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2 Agilent N57, N572, Series, Series, Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications The N57, N572, 82-28/ / are passivated Schottky barrier diodes which use a patented guard ring design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. Outline 5.4 (.6).36 (.4).93 (.76).73 (.68) CATHODE.4 (.) MIN (.7) 3.8 (.) Features Low Turn-On Voltage As Low as.34 V at ma Pico Second Switching Speed High Breakdown Voltage Up to 7 V Matched Characteristics Available The is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The is particularly well suited for the UHF mixing needs of the CATV marketplace. The Series and devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low /f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers..4 (.) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Maximum Ratings Junction Operating and Storage Temperature Range , to + C N57, N572, 82-28// C to to + C DC Power Dissipation (Measured in an infinite heat sink at T CASE = C) Derate linearly to zero at maximum rated temperature , mw N57, N572, 82-28//... 2 mw mw Peak Inverse Voltage... V BR

3 2 Package Characteristics Outline 5 Lead Material... Dumet Lead Finish % Tin-Lead Max. Soldering Temperature for 5 sec Min. Lead Strength...4 pounds pull Typical Package Inductance N57, N572: nh 28 Series: nh 23 Series, 29: nh Typical Package Capacitance N57, N572:....2 pf 28 Series:....2 pf 23 Series, 29:....7 pf The leads on the Outline 5 package should be restricted so that the bend starts at least /6 inch from the glass body. Outline 5 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. Electrical Specifications at T A = C General Purpose Diodes Min. Max. V F = V Max. Max. Max. Breakdown Forward at Forward Reverse Leakage Capaci- Part Package Voltage Voltage Current Current tance Number Outline V BR (V) V F (mv) I F (ma) I R (na) at V R (V) C T (pf) N N * 34 *. Test I R = µa I F = ma *V F =.45 V V R = V Conditions *I R = µa f =. MHz Note: Effective Carrier Lifetime (τ) for all these diodes is ps maximum measured with Krakauer method at 5 ma except for which is measured at 2 ma.

4 3 Low /f (Flicker) Noise Diodes Min. Max. V F = V Max. Max. Max. Part Breakdown Forward at Forward Reverse Leakage Capaci- Number Package Voltage Voltage Current Current tance 82- Outline V BR (V) V F (mv) I F (ma) I R (na) at V R (V) C T (pf) Test I R = µa I F = ma V R = V Conditions f =. MHz Note: Effective Carrier Lifetime (τ) for all these diodes is ps maximum measured with Krakauer method at 2 ma. Matched Pairs and Quads Basic Matched Matched Part Number Pair Quad Batch 82- Unconnected Unconnected Matched [] Test Conditions 29 V F at I F =., ma V F at I F =.5, 5 ma V F = 2 mv V F = 2 mv *I F = ma C O at f =. MHz V F at I F = ma V F = mv C O at f =. MHz C O =. pf V F at I F = ma V F = mv C O at f =. MHz C O =. pf Note:. Batch matched devices have a minimum batch size of devices. SPICE Parameters Parameter Units B V V C J pf E G ev I BV A E-5 E-5 E-5 E-5 E-5 E-5 I S A 2.2 x E-9. x E-9.3 x E x E-8 7 x.e-9 E-8 N R S Ω 5 5 P B V P T M

5 4 Typical Parameters.. C C C C I R (na), 75 T A = C R D - DYNAMIC RESISTANCE (Ω) C T - CAPACITANCE (pf) V F FORWARD VOLTAGE (V) Figure. I-V Curve Showing Typical Temperature Variation for Series and Schottky Diodes Figure and Typical Capacitance vs. Reverse Voltage. 5 5 V BR (V) Figure Series Typical Reverse Current vs. Reverse Voltage at Various Temperatures C + C + C C Figure 5. I-V Curve Showing Typical Temperature Variation for or N57 Schottky Diodes.. Figure Series and Typical Dynamic Resistance (R D ) vs. Forward Current (I F ).,, Figure 6. (82-28 OR N57) Typical Variation of Reverse Current (I R ) vs. Reverse Voltage (V R ) at Various Temperatures. T A = C C T - CAPACITANCE (pf) Figure 7. (82-28 or N57) Typical Capacitance (C T ) vs. Reverse Voltage (V R ) C + C + C C Figure 8. I-V Curve Showing Typical Temperature Variation for the or N572 Schottky Diode., Figure 9. (82-28 or IN572) Typical Variation of Reverse Current (I R ) vs. Reverse Voltage (V R ) at Various Temperatures. T A = C

6 5 Typical Parameters, continued,... + C + C + C C Figure. I-V Curve Showing Typical Temperature Variation for the Schottky Diode., Figure. (82-28) Typical Variation of Reverse Current (I R ) vs. Reverse Voltage (V R ) at Various Temperatures. T A = C.. + C + C + C C Figure 2. I-V Curve Showing Typical Temperature Variations for Schottky Diode.,, + C + C +75 C + C Figure 3. ( ) Typical Variation of Reverse Current (I R ) vs. Reverse Voltage (V R ) at Various Temperatures. C T - CAPACITANCE (pf) /28 IN Figure 4. Typical Capacitance (C T ) vs. Reverse Voltage (V R ). R D - DYNAMIC RESISTANCE (Ω) , N N Figure 5. Typical Dynamic Resistance (R D ) vs. Forward Current (I F ).

7 Diode Package Marking N5xxx 82-xxxx would be marked: Nx xx xxx xx YWW YWW where xxxx are the last four digits of the Nxxxx or the 82-xxxx part number. Y is the last digit of the calendar year. WW is the work week of manufacture. Examples of diodes manufactured during workweek 45 of 999: N would be marked: N Part Number Ordering Information Part Number No. of devices Container 82-28xx#T/N57xx#T 2 Tape & Reel 82-28xx#T/ N57xx#T Tape & Reel 82-28xx/ N57xx Antistatic bag For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: + (8) or (96) Europe: +49 () China: Hong Kong: (+65) India, Australia, New Zealand: (+65) Japan: (+8 3) (Domestic/International), or (Domestic Only) Korea: (+65) Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) Taiwan: (+65) Data subject to change. Copyright 999- Agilent Technologies, Inc. Obsoletes E June 2, EN

Agilent HCPL-354 AC Input Phototransistor Optocoupler SMD Mini-Flat Type

Agilent HCPL-354 AC Input Phototransistor Optocoupler SMD Mini-Flat Type Agilent HCPL-34 AC Input Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Description The HCPL-34 contains a phototransistor, optically coupled to two light emitting diodes connected inverse parallel.