P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G 3 4 Top View S R S(on) = 0.20Ω The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R S(on) reduction enables a currenthandling increase of nearly 300% compared to the SOT23. Micro6 bsolute Maximum Ratings Parameter Max. Units I @ T = 25 C Continuous rain Current, V GS @ 4.5V 2.3 I @ T = 70 C Continuous rain Current, V GS @ 4.5V.9 I M Pulsed rain Current 3 P @T = 25 C Power issipation.7 W Linear erating Factor 3 mw/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Thermal Resistance Ratings Parameter Min. Typ. Max Units R θj Maximum Junctiontombient 75 C/W 8/25/97
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.005 V/ C Reference to 25 C, I = m 0.200 V GS = 4.5V, I =.6 ƒ R S(on) Static raintosource OnResistance Ω 0.375 V GS = 2.7V, I = 0.80 ƒ V GS(th) Gate Threshold Voltage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance.5 S V S = 0V, I = 0.80 I SS raintosource Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 00 V GS = 2V n GatetoSource Reverse Leakage 00 V GS = 2V Q g Total Gate Charge 5.8 8.8 I =.6 Q gs GatetoSource Charge.8 2.6 nc V S = 6V Q gd Gatetorain ("Miller") Charge 2. 3. V GS = 4.5V, See Fig. 6 and 9 ƒ t d(on) TurnOn elay Time 3 V = 0V t r Rise Time 20 I =.6 ns t d(off) TurnOff elay Time 2 R G = 6.0Ω t f Fall Time 8 R = 6.Ω, See Fig. 0 ƒ C iss Input Capacitance 20 V GS = 0V C oss Output Capacitance 30 pf V S = 5V C rss Reverse Transfer Capacitance 73 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol.7 (Body iode) showing the I SM Pulsed Source Current integral reverse G 3 (Body iode) pn junction diode. V S iode Forward Voltage.2 V T J = 25 C, I S =.6, V GS = 0V ƒ t rr Reverse Recovery Time 25 37 ns T J = 25 C, I F =.6 Q rr Reverse RecoveryCharge 5 22 nc di/dt = 00/µs ƒ S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) I S.6, di/dt 00/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs; duty cycle 2%. Surface mounted on FR4 board, t 5sec.
I, ra in to S ourc e C u rren t ( ) 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTT OM. 75V.75V I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTT OM. 75V.75V 20µs PULSE WITH T J = 25 C 0. 0. 0 V S, raintosource Voltage (V) Fig. Typical Output Characteristics 20µs PULSE WITH 0. T J = 50 C 0. 0 V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I, raintosource C urrent () 00 0 T J= 25 C T J = 50 C V S = 0V 20µs PULSE W ITH 0..5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics R S(on), raintos ource On Resistance (Normalized) 2.0.5.0 0.5 I =.6 V GS = 4.5V 0.0 60 40 20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 4. Normalized OnResistance Vs. Temperature
C, Capacitance (pf) 400 V GS = 0V, f = MH z C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds C gd 300 C iss C oss 200 C rss 00 0 0 00 V S, raintosource Voltage (V) V GS, GatetoSource V oltage (V ) 0 8 6 4 2 I =.6 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE 9 0 2 4 6 8 0 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, R everse rain Current () 00 0 T J = 50 C T J = 25 C I, rain C urrent () 00 0 OPE RTION IN THIS RE LIMITE BY RS(on) 00µs ms 0ms V GS = 0V 0. 0.4 0.6 0.8.0.2.4 V S, Sourcetorain Voltage (V) T = 25 C T J = 50 C Single Pulse 0. 0 00 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea
4.5V Q GS Q G Q G R G V GS V S R.U.T. V V G 4.5V Pulse Width µs uty Factor 0. % Charge Fig 9a. Basic Gate Charge Waveform Fig 0a. Switching Time Test Circuit 2V Current Regulator Same Type as.u.t..2µf 50KΩ.3µF V GS t d(on) t r t d(off) t f 0%.U.T. V S V GS 3m I G I Current Sampling Resistors 90% V S Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 = 0.50 Thermal Response (Z thj ) 0 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj T 0. 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient
Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test * V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V GS =0V] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 2. For PChannel HEXFETS
Package Outline Micro6 Outline 3.00 (.8 ) 2.80 (. ) B LE SSIGN MEN TS RECO MMEN E FO OT PRIN T S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) 6 5 4 2 3 3.00 (.8 ) 2.60 (.03 ) 6 5 4 2 3 2.20 (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O 0 0 0.20 (.007 ) 6X 0.09 (.004 ) C 0.5 (.006 ) MX. 0.0 (.004 ) 6 SURFCES 0.60 (.023 ) 0.0 (.004 ) NOTES :. IM ENSIONING & TOLERNCING PER NSI Y4.5M982. 2. CONTROLLING IMENSION : MILLIMETER. 3. IM ENSIONS RE SHOW N IN M ILLIMETERS (INCHES). Part Marking Information Micro6 EXMPLE : THIS IS N IRLMS6702 PRT NUMBER WFER LOT NUMBER COE PRT NUMBER EXMPLES: 2 = IRLMS902 2B = IRLMS503 2C = IRLMS6702 2 = IRLMS5703 TOP BOTTOM TE COE TE COE EXMPLES: YW W = 9603 = 6C YW W = 9632 = FF WORK YER Y W EEK W 200 0 2002 2 02 B 2003 3 03 C 2004 4 04 2005 5 996 6 997 7 998 8 999 9 2000 0 24 X 25 Y 26 Z WORK YER Y WEEK W 200 27 2002 B 28 B 2003 C 29 C 2004 30 2005 E 996 F 997 G 998 H 999 J 2000 K 50 X 5 Y 52 Z W ORK WEEK = (26) IF PR EC E E BY LST IGIT O F C LEN ER YER W OR K W EEK = ( 2752) IF PR EC E E BY LETTER
Tape & Reel Information Micro6 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EI48 & EI54. 78.00 ( 7.008 ) M X. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. O UTLIN E CONF ORMS TO EI48 & EI54. WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) 322 333 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: 44 883 732020 IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) 475 897 IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 672 96590 IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: 39 45 0 IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #002 Tan Boon Liat Building, Singapore 036 Tel: 65 22 837 http://www.irf.com/ ata and specifications subject to change without notice. 8/97