniel Eggerath, KROENERT GmbH& Co KG, Schuetzenstrasse 105, 22761 Hamburg
1.6mm Side Looking Infrared Emitting Diode IR968-8C
Features Low forward voltage Peak wavelength λp=940nm High reliability This product itself will remain within RoHS compliant version. Description The is a GaAlAs infrared emitting diode. The miniature
Energy Bank Capacitor Applications
Energy Bank Capacitor Applications Table of Contents Introduction Electrical parameters Energy Peak current (discharge voltage) Voltage ripple Pulse Current Principle Pulse Forming Network AVX realizations
1.6mm Side Looking Phototransistor PT968-8C
Features Fast response time High sensitivity Small junction capacitance Pb Free This product itself will remain within RoHS compliant version. Description is a phototransistor in miniature package which
Flexible Counter Series in DIN size 24 x 48 mm
Flexible Counter Series in DIN size 24 x 48 mm high contrast 8-digit LCD display or brilliant 6-digit LED display different supply voltages available: independent of mains supply with lithium battery or
3B SCIENTIFIC PHYSICS
B SCINTIFIC PHYSICS Critical Potentials Tube S with Ne-Filling 00062 Instruction sheet 0/5 ALF BNC jack 2 Glass coating at the anode voltage Collector ring Anode 5 lectron gun 6 Heater filament 7 Connection
TX-1AA TRANSMITTER. Note:
TX-1AA TRANSMITTER Physical Dimensions: 2.95 x 1.07 Power Requirements: 1 AA Cell Alkaline Typical Duration: 30 Hours Maximum Duration: 70 Hours Free Air Range Test: 20 Feet This transmitter can be programmed
Jasmin Smajic 1, Christian Hafner 2, Dirk Baumann 2, Christophe Fumeaux 3, July 5, 2010 Simulations of Optical Plasmonic Nano-Antennas
Jasmin Smajic 1, Christian Hafner 2, Dirk Baumann 2, Christophe Fumeaux 3, July 5, 2010 Simulations of Optical Plasmonic Nano-Antennas 1 ABB Switzerland Ltd. Corporate Research Dättwil Segelhofstrasse
Micro Tilt and Vibration Sensor Datasheet
Micro Tilt and Vibration Sensor Datasheet DESCRIPTION FEATURES Tilt and vibration sensor Halogen free Wide supply voltage range: 1.80 V to 15 V Low operating current (e.g. Icc max. 0.2µA at Vcc 2V and
12-1: Introduction to Batteries
Chapter 12 Batteries Topics Covered in Chapter 12 12-1: Introduction to Batteries 12-6: Series and Parallel Connected Cells 12-7: Current Drain Depends on Load Resistance 12-8: Internal Resistance of a
Table 1: Product overview Type number Package Configuration Nexperia
Rev. 06 4 April 2005 Product data sheet. Product profile. General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table : Product overview Type
Supplementary Figure 1. Scanning Electron Microscopy images of the pristine electrodes. (a) negative electrode and (b) positive electrode.
a b Supplementary Figure 1. Scanning Electron Microscopy images of the pristine electrodes. (a) negative electrode and (b) positive electrode. Images were performed using a FEI/Philips XL4 microscope with
PMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode
Rev. 06 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass
DISCONTINUED PRODUCT FOR REFERENCE ONLY COMPLEMENTARY OUTPUT POWER HALL LATCH 5275 COMPLEMENTARY OUTPUT POWERHALL LATCH FEATURES
5275 POWER HALL LATCH Data Sheet 27632B X V CC 1 SUPPLY ABSOLUTE MAXIMUM RATINGS at T A = +25 C Supply Voltage, V CC............... 14 V Magnetic Flux Density, B...... Unlimited Type UGN5275K latching
Space Settlement Laboratory
Space Settlement Laboratory Resolving the Issues of Space Settlement Rapidly Kent Nebergall Knebergall (at) Gmail. Com MacroInvent.com Copyright 2016, Kent Nebergall The Grand Challenges Launch/LEO Deep
DATA SHEET. PBSS5350T 50 V, 3 A PNP low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Aug 08
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 2002 Aug 08 2004 Jan 13 FEATURES Low collector-emitter saturation voltage V CEsat and corresponding low R CEsat High collector current capability High
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4140DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2001 Dec 13
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low V CEsat NPN/PNP transistor 2001 Dec 13 FEATURES 600 mw total power dissipation Low collector-emitter saturation voltage High
DS1307ZN. 64 X 8 Serial Real Time Clock PIN ASSIGNMENT FEATURES
DS1307 64 8 Serial Real Time Clock FEATURES Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 56 byte nonvolatile
Introduction to Measurement Systems
MFE 3004 Mechatronics I Measurement Systems Dr Conrad Pace Page 4.1 Introduction to Measurement Systems Role of Measurement Systems Detection receive an external stimulus (ex. Displacement) Selection measurement
DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12
DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 23 Aug 12 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to reduced
Electronic Components
Electronic Components Arduino Uno Arduino Uno is a microcontroller (a simple computer), it has no way to interact. Building circuits and interface is necessary. Battery Snap Battery Snap is used to connect
Low voltage products in high altitudes
WHITE PAPER Low voltage products in high altitudes Information and technical guidance for applications above 2000 m sea level This white paper provides information including technical guidance for high
DATA SHEET. PBSS4140V 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS Jun 20. Product specification Supersedes data of 2001 Nov 05
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low V CEsat NPN transistor Supersedes data of 2001 Nov 05 2002 Jun 20 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm x 0.55
Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode
Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode Features Low forward voltage Peak wavelength λp=940nm High reliability This product itself will remain within RoHS compliant version. Descriptions
Getting More From Abaqus by Tackling Noisy and Challenging Data
Smart-Tools for Analyzing Noisy & Challenging Problems Getting More From Abaqus by Tackling Noisy and Challenging Data Snap-Fit Learn how to turn this mess Failure Equipment Performance into success! Drop
DS-CD-01 Rev 3
Coalescers OVERVIEW There are numerous industrial applications requiring effective physical separation of two process liquids. HAT has developed a number of AlphaSEP Coalescers to handle a wide range of
Trans-African Hydro-Meteorological Observatory
Trans-African Hydro-Meteorological Observatory Sensor Design Competition A design by: 1. Kolyanga Emmanuel Email: emmakoly@gmail.com 2. Wogisha Benjamin Email: wogisha@gmail.com Executive Summary Proposal
DATASHEET. Micro Vibration Sensor MVS Revision Mar. 22 Supersedes data of 2010 Dec. 07
DATASHEET Micro Vibration Sensor Revision 2.6 2013 Mar. 22 Supersedes data of 2010 Dec. 07 Sensolute GmbH, 2013 DESCRIPTION FEATURES Omnidirectional vibration sensor Halogen free Wide supply voltage range:
EE-SX1330. Photomicrosensor (Transmissive) Ultra-Compact Slot / SMD Type (Slot width: 3 mm) Ordering Information
Photomicrosensor (Transmissive) EE-SX33 Ultra-Compact Slot / SMD Type (Slot width: 3 mm) PCB surface mounting type. High resolution with a.3-mm-wide aperture. Be sure to read Safety Precautions on page
ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6. SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new 5 th generation low saturation 20V PNP transistor
MTC1 Series Isolated 1W SM 2:1 Input Single Output DC-DC Converters
MTC1 Series SELECTION GUIDE FEATURES UL 95 recognised for reinforced insulation ANSI/AAMI ES1-1, 1 MOPP/ 2 MOOPs recognised 3kVAC isolation test voltage Hi Pot Test Continuous short circuit protection
NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Rev. 5 April 27 Product data sheet. Product profile. General description NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic
Antenna ANTA ANTA PCB Printed
Enclosure ACM ACMi ACMm Wireless range / m 800 m (2,600 ft) 500 m (1,600 ft) Power supply 3-18 Vdc or 2xD cell 3 Vdc (2xAA) 3 Vdc (2xAAA with BB1) Battery life at 1 transmission per second* 1 year 5 months
Real World Applications on Massively Parallel Environments
SC12 Nov. 10-16th, 2012 Real World Applications on Massively Parallel Environments YAMAZAKI, Takashi, Ph.D. Application R&D Division Next Generation Technical Computing Unit Fujitsu Ltd. Contents of Presentation
ph or ORP Transmitter
ph or ORP Transmitter Programmable outputs: two transistor and single or dual analog 4-20 ma (Process + Temp) Removable backlighted display Universal process connection Compatible with 120 mm ph/ ORP probes
DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZX79 series Voltage regulator diodes. Product specification Supersedes data of 1999 May 25.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 25 2002 Feb 27 FEATURES Total power dissipation: max. 500 mw Two tolerance series: ±2%, and approx. ±5% Working voltage range: nom.
UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
ITR1201SR10AR/TR. Features. Description. Applications. Device Selection Guide. Revision 1. LifecyclePhase: Expired Period: Forever
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Description is a light reflection switch which
ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR
ZXT11N20DF SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =20V; R SAT = 40m ;I C = 2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix
Technical Data Sheet Opto Interrupter
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Descriptions is a light reflection switch which
DATA SHEET. PUMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 May 6.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP general purpose transistors Supersedes data of 2002 May 6 2004 Oct 15 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V) Reduces
DATA SHEET. Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation
DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain S21e 2 =.5 dbtyp. @,
Micro Vibration Sensor Datasheet
Micro Vibration Sensor Datasheet DESCRIPTION FEATURES Omnidirectional vibration sensor Wide supply voltage range: 1.80 V to 15 V Low operating current (e.g. Icc max. 0.2µA at Vcc 2V and R 10Meg) (e.g.
Industrial Sensors. Proximity Mechanical Optical Inductive/Capacitive. Position/Velocity Potentiometer LVDT Encoders Tachogenerator
Proximity Mechanical Optical Inductive/Capacitive Position/Velocity Potentiometer LVDT Encoders Tachogenerator Force/Pressure Vibration/acceleration Industrial Sensors 1 Definitions Accuracy: The agreement
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
60 V, 1 A PNP medium power transistors
Rev. 8 25 February 28 Product data sheet. Product profile. General description PNP medium power transistor series. Table. Product overview Type number [] Package NPN complement NXP JEITA JEDEC BCP52 SOT223
Dual N-Channel Enhancement Mode Field Effect Transistor
Description The is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize
DS V EconoReset PIN ASSIGNMENT FEATURES PIN DESCRIPTION PIN 1 GROUND PIN 2 RESET PIN 3 V CC PIN 4 GROUND (SOT 223 ONLY)
5V EconoReset FEATURES Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch PIN ASSIGNMENT DALLAS Econo Reset
UNISONIC TECHNOLOGIES CO., LTD UB24205 Preliminary CMOS IC
UNISONIC TECHNOLOGIES CO., LTD UB24205 Preliminary CMOS IC LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION The UTC UB24205 is a lithium-ion / lithium-polymer rechargeable battery protection IC with
ITR20510/TR8. Features. Description. Applications. Expired Period: Forever. LifecyclePhase:
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Description TR20510/TR8 is a light reflection
Basic Electrical Principles for Self Winding Clocks
Basic Electrical Principles for Self Winding Clocks Ken Reindel NAWCC Chapter 15 1 Objective To de-mystify electrical principles Enrich Understanding Technical How self-winding technology came into being
DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 NPN/PNP general purpose transistor Supersedes data of 1999 Apr 26 2001 Oct 26 FEATURES Low collector capacitance Low collector-emitter saturation
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR FCX705 SUMMARY V CEO =120V; V CE(sat) = 1.3V; I C = -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance
DS1307ZN. 64 X 8 Serial Real Time Clock
64 X 8 Serial Real Time Clock www.dalsemi.com FEATURES Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 56
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
RAY MC COMPACT ENERGY METER MECHANICAL
APPLICATION Fully electronic measuring capsule heat meter, heat and cooling meter or cooling meter with impeller scanning for volume measuring and energy calculation. Highly accurate recording of all billing
UNISONIC TECHNOLOGIES CO., LTD 2SC5305
UNISONIC TECHNOLOGIES CO., LTD 2SC535 HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In
ZXTDE4M832. MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LO SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor V CEO = 80V; R SAT = 68m ; C = 3.5A PNP Transistor V CEO = -70V; R SAT = 117m ;
Technical Data Sheet Opto Interrupter
Technical Data Sheet Opto Interrupter Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Descriptions
SUBELEMENT T6 Electrical components: semiconductors; circuit diagrams; component functions 4 Exam Questions - 4 Groups
SUBELEMENT T6 Electrical components: semiconductors; circuit diagrams; component functions 4 Exam Questions - 4 Groups 1 T6A Electrical components: fixed and variable resistors; capacitors and inductors;
ITR1201SR10AR/TR. Features. Description. Applications. Device Selection Guide
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Compliance with EU REACH. Compliance Halogen
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC
![BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC](/thumbs/72/67715622.jpg "BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC")
65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family.
PDTDE series NPN 500 ma, 50 V resistor-equipped transistors; R = kω, R = kω Rev. 0 4 April 005 Product data sheet. Product profile. General description 500 ma NPN Resistor-Equipped Transistors (RET) family.
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification.
Shock/Vibration/ Thermal Cycling
National Highway Traffic Safety Administration Shock/Vibration/ Thermal Cycling Nha Nguyen NHTSA 1 Objective/Purpose The purpose of the testing is to stress a rechargeable energy storage system (REESS)
DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N914; 1N914A; 1N914B High-speed diodes. Product specification Supersedes data of 1999 May 26.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 26 2003 Jun 06 FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage:
NPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Rev. 2 October 200 Product data sheet. Product profile. General description NPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD)
PVR100AZ-B series. Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement
Rev. 1 16 November 26 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457
FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =80V; R SAT = 90m ;I C = 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Rev. 2 4 October 200 Product data sheet. Product profile. General description NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD)
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistors Supersedes data of 2001 Sep 25 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 1.2 mm ultra thin package
Electronic Instrumentation and Measurements
Electronic Instrumentation and Measurements A fundamental part of many electromechanical systems is a measurement system that composed of four basic parts: Sensors Signal Conditioning Analog-to-Digital-Conversion
ABSTRACT INTRODUCTION
COMPASS-1 PICOSATELLITE: STRUCTURES & MECHANISMS Marco Hammer, Robert Klotz, Ali Aydinlioglu Astronautical Department University of Applied Sciences Aachen Hohenstaufenallee 6, 52064 Aachen, Germany Phone:
Portfolio. and ULTRAWATER. Ultrasonic Static Meters. Ultrasonic Meters Residential and District Heating/ Cooling Water Measurement
Ultrasonic Meters Residential and District Heating/ Cooling Water Measurement Ultrasonic Static Meters Portfolio ULTRAHEAT/ ULTRACOLD and ULTRAWATER The best of Landis+Gyr Ultrasonic Static Meters, for
Electric Circuits Notes 1 Circuits
Electric Circuits Notes 1 Circuits In the last chapter we examined how static electric charges interact with one another. These fixed electrical charges are not the same as the electricity that we use
ITR8307/L24/TR8. Description. Applications. Device Selection Guide.
Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free This product itself will remain within RoHS compliant version. Compliance with EU REACH. Compliance Halogen
LM219/LM319 Dual voltage comparator INTEGRATED CIRCUITS. Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Handbook
INTEGRATED CIRCUITS Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Handbook 21 Aug 3 DESCRIPTION The series are precision high-speed dual comparators fabricated on a single monolithic
BC635; BCP54; BCX V, 1 A NPN medium power transistors
45 V, A NPN medium power transistors Rev. 7 4 June 7 Product data sheet. Product profile. General description NPN medium power transistor series. Table. Product overview Type number [] Package PNP complement
Technical Data Sheet Opto Interrupter
Technical Data Sheet Opto Interrupter Features Fast response time High analytic High sensitivity Cut-off visible wavelength λ P =940nm Pb Free This product itself will remain within RoHS compliant version.
ITk silicon strips detector test beam at DESY
ITk silicon strips detector test beam at DESY Lucrezia Stella Bruni Nikhef Nikhef ATLAS outing 29/05/2015 L. S. Bruni - Nikhef 1 / 11 Qualification task I Participation at the ITk silicon strip test beams
Package Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
DS1633. High Speed Battery Recharger PIN ASSIGNMENT TO 220 FEATURES. PIN DESCRIPTION V CC Supply Voltage V BAT Battery Output GND Ground
DS1633 High Speed Battery Recharger FEATURES Recharges Lithium, NiCad, NiMH and Lead acid batteries Retains battery and power supply limits in onboard memory PIN ASSIGNMENT TO 220 + Serial 1 wire interface
PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD)
DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2222; PMBT2222A NPN switching transistors. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 22 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification. PINNING PIN 1
DL/N 70. Datalogger CUSTOMER BENEFITS
Datalogger DL/N 70 CUSTOMER BENEFITS Multi-parameter probe: pressure, temperature and conductivity Can be installed into 2'' piezoelectric tubes Inundation-resistant battery housing Available with miniature
White paper. Exploring metal finishing methods for 3D-printed parts
01 Exploring metal finishing methods for 3D-printed parts 02 Overview Method tested Centrifugal disc Centrifugal barrel Media blasting Almost all metal parts whether forged, stamped, cast, machined or
RM36. Rotation sensors RM36 Absolute rotary encoder
Rotation sensors RM36 Absolute rotary encoder RM36 Description The RM36 is a high-speed magnetic rotary encoder designed for use in harsh industrial environments. The non-contact two-part design removes
Technical Data Sheet Opto Interrupter
Technical Data Sheet Opto Interrupter Features Fast response time High analytic Peak wavelength λp=94nm High sensitivity Pb free This product itself will remain within RoHS compliant version. DS-31MM Descriptions
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
Size : Connection Ends : Min Temperature : Max Temperature : Materials : Cast iron body
Size : Connection Ends : Min Temperature : Max Temperature : DN 50 to 200 Flanged ISO PN 10/16 ( ISO PN16 for DN200 ) 0 C + 50 C Max Pressure : 16 Bars Specifications : Tangential type Dry dial Magnetic
Units 1,2,3,9,12 Delmars Standard Textbook of Electricity
Units 1,2,3,9,12 Delmars Standard Textbook of Electricity 1. What are the two basic types of electric sources? 2. What is the effect of unlike charges on each other? 3. What is the effect of like charges
NCS1 Series Isolated 1W 4:1 Input Single Output DC/DC Converters
NCS1 Series SELECTION GUIDE FEATURES UL 9 recognised 4:1 Wide range voltage input Operating temperature range -4 C to 15 C with derating 1kVDC Isolation Hi Pot Test 3.3V, 5V & 12V outputs No electrolytic
PSMN026-80YS. N-channel LFPAK 80 V 27.5 mω standard level MOSFET
Rev. 1 25 June 9 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide
APPLICATION NOTE 6381 ORGANIC LAND GRID ARRAY (OLGA) AND ITS APPLICATIONS
Keywords: OLGA, SMT, PCB design APPLICATION NOTE 6381 ORGANIC LAND GRID ARRAY (OLGA) AND ITS APPLICATIONS Abstract: This application note discusses Maxim Integrated s OLGA and provides the PCB design and