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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 5mΩ Features Max r DS(on) = 5mΩ at V GS = -0V, I D = -3.0A Max r DS(on) = 80mΩ at V GS = -.5V, I D = -.5A V F < A V F < 2A Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility RoHS Compliant SO-8 General Description November 2006 The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Application MOSFET Maximum Ratings T A = 25 C unless otherwise noted Thermal Characteristics C C D Pin D A A S G DC - DC Conversion Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V Drain Current -Continuous (Note a) -3 I D -Pulsed -6 P D Power Dissipation (Note a).6 W E AS Single Pulse Avalanche Energy (Note 2) 6 mj V RRM Schottky Repetitive Peak Reverse Voltage -20 V I O Schottky Average Forward Current (Note a) -2 A T J, T STG Operating and Storage Junction Temperature Range -55 to +50 C D D C C G S A A A tm R θja Thermal Resistance, Junction to Ambient (Note a) 78 R θjc Thermal Resistance, Junction to Case (Note ) 0 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDFS2P753Z FDFS2P753Z SO-8 330mm 2mm 2500 units 2006 Fairchild Semiconductor Corporation

3 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -250µA, V GS = 0V -30 V BV DSS T J Breakdown Voltage Temperature Coefficient I D = -250µA, referenced to 25 C -2 mv/ C V DS = -2V, - I DSS Zero Gate Voltage Drain Current µa V GS = 0V T J = 25 C -00 I GSS Gate to Source Leakage Current V GS = ±25V, V DS = 0V ±0 µa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -250µA V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient I D = -250µA, referenced to 25 C 5 mv/ C V GS = -0V, I D = -3.0A 69 5 V r DS(on) Drain to Source On-Resistance GS = -.5V, I D = -.5A 5 80 mω V GS = -0V, I D = -3.0A, T J = C g FS Forward Transconductance V DS = -5V, I D = -3.0A 6 S Dynamic Characteristics C iss Input Capacitance pf V DS = -0V, V GS = 0V, C oss Output Capacitance 80 0 pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance f = MHz 8 Ω Switching Characteristics t d(on) Turn-On Delay Time 7 ns t V DD = -0V, I D = -3.0A r Rise Time 3 50 ns V GS = -0V, R GEN = 6Ω t d(off) Turn-Off Delay Time 8 33 ns t f Fall Time ns Q g(tot) Total Gate Charge at -0V V GS = 0V to -0V nc Q V DD = -0V g(.5) Total Gate Charge at -.5V V GS = 0V to -.5V nc I D = -3.0A Q gs Gate to Source Gate Charge.3 nc Q gd Gate to Drain Miller Charge.6 nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = 0V, I S = -2.0A (Note 3) V t rr Reverse Recovery Time ns I F = -3.0A, di/dt = 00A/µs Q rr Reverse Recovery Charge 2 nc Schottky Diode Characteristics I R Reverse Leakage V R = -20V V F Forward Voltage I F = A I F = 2A T J = 25 C -90 µa T J = 25 C -66 ma T J = 25 C 0.5 T J = 25 C 0.39 T J = 25 C 0.58 V T J = 25 C

4 Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user s board design. a) 78 C/W when mounted on a 0.5in2 pad of 2 oz copper 2: Starting, L = 3mH, I AS = 2A, V DD = 27V, V GS = 0V 3: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. b) 35 C/W when mounted on a minimun pad 3

5 Typical Characteristics T J = 25 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) V GS = -0V V GS = -3.5V Figure PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX V GS = -5V V GS = -.5V V GS = -V -VDS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.0 V GS = -0V ID, DRAIN CURRENT(A) On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On-Resistance vs Junction Temperature I D = -3A V GS = -0V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX T J = 50 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) rds(on), DRAIN TO -IS, REVERSE DRAIN CURRENT (A) SOURCE ON-RESISTANCE (mω) V GS = 3.5V Figure. I D = -3A V GS = V T J = 50 o C PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX V GS = -.5V V GS = -5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX V GS, GATE TO SOURCE VOLTAGE (V) V GS = 0V On-Resistance vs Gate to Source Voltage T J = 50 o C T J = -55 o C E V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current

6 Typical Characteristics T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) -ID, DRAIN CURRENT (A) Q g, GATE CHARGE(nC) Figure V DD = -5V V DD = -5V V DD = -0V V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage t AV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability 00ms OPERATION IN THIS 0. s AREA MAY BE LIMITED BY r SINGLE PULSE 0s DS(on) TJ = MAX RATED DC T A = 25 O C VDS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area 00us ms 0ms CAPACITANCE (pf) -I D, DRAIN CURRENT (A) P(PK), PEAK TRANSIENT POWER (W) f = MHz V GS = 0V R θja = 78 o C/W V GS = -0V V GS = -.5V C iss C oss C rss T A, AMBIENT TEMPERATURE ( o C) Figure 0. Maximum Continuous Drain Current vs Case Temperature V GS = -0V 0 FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 50 T A I = I SINGLE PULSE t, PULSE WIDTH (s) Figure 2. Single Pulse Maximum Power Dissipation T A = 25 o C 30 5

7 Typical Characteristics T J = 25 C unless otherwise noted I F, REVERSE LEAKAGE CURRENT (A) E Figure 3. NORMALIZED THERMAL IMPEDANCE, Z θja V F, REVERSE VOLTAGE (V) 0.0 Schottky Diode Forward Voltage Figure. DUTY CYCLE-DESCENDING ORDER D = I R, REVERSE LEAKAGE CURRENT (ma) 0 0. t, RECTANGULAR PULSE DURATION (s) Figure 5. Transient Thermal Response Curve E V R, REVERSE VOLTAGE (V) Schottky Diode Reverse Current t t 2 NOTES: DUTY FACTOR: D = t /t SINGLE PULSE PEAK T J = P DM x Z θja x R θja + T A P DM 6

8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM mwsaver OptoHiT OPTOLOGIC OPTOPLANAR * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. 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9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 800 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDFS2P753Z