MCNA ingle N-Channel MOFET DECRIPTION MC is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. FEATURE VD = V, ID = A RD(ON)=.7mΩ(Typ.)@VG=V RD(ON)=.mΩ(Typ.)@VG=.V RD(ON)=.mΩ(Typ.)@VG=.V RD(ON)=6.6mΩ(Typ.)@VG=.8V % UI and Rg tested PART NUMBER INFORMATION APPLICATION MC NA - TR G a b c d e a : Company name. b : Product erial number. c : Package code NA:DFN.X.A-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoH Compliant Power Management POL Applications Battery Powered ystems Pin D D D D G DFN.X.A-8 G D ABOLUTE MAXIMUM RATING (TA = C Unless otherwise noted ) ymbol Parameter Rating Units VD Drain-ource Voltage V VG Gate-ource Voltage ± V ID Pulsed Drain Current G TC= C A TC= C A IDM Pulsed Drain Current A A ID Continuous Drain Current TA= C A TA=7 C 8. A PD Power Dissipation B TA= C.6 W TA=7 C. W IA Avalanche Current A A EA ingle Pulse Avalanche energy L=.mH AF 6 mj PD Power Dissipation C TC= C W TC= C. W TJ Operation Junction Temperature -/ C TTG torage Temperature Range -/ C THERMAL REITANCE ymbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s Thermal Resistance Junction to Ambient BD 6 C/W teady-tate RθJC Thermal Resistance Junction to Case
ELECTRICAL CHARACTERITIC(TA = C Unless otherwise noted ) MCNA ymbol Parameter Condition Min Typ Max Unit tatic Parameters BVD Drain-ource Breakdown Voltage VG=V, ID=μA V VG(th) Gate Threshold Voltage VD=VG, ID=μA..6 V IG Gate Leakage Current VD=V, VG=±V ± na ID Zero Gate Voltage Drain Current VD=V, VG=V, TJ= C VD=6V, VG=V, TJ=7 C μa VG=V, ID=A.7. Drain-source On-Resistance E VG=.V, ID=A.. VG=.V, ID=A.. mω VG=.8V, ID=A 6.6 8.8 Gfs Forward Transconductance VD=V, ID=A RD(ON) Diode Characteristics VD Diode Forward Voltage E I=A,VG=V.7 V I Continuous ource Current G A trr Reverse Recovery Time 9 ns I=A, dl/dt=a/μs Qrr Reverse Recovery Charge 9. nc Dynamic and witching Parameters Qg Total Gate Charge Qgs Gate-ource Charge VD=V,VG=.V, ID=A. 7. Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance VD=V, VG=V, f=mhz 7 Crss Reverse Transfer Capacitance Rg Gate Resistance VG=V, VD=V, F=MHZ.. Ω td(on).7 Turn-On Time E tr VDD=V, VG=.V,. 9 td(off) RG=Ω, ID=A 8 6 Turn-Off Time E tf 7 7 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)= C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)= C (initial temperature TA= C). C. TJ(MAX)= C,using junction-to-ambient thermal resistance, t sec. D. TJ(MAX)= C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The data tested by pulsed, pulse width µ, duty cycle %. F. The EA data shows Max, tested and pulse width limited by TJ(MAX)= C (initial temperature TJ= C). G. The maximum current rating is limited by package. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. pf n
Normalized Threshold Voltage Ptot-Power(W) VG(V) Capacitance(pF) RD(ON)(mΩ) MCNA TYPICAL CHARACTERITIC VG=.V VG=V VG=.V 9 TA= C 7 VG=V 8 7 6 VG=.8V VG=.V VG=.V VG=.V VG=V VD-Drain ource Voltage(V) Output Characteristics Drain-ource On Resistance VD=V ID=V Ciss Qg-Gate Charge(nC) Gate Charge Crss Coss VD-Drain ource Voltage(V) Capacitance....9.7.. - - 7 Gate Threshold Voltage 7 Power Dissipation
Normalized Transient Thermal Resistance Normalized On Resistance MCNA TYPICAL CHARACTERITIC.6 Tc= C.. VG=.V.8.6 7 RD(ON) vs Junction Temperature 7 TC-Case Temperature( C) Drain Current vs TC TC= C µs ID (A) DC ms ms ms.. Duty=...... t ingle Pulse... VD Voltage (V) Maximum afe Operation Area..... quare Wave Pulse Duration(ec) Thermal Transient Impedance t Duty Cycle, D=t/t VG Ton Toff V Qg VD Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VG Gate Chrge Waveform witching Time Waveform
MCNA DFN.X.A-8 PACKAGE DIMENION ymbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.7.8.8. b.... c.... D.... D...8.6 D.78.98.7.78 D -. -. E...6. E...8.6 E.9.9.9. e.6bc..6bc. H.... L.... L -. -. M -. -.6 Ɵ Recommended Land Pattern