FKD93 % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID V 3mΩ 3A -V 5mΩ -A Description The FKD93 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD93 meet the RoHS and Green Product requirement % EAS guaranteed with full function reliability approved. TO5 Pin Configuration Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage - V VGS Gate-Source Voltage ± ± V ID@TC=5 Continuous Drain Current, VGS @ V 3 - A ID@TC= Continuous Drain Current, VGS @ V - A IDM Pulsed Drain Current - A EAS Single Pulse Avalanche Energy 3 mj IAS Avalanche Current 7. -7. A PD@TC=5 Total Power Dissipation 5 3.3 W TSTG Storage Temperature Range -55 to 5-55 to 5 TJ Operating Junction Temperature Range -55 to 5-55 to 5 Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- /W RθJC Thermal Resistance Junction-Case --- 5 /W
FKD93 N-Channel Electrical Characteristics (T J=5, unless otherwise noted) BVDSS Drain-Source Breakdown Voltage VGS=V, ID=5uA --- --- V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 5, ID=mA ---.3 --- V/ RDS(ON) Static Drain-Source On-Resistance VGS=V, ID=A --- --- 3 VGS=.5V, ID=A --- --- 5 m VGS(th) Gate Threshold Voltage..5.5 V VGS=VDS, ID =5uA VGS(th) VGS(th) Temperature Coefficient --- -.5 --- mv/ IDSS VDS=3V, VGS=V, TJ=5 --- --- Drain-Source Leakage Current ua VDS=3V, VGS=V, TJ=55 --- --- 5 IGSS Gate-Source Leakage Current VGS=±V, VDS=V --- --- ± na gfs Forward Transconductance VDS=5V, ID=A --- --- S Rg Gate Resistance VDS=V, VGS=V, f=mhz ---. 5. Qg Total Gate Charge (.5V) --- 5.5 --- Qgs Gate-Source Charge VDS=V, VGS=.5V, ID=A ---.5 --- nc Qgd Gate-Drain Charge ---.5 --- Td(on) Turn-On Delay Time ---.9 --- Tr Rise Time VDD=V, VGS=V, RG=3.3 ---. --- ns Td(off) Turn-Off Delay Time ID=A --- --- Tf Fall Time ---.7 --- Input Capacitance --- 593 --- Coss Output Capacitance VDS=5V, VGS=V, f=mhz --- 7 --- pf Crss Reverse Transfer Capacitance --- 5 --- Diode Characteristics IS Continuous Source Current,5 --- --- 3 A VG=VD=V, Force Current ISM Pulsed Source Current,5 --- --- A VSD Diode Forward Voltage VGS=V, IS=A, TJ=5 --- ---. V Note :.The data tested by surface mounted on a inch FR- board with OZ copper..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD=5V,V GS=V,L=.mH,I AS=7.A.The power dissipation is limited by 5 junction temperature 5.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation.
FKD93 P-Channel Electrical Characteristics (T J=5, unless otherwise noted) BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-5uA - --- --- V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 5, ID=-mA --- -. --- V/ RDS(ON) Static Drain-Source On-Resistance VGS=-V, ID=-A --- --- 5 VGS=-.5V, ID=-A --- --- 7 m VGS(th) Gate Threshold Voltage -. -. -.5 V VGS=VDS, ID =-5uA VGS(th) VGS(th) Temperature Coefficient ---.3 --- mv/ IDSS VDS=-3V, VGS=V, TJ=5 --- --- Drain-Source Leakage Current ua VDS=-3V, VGS=V, TJ=55 --- --- 5 IGSS Gate-Source Leakage Current VGS=±V, VDS=V --- --- ± na gfs Forward Transconductance VDS=-5V, ID=-A ---. --- S Rg Gate Resistance VDS=V, VGS=V, f=mhz --- 3 Qg Total Gate Charge (-.5V) --- 9 --- Qgs Gate-Source Charge VDS=-V, VGS=-.5V, ID=-A ---.5 --- nc Qgd Gate-Drain Charge --- 3. --- Td(on) Turn-On Delay Time --- 9. --- Tr Rise Time VDD=-5V, VGS=-V, RG=3.3, ---. --- ns Td(off) Turn-Off Delay Time ID=-A ---. --- Tf Fall Time ---. --- Input Capacitance --- --- Coss Output Capacitance VDS=-5V, VGS=V, f=mhz --- --- pf Crss Reverse Transfer Capacitance --- --- Diode Characteristics IS Continuous Source Current,5 --- --- - A VG=VD=V, Force Current ISM Pulsed Source Current,5 --- --- - A VSD Diode Forward Voltage VGS=V, IS=-A, TJ=5 --- --- - V Note :.The data tested by surface mounted on a inch FR- board with OZ copper..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD=-5V,V GS=-V,L=.mH,I AS=-7.A.The power dissipation is limited by 5 junction temperature 5.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation. 3
FKD93 N-Channel Typical Characteristics I D =A V GS =V ID Drain Current (A) V GS =7V V GS =5V V GS =.5V V GS =3V RDSON(mΩ) 35 3 5.5.5 V DS Drain-to-Source Voltage (V) V GS (V) Fig. Typical Output Characteristics Fig. On-Resistance vs. G-S Voltage IS Source Current(A) T J =5 T J =5..5.5.75. V SD, Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse VGS Gate to Source Voltage (V) V DS =V I D =A Q G, Total Gate Cha Fig. Gate-Charge Characteristics.. Normalized VGS(th).. Normalized On Resistance.7....5. -5 5 5 T J,Junction Temperature ( ). -5 5 5 T J, Junction Temperature ( ) Fig.5 Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J
FKD93 F=.MHz us Capacitance (pf) Coss Crss 5 9 3 7 5 V DS Drain to Source Voltage (V) ID (A) T C =5 Single Pulse us ms ms DC. V DS (V) Fig.7 Capacitance Fig. Safe Operating Area Normalized Thermal Response (Rthjc).. DUTY=.5.3..5.. SINGLE PULSE..... t, Pulse Width (s) PDM Ton D = Ton/T Tj peak = TC + PDM x Rthjc T Fig.9 Normalized Maximum Transient Thermal Impedance V DS 9% EAS= BV DSS L x I AS x BV DSS BV DSS -V DD V DD % I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Wave 5
FKD93 P-Channel Typical Characteristics -ID Drain Current (A) V GS =-V V GS =-7V V GS =-5V V GS =-.5V V GS =-3V RDSON(mΩ 55 5 5 I D =- 35.5.5 -V DS Drain-to-Source Voltage (V) 3 -V GS (V) Fig. Typical Output Characteristics Fig. On-Resistance v.s Gate-Source -IS Source Current(A) T J =5 T J =5.... -V SD, Source-to-Drain Voltage (V) -VGS Gate to Source Voltage (V) V DS =-V I D =-A Q G, Total Gate Cha Fig.3 Forward Characteristics of Reverse Fig. Gate-Charge Characteristics.5. Normalized -VGS(th).5 Normalized On Re.5. -5 5 5 T J,Junction Temperature ( ).5-5 5 5 T J, Junction Temper ) Fig.5 Normalized V GS(th) v.s T J Fig. Normalized R DSON v.s T J
FKD93 F=.MHz. Capacitance (pf) Coss Crss 5 9 3 7 5 -V DS Drain to Source Voltage(V) Fig.7 Capacitance -ID (A).... Tc=5 o C Single Pulse us ms ms ms DC. -V DS (V) Fig. Safe Operating Area Normalized Thermal Response (RθJC). DUTY=.5.3..5.. SINGLE PULSE...... t, Pulse Width (s) P DM T ON D = T ON /T Fig.9 Normalized Maximum Transient Thermal Impedance T T J peak = T C + P DM x R θjc Fig. Switching Time Waveform Fig. Unclamped Inductive Waveform 7