l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, P, etc. IRF7526 MOSFET & Schottky iode 8 7 6 K K P -9649C V SS = -30V R S(on) = 0.20Ω Schottky Vf = 0.39V The new Micro8 TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro8 TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCI cards. Micro8 TM bsolute Maximum Ratings Parameter Maximum Units I @ T = 25 C -2.0 Continuous rain Current, V I @ T = 70 C GS @ -4.5V -.6 I M Pulsed rain Current ➀ -6 P @T = 25 C.25 Power issipation P @T = 70 C 0.8 W Linear erating Factor 0 mw/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt ➁ -5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to +50 C Thermal Resistance Ratings Parameter Maximum Units R θj Junction-to-mbient ➃ 00 C/W Notes: Repetitive rating pulse width limited by max. junction temperature (see Fig. 9) I S -.2, di/dt 60/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs duty cycle 2% When mounted on inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com 5/7/99
IRF7526 MOSFET Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -30 V V GS = 0V, I = -250µ R 0.7 0.20 V GS = -0V, I = -.2 ƒ S(on) Static rain-to-source On-Resistance Ω 0.30 0.40 V GS = -4.5V, I = -0.60 ƒ V GS(th) Gate Threshold Voltage -.0 V V S = V GS, I = -250µ g fs Forward Transconductance 0.94 S V S = -0V, I = -0.60 -.0 V S = -24V, V GS = 0V I SS rain-to-source Leakage Current µ -25 V S = -24V, V GS = 0V, T J = 25 C I Gate-to-Source Forward Leakage -00 V GS = -20V GSS n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge 7.5 I = -.2 Q gs Gate-to-Source Charge.3.9 nc V S = -24V Q gd Gate-to-rain ("Miller") Charge 2.5 3.7 V GS = -0V, See Fig. 6 ƒ t d(on) Turn-On elay Time 9.7 V = -5V t r Rise Time 2 I = -.2 ns t d(off) Turn-Off elay Time 9 R G = 6.2Ω t f Fall Time 9.3 R = 2Ω, ƒ C iss Input Capacitance 80 V GS = 0V C oss Output Capacitance 87 pf V S = -25V C rss Reverse Transfer Capacitance 42 ƒ =.0MHz, See Fig. 5 MOSFET Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current(Body iode) -.25 I SM Pulsed Source Current (Body iode) -9.6 V S Body iode Forward Voltage -.2 V T J = 25 C, I S = -.2, V GS = 0V t rr Reverse Recovery Time (Body iode) 30 45 ns T J = 25 C, I F = -.2 Q rr Reverse Recovery Charge 37 55 nc di/dt = 00/µs ƒ Schottky iode Maximum Ratings Parameter Max. Units Conditions I F(av) Max. verage Forward Current.9 50% uty Cycle. Rectangular Wave, T = 25 C.3 See Fig. 4 T = 70 C I SM Max. peak one cycle Non-repetitive 20 5µs sine or 3µs Rect. pulse Following any rated Surge current 0ms sine or 6ms Rect. pulse load condition & with V RRM applied Schottky iode Electrical Specifications Parameter Max. Units Conditions V FM Max. Forward voltage drop 0.50 I F =.0, T J = 25 C 0.62 I F = 2.0, T J = 25 C V 0.39 I F =.0, T J = 25 C 0.57 I F = 2.0, T J = 25 C. I RM Max. Reverse Leakage current 0.06 V R = 30V T J = 25 C m 6 T J = 25 C C t Max. Junction Capacitance 92 pf V R = 5Vdc ( 00kHz to MHz) 25 C dv/dt Max. Voltage Rate of Charge 3600 V/µs Rated V R ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com
IRF7526 Power Mosfet Characteristics -I, rain-to-source Current () 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V -I, rain-to-source Current () 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V 20µs PULSE WITH T J = 25 C 0. 0. 0 -V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 50 C 0. 0. 0 -V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I, rain-to-source Current () 0 0. T J = 25 C T J = 50 C V S = -0V 20µs PULSE W ITH 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (N orm alized) 2.0.5.0 0.5 I = -.2 V GS = -0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
IRF7526 Power Mosfet Characteristics C, Capacitance (pf) 400 300 200 00 C iss C oss C rss V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd 0 0 00 -V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I = -.2 V S = -24V V S = -5V FOR TEST CIRCUIT 0 SEE FIGURE 9 0 2 4 6 8 0 2 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 0 0. T J = 50 C T J = 25 C V GS = 0V 0.4 0.6 0.8.0.2.4 -V S, Source-to-rain Voltage (V) -I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00µs ms 0ms T = 25 C T J = 50 C Single P u lse 0. 0 00 -V, rain-to-source Voltage (V) S Fig 7. Typical Source-rain iode Fig 8. Maximum Safe Operating rea Forward Voltage 4 www.irf.com
IRF7526 Power Mosfet Characteristics 000 Thermal Response (Z thjc ) 00 = 0.50 0.20 0 0.0 0.05 0.02 PM 0.0 t SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thjc + TC 0. 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-mbient RS (on), rain-to-source On Resistance (Ω).5.0 0.5 VGS = -4.5V VGS = -0V 0.0 0 2 3 4 RS (on), rain-to-source On Resistance (Ω) 0.60 0.50 0.40 0.30 0.20 I = -2.0 0.0 3 6 9 2 5 -I, rain Current () -V GS, G ate-to-source Voltage (V) Fig 0. Typical On-Resistance Vs. rain Current Fig. Typical On-Resistance Vs. Gate Voltage www.irf.com 5
IRF7526 Schottky iode Characteristics 0 00 0 T J = 50 C Instantaneous Forward Current - I F () T J = 50 C T J = 25 C T J = 25 C 0. 0.0 0.2 0.4 0.6 0.8.0 Forward Forward Voltage rop - V FM (V) F (V) Fig. 2 -Typical Forward Voltage rop Characteristics Reverse Current - IR (m) llowable mbient Temperature - ( C) 0. 0.0 0.00 25 C 00 C 75 C 50 C 25 C 0.000 0 5 0 5 20 25 30 60 40 20 00 80 60 40 20 Reverse Voltage - V R (V) Fig. 3 - Typical Values of Reverse Current Vs. Reverse Voltage = 3/4 = /2 =/3 = /4 = /5 V r = 80% Rated R thj = 00 C /W Square wave C 0 0.0 0.5.0.5 2.0 2.5 3.0 verage Forward Current - I F(V) () Fig.4 - Maximum llowable mbient Temp. Vs. Forward Current 6 www.irf.com
Micro8 TM Package etails 3 E - - e 6X - B - 8 7 6 5 2 3 4 3 e - C - B 8X 0.08 (.003) M C S B S H 0.25 (.00) M M 0.0 (.004) θ LE SSIGNMENTS SINGLE L 8X 2 2 8 7 6 5 8 7 6 5 UL 2 3 4 2 3 4 S S S G S G S2 G2 C 8X INCHES MILLIMETERS IM MIN MX MIN MX.036.044 0.9..004.008 0.0 0.20 B.00.04 0.25 0.36 C.005.007 0.3 0.8.6.20 2.95 3.05 e.0256 BSIC 0.65 BSIC e.028 BSIC 0.33 BSIC E.6.20 2.95 3.05 H.88.98 4.78 5.03 L.06.026 0.4 0.66 θ 0 6 0 6.04 (.04 ) 8X RECOMMENE FOOTPRINT 3.20 (.26 ) 0.38 (.05 ) 8X 4.24 5.28 (.67 ) (.208 ) IRF7526 Part Marking NOTES: IMENSIONING N TOLERNCING PER NSI Y4.5M-982. 2 CONTROLLING IMENSION : INCH. 3 IMENSIONS O NOT INCLUE MOL FLSH. 0.65 (.0256 ) 6X www.irf.com 7
IRF7526 Micro8 TM Tape & Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. OUTLINE CONFORMS TO EI-48 & EI-54. 2. CONTROLLING IMENSION : MILLIMETER. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) 322 333 IR GRET BRITIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 883 732020 IR CN: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: ++ 49 672 96590 IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: ++ 39 45 0 IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 22 837 IR TIWN:6 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ ata and specifications subject to change without notice. 5/99 8 www.irf.com