Typical R S(on) (mω), atetosource Voltage (V) l RoHs Compliant l LeadFree (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques P 97240 IRF668TRPbF irectfet Power MOSFET V SS R S(on) R S(on) 30V max ±20V max 2.2mΩ@ 0V 3.4mΩ@ 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 43nC 5nC 4.0nC 46nC 28nC.64V pplicable irectfet Package/Layout Pad (see p.7, 8 for details) irectfet ISOMETRIC SQ SX ST MQ MX MT escription The combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques. pplication note N035 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The balances industry leading onstate resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency CC converters that power high current loads such as the latest generation of microprocessors. The has been optimized for parameters that are critical in synchronous buck converter s SyncFET sockets. bsolute Maximum Ratings Parameter Max. Units V S raintosource Voltage 30 V atetosource Voltage ±20 I @ T C = 25 C Continuous rain Current, @ 0V e 70 I @ T = 25 C Continuous rain Current, VS @ 0V e 30 I @ T = 70 C Continuous rain Current, @ 0V f 24 I M Pulsed rain Current g 240 E S Single Pulse valanche Energy h 20 mj I R valanche Currentg 24 MT 6 5 4 3 T J = 25 C I = 30 6.0 5.0 4.0 3.0 I = 24 V S = 24V V S = 5V 2 2.0 T J = 25 C.0 0 2 3 4 5 6 7 8 9 0 0.0 0 0 20 30 40 50 60, ate to Source Voltage (V) Q Total ate Charge (nc) Fig. Typical OnResistance vs. atetosource Voltage Fig 2. Total ate Charge vs. atetosource Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L = 0.75mH, R = 25Ω, I S = 24. www.irf.com 08/7/07
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS raintosource Breakdown Voltage 30 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 23 mv/ C R S(on) Static raintosource OnResistance.7 2.2 mω 3.4 = 4.5V, I = 24 i (th) ate Threshold Voltage.35.64 2.35 V V S =, I = 250µ (th) / T J ate Threshold Voltage Coefficient 5.7 mv/ C 5.0 V S = 30V, = 0V I SS raintosource Leakage Current.0 µ V S = 24V, = 0V 50 V S = 24V, = 0V, T J = 50 C I SS atetosource Forward Leakage 00 n = 20V atetosource Reverse Leakage 00 = 20V gfs Forward Transconductance 00 S V S = 5V, I = 24 Q g Total ate Charge 43 65 Q gs PreVth atetosource Charge 2 V S = 5V Q gs2 PostVth atetosource Charge 4.0 nc = 4.5V Q gd atetorain Charge 5 23 I = 24 Q godr ate Charge Overdrive 2 See Fig. 4 Q sw Switch Charge (Q gs2 Q gd ) 9 Q oss Output Charge 28 nc V S = 5V, = 0V R ate Resistance.0 2.2 Ω t d(on) TurnOn elay Time 2 V = 5V, = 4.5VÃi t r Rise Time 7 I = 24 t d(off) TurnOff elay Time 27 ns Clamped Inductive Load t f Fall Time 8. See Fig. 5 & 6 C iss Input Capacitance 5640 = 0V C oss Output Capacitance 260 pf V S = 5V C rss Reverse Transfer Capacitance 570 ƒ =.0MHz iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 89 (Body iode) I SM Pulsed Source Current 240 (Body iode)ãg V S iode Forward Voltage 0.78.2 V t rr Reverse Recovery Time 43 65 ns Q rr Reverse Recovery Charge 46 69 nc Conditions = 0V, I = 250µ Reference to 25 C, I = m = 0V, I = 30 i Conditions MOSFET symbol showing the integral reverse pn junction diode. T J = 25 C, I S = 24, = 0V i T J = 25 C, I F = 24 di/dt = 00/µs iãsee Fig. 7 S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. 2 www.irf.com
bsolute Maximum Ratings Parameter Max. Units P @T = 25 C Power issipation e 2.8 P @T = 70 C Power issipation e.8 W P @T C = 25 C Power issipation f 89 T P Peak Soldering Temperature 270 C T J Operating Junction and 40 to 50 T ST Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junctiontombient em 45 R θj Junctiontombient km 2.5 R θj Junctiontombient lm 20 C/W R θjc JunctiontoCase fm.4 R θjpcb JunctiontoPCB Mounted.0 Linear erating Factor e 0.022 W/ C Thermal Response ( Z thj ) 00 0 0. 0.0 0.00 0.000 = 0.50 0.20 0.0 0.05 0.02 0.0 R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ τ 3 2 τ 3 Ci= τi/ri Ci= τi/ri 9.470 06 SINLE PULSE ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc E006 E005 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) Ri ( C/W) τi (sec) 0.6784 0.00086 7.299 0.57756 7.566 8.94 Fig 3. Maximum Effective Transient Thermal Impedance, Junctiontombient R 4 R 4 τ 4 τ 4 τ τ Notes: Used double sided cooling, mounting pad. Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R θ is measured at T J of approximately 90 C. ƒ Surface mounted on in. square Cu Mounted to a PCB with Š Mounted on minimum (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air) www.irf.com 3
C, Capacitance(pF) I, raintosource Current (Α) R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () 000 00 VS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 000 VS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 00 0 2.7V 2.7V 000 60µs PULSE WITH Tj = 25 C 0. 0 00 V S, raintosource Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WITH Tj = 50 C 0 0. 0 00 V S, raintosource Voltage (V).5 Fig 5. Typical Output Characteristics I = 30 = 0V 00 T J = 50 C T J = 25 C 0.0 V S = 0V 60µs PULSE WITH 0..5 2.0 2.5 3.0 3.5 4.0, atetosource Voltage (V) Fig 6. Typical Transfer Characteristics 0.5 60 40 20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature ( C) Fig 7. Normalized OnResistance vs. Temperature 00000 = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0000 C iss C oss 000 C rss 00 0 00 V S, raintosource Voltage (V) Fig 8. Typical Capacitance vs. raintosource Voltage 4 www.irf.com
E S, Single Pulse valanche Energy (mj) I, rain Current () (th) ate threshold Voltage (V) I S, Reverse rain Current () I, raintosource Current () 000.00 000 OPERTION IN THIS RE LIMITE BY R S (on) 00.00 0.00 T J = 50 C 00 00µsec T.00 J = 25 C = 0V 0.0 0.2 0.4 0.6 0.8.0.2 V S, Sourcetorain Voltage (V) Fig 9. Typical Sourcerain iode Forward Voltage 80 0 Tj = 50 C Single Pulse 0msec 0 0 00 000 V S, raintosource Voltage (V) 2.5 T C = 25 C msec Fig 0. Maximum Safe Operating rea 60 40 2.0 20 00 80 60 40 20.5.0 0.5 I = 250µ 0 25 50 75 00 25 50 T C, Case Temperature ( C) Fig. Maximum rain Current vs. Case Temperature 900 800 700 600 0.0 75 50 25 0 25 50 75 00 25 50 T J, Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature I TOP 9.3 BOTTOM 24 500 400 300 200 00 0 25 50 75 00 25 50 Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current www.irf.com 5
Current Regulator Same Type as.u.t. Vds Id 2V.2µF 50KΩ.3µF Vgs.U.T. V S Vgs(th) 3m I I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 4a. ate Charge Test Circuit Fig 4b. ate Charge Waveform 5V tp V (BR)SS V S L RIVER R 20V tp.u.t I S 0.0Ω V I S Fig 5a. Unclamped Inductive Test Circuit Fig 5b. Unclamped Inductive Waveforms L V S V V S 90%.U.T 0% Pulse Width < µs uty Factor < 0.% t d(on) t r t d(off) t f Fig 6a. Switching Time Test Circuit Fig 6b. Switching Time Waveforms 6 www.irf.com
.U.T ƒ Circuit Layout Considerations Low Stray Inductance round Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river ate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period =0V V * R di/dt controlled by R river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * = 5V for Logic Level evices Fig 7. iode Reverse Recovery Test Circuit for NChannel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, MT Outline ƒ (Medium Size Can, Tesignation). Please see irectfet application note N035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. = TE = RIN S = SOURCE S S www.irf.com 7
irectfet Outline imension, MT Outline (Medium Size Can, Tesignation). Please see irectfet application note N035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F H J K L M R P IMENSIONS METRIC IMPERIL 6.25 4.80 3.85 0.35 0.78 0.88.78 0.98 0.63 0.88 2.46 0.66 0.020 0.08 MX 6.35 5.05 3.95 0.45 0.82 0.92.82.02 0.67.0 2.63 0.676 0.080 0.7 0.246 0.89 0.52 0.04 0.03 0.035 0.070 0.039 0.025 0.035 0.097 0.0235 0.0008 0.003 MX 0.250 0.99 0.56 0.08 0.032 0.036 0.072 0.040 0.026 0.039 0.04 0.0274 0.003 0.007 irectfet Part Marking 8 www.irf.com
irectfet Tape & Reel imension (Showing component orientation) NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF668TRPBF). For 000 parts on 7" reel, order IRF668TRPBF COE B C E F H REEL IMENSIONS STNR OPTION (QTY 4800) TR OPTION (QTY 000) METRIC IMPERIL METRIC IMPERIL 330.0 20.2 2.8.5 00.0 2.4.9 MX 3.2 8.4 4.4 5.4 2.992 0.795 0.504 0.059 3.937 0.488 0.469 MX 0.520 0.724 0.567 0.606 77.77 9.06 3.5.5 58.72.9.9 MX 2.8 3.50 2.0 2.0 LOE TPE FEE IRECTION 6.9 0.75 0.53 0.059 2.3 0.47 0.47 MX 0.50 0.53 COE B C E F H 7.90 3.90.90 5.45 5.0 6.50.50.50 IMENSIONS METRIC MX 8.0 4.0 2.30 5.55 5.30 6.70.60 0.3 0.54 0.469 0.25 0.20 0.256 0.059 0.059 IMPERIL MX 0.39 0.6 0.484 0.29 0.209 0.264 0.063 ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) 252705 TC Fax: (30) 2527903 Visit us at www.irf.com for sales contact information. 08/2007 www.irf.com 9