P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription New trench HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S S S G 8 2 7 3 6 4 5 Top View SO-8 bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -40 V I @ T = 25 C Continuous rain Current, V GS @ -0V -6.2 I @ T = 70 C Continuous rain Current, V GS @ -0V -4.9 I M Pulsed rain Current -25 P @T = 25 C Power issipation ƒ 2.5 P @T = 70 C Power issipation ƒ.6 W Linear erating Factor 20 mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient ƒ 50 C/W www.irf.com /26/0
IRF724 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -40 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.03 V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance 25 4 V GS = -0V, I = -6.2 mω 45 70 V GS = -4.5V, I = -5.0 V GS(th) Gate Threshold Voltage -.0-3.0 V V S = V GS, I = -250µ g fs Forward Transconductance 8.9 S V S = -0V, I = -6.2 I SS rain-to-source Leakage Current -0 V S = -32V, V GS = 0V µ -25 V S = -32V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge 53 80 I = -6.2 Q gs Gate-to-Source Charge 4 2 nc V S = -32V Q gd Gate-to-rain ("Miller") Charge 3.9 5.9 V GS = -0V t d(on) Turn-On elay Time 24 V = -20V t r Rise Time 280 I = -.0 ns t d(off) Turn-Off elay Time 20 R G = 6.0Ω t f Fall Time 00 V GS = -0V C iss Input Capacitance 3220 V GS = 0V C oss Output Capacitance 60 pf V S = -25V C rss Reverse Transfer Capacitance 90 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.5 (Body iode) showing the I SM Pulsed Source Current integral reverse G -25 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25 C, I S = -2.5, V GS = 0V t rr Reverse Recovery Time 32 48 ns T J = 25 C, I F = -2.5 Q rr Reverse Recovery Charge 45 68 nc di/dt = -00/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in square Cu board Pulse width 400µs; duty cycle 2%. 2 www.irf.com
-I, rain-to-source Current (Α) IRF724 -I, rain-to-source Current () 000 00 0 0. VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 25 C 0.0 0. 0 00 -V S, rain-to-source Voltage (V) -I, rain-to-source Current () 00 0 VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 50 C 0. 0. 0 00 -V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 00.00 I = -6.2 0.00 T J = 50 C.00 T J = 25 C 0.0 V S = -25V 20µs PULSE WITH 0.0 2.5 3.0 3.5 4.0 4.5 5.0 -V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized).5.0 0.5 V GS = -0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
-I, rain-to-source Current () C, Capacitance(pF) IRF724 5000 4000 3000 2000 000 Ciss Coss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd -V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I = -6.2 V S =-32V V S =-20V 0 Crss 0 00 -V S, rain-to-source Voltage (V) 0 0 20 40 60 80 00 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V 0. 0.4 0.6 0.8.0.2 -V S,Source-to-rain Voltage (V) 00 0 0. Tc = 25 C Tj = 50 C Single Pulse OPERTION IN THIS RE LIMITE BY R S (on) 00µsec msec 0msec 0 0 00 000 -V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
IRF724 8.0 V S R -I, rain Current () 6.0 4.0 2.0 R G V GS V GS Pulse Width µs uty Factor 0. %.U.T. V Fig 0a. Switching Time Test Circuit + - 0.0 25 50 75 00 25 50 T, Case Temperature ( C C) V GS t d(on) t r t d(off) t f 0% Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE Notes: (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thj + T 0. 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S(on), rain-to -Source On Resistance ( Ω) R S (on), rain-to-source On Resistance ( Ω) IRF724 0.0 0.08 0.08 0.06 0.06 V GS = -4.5V 0.04 I = -6.2 0.04 V GS = -0V 0.02 2 6 0 4 8 -V GS, Gate -to -Source Voltage (V) 0.02 0 5 0 5 20 25 -I, rain Current () Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain Current Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. + V S - V G V GS -3m Charge I G I Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
-V GS(th) Gate threshold Voltage (V) Power (W) IRF724 3.0 00 80 2.5 I = -250µ 60 2.0 40 20.5-75 -50-25 0 25 50 75 00 25 50 T J, Temperature ( C ) 0 0.00 0.00 0.00.000 0.000 00.000 Time (sec) Fig 5. Typical Vgs(th) Vs. Junction Temperature Fig 6. Typical Power Vs. Time www.irf.com 7
IRF724 SO-8 Package etails E 6 6X 5 8 7 6 5 2 3 4 e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX.0532.0040.0688.0098.35 0.0.75 0.25 b.03.020 0.33 0.5 c.0075.0098 0.9 0.25 E e e H K L y.89.968.497.574.050 BSIC.27 BSIC.025 BSIC 0.635 BS IC.2284.2440.0099.096.06.050 0 8 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40.27 0 8 e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M-994. 2. CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS -02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RTE. 8X L 7 6.46 [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO YWW XXXX F70 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK LOT COE PRT NUMBER 8 www.irf.com
IRF724 SO-8 Tape and Reel T ER M IN L N U M B E R 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) 252-705 TC Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information./0 www.irf.com 9