N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -. +. SOT--.9 -. +.. -. +..9 -. +..9 -. +. +. -..6 -..68 -. +.. -. +... Unit: mm. Gate. Source. Drain. -. +. G S Absolute Maximum Ratings Ta = Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-ambient Thermal Resistance.Junction- to-foot Junction Temperature Storage Temperature Range Symbol Rating Unit VDS VGS ± Tc=.6 Tc=7. ID Ta=. Ta=7. IDM Tc=. Tc=7. PD Ta=. Ta=7.8 RthJA RthJF 6 V A W /W TJ Tstg - to
Electrical Characteristics Ta = Parameter Symbol Test Conditio Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=μA, VGS=V V Zero Gate Voltage Drain Current IDSS VDS=V, VGS=V ua VDS=V, VGS=V, TJ=7 Gate-Body Leakage Current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS, ID=uA.. V Static Drain-Source On-Resistance VGS=V, ID=.A VGS=.V, ID=.9A On State Drain Current ID(ON) VDS V, VGS=V A Forward Traconductance gfs VDS=V, ID=.A 7 S Input Capacitance Ciss Output Capacitance Coss VGS=V, VDS=V, f=mhz 6 Reverse Trafer Capacitance Crss Gate Resistance Rg VGS=V, VDS=V, f=mhz.6 6.6 Ω Total Gate Charge N-Channel SI8CDS-HF (KI8CDS-HF) RDS(On) Qg VGS=V, VDS=V, ID=.A.8 9 Gate Source Charge Qgs VGS=V, VDS=.V, ID=.A. Gate Drain Charge Qgd.9.9 6 Turn-On DelayTime td(on) Turn-On Rise Time tr VDD = V, RL =.7Ω 7 Turn-Off DelayTime td(off) ID=.A, VGEN =.V, RG = Ω Turn-Off Fall Time tf 8 6 Turn-On DelayTime td(on) 7 Turn-On Rise Time tr VDD = V, RL =.7Ω Turn-Off DelayTime td(off) ID=.A, VGEN = V, RG = Ω Turn-Off Fall Time tf 8 6 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF=.A, di/dt=a/μs, TJ= C 7 nc Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Maximum Body-Diode Continuous Current I S TC=.7 Pulse Diode Forward Current ISM Diode Forward Voltage VSD IS=.A,VGS=V. V mω pf nc A Marking Marking P9* F
N-Channel SI8CDS-HF (KI8CDS-HF) = V thru V T C = - C I D - Drain Current (A) = V T C = C T C = C..... Output Characteristics.6..6..8.. - Gate-to-Source Voltage (V) Trafer Characteristics R DS(on) - On-Resistance (Ω)... =. V = V C - Capacitance (pf) 6 7 8 9 C oss C iss. I D - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage C rss Capacitance.6 - Gate-to-Source Voltage (V) 8 6 I D =. A V DS = V V DS = V V DS = V R DS(on) - On-Resistance (Normalized)....8 = V; I D =. A =. V; I D =.9 A 6 Q g - Total Gate Charge (nc) Gate Charge.6 - - 7 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature
N-Channel SI8CDS-HF (KI8CDS-HF). I D =. A I S - Source Current (A) T J = C T J = C R DS(on) - On-Resistance (Ω).8.6. T J = C T J = C...6.9. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.. 6 8 - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.8 (th) (V).6. I D = µa 6. 8.. - - 7 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power (Junction-to-Ambient) 6. Limited by R DS(on) *.. T A = C Single Pulse BVDSS Limited.. * > minimum at which R DS(on) Safe Operating Area, Junction-to-Ambient µs ms ms ms s, s DC.. 7 T C - Case Temperature ( C) Current Derating
N-Channel SI8CDS-HF (KI8CDS-HF)....9...6.. 7 7 T C - Case Temperature ( C) Power Derating, Junction-to-Foot T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient Normalized Effective Traient Thermal Impedance Duty Cycle =... Notes:.. P DM t. t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted. - - - - Square Wave Pulse Duration (s) Normalized Thermal Traient Im pedance, Junction-to-Ambient Normalized Effective Traient Thermal Impedance Duty Cycle =.... -.. Single Pulse - - Square Wave Pulse Duration (s) Normalized Thermal Traient Impedance, Junction-to-Foot -