Gallium Nitride 28V, 18W RF Power Transistor. Symbol Parameter Min Typ Max Units. Symbol Parameter Typ Units
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1 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES Optimized for CW, Pulsed, WiMAX, and other applications from MHz 18W P3dB CW Power 2W P3dB peak envelope power 1.7W linear 2% EVM for single carrier OFDM, 1.3dB peak/average, probability on CCDF, 1.dB gain, 18% drain efficiency Characterized for operation up to 32V 1% RF tested Thermally enhanced industry standard package High reliability gold metallization process Lead-free and RoHS compliant Subject to EAR99 export control MHz 18 Watt, 28 Volt GaN HEMT Typical 2-Tone Performance: V DS = 28V, I DQ = 2mA, Frequency = 3MHz, Tone spacing = 1MHz, T C = 2 C. Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P 3dB,PEP Peak Envelope Power at 3dB Compression W P 1dB,PEP Peak Envelope Power at 1dB Compression W G SS Small Signal Gain db h Peak Drain Efficiency at P OUT = P 3dB % RF Specifications (CW): V DS = 28V, I DQ = 2mA, Frequency = 3MHz, T C = 2 C, Measured in Load Pull System Symbol Parameter Typ Units P 3dB Average Output Power at 3dB Gain Compression 18 W P 3dB,Pulsed Pulsed Output Power at 3dB Gain Compression 2 W P 1dB,Pulsed Pulsed Output Power at 1dB Gain Compression 1 W Typical OFDM Performance: V DS = 28V, I DQ = 2mA, P OUT,AVG = 1.7W, single carrier OFDM waveform 64-QAM 3/4, 8 burst, 2ms frame, 1ms frame data, 3.MHz channel bandwidth. Peak/Avg = probability on CCDF. Frequency = 33 to 38MHz. T C =2 C. Measured in Load Pull System (Refer to Table 1 and Figure 1) Symbol Parameter Typ Units G P Power Gain 1. db h Drain Efficiency 18 % EVM Error Vector Magnitude 2. % IRL Input Return Loss 1 db Page 1 NDS- Rev, April 213
2 DC Specifications: T C = 2 C Symbol Parameter Min Typ Max Units Off Characteristics V BDS I DLK Drain-Source Breakdown Voltage (V GS = -8V, I D = 8mA) Drain-Source Leakage Current (V GS = -8V, V DS = 6V) V ma On Characteristics V T V GSQ R ON I D Gate Threshold Voltage (V DS = 28V, I D = 8mA) Gate Quiescent Voltage (V DS = 28V, I D = 2mA) On Resistance (V GS = 2V, I D = 6mA) Drain Current (V DS = 7V pulsed, 3ms pulse width,.2% duty cycle, V GS = 2V) V V -.4. W -. - A Absolute Maximum Ratings: Not simultaneous, T C = 2 C unless otherwise noted Symbol Parameter Max Units V DS Drain-Source Voltage 1 V V GS Gate-Source Voltage -1 to 3 V P T Total Device Power Dissipation (Derated above 2 C) 28 W q JC Thermal Resistance (Junction-to-Case) 6.2 C/W T STG Storage Temperature Range -6 to 1 C T J Operating Junction Temperature 2 C HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>2V) MM Machine Model ESD Rating (per JESD22-A11) M1 (>V) Page 2 NDS- Rev, April 213
3 Table 1: Optimum Source and Load Impedances for OFDM Linearity, V DS = 28V, I DQ = 2mA Frequency (MHz) Z S (W) Z L (W) P OUT (W) Gain (db) Drain Efficiency (%) j j j j j j j j j j j j Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 2ms frame, 1ms frame data, 3. MHz channel bandwidth. Peak/Avg = probability on CCDF, 2% EVM. Z S is the source impedance presented to the device. Z L is the load impedance presented to the device. Figure 1 - Optimal Impedances for OFDM Linearity, V DS = 28V, I DQ = 2mA Page 3 NDS- Rev, April 213
4 Load-Pull Data, Reference Plane at Device Leads V DS =28V, I DQ =2mA, T A =2 C unless otherwise noted. Figure 2 - CW, pulsed CW, and PEP, 3MHz, Constant Impedance States Figure 3 - CW Power Sweep, 3MHz Figure 4 - Typical OFDM Performance P OUT = 1.W Figure - Typical OFDM Performance at 3MHz versus I DQ Page 4 NDS- Rev, April 213
5 Load-Pull Data, Reference Plane at Device Leads V DS =28V, I DQ =2mA, T A =2 C unless otherwise noted. Figure 6 - Typical IMD3 Performance, 3MHz Typical Device Characteristics V DS =28V, I DQ =2mA, T A =2 C unless otherwise noted. Figure 7 - Power Derating Curve Figure 8 - MTTF of NRF1 Devices Page NDS- Rev, April 213
6 AD MHz 1.7W Linear WiMAX Application Design 82.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 2ms frame 1% filled, 3.MHz channel bandwidth, CCDF Detailed design information and data available at V GS V DS VGS + C1 1uF C1.1uF C2.1uF C3 1pF R1 1 C1.6pF C9.6pF R C16 27uF VDS 4mils 6mils C4.6pF C8 1.uF C7.1uF C6 1pF C 1pF RF IN RF OUT RFIN C11.6pF 68mils 4mils C12.3pF 8mils 34mils 9mils 43mils 49mils 17mils 3mils 2mils 9mils 24mils 68mils 24mils C14 C3.6pF.6pF RFOUT Figure 9 - AD-6 Demonstration Board and Schematic Table 2: AD-6 Demonstration Board Bill of Materials Name Value Tolerance Vendor Vendor Number C1.1uF 1% Kemet C126C14K1RACTU C2, C7.1uF 1% AVX 1261C13KAT2A C3, C6 1pF 1% Kemet C8C12K1RACTU C 1pF 1% Kemet C8C11K1RACTU C8 1.uF 1% Panasonic ECJ-YB2A1M C4, C9, C1, C11, C14.6pF +/-.1pF ATC ATC6FR6B C12.3pF +/-.1pF ATC ATC6FR3B C13.6pF +/-.1pF ATC ATC6FR6B C1 1uF 2% Nichicon UPW1C11MED C16 27uF 2% United Chemi-Con ELXY63ELL271MK2S R1 1 ohm 1% Panasonic ERJ-2RKF1RX R2.33 ohm 1% Panasonic ERJ-6RQFR33V PA D Substrate Rogers R43, t = 3mil e r = 3. Page 6 NDS- Rev, April 213
7 AD MHz 1.7W Linear WiMAX Application Design 82.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 2ms frame 1% filled, 3.MHz channel bandwidth, CCDF Detailed design information and data available at Gain (db), Drain Efficiency (%) Gain (db) Efficiency (%) Gain (db), Drain Efficiency (%) Gain (db) Efficiency (%) Pout (dbm) Figure 1 - Gain, Efficiency, EVM at 34MHz Pout (dbm) Figure 11 - Gain, Efficiency, EVM at 3MHz Gain (db), Drain Efficiency (%) Gain (db) Efficiency (%) Pout (dbm) Figure 12 - Gain, Efficiency, EVM at 36MHz Page 7 NDS- Rev, April 213
8 AD MHz 1.7W Linear WiMAX Application Design 82.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 2ms frame 1% filled, 3.MHz channel bandwidth, CCDF Detailed design information and data available at 3. GHz Mhz 1.7 MHz/div 31. MHz Figure 14 - Typical S 11 and S 21 Figure 13 - ETSI Mask Compliance in Nitronex Demonstration Board at 3MHz and P OUT = 1.W Page 8 NDS- Rev, April 213
9 Ordering Information Part Number Order Multiple Description DT 97 Tube; in D (PSOP2) Package DR 1 Tape and Reel; in D (PSOP2) Package 1: To find a Nitronex contact in your area, visit our website at Figure 1 - D Package Dimensions and Pinout Inches Millimeters A Dim Min Max Min Max C A D/2 A/2 D B E Chamfer Gate NC Gate Gate 3. Gate 3. Gate 4. Gate. 4. Drain NC 6.. Drain NC Drain Drain 8. Drain 7. Drain 9. Source Pad 8. (Bottom) NC 9. Source Pad (Bottom) B C D E f. BSC 1.27 BSC F G G H G H L m 8 8 G1 SEATING PLANE f (6X) F (8X) L m SEATING PLANE Figure 16 - Mounting Footprint R.16 (4X Typ) Solder Paste.2" X.4" (8X Typ) PWB Pad (8X Typ) Heat Sink Pedestal PWB Cutout Solder Mask." Relief (Typ) Solder Paste.8" X.12" (Typ) Page 9 NDS- Rev, April 213
10 Nitronex, LLC 23 Presidential Drive Durham, NC 2773 USA (telephone) (fax) Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Important Notice Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling Nitronex at or visiting our website at Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their product and applications using Nitronex semiconductor products or services. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right, copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in which Nitronex products or services are used. Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements. Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex, LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its officers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent regarding the design or manufacture of said products. Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC. All other product or service names are the property of their respective owners. Nitronex, LLC 212. All rights reserved. Page 1 NDS- Rev, April 213
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NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
Gain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz
g107001efc-gr3 Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 1215 MHz Description The is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz
ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
AUTOMOTIVE GRADE. 42 I T C = 100 C Continuous Drain Current, 10V 29 I DM. 170 P C = 25 C Power Dissipation 110 Linear Derating Factor
Features l Advanced Planar Technology l Low On-Resistance Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free,
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
Dual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel
Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches
PTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz
c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN MHz -960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2. Freescale Semiconductor
LIFETIME BUY Technical Data 9 MHz -96 MHz SiFET RF Integrated Power Amplifier The MHVIC9HNR integrated circuit is designed for GSM base stations, uses Freescale s newest High Voltage (6 Volts) LDMOS IC
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
RF Power GaN Transistor
Freescale Semiconductor Technical Data Document Number: A2G35S2--1S Rev., 5/216 RF Power GaN Transistor This 4 W RF power GaN transistor is designed for cellular base station applications requiring very
Characteristic Symbol Value Unit Thermal Resistance, Junction to Case. Test Conditions
Technical Data Document Number: Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications. It uses Freescale s newest High Voltage
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
transistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P
Rev 4.0 - May 2015 CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail,
NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W
CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad
which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN
Rev 4.1 May 2017 CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide
Features. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
RFHA1004TR7. 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz. Features. Applications. Ordering Information. Package: Air-Cavity Cu
25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
GTRA36282FC Thermally-Enhanced High Power RF GaN on SiC HEMT 28 W, 48 V, 34 36 MHz Description The GTRA36282FC is a 28-watt ( ) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard
CGH40006P. 6 W, RF Power GaN HEMT APPLICATIONS FEATURES
Rev 3. May 15 CGHP W, RF Power GaN HEMT Cree s CGHP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHP, operating from a volt rail, offers a general purpose, broadband
Characteristic Symbol Min Typ Max Unit. Intermodulation Distortion IMD 35 dbc All published data at T CASE = 25 C unless otherwise indicated
PTFB950FL Thermally-Enhanced High Power RF LDMOS FET 40 W, 90 990 MHz Description The PTFB950FL is a 40-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 90
QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
CMPA273575D 75 W, 2.7-3.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA273575D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm
Rev 3.1 - June 2015 CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
CCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db
Advance GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 3600 MHz Description The GTRA364002FC is a 400-watt (P SAT ) GaN on SiC high electron mobility transistor (HEMT)