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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 P-Channel 2.5V Specified PowerTrench MOSFET November 23 General Description This P-Channel 2.5V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection Features.6 A, 2 V. R DS(ON) = 5 V GS = 4.5 V R DS(ON) = 55 V GS = 2.5 V Fast switching speed High performance trench technology for extremely low R DS(ON) SuperSOT TM -3 provides low R DS(ON) and 3% higher power handling capability than SOT23 in the same footprint D D S TM SuperSOT -3 G G S Absolute Maximum Ratings TA=25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 2 V V GSS Gate-Source Voltage ±8 V I D Drain Current Continuous.6 A P D Pulsed 5 Maximum Power Dissipation (Note a).5 (Note b).46 T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 25 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 75 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity mm 3 units W 2 Fairchild Semiconductor Corporation Rev F(W)

3 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 2 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 6 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 8 V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = 8 V, V DS = V na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 2.7 mv/ C R DS(on) Static Drain Source V GS = 4.5 V, I D =.6 A 88 5 mω On Resistance V GS = 2.5 V, I D =.3 A 7 55 V GS = 4.5 V, I D =.6 A, T J=25 C 6 65 I D(on) On State Drain Current V GS = 4.5 V, V DS = 5 V 5 A g FS Forward Transconductance V DS = 5 V, I D =.6 A 6 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 45 pf C oss Output Capacitance f =. MHz 75 pf C rss Reverse Transfer Capacitance 33 pf Switching Characteristics (Note 2) t d(on) Turn On Delay Time V DD = V, I D = A, 2 ns t r Turn On Rise Time V GS = 4.5 V, R GEN = 6 Ω 2 ns t d(off) Turn Off Delay Time 6 29 ns t f Turn Off Fall Time ns Q g Total Gate Charge V DS = V, I D =.6 A, nc Q gs Gate Source Charge V GS = 4.5 V. nc Q gd Gate Drain Charge.7 nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current.42 A V SD Notes: Drain Source Diode Forward Voltage V GS = V, I S =.42 (Note 2).7.2 V. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 25 C/W when mounted on a.2 in 2 pad of 2 oz. copper. b) 27 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width 3 µs, Duty Cycle 2.% Rev F(W)

4 Typical Characteristics -I D, DRAIN CURRENT (A) 5 V GS = -4.5V -2.5V -3.5V -2.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -2.V -2.5V -3.V -3.5V -4.5V V DS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -.6A V GS = -4.5V T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM).34 I D = -.8 A T A = 25 o C.4. T A = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 5 V DS = - 5V T A = -55 o C 25 o C V GS = V -I D, DRAIN CURRENT (A) o C... T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev F(W)

5 Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) 5 I D = -.6A V DS = -5V V -V C ISS COSS f = MHz VGS = V Q g, GATE CHARGE (nc) C RSS V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. -I D, DRAIN CURRENT (A).. R DS(ON) LIMIT V GS =-4.5V SINGLE PULSE R θja = 27 o C/W T A = 25 o C DC s s ms ms. -V DS, DRAIN-SOURCE VOLTAGE (V) ms P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) SINGLE PULSE R θja = 27 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE..... t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. RθJA(t) = r(t) x RθJA R θja = 27 C/W P(pk) t t2 TJ - TA = P * R θja(t) Duty Cycle, D = t / t2 Rev F(W)

6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66

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