MAMF Dual Channel SW/LNA Module for 5G M-MIMO

Transcription

1 MAMF Dual Channel SW/LNA Module for 5G M-MIMO Features > Covers GHz > Dual Channel architecture - 2 x 2-Stage Low Noise Amplifiers - S2 x High power (20W CW) switches > 31 db Gain > 1.5 db Noise Figure > Lead-Free 5 x 5 mm 32 Lead QFN Package > Samples available LNA Stg1 Ch1 Vd 32 GND 1 LNA Ch1 RFout & Vd Stg2 GND GND GND GND LNA Ch2 RFout & Vd Stg2 GND 8 ` 9 16 LNA Stg1 Ch2 Vd GND GND LNA Ch1 Vbias Enable LNA Ch2 Vbias Enable LNA Stg1 Ch1 RFin GND GND RXoutput Ch1 CHANNEL ONE CHANNEL TWO LNA Stg1 Ch2 RFin RXoutput Ch2 GND GND RF Antenna Ch1 RF Antenna Ch GND TXinput Ch1 GND GND GND GND Txinput Ch2 17 GND MAMF Tuned for the 3.5 GHz Application

2 MAGe S00 without Isolator MHz Features > VDS = 50 V > IDQ = 200 ma > Freq. = MHz > TCASE = 35 C > P2dB > 289 W > GP > 15.6 P2dB > ηd > P2dB > Continuous Wave

3 MAGe S00 with Isolator MHz Features > VDS = 50 V > IDQ = 200 ma > Freq. = MHz > TCASE = 35 C > P2dB > 288 W > GP > 15.8 P2dB > ηd > P2dB > Continuous Wave *Performance above is including circulator losses

4 MAGe S0P + MAGe S0P + circulator 2 Stage 300 W; MHz Features > VDS = 50 V > Freq. = MHz > TWATER = 20 C > P2dB > 275 W > GP > 28.4 P2dB > ηd > P2dB > Continuous Wave Frequenc y (GHz) Gain (db) Pout. (dbm) Pout (W) Eff. (%) Plate Temp. ( C) *Performance above includes circulator losses

5 MAGe G MHz Features > VDS = 50 V > IDQ = 380 ma > Freq. = MHz > TCu = 35 C > P2dB > 508 W > GP > P2dB > ηd > P2dB > Continuous Wave

6 MAGX S0P MHz Features > VDS = 50 V > IDQ = 45 ma > Freq. = MHz > TWATER = 20 C > P2dB > 15 W > GP > 15 P2dB > ηd > P2dB > Continuous Wave

7 MAGe S0P MHz Features > VDS = 50 V > IDQ = 75 ma > Freq. = MHz > TWATER = 20 C > P2dB > 60 W > GP > 17 P2dB > ηd > P2dB > Continuous Wave Symbol Parameter Min. Typ. Max. Unit Freq. Frequency GHz V DS Supply Voltage 50 V I DQ Quiescent Current 75 ma Pout Output power 31.0 dbm Pin W G 31.0 dbm Pin db Gcomp. Gain 31.0 dbm Pin db Eff 31.0 dbm Pin %

8 MAGe S0P + MAGe S0P 2 Stage 50 W; MHz Features > VDS = 50 V > Freq. = MHz > TWATER = 20 C > P2dB > 60 W > GP > 28.5 P2dB > ηd > P2dB > Continuous Wave Frequency (GHz) Gain (db) Gain Comp. (db) Pout. (dbm) Pout (W) Eff. (%) *Performance above includes output coupler losses

9 RFE Energy Tool-kit Enabling Engagement Easy to Use MACOM user friendly RF Energy tool-kit, enabling fast TTM Beta hardware designed and testing ongoing at selected customers Live demo: 30 W plasma jet & 300 W plasma jet ADLL signal controller and software (MACOM ALL & small signal DLL) Customer Application 2-stage 50 W and 300 W GaN-Si PA s (air cooled) Power supply Fwd and Rev power detector

10 MACOM Development Tool Kits Easy to use application development tool kits Functionality: all attributes (frequency, level, phase and PWM modulation) of the generated RF signal can be controlled either by the embedded powerful micro controller or from external (host-) controller. Hot switch between DLL and ALL PA Module Line-ups High efficiency Gen4 GaN-Si Controllers Couplers Control So ware & App Dev Analog Single channel (ALL) Digital Mul -channel (DLL) Or both combined (ADLL) One standard design for all kits Applica on dependant versions Power levels: 50 W (2,45 GHz) 300 W (2.45 GHz) 500 W (915 MHz) ALL: key feature is fast feedback loop (usec) 2.45 GHZ DLL: key feature is flexibility however with a slower feedback loop (msec) 2.45 GHz & 915 MHz High power robust coupler. Partners such as pinkrf can support customer directly

11 Plasma Lighting Application Using 2-Stage Gen4 GaN on Si RF Energy Module MACOM Gen4 GaN on Si > All Plastic Packaging Lineup > Driver: MAGe > Final: MAGe > VDS = 30 V (50 V Capable) > Freq. = GHz > POUT > 30 W (Continuous Wave) > Power Gain = 33 db (CW) > Line-up Drain Efficiency = 67% (CW) > Integrated FWD and REV Power Detection > Using MACOM Proprietary Exciter and Controller P IN = 15 mw P OUT = 30 W MAGe MAGe

12 Solid-State Cooking Application Using 2-Stage Gen4 GaN on Si RF Energy Module Easy To Use Gen4 GaN on Si Enables Excellent Cooking MACOM Gen4 GaN on Si > All Plastic Packaging Lineup > Driver: MAGe > Final: MAGe > VDS = 50 V > Freq. = GHz > POUT > 300 W (Continuous Wave) > Power Gain = 33 db (CW) > Line-up Drain Efficiency = 67% (CW) > Integrated FWD and REV Power Detection > Using MACOM Proprietary Exciter and Controller Solid-State Cooking

13 MAGX SOP MHz Features > VDS = 50 V > IDQ = 20 ma > Freq. = MHz > TCASE = 25 C > P2dB > 14 W > GP > W > ηd > 10 W Signal > CW

14 MAGX MHz Features > VDS = 50 V > IDQ = 100 ma > Freq. = MHz > TCASE = 25 C > P2dB > 135 W > GP > 16.7 P2dB > ηd > P2dB Signal > 300 usec, 10% duty

15 MAGX MHz Features > VDS = 50 V > IDQ = 100 ma > Freq. = MHz > TCASE = 25 C > P2dB > 150 W > GP > 15.1 P2dB > ηd > P2dB Signal > 300 usec, 10% duty

16 MAGX MHz Features > VDS = 50 V > IDQ = 200 ma > Freq. = MHz > TCASE = 25 C > P2dB > 330 W > GP > 18.2 P2dB > ηd > P2dB Signal > 300 usec, 10% duty Gain (db) Drain Efficiency (%) Gain_960 Gain_1090 Gain_ Eff_960 Eff_1090 Eff_ Output Power [dbm]

17 MAGX MHz Features > VDS = 50 V > IDQ = 200 ma > Freq. = MHz > TCASE = 25 C > P2dB > 295 W > GP > 18.7 P2dB > ηd > P2dB Signal > 300 usec, 10% duty Gain (db) Drain Efficiency (%) Gain_1200 Gain_1300 Gain_ Eff_1200 Eff_1300 Eff_ Output Power [dbm]

18 MAGX MHz Features > VDS = 50 V > IDQ = 200 ma > Freq. = MHz > TCASE = 25 C > P2dB > 295 W > GP > 17.5 P2dB > ηd > P2dB Signal > 300 usec, 10% duty > Mode -S

19 MAGX MHz Features > VDS = 50 V > IDQ = 200 ma > Freq. = MHz > TCASE = 25 C > P2dB > 500 W > GP > 15.5 P2dB > ηd > P2dB Signal > 300 usec, 10% duty

20 MAGP MHz Features > VDS = 50 V > IDQ = 100 ma > Freq. = MHz > TCASE = 25 C > P2dB > 380 W > GP > 13 P2dB > ηd > P2dB Signal > 150 usec, 10% duty

21 MAGX MHz Features > VDS = 50 V > IDQ = 100 ma > Freq. = MHz > TCASE = 25 C > P2dB > 170 W > GP > 13.3 P2dB > ηd > P2dB Signal > 200 usec, 20% duty

22 Non-Linear Transmission Line Comb Generators NLTL Comb Generators offer five key advantages relative to typical SRD products: > Lower Phase Noise improved phase noise performance of multiplied source > Lower Input Power reduced PA requirements and power consumption > Range of Input Frequency enables use of single part in several designs or use with a tunable source (up to 3x instead of a few %) > Higher Harmonic Power at Higher Frequencies SRD-based comb generators output power rapidly rolls off above 20 GHz > Reliable Construction based on monolithic circuits Part Number Power (dbm) Min Max Output Harmonics (dbm) MLPNC-7100-SMA MHz 400 MHz > 4 GHz > 12 GHZ > 20 GHz MLPNC-7100-SMT MHz 400 MHz > 4 GHz > 12 GHZ > 20 GHz MLPNC-7100S1-SMA MHz 250 MHz > 4 GHz N/A N/A MPLNC-7100S1-SMT MHz 250 MHz > 4 GHz N/A N/A MLPNC-7102-SMA MHz 600 MHz > 4 GHz > 12 GHZ > 20 GHz MLPNC-7102-SMT MHz 600 MHz > 4 GHz > 12 GHZ > 20 GHz MLPNC-7102S1-SMA MHz 700 MHz > 4 GHz > 12 GHz N/A MLPNC-7102S1-SMT MHz 700 MHz > 4 GHz > 12 GHz N/A MLPNC-7103-SMA MHz 1.3 GHz > 6 GHz > 18 GHZ > 30 GHz MLPNC-7103-SMT MHz 1.3 GHz > 6 GHz > 18 GHZ > 30 GHz MLPNC7103S1-SMA MHz 1.5 GHz > 4 GHz > 15 GHz N/A MLPNC7103S1-SMT MHz 1.5 GHz > 4 GHz > 15 GHz N/A

23 MACOM Standard Catalog RF and Microwave Signal Processing Hybrid Components and Passive Products > RF and Microwave Amplifiers > Signal Limiters and Limiting Amplifiers > Analog and Digital Voltage Controlled > > > > > > Attenuators RF and Microwave Mixers Stripline Couplers, Power Dividers, and Combiners Junction Hybrids RF Switches, Attenuators with Drivers (SMT) Drivers Heritage Component Product Lines - Watkins-Johnson - Stellex Microwave Systems - Adams Russell/Anzac/RHG - Phoenix Microwave - Omni-Spectra > Screening available on Standard Hybrid > Component Products Passive 50 OHM Products - Transformers - Mixers - Power Dividers - Couplers

24 New High Performance Surface Mount GHz SPDT Switch MASW Key Attributes > Wideband Performance > Surface Mount for easy integration > Low Insertion Loss / High Isolation > Up to 13 W CW Power Handling > Well matched (20 db Return Loss) Insertion Loss over Temperature Isolation over Forward Bias Current Ideal for 5G Applications

25 New Silicon Based Solutions Extend High Performance Narrowband VCO Portfolio Key Attributes > Low current consumption ( ma) > Excellent phase noise performance > Industry standard footprint > Cost effective Silicon > Custom frequency variants with quick turn Feature: MAOC Recent additions to the MACOM portfolio include: Part # Freq (GHz) MAOC MAOC MAOC MAOC Typical 10 khz Offset Typical 100 khz Offset Ask how MACOM can address your VCO needs

26 Complete Portfolio of Wireless Access Front-End Components and Modules MAAL (High gain, up to 6 GHz) MAIA (High Power Switch + LNA) MABC (DC - DC and Switch/LNA Bias Controller) N/C RF IN 1 8 N/C RF OUT /VDD N/C N/C Bias CKT N/C VBias x 2 mm PDFN x 5 mm QFN 5 x 5 mm QFN MAAL (High Linearity) MASW (50 W) MASW (80 W) MASW (120 W) MADR (Switch Bias Controller) 2 x 2 mm SOT x 4 mm QFN 3 x 3 mm QFN

27 Compact Tx and Rx FEMs for 5G M-MIMO Applications MAGb S0M GaN on Si PA > Freq: GHz > Pavg = 3 W > Psat > 44 dbm > IBW > 100 MHz > Eff > 35 dbm > > Gain > 27 db ACPR > 26 dbc MAMF Dual LNA/Switch > Freq: GHz > Gain > 31 db > NF < 1.5 db > OIP3 > 35 dbm > ISO Rx-Rx: >45 db > Vds = 5 V > Ids < 200 ma > Power handling > 20 W MAGb S0M MAGb S0M

28 New Voltage Variable Attenuator Covering 5 45 GHz MAAV Key Attributes > Medium power handling > Surface Mount for easy integration > Small footprint (3 mm x 3 mm) > Excellent dynamic range (> 30 db) > High Linearity (30 dbm IIP3) Insertion Loss v s Control Voltage Input IP3 vs. Attenuation, SCL PIN = 12 dbm Wideband Performance for Multiple Applications

29 Fast MRI Protection Diode MADP T (Surface Mount MELF Diode) MADP T (Axial Leaded Diode) Key Attributes > Ultra Low-Magnetic Construction > Glass Package > High Current Handling > Surface Mount or Axial Leaded Versions Available > Low loss / High Isolation

30 K/Ka-Band SP4T Switch MASW Key Attributes > Operating Frequency GHz > Integrated Bias Network > Broadband Performance > Low Loss/ High Isolation > Small Cell Backhaul Applications

31 40 W B3 GaN on Si Basestation Applications High Efficiency Opens New Opportunities For Basestation MAGb A0P > Asymmetrical Doherty > Plastic TO-272S-4 Package > Freq. = MHz B3, Vds = 50 V > Peak Power > 350 W POUT = 47.5 dbm (7.8 db OBO) - w/ 1C LTE 7.5 db PAR - deff > 54% - Gain = 16 db POUT = 48.3 dbm (7 db OBO) - w/ 1C LTE 7.5 db PAR - deff > 56% - Gain = 15.5 db TO-272S-4

32 60 W B5 GaN on Si Basestation Applications MAGb S0S > Symmetrical Doherty > Freq. = MHz B5, Vds = 50 V > Peak Power > 550 W POUT = 49.5 dbm ( 8.1 db OBO) - w/ 1C LTE 7.5 db PAR - deff > 57% - Gain = 19.5 db POUT = 50.6 dbm (7 db OBO) - w/ 1C LTE 7.5 db PAR - deff > 60% - Gain = 19.2 db Ceramic AC-780S-4 Package

33 Family of New Broadband VCOs > Best in Class Phase Noise > Excellent Temperature Stability > +5 V Bias Operation > Low Current Consumption > Lead-Free 24-Lead 4 mm QFN Package 4 x 4 mm QFN Package Pre-Release Part Number In Development MAOC GHz MAOC GHz MAOC GHz Vtune RF MAOC GHz MAOC MAOC MAOC MAOC GHz 4-8 GHz 3-6 GHz 2-4GHz Vcc DC Frequency (GHz)

34 Family of New Wideband Low Noise Amplifiers DC-40 GHz > Fully Matched Across Band > Positive Bias Operation > 2 mm and 5 mm QFN Packages 2 x 2 mm DFN Package 5 x 5 mm QFN Package Released Part Number and Frequency Pre-Release Noise Figure (db) MAAL , 2-18 GHz MAAL DIE, DC-26.5 GHz MAAL , DC-26.5 GHz MAAL , GHz Frequency (GHz)

35 Wired Broadband Family of New Single Ended Wideband Amplifiers 75 Ω Single Ended Amplifier Family > MHz > 5 V with adjustable current bias > Flat gain response across the full band > Downstream or Upstream applications > Layout compatible product family > Industry standard SOT-89 lead free package Application Schematic MAAM Gain Parameter Units MAAL MAAM MAAM MAAM Frequency MHz Gain db Noise Figure db IRL/ORL db 23/23 20/20 18/20 18/20 OIP2 dbm OIP3 dbm P1dB dbm Voltage V Current ma

36 Wired Broadband Family of New Differential Wideband Amplifiers 75 Ω Differential Amplifier Family > MHz > 5 V with adjustable current bias > Flat gain response across the band > Downstream or Upstream applications > Layout compatible product family > Industry standard SOIC-8EP lead free package Application Schematic MAAM Gain Parameter Units MAAM MAAM MAAM Frequency MHz Gain db Noise Figure db IRL/ORL db 20/20 20/20 20/20 OIP2 dbm OIP3 dbm P1dB dbm Voltage V Current ma

37 E-Band Tx & Rx Modules > Wideband GHz Performance > Surface Mount for easy integration (all high frequency components contained within module enabling the use of low cost radio board material) > Waveguide I/P (Rx) & O/P (Tx) > Tx module integrates IQ Mixer, O/P Driver Amplifier, O/P Power Amplifier, LOx8 Multiplier, LO Buffer Amplifiers & Power Detectors > Rx Module integrates IQ Mixer, LNA, LOx8 Multiplier & LO Buffer Amplifiers > Direct Conversion or IF Operation > Excellent Turn down performance > Matching VCO Solutions available MAMF Mhz IF MADC Input 21.4 MHz IF MAMF Tx Module, MADC Rx Module