Green Product SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max 2.5 @ VGS=V 6V 6 @ VGS=4.5V FETURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. SO-8 BSOLUTE MXIMUM RTINGS (T =25 C unless otherwise noted) Symbol VDS VGS ID IDM ES PD T J, T STG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Single Pulse valanche Energy d Maximum Power Dissipation Operating Junction and Storage Temperature Range c T C =25 C T C =7 C T C =25 C T C =7 C Limit Units 6 V ±2 V 8 5 2 mj 2.5 W.6 W -55 to 5 C THERML CHRCTERISTICS R J Thermal Resistance, Junction-to-mbient 5 C/W Details are subject to change without notice. Dec,9,24
ELECTRICL CHRCTERISTICS (T=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHRCTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=V, ID=25u 6 V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=V u IGSS Gate-Body Leakage Current VGS= ±2V, VDS=V ± n ON CHRCTERISTICS VGS(th) RDS(ON) g FS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VDS=5V, ID=5 b VDS=VGS, ID=25u.6 3 V VGS=V, ID=5 2.5 m ohm VGS=4.5V, ID=4.5 2 6 m ohm 26 S DYNMIC CHRCTERISTICS CISS Input Capacitance 2578 pf VDS=25V,VGS=V COSS Output Capacitance 63 pf f=.mhz CRSS Reverse Transfer Capacitance 28 pf SWITCHING CHRCTERISTICS td(on) tr Rise Time td(off) tf Fall Time Qg Qgs Qgd Turn-On Delay Time Turn-Off Delay Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDD=3V ID= VGS=V RGEN= 6 ohm VDS=3V,ID=5,VGS=V VDS=3V,ID=5,VGS=4.5V VDS=3V,ID=5, VGS=V 39 3 77 32 3.6 5 3.4 7.4 ns ns ns ns nc nc nc nc DRIN-SOURCE DIODE CHRCTERISTICS ND MXIMUM RTINGS VSD Notes Diode Forward Voltage a.pulse Test:Pulse Width < _ us, Duty Cycle < _ %. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting TJ=25 C,L=.5mH,VDD = 3V.(See Figure3) e.mounted on FR4 Board of inch 2, 2oz. VGS=V,IS=5.77.3 V 2 Dec,9,24
8 5 ID, Drain Current() 64 48 32 6 VGS=V VGS=4.5V VGS=3.5V VGS=3V VGS=2.5V ID, Drain Current() 2 9 6 3 Tj=25 C 25 C -55 C.5.5 2 2.5 3 VDS, Drain-to-Source Voltage(V) Figure. Output Characteristics.7.4 2. 2.8 3.5 4.2 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics 3 2.2 RDS(on)(mΩ) 25 2 5 5 VGS=4.5V VGS=V RDS(on), On-Resistance Normalized 2..8.6.4.2. VGS=V ID=5 VGS=4.5V ID=4.5 6 32 48 64 8 25 5 75 25 5 Tj( C ) ID, Drain Current() Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage.6.4.2..8.6.4 VDS=VGS ID=25u.2-5 -25 25 5 75 25 5 BVDSS, Normalized Drain-Source Breakdown Voltage.5..5..95.9 ID=25u.85-5 -25 25 5 75 25 5 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature 3 Dec,9,24
RDS(on)(m ) Ω 48 4 32 24 6 8 75 C ID=5 25 C 25 C Is, Source-drain current() 2 75 C 25 C 25 C 2 4 6 8.3.6.9.2.5 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current C, Capacitance(pF) 3 Ciss 25 2 5 Coss 5 Crss 5 5 2 25 3 VGS, Gate to Source Voltage(V) 8 6 4 2 VDS=3V ID=5 5 5 2 25 3 35 4 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure. Gate Charge Switching Time(ns) Tf TD(on) Tr TD(off ) VDS=3V,ID= VGS=V Rg, Gate Resistance( Ω ) Figure. switching characteristics ID, Drain Current() RDS(ON) Limit. VGS=V Single Pulse T=25 C.. VDS, Drain-Source Voltage(V) DC ms ms Figure 2. Maximum Safe Operating rea s us us 4 Dec,9,24
tp V(BR )DSS V DS L R G 2V tp D.U.T IS. + - V DD I S Unclamped Inductive Test Circuit Figure 3a. Unclamped Inductive Waveforms Figure 3b. Normalized Transient Thermal Resistance..5.2..5.2. Single Pulse. R J (t)=r (t) * R J 2. R J =S ee Datasheet 3. T J M-T = P DM* R J (t) 4. Duty Cycle, D=t/t2...... Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve P DM t t2 5 Dec,9,24
PCKGE OUTLINE DIMENSIONS SO-8 D E 2 e b H h X 45 O L C SYMBOLS MILLIMETERS INCHES MIN MX MIN MX 2 b.35..25.3.75.25.63.5.53.4.49.2.69..64.2 C D E.7 4.8 3.7.25 5. 4..7.89.46..97.57 e.27 REF..5 BSC H 5.8 6.2.228.244 L.4.27.6.5 8 8 h.25.5..2 6 Dec,9,24
SO-8 Tape and Reel Data SO-8 Carrier Tape P D P2 B E2 E E D P T TERMINL NUMBER SECTION - unit: PCKGE SOP 8N 5 K FEEDING DIRECTION B K D D E E E2 P P P2 T 6.5 5.25 2..5 2..55.75 5.5.5 (MIN) +.3..... -. 8.. 4.. 2...3.3 SO-8 Reel W G S V M N K R H UNIT: TPE SIZE REEL SIZE W M N W W H K S G R V 2 33 33 62.5 2.4 +.2 6.8 -.4 2.75 +.5 2..5 7 Dec,9,24
TOP MRKING DEFINITION SO-8 Product No. SamHop Logo XXXXXX PIN Production Year (29 = 9, 2 =...) Production Month (,2 ~ 9,,B,C) Production Date (,2 ~ 9,,B...) Wafer Lot No. SMC internal code No. (,B,C...Z) 8 Dec,9,24