LT GHz to 3.8GHz High Linearity Upconverting Mixer. Description. Features. Applications. Typical Application

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1 Features n High Output IP3: +7.3 at.1ghz n Low Noise Floor: /Hz (P OUT = 5) n High Conversion Gain:. at.1ghz n Wide Frequency Range: 1.5GHz to 3.GHz* n Low LO Leakage n Single-Ended RF and LO n Low LO Drive Level: 1 n Single 3.3V Supply n 5mm 5mm QFN Package Applications n GSM/EDGE, W-CDMA, UMTS, LTE and TD-SCDMA Basestations n.ghz and 3.5GHz WiMAX Basestations n.ghz ISM Band Transmitters n High Performance Transmitters L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. *Operation over wider frequency range is possible with reduced performance. Consult Linear Technology for information and assistance. Description LT GHz to 3.GHz High Linearity Upconverting Mixer The LT 5579 mixer is a high performance upconverting mixer optimized for frequencies in the 1.5GHz to 3.GHz range. The single-ended LO input and RF output ports simplify board layout and reduce system cost. The mixer needs only 1 of LO power and the balanced design results in low LO signal leakage to the RF output. At.GHz operation, the LT5579 provides high conversion gain of 1.3, high of + and a low noise floor of 7.5/Hz at a 5 RF output signal level. The LT5579 offers a high performance alternative to passive mixers. Unlike passive mixers, which have conversion loss and require high LO drive levels, the LT5579 delivers conversion gain at significantly lower LO input levels and is less sensitive to LO power level variations. The lower LO drive level requirements, combined with the excellent LO leakage performance, translate into lower LO signal contamination of the output signal. Typical Application Frequency Upconversion in.1ghz W-CDMA Transmitter LO INPUT 1 (TYP) Gain, NF and vs RF Output Frequency LT5579 LO 3 IF INPUT MHz MABAES1 :1 pf pf 33pF 11Ω nh nh 11Ω IF + IF BIAS 1µF RF 1pF 5579 TA1a 1nF 3.9nH.5pF VCC 3.3V RF OUTPUT 1MHz (), NF (), () T A = = 3.3V f IF = MHz f LO = f RF + f IF SSB NF TA1b

2 Absolute Maximum Ratings (Note 1) Supply Voltage...V LO Input Power LO Input DC Voltage....3V to +.3V RF Output DC Current... ma IF Input Power (Differential) IF +, IF DC Currents... ma T JMAX... C Operating Temperature Range... to Storage Temperature Range... 5 C to C Pin Configuration TOP VIEW LO IF + 3 IF RF VCC UH PACKAGE -LEAD (5mm 5mm) PLASTIC QFN T JMAX = C, θ JA = 3 C/W, θ JC = 3 C/W EXPOSED PAD (PIN 5) IS, MUST BE SOLDERED TO PCB Order Information LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LT5579IUH#PBF LT5579IUH#TRPBF Lead (5mm 5mm) Plastic QFN to Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: For more information on tape and reel specifications, go to: DC Electrical Characteristics = 3.3V, T A = (Note 3), unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS Power Supply Requirements ( ) Supply Voltage V DC Supply Current = 3.3V, P LO = 1 = 3.V, P LO = ma ma Input Common Mode Voltage (V CM ) Internally Regulated 57 mv AC Electrical Characteristics (Notes, 3) PARAMETER CONDITIONS MIN TYP MAX UNITS IF Input Frequency Range (Note ) Requires Matching LF to 1 MHz LO Input Frequency Range (Note ) Requires Matching Below 1GHz 75 to 3 MHz RF Output Frequency Range (Note ) Requires Matching 9 to 39 MHz

3 AC ELECTRICAL CHARACTERISTICS = 3.3V, T A =, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), P LO = 1, unless otherwise noted. Test circuits are shown in Figure 1. (Notes, 3) PARAMETER CONDITIONS MIN TYP MAX UNITS IF Input Return Loss Z O = 5Ω, External Match LO Input Return Loss Z O = 5Ω, 11MHz to MHz >9 RF Output Return Loss Z O = 5Ω, External Match >1 LO Input Power 5 to = 3.3V, T A =, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), P LO = 1, unless otherwise noted. Low side LO for 175MHz and 3MHz. High side LO for 1MHz and MHz. (Notes, 3, ) PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz Conversion Gain vs Temperature (T A = to ) Output 3rd Order Intercept Output nd Order Intercept Single Sideband Noise Figure Output Noise Floor (P OUT = 5) Output 1 Compression IF to LO Isolation LO to IF Leakage LO to RF Leakage f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz f IF = MHz, f RF = 175MHz f IF = MHz, f RF = 1MHz f IF = 5MHz, f RF = MHz f IF = 5MHz, f RF = 3MHz Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note : Each set of frequency conditions requires appropriate matching (see Figure 1) / C / C / C / C /Hz /Hz /Hz /Hz Note 3: The LT5579 is guaranteed functional over the operating temperature range from to. Note : SSB noise figure measurements performed with a small-signal noise source and bandpass filter on LO signal generator. No other IF signal applied.

4 Typical DC Performance Characteristics (Test Circuit Shown in Figure 1) 55 Supply Current vs Supply Voltage 5 SUPPLY CURRENT (ma) SUPPLY VOLTAGE (V) G1 Typical AC Performance Characteristics 33MHz to 3MHz Application: = 3.3V, T A =, f IF = 5MHz, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), low side LO, P LO = 1, output measured at 3MHz, unless otherwise noted. (Test circuit shown in Figure 1) DISTRIBUTION (%) Gain Distribution at 3MHz T A = 9 C T A = T A = 5 C DISTRIBUTION (%) 1 1 Distribution at 3MHz T A = 9 C T A = T A = 5 C DISTRIBUTION (%) Distribution at 3MHz T A = 9 C T A = T A = 5 C () () G 5579 G G

5 Typical AC Performance Characteristics 33MHz to 3MHz Application: = 3.3V, T A =, f IF = 5MHz, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), low side LO, P LO = 1, output measured at 3MHz, unless otherwise noted. (Test circuit shown in Figure 1) LT5579 Conversion Gain and LO-RF Leakage 1 1 () () LO LEAKAGE () G G 5579 G7 Conversion Gain and vs LO Input Power vs LO Input Power Conversion Gain and vs Supply Voltage () LO INPUT POWER () () LO INPUT POWER () () SUPPLY VOLTAGE (V) () 5579 G 5579 G G1 IM3 Level vs RF Output Power (-Tone) IM Level vs RF Output Power (-Tone) vs Supply Voltage 1 IM3 LEVEL (c) IM LEVEL (c) RF OUTPUT POWER (/TONE) 1 1 RF OUTPUT POWER (/TONE) SUPPLY VOLTAGE (V) G G 5579 G13

6 Typical AC Performance Characteristics 3MHz to 7MHz Application: = 3.3V, T A =, f IF = 5MHz, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), high side LO, P LO = 1, output measured at MHz, unless otherwise noted. (Test circuit shown in Figure 1) Conversion Gain and LO-RF Leakage () 3 1 () LO LEAKAGE () G G 5579 G Conversion Gain and vs LO Input Power 1 vs LO Input Power Conversion Gain and vs Supply Voltage () () 1 1 () () LO INPUT POWER () 1 1 LO INPUT POWER () SUPPLY VOLTAGE (V) G G G19 IM3 Level vs RF Output Power (-Tone) IM Level vs RF Output Power (-Tone) 1 vs Supply Voltage 1 IM3 LEVEL (c) IM LEVEL (c) RF OUTPUT POWER (/TONE) 1 1 RF OUTPUT POWER (/TONE) SUPPLY VOLTAGE (V) G 5579 G G

7 Typical Performance Characteristics 1MHz Application: = 3.3V, T A =, f IF = MHz, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), high side LO, P LO = 1, output measured at 1MHz, unless otherwise noted. (Test circuit shown in Figure 1) LT5579 Conversion Gain and LO-RF Leakage () () LO LEAKAGE () G G 5579 G5 Conversion Gain and vs LO Input Power 3 1 vs LO Input Power Conversion Gain and vs Supply Voltage 3 () 1 () 1 1 () 1 () LO INPUT POWER () 1 1 LO INPUT POWER () SUPPLY VOLTAGE (V) G 5579 G G19 IM3 Level vs RF Output Power (-Tone) IM Level vs RF Output Power (-Tone) 1 vs Supply Voltage 1 IM3 LEVEL (c) IM LEVEL (c) RF OUTPUT POWER (/TONE) 1 1 RF OUTPUT POWER (/TONE) SUPPLY VOLTAGE (V) G G G31

8 Typical Performance Characteristics 175MHz Application: = 3.3V, T A =, f IF = MHz, P IF = 5 ( 5/tone for -tone tests, f = 1MHz), low side LO, P LO = 1, output measured at 175MHz, unless otherwise noted. (Test circuit shown in Figure 1) () 5 Conversion Gain and () LO LEAKAGE () LO-RF Leakage G G G3 Conversion Gain and vs LO Input Power 3 1 vs LO Input Power Conversion Gain and vs Supply Voltage 3 1 () 1 () 1 () () LO INPUT POWER () LO INPUT POWER () SUPPLY VOLTAGE (V) G G G37 IM3 Level vs RF Output Power (-Tone) IM Level vs RF Output Power (-Tone) 1 vs Supply Voltage 1 IM3 LEVEL (c) IM LEVEL (c) RF OUTPUT POWER (/TONE) 1 1 RF OUTPUT POWER (/TONE) SUPPLY VOLTAGE (V) G G G

9 Pin Functions (Pins 1,, 5-7, -1, -1, 19-1, 3, ): Ground Connections. These pins are internally connected to the exposed pad and should be soldered to a low impedance RF ground on the printed circuit board. IF +, IF (Pins 3, ): Differential IF Input. The common mode voltage on these pins is set internally to 57mV. The DC current from each pin is determined by the value of an external resistor to ground. The maximum DC current through each pin is ma. (Pins -11): Power Supply Pins for the IC. These pins are connected together internally. Typical current consumption is ma. These pins should be connected together on the circuit board with external bypass capacitors of 1pF, 1pF and 1pF located as close to the pins as possible. LT5579 RF (Pin ): Single-Ended RF Output. This pin is connected to an internal transformer winding. The opposite end of the winding is grounded internally. An impedance transformation may be required to match the output and a DC decoupling capacitor is required if the following stage has a DC bias voltage present. LO (Pin ): Single-Ended Local Oscillator Input. An internal series capacitor acts as a DC block to this pin. Exposed Pad (Pin 5): P. Electrical and thermal ground connection for the entire IC. This pad must be soldered to a low impedance RF ground on the printed circuit board. This ground must also provide a path for thermal dissipation.

10 Block Diagram 5 EXPOSED PAD RF 11 LO LO BUFFER DOUBLE BALANCED MIXER 1 9 BIAS V CM CTRL PINS ARE NOT SHOWN IF + IF BD 1

11 Test Circuit LO INPUT R IF INPUT T1 :1 C1 C TL1 C9 TL L1 C3 L LO IF + IF RF C L3 TL3 RF OUTPUT VCC R C C5 C C F1 REF DES f RF = 175MHz f IF = MHz f RF = 1MHz f IF = MHz f RF = MHz f IF = 5MHz f RF = 3MHz f IF = 5MHz SIZE COMMENTS C1, C pf pf 33pF 33pF AVX C3.7pF 1.pF AVX C 1pF 1pF 1pF 1pF AVX C5 1pF 1pF 1pF 1pF 3 AVX C 1nF 1nF 1nF 1nF AVX C7 1µF 1µF 1µF 1µF 3 Taiyo Yuden LMK17BJMA C 1.pF.5pF.7pF AVX ACCU-P C9 33pF 33pF 33pF 33pF AVX L1, L nh nh nh nh Coilcraft CS L3.nH 3.9nH 1nH Ω Toko LL-FHL/Ω Jumper R1, R 11Ω,.1% 11Ω,.1% 11Ω,.1% 11Ω,.1% 3 IRC PFC-W3R-3-11R1-B T1 :1 :1 :1 :1 SM- M/A-COM MABAES1 TL1, TL* 1mm 1.mm Z O = 7Ω Microstrip TL3 mm mm mm mm Z O = 7Ω Microstrip *Center-to-center spacing between C9 and C3. Center of C9 is.mm from the edge of the IC package for all cases. Figure 1. Test Circuit Schematic 11

12 Applications Information The LT5579 uses a high performance LO buffer amplifier driving a double-balanced mixer core to achieve frequency conversion with high linearity. Internal baluns are used to provide single-ended LO input and RF output ports. The IF input is differential. The LT5579 is intended for operation in the 1.5GHz to 3.GHz frequency range, though operation outside this range is possible with reduced performance. IF Input Interface The IF inputs are tied to the emitters of the double-balanced mixer transistors, as shown in Figure. These pins are internally biased to a common mode voltage of 57mV. The optimum DC current in the mixer core is approximately 5mA per side, and is set by the external resistors, R1 and R. The inductors and resistors must be able to handle the anticipated current and power dissipation. For best LO leakage performance the board layout must be symmetrical and the input resistors should be well matched (.1% tolerance is recommended). The purpose of the inductors (L1 and L) is to reduce the loading effects of R1 and R. The impedances of L1 and L should be at least several times greater than the IF input impedance at the desired IF frequency. The self-resonant frequency of the inductors should also be at least several times the IF frequency. Note that the DC resistances of L1 and L will affect the DC current and may need to be accounted for in the selection of R1 and R. L1 and L should connect to the signal lines as close to the package as possible. This location will be at the lowest impedance point, which will minimize the sensitivity of the performance to the loading of the shunt L-R branches. Capacitors C1 and C are used to cancel out the parasitic series inductance of the IF transformer. They also provide DC isolation between the IF ports to prevent unwanted interactions that can affect the LO to RF leakage performance. The differential input resistance to the mixer is approximately 1Ω, as indicated in Table 1. The package and external inductances (TL1 and TL) are used along with R1 IF INPUT T1 :1 C1 TL1 L1 LT5579 IF mV 5mA k C9 C3 C TL L IF 57mV 5mA k R 5579 F Figure. IF Input with External Matching

13 Applications Information C9 to step the impedance up to about.5ω. At lower frequencies additional series inductance may be required between the IF ports and C9. The position of C9 may vary with the IF frequency due to the different series inductance requirements. The :1 impedance ratio of transformer T1 completes the transformation to 5 ohms. Table 1 lists the differential IF input impedances and reflection coefficients for several frequencies. Table 1. IF Input Differential Impedance FREQUENCY (MHz) IF INPUT IMPEDANCE REFLECTION COEFFICIENT MAG ANGLE 7.+j j j j j j j j j The purpose of capacitor C3 is to improve the LO-RF leakage in some applications. This relatively small-valued capacitor has little effect on the impedance match in most cases. This capacitor should typically be located close to the IC, however, there may be cases where re-positioning the capacitor may improve performance. The measured return loss of the IF input is shown in Figure 3 for application frequencies of 7MHz, MHz and 5MHz. Component values are listed in Table. (For 7MHz matching details, refer to Figure.) Table. IF Input Component Values FREQUENCY (MHz) C1, C (pf) C9 (pf) C3 (pf) L1, L (nh) R1, R (Ω) MATCH BW (at RL) 7(3) 1 (1) <5 to 1 1 (1) to (1) to (1) to 55 Note: (1) Depends on RF, () T1 = M/A-Com MABAES1, (3) See Figure 5 RETURN LOSS () 1 5 c b a FREQUENCY (MHz) 5579 F3 Figure 3. IF Input Return Loss with 7MHz (a), MHz (b) and 5MHz (c) Matching 13

14 Applications Information LO Input Interface The simplified schematic for the single-ended LO input port is shown in Figure. An internal transformer provides a broadband impedance match and performs single-ended to differential conversion. An internal capacitor also aids in impedance matching and provides DC isolation to the primary transformer winding. The transformer secondary feeds the differential limiting amplifier stages that drive the mixer core. The measured return loss of the LO input port is shown in Figure 5 for an LO input power of 1. The impedance match is acceptable from about 1.1GHz to beyond GHz, with a minimum return loss across this range of about 9 at 3MHz. If desired, the return loss can be improved below 1.1GHz by external components as shown in Figure. The return loss can also be improved by reducing the LO drive level, though performance will degrade if the level is too low. While external matching of the LO input is not required for frequencies above 1.1GHz, external matching should be used for lower LO frequencies for best performance. Table 3 lists the input impedance and reflection coefficient vs frequency for the LO input for use in such cases. Table 3. Single-Ended LO Input Impedance (at Pin, No External Match) FREQUENCY INPUT REFLECTION COEFFICIENT (MHz) IMPEDANCE MAG ANGLE j j j j j j j j j j LO INPUT EXTERNAL MATCHING FOR LOW FREQUENCY ONLY L C13 LO V BIAS 5579 F RETURN LOSS () 5 1 Figure. LO Input Circuit FREQUENCY (MHz) 5579 F5 Figure 5. LO Input Return Loss 1

15 Applications Information RF Output Interface The RF output interface is shown in Figure. An internal RF transformer reduces the mixer core output impedance to simplify matching of the RF output pin. A center tap in the transformer provides the DC connection to the mixer core and the transformer provides DC isolation to the RF output. The RF pin is internally grounded through the secondary winding of the transformer, thus a DC voltage should not be applied to this pin. While the LT5579 performs best at frequencies above MHz, the part can be used down to 9MHz. The internal RF transformer is not optimized for these lower frequencies, thus the gain and impedance matching bandwidth will decrease due to the low transformer inductance. The impedance data for the RF output, listed in Table, can be used to develop matching networks for different frequencies or load impedances. Figure 7 illustrates the output return loss performance for several applications. The component values and approximate matching bandwidths are listed in Table 5. DC and RF Grounding The LT5579 relies on the back side ground for both RF and thermal performance. The Exposed Pad must be soldered to the low impedance topside ground plane of the board. Several vias should connect the topside ground to other ground layers to aid in thermal dissipation. LT5579 C L3 RF 5Ω RETURN LOSS () a b c FREQUENCY (MHz) d LT5579 Table. Single-Ended RF Output Impedance (at Pin, No External Matching) FREQUENCY RF OUTPUT REFLECTION COEFFICIENT (MHz) IMPEDANCE MAG ANGLE j j j j j j j Table 5. RF Output Component Values FREQUENCY (MHz) C (pf) L3 (nh) MATCH BW (at RL) to to to to 5 1 to 7* 3.7 Ω 317 to 1* *1 Return Loss bandwidth 5579 F F Figure 7. RF Output Return Loss with 175MHz (a), 1MHz (b), MHz (c) and 3MHz (d) Matching Figure. RF Output Circuit

16 Typical Applications The following examples illustrate the implementation and performance of the LT5579 in different frequency configurations. These circuits were evaluated using the circuit board shown in Figure. 5MHz Application In this case, the LT5579 was evaluated while tuned for an IF of 7MHz and an RF output of 5MHz. The matching configuration is shown in Figure. Input capacitors are used only as DC blocks in this application. The.7nH inductors and the pf capacitor transform the input impedance of the IC up to approximately IF 7MHz MABAES1 :1 1nF 1nF 9.1Ω 7pF.7nH pf.7nh 7pF 9.1Ω 1nH 1nH 1.5pF.5Ω. The relatively low input frequency demanded the use of.7nh chip inductors instead of short transmission lines. Closer to the IC input, 7pF capacitors were used instead of a single differential capacitor (C3 in Figure 1), because it was found that the addition of common mode capacitance improved the high side LO performance in this application. The value of these 7pF capacitors was selected to resonate with the 1nH inductors at 7MHz. Note that adding common mode capacitance does not improve performance with all frequency configurations. The RF port impedance match was realized with C = 1.5pF and L3 =.nh. The optimum impedance match LO Figure. IF Input Tuned for 7MHz.nH RF 5MHz 5579 F was purposefully shifted high in order to achieve better performance at the desired frequency. Figure 9 shows the measured conversion gain and as a function of RF output frequency. As mentioned above, the output impedance match is shifted towards the high side of the band, and this is evidenced by the positive slope of the gain. The single sideband noise figure across the frequency range is also shown. Curves for both high side and low side LO cases are shown. In this particular application, the low side outperforms the high side case. (), NF (), () T A = f IF = 7MHz P IF = 5/TONE P LO = 1 SSB NF LOW SIDE LO HIGH SIDE LO 5 17 RF OUTPUT FREQUENCY (MHz) F9 Figure 9. Gain, Noise Figure and vs RF Frequency with 7MHz IF and 5MHz RF 195MHz Application In this example, a high side LO was used to convert the IF input signal at MHz to 195MHz at the RF output. The RF port impedance match was realized with C = 1pF and L3 =.7nH. As in the 5MHz case, it was found that tuning the output match slightly high in frequency gave better results at the desired frequency. The input match for MHz operation is the same as described in the test circuit of Figure 1. The measured 195MHz performance is plotted in Figure 1 for both low side and high side LO drive. With this matching configuration, the low side LO case outperforms the high side LO. The gain, noise figure (SSB) and are plotted as a function of RF output frequency.

17 TYPICAL APPLICATIONS (), NF (), () T A = f IF = MHz P IF = 5/TONE P LO = 1 SSB NF LOW SIDE LO HIGH SIDE LO RF OUTPUT FREQUENCY (MHz) 5579 F1 Figure 1. Gain, Noise Figure and vs RF Frequency for the 195MHz Application 1MHz with Low Side LO The LT5579 was fully characterized with an RF output of 1MHz and a high side LO. The part also works well when driven with low side LO, however, the performance (), NF (), () SSB NF RF OUTPUT FREQUENCY (MHz) 5579 F11 LT5579 benefited from the addition of common mode capacitance to the IF input match. A 1pF capacitor to ground was added to each IF pin. These capacitors were attached near inductors L1 and L. The measured performance is shown in Figure T A = f IF = MHz P IF = 5/TONE P LO = 1 f RF = f IF + f LO Figure 11. Measured Performance when Tuned for MHz IF, 1MHz RF and Low Side LO Figure. LT5579 Evaluation Board (DC33A) 17

18 Package Description UH Package -Lead Plastic QFN (5mm 5mm) (Reference LTC DWG # Rev A) REF PACKAGE OUTLINE BSC RECOMMENDED SOLDER PAD LAYOUT APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED PIN 1 TOP MARK (NOTE ) 5..1 R =.5 BOTTOM VIEW EXPOSED PAD.75.5 TYP R =. TYP..5 3 PIN 1 NOTCH R =.3 TYP OR.35 5 CHAMFER REF REF NOTE: 1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED.mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE BSC (UH) QFN 7 REV A 1

19 Revision History REV DATE DESCRIPTION PAGE NUMBER A /1 Revised Typical Application drawing. Revised Absolute Maximum Ratings, Pin Configuration and DC Electrical Characteristics sections. Revised AC Electrical Characteristics section parameters and Note 3. Revised Figure 1 table. Update Tables, 3 and 5 in Applications Information section Added Typical Application drawing and graph, and revised Related Parts list , 1, Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 19

20 Typical Application 5MHz LTE Downlink Transmitter LT5579 LO INPUT 1 (TYP) LO 1 9 Gain and vs RF Output Frequency 7 IF INPUT 3MHz MABAES1 :1 33pF 33pF 33pF 11Ω nh.7pf nh 11Ω BIAS IF + IF 1µF RF 1pF 1nH 5579 TAa 1nF RF OUTPUT 5MHz VCC 3.3V () T A = = 3.3V f IF = 3MHz 5 55 LOW-SIDE LO HIGH-SIDE LO TAb () Related Parts PART NUMBER DESCRIPTION COMMENTS Infrastructure LT557 MHz to 3.7GHz, 5V Downconverting Mixer.3 Gain, 3.5 IIP3 and.5 NF at 19MHz, 5V/7mA Supply LT5557 MHz to 3.GHz, 3.3V Downconverting Mixer.9 Gain,.7 IIP3 and 11.7 NF at 195MHz, 3.3V/mA Supply LTC-X 3MHz Low Distortion IF Amp/ADC Driver Fixed Gain of, 1, and ; >3 at 3MHz, Differential I/O LTC1-X 1MHz Low Distortion IF Amp/ADC Driver Fixed Gain of, 1, and ; > at 1MHz, Differential I/O LTC GHz -Bit ADC Buffer.5 to 3MHz, Programmable Fast Recovery Output Clamping LTC 31 Linear Analog VGA 35 at MHz, Continuous Gain Range 1 to 17 LT555 Ultralow Distort IF Digital VGA at MHz, to 1 Gain Range,.5 Gain Steps LT5575 7MHz to.7ghz Direct Conversion I/Q Demodulator Integrated Baluns, IIP3, 13 P1,.3 I/Q Amplitude Match,. Phase Match LT557 MHz to.7ghz Upconverting Mixer 7 at 9MHz,. at 1.95GHz, Integrated RF Transformer LTC559 5MHz to 1.GHz I/Q Modulator 7.7 at 1MHz,.9 at 9MHz, 1./Hz Noise Floor RF Power Detectors LT553 5MHz to 3GHz Log RF Power Detector with Dynamic Range ±1 Output Variation over Temperature, 3ns Response Time, Log Linear Response LT5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 1GHz, 3 Log Linear Dynamic Range LT557.7GHz Mean-Squared Detector ±.5 Accuracy Over Temperature and >5 Dynamic Range, 5ns Rise Time LT551 GHz Low Power RMS Detector Dynamic Range, ±1 Accuracy Over Temperature, 1.5mA Supply Current ADCs LTC -Bit, 13Msps ADC 7FS Noise Floor, >3 SFDR at 5MHz LTC-1 1-Bit, Msps ADC Ultralow Power 7. SNR, SFDR, 19mW Power Consumption LTC- -Bit, 5Msps ADC 5. SNR, 7 SFDR, 7mW Power Consumption LT 1 REV A PRINTED IN USA Linear Technology Corporation 3 McCarthy Blvd., Milpitas, CA () 3-19 FAX: () LINEAR TECHNOLOGY CORPORATION