2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch

Transcription

1 2 Port, UB 2. High peed (48 Mbps) witch, DPDT Analog witch DG273 DECRIPTION The DG273 is 2 port high speed analog switch optimized for UB 2. signal switching. The DG273 switch is configured in DPDT. It handles bidirectional signal flow, achieving a 9 MHz - 3 db bandwidth, and a port to port crosstalk and isolation at - 49 db. Processed with high density sub micron CMO, the DG273 provide low parasitic capacitance. ignals are routed with minimized phase distortion and attain a bit to bit skew is as low as 4 p. The DG273 is designed for a wide range of operating voltages, from 2.7 V to 4.3 V that can be driven directly from one cell Li-ion battery. On-chip circuitry protects against conditions when either the D+/D- lines are shorted to the V BU at the UB port. Additionally, logic control pins ( and ) can tolerate the presence of voltages that are above the supply power rail (). The control logic threshold is guaranteed to be (V IH = 1.3 V/min). Latch up current is 3 ma, as per JED78, and its ED tolerance exceeds 8 kv. Packaged in ultra small miniqfn-1 (1.4 mm x 1.8 mm x. mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, manufactures this product with lead (Pb)-free device termination. The miniqfn-1 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free -E4 suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and ML rating. As a further sign of 's commitment, the DG273 is fully RoH complaint. FEATURE Halogen-free according to IEC definition Wide operation voltage range Low on-resistance, 7 (typical at 3 V) Low capacitance, C ON =.8 pf (typical) 3 db high bandwidth: 9 MHz (typical) Low bit to bit skew: 4 p (typical) Low power consumption Low logic threshold: V Power down protection: D+/D- pins can tolerate up to V when = V Logic ( and ) above tolerance 8 kv ED protection (HBM) Latch-up current 3 ma per JED78 Lead (Pb)-free low profile miniqfn-1 (1.4 mm x 1.8 mm x. mm) Compliant to RoH Directive 22/9/EC APPLICATION Cellular phones Portable media players PDA Digital camera GP Notebook computer TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION miniqfn-1l Pin 1: LONG LEAD Control D+ HD1+ D- HD HD2+ HD2- Pin 1 x Top View Device marking: x for DG273 x = Date/Lot Traceability Code Rev. F, -Dec-11 1 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

2 DG273 ORDERING INFORMATION Temp. Range Package Part Number - 4 C to 8 C miniqfn-1 DG273DN-T1-GE4 TRUTH TABLE (Pin 8) (Pin 1) Function 1 D+ = HD1+ and D- = HD1- D+ = HD2+ and D- = HD2-1 X Disconnect PIN DECRIPTION Pin Name HD1±, HD2±, D± Description Bus witch Enable elect Input Data Port ABOLUTE MAXIMUM RATING (T A = 2 C, unless otherwise noted) Parameter Limit Unit Reference to -.3 to 6,, D±, HD1±, HD2± a -.3 to ( +.3) V Current (Any Terminal except,, D±, HD1±, HD2±) 3 Continuous Current (,, D±, HD1±, HD2±) ± 2 ma Peak Current (Pulsed at 1 ms, 1 % Duty Cycle) ± torage Temperature (D uffix) - 6 to 1 C Power Dissipation (Packages) b miniqfn-1 c 28 mw ED (Human Body Model) I/O to 8 kv Latch-up (Current Injection) 3 ma Notes: a. ignals on,, D±, HD1±, HD2± exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mw/ C above 7 C. PECIFICATION ( = 3 V) Parameter ymbol Test Conditions Otherwise Unless pecified Temp. a Limits - 4 C to 8 C Min. b Typ. c Max. b Analog witch Analog ignal Range d V ANALOG R D(on) Full V On-Resistance R D(on) = 3 V, I D± = 8 ma, V HD1/2± =.4 V Room 7 8 Full 9 On-Resistance Match d R ON = 3 V, I D± = 8 ma, V HD1/2± =.4 V Room.8 On-Resistance Resistance Flatness d R ON Flatness = 3 V, I D± = 8 ma, V HD1/2± = V, 1 V Room 2 = 4.3 V, V witch Off Leakage Current I HD1/2± =.3 V, 3 V, (off) V D± = 3 V,.3 V = 4.3 V, V Channel On Leakage Current I HD1/2± =.3 V, 4 V, (on) V D± = 4 V,.3 V Digital Control = 3 V to 3.6 V Full 1.3 Input Voltage High V INH = 4.3 V Full 1. Full Full Input Voltage Low V INL = 3 V to 4.3 V Full. Input Capacitance C IN Full 6. pf Input Current I INL or I INH V IN = or Full µa Unit na V Rev. F, -Dec-11 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

3 DG273 PECIFICATION ( = 3 V) Limits Test Conditions - 4 C to 8 C Parameter ymbol Otherwise Unless pecified Temp. a Min. b Typ. c Max. b Unit Dynamic Characteristics Break-Before-Make Time e, d t BBM Room Full, Turn-On Time e, d t ON = 3 V, V D1/2 ± = 1. V, R L =, Room C L = 3 pf Full 3 ns, Turn-Off Time e, d Room t OFF Full 2 Charge Injection d Q INJ C L = 1 nf, R GEN =, V GEN = V. pc Off-Isolation d OIRR = 3 V to 3.6 V, R L =, C L = pf, - 3 Crosstalk d X TALK f = 24 MHz - 4 db Bandwidth d BW = 3 V to 3.6 V, R L =, - 3 db 9 MHz D+/D- On Capacitance C ON = 3.3 V, = V, f = 24 MHz Room.8 D1n, D2n Off Capacitance C OFF = = 3.3 V, f = 24 MHz 2.2 pf Channel-to-Channel kew d t K(O) kew Off Opposite Transitions of the ame Output d t K(p) = 3 V to 3.6 V, R L =, C L = pf 2 ps Total Jitter d t J 2 Power upply Power upply Range V Power upply Current I+ V IN = V, or Full 2 µa Notes: a. Room = 2 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. V IN = input voltage to perform proper function. f. Crosstalk measured between channels. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Rev. F, -Dec-11 3 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

4 DG273 TYPICAL CHARACTERITIC (T A = 2 C, unless otherwise noted) = 2.6 V = 3. V = 3.3 V = 3.6 V = 4.3 V T = 2 C I = 8 ma D1± = 2.6 V I ON = 8 ma - 4 C + 8 C + 2 C R ON vs. V D and ingle upply Voltage R ON vs. Analog Voltage and Temperature = 3. V I ON = 8 ma - 4 C + 8 C + 2 C = 3.3 V I ON = 8 ma - 4 C + 8 C + 2 C R ON vs. Analog Voltage and Temperature R ON vs. Analog Voltage and Temperature = 3.6 V I ON = 8 ma + 8 C - 4 C + 2 C = 4.3 V I ON = 8 ma + 8 C - 4 C + 2 C R ON vs. Analog Voltage and Temperature R ON vs. Analog Voltage and Temperature Rev. F, -Dec-11 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

5 DG273 TYPICAL CHARACTERITIC (T A = 2 C, unless otherwise noted) I+ - upply Current (A) 1 ma 1 ma 1 µa 1 µa 1 µa 1 na 1 na 1 na = 4.3 V = 3.6 V = 3.3 V = 3. V = 2.6 V Leakage Current (pa) = 4.3 V I D±(ON) I D±(OFF) I D±(OFF) 1 pa K 1 K 1 K 1 M 1 M Input witching Frequency (Hz) upply Current vs. Input witching Frequency Temperature ( C) Leakage Current vs. Temperature V T - witching Threshold (V) V IH.9.8 V IL upply Voltage (V) Gain (db) Frequency (MHz) witching Threshold vs. upply Voltage Gain vs. Frequency, = 3.3 V Off Isolation (db) Frequency (MHz) Off-Isolation, = 3.3 V Crosstalk (db) Frequency (MHz) Crosstalk, = 3.3 V Rev. F, -Dec-11 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

6 DG273 TET CIRCUIT witch Input Logic Input HD1± or HD2± D± witch Output R L Ω V OUT C L 3 pf Logic Input witch Output V INH V INL V % t r t f < ns < ns.9 x V OUT V t ON t OFF C L (includes fixture and stray capacitance) V OUT = D± ( ) R L R + L R ON Logic "1" = witch on Logic input waveforms inverted for switches that have the opposite logic sense. Figure 1. witching Time V HD1± HD1± D± V O Logic Input V INH V INL t r < ns t f < ns V HD2± HD2± R L Ω C L 3 pf HD1± = HD2± V O 9 % witch Output V t D t D C L (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V gen + R gen V IN = - HD1± or HD2± D± V OUT C L = 1 nf V OUT IN On V OUT Off Q = OUT x C L On IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection Rev. F, -Dec-11 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

7 DG273 TET CIRCUIT 1 nf 1 nf HD1± or HD2± V, 2.4 V D± Analyzer R L D± V, 2.4 V HD1± or HD2± Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz Off Isolation = 2 log V D± V HD2± or HD1± Figure 4. Off-Isolation Figure. Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? Rev. F, -Dec-11 7 THE PRODUCT DECRIBED HEREIN AND THI DOCUMENT ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT /doc?91

8 Package Information MINI QFN-1L CAE OUTLINE DIM MILLIMETER INCHE MIN. NAM. MAX. MIN. NAM. MAX. A A b c.1 REF.6 REF D E e.4 BC.16 BC L L ECN T-739-Rev. A, 12-Feb-7 DWG: 97 Document Number: Feb-7 1

9 PAD Pattern RECOMMENDED MINIMUM PAD FOR MINI QFN 1L 1.7 (.669) 9 x.63 (.221).663 (.261).2 (.79) (.827).4 (.17) Pitch 1 x.22 (.89) Mounting Footprint Dimensions in mm (inch) Document Number: 664 Revision: -Mar-1 1

10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT PECIFICATION AND DATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DEIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoH-Compliant fulfill the definitions and restrictions defined under Directive 211/6/EU of The European Parliament and of the Council of June 8, 211 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoH Directive 22/9/EC. We confirm that all the products identified as being compliant to Directive 22/9/EC conform to Directive 211/6/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC J79A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC J79A standards. Revision: 2-Oct-12 1 Document Number: 91

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