MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. PART NUMBER INFORMATION MC 86 NA - TR G a b c d e a : Company name. b : Product erial number. c : Package code NA:DFN3.3X3.3A-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoH Compliant FEATURE VD = 3V, ID = 5A RD(ON)=3.3mΩ(Typ.)@VG= V RD(ON)=.5mΩ(Typ.)@VG=.5V % UI and Rg tested APPLICATION Battery Charging VGA / Vcore Battery Pack Pin D D D D G DFN3.3X3.3A-8 G D ABOLUTE MAXIMUM RATING (TA = 5 C Unless otherwise noted ) ymbol Parameter Rating Units VD Drain-ource Voltage 3 V VG Gate-ource Voltage ± V TC=5 C 5 A ID Continuous Drain Current G TC=C.3 A IDM Pulsed Drain Current A A ID PD Continuous Drain Current Power Dissipation B TA=5 C A TA=7 C 7 A TA=5 C 3. W TA=7 C W IA Avalanche Current A 36 A EA ingle Pulse Avalanche energy L=.mH AF 6 mj PD Power Dissipation C TC=5 C 9 W TC= C W TJ Operation Junction Temperature -55/5 C TTG torage Temperature Range -55/5 C THERMAL REITANCE ymbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s Thermal Resistance Junction to Ambient BD 6 C/W teady-tate RθJC Thermal Resistance Junction to Case. MC86NA Rev.A
ELECTRICAL CHARACTERITIC(TA = 5 C Unless otherwise noted ) MC86NA ymbol Parameter Condition Min Typ Max Unit tatic Parameters BVD Drain-ource Breakdown Voltage VG=V, ID=5μA 3 V VG(th) Gate Threshold Voltage VD=VG, ID=5μA..6.5 V IG Gate Leakage Current VD=V, VG=±V ± na ID Zero Gate Voltage Drain Current VD=3V, VG=V, TJ=5 C VD=V, VG=V, TJ=75 C μa Drain-source On-Resistance E VG=V, ID=A 3.3.5 VG=.5V, ID=5A.5 6 mω Gfs Forward Transconductance VD=V, ID=A 36 RD(ON) Diode Characteristics VD Diode Forward Voltage E I=A, VG=V.7 V I Continuous ource Current G 36 A Trr Reverse Recovery Time 3 ns I=A, dl/dt=a/μs Qrr Reverse Recovery Charge 3 nc Dynamic and witching Parameters Qg Total Gate Charge (V) 3.9.7 Qg Total Gate Charge (.5V) 5 VD=5V, VG=V, ID=A Qgs Gate-ource Charge 5. 7.3 Qgd Gate-Drain Charge 6 8. Ciss Input Capacitance 3 Coss Output Capacitance VD=5V, VG=V, f=mhz 95 Crss Reverse Transfer Capacitance 88 Rg Gate Resistance VG=V, VD=V, F=MHZ.9.9 Ω td(on) 7 Turn-On Time E tr VDD=5V, VGEN=V, td(off) RG=3Ω, ID=A 78 Turn-Off Time E tf.6 8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)=5 C (initial temperature TA=5 C). C. TJ(MAX)=5 C,using junction-to-ambient thermal resistance, t sec. D. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The data tested by pulsed, pulse width 3µ, duty cycle %. F. The EA data shows Max, tested and pulse width limited by TJ(MAX)=5 C (initial temperature TJ=5 C). G. The maximum current rating is limited by package. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf ns MC86NA Rev.A
Normalized Threshold Voltage Ptot-Power(W) VG(V) Capacitance(pF) RD(ON)(mΩ) MC86NA TYPICAL CHARACTERITIC 8 5 VG=.5V VG=5V VG=V 8 TA=5 C 6 9 6 3 VG=V VG=3V VG=V VG=.5V VG=.5V 3 5 5 5 5 3 VD-Drain ource Voltage(V) Output Characteristics Drain-ource On Resistance 8 6 VD=5V ID=A 3 5 Ciss 5 5 Coss 5 5 5 3 Qg-Gate Charge(nC) Gate Charge Crss 5 5 5 3 VD-Drain ource Voltage(V) Capacitance. 3. 5 TC=5 C.9.8 5.7.6 5.5-5 -5 5 5 75 5 5 Gate Threshold Voltage 3 6 9 5 Power Dissipation MC86NA Rev.A 3
Normalized Transient Thermal Resistance Normalized On Resistance MC86NA TYPICAL CHARACTERITIC.6 5 Tc=5 C.. 3 VG=V.8.6 5 5 75 5 5 RD(ON) vs Junction Temperature 5 5 75 5 5 TC-Case Temperature( C) Drain Current vs TC TC=5 C µs ID (A) µs ms ms ms DC.. Duty=.5...5.. t ingle Pulse... VD Voltage (V) Maximum afe Operation Area..... quare Wave Pulse Duration(ec) Thermal Transient Impedance t Duty Cycle, D=t/t VG Ton Toff V Qg VD Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VG Gate Chrge Waveform witching Time Waveform MC86NA Rev.A
MC86NA DFN3.3X3.3A-8 PACKAGE DIMENION ymbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.7.8.8.3 b.5.35.. c..5.. D 3.3 3..3.3 D 3.5 3.5.8.36 D.78.98.7.78 D3 -.3 -.5 E 3. 3..6.3 E 3. 3..8.6 E.39.59.9. e.65bc..6bc. H.3.5.. L.3.5.. L -.3 -.5 M -.5 -.6 Ɵ 5 Recommended Land Pattern MC86NA Rev.A 5