Agilent 4N35 Phototransistor Optocoupler General Purpose Type

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1 Agilent N3 Phototransistor Optocoupler General Purpose Type Data Sheet Description The N3 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Response time, t r, is typically 3 µs and minimum CTR is % at input current of ma. Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 Schematic ANODE + CATHODE Ordering Information Specify part number followed by Option Number (if desired). N3-XXX Option Number 6 = VDE88 Option W =." Lead Spacing Option 3 = Lead Bend SMD Option = Tape and Reel Packaging Option V F I F 6 BASE I C COLLECTOR Features High Current Transfer Ratio (CTR: min. % at I F = ma, V CE = V) Response time (t r : typ., 3 µs at V CE = V, I C = ma, R L = Ω) Input-output isolation voltage (V iso = 3 Vrms) Dual-in-line package UL approved CSA approved VDE approved Options available: Leads with." (.6 mm) spacing (W) Leads bends for surface mounting (3) Tape and reel for SMD () VDE 88 approvals (6) Applications I/O interfaces for computers System appliances, measuring instruments Signal transmission between circuits of different potentials and impedances 3. ANODE. CATHODE 3. NC. EMITTER. COLLECTOR 6. BASE EMITTER CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

2 Package Outline Drawings PIN ONE DOT DATE CODE 6 A N3 V YYWW 3 TYPE NUMBER 6. ±. (.6) DIMENSIONS IN MILLIMETERS AND (INCHES) OPTION CODE FOR OPTION 6 ONLY.8 ±. (.) 7.3 ±. (.87). ±. (.) 3. ±. (.38) 3.3 ±. (.3). ±. (.). TYP. (.) 7.6 ±.3 (.3).3 +./-. (.) 7.6 ~ 9.98 Package Outline Option W 7.3 ±. (.87) 7.6 ±.3 (.3) 6. ±. (.6) 3. ±. (.38) 6.9 ±. (.7).8 ±. (.).3 ±. (.9).3 +./-. (.). ±. (.). ±. (.).6 ±. (.) DIMENSIONS IN MILLIMETERS AND (INCHES) Package Outline Option ±. (.87) 7.6 ±.3 (.3) 6. ±. (.8) 3. ±. (.38).3 +./-. (.). ±. (.7). ±. (.).3 ±. (.). ±. (.39).6 ±.3 (.) DIMENSIONS IN MILLIMETERS AND (INCHES)

3 Absolute Maximum Ratings Storage Temperature, T S Operating Temperature, T A Lead Solder Temperature, max. (.6 mm below seating plane) Average Forward Current, I F Reverse Input Voltage, V R Input Power Dissipation, P I Collector Current, I C Collector-Emitter Voltage, V CEO Emitter-Collector Voltage, V ECO Collector-Base Voltage, V CBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for minute, R.H. = ~ 6%) C to + C C to + C 6 C for s 6 ma 6 V mw ma 3 V 7 V 7 V 3 mw 3 mw 3 Vrms Electrical Specifications (T A = C) Parameter Symbol Min. Typ. Max. Units Test Conditions Forward Voltage V F.. V I F = ma Reverse Current I R µa V R = V Terminal Capacitance C t pf V =, f = KHz Collector Dark Current I CEO na V CE = V, I F =, T A = C µa V CE = 3 V, I F =, T A = C Collector-Emitter Breakdown Voltage BV CEO 3 V I C =. ma, I F = Emitter-Collector Breakdown Voltage BV ECO 7 V I E = µa, I F = Collector-Base Breakdown Voltage BV CBO 7 V I C =. ma, I F = Collector Current I C ma I F = ma *Current Transfer Ratio CTR % V CE = V Collector-Emitter Saturation Voltage V CE(sat).3 V I F = ma, I C = ma Response Time (Rise) t r 3 µs V CC = V, I C = ma Response Time (Fall) t f 3 µs R L = Ω Isolation Resistance R iso x x Ω DC V ~ 6% R.H. Floating Capacitance C f. pf V =, f = MHz I * CTR = C x % I F 3

4 P C COLLECTOR POWER DISSIPATION mw T A = 7 C T A = C T A = C T A = C T A = - C V F FORWARD VOLTAGE V Figure. Forward current vs. temperature. Figure. Collector power dissipation vs. temperature. Figure 3. Forward current vs. forward voltage. CTR CURRENT TRANSFER RATIO % V CE = V T A = C R BE = kω kω... I C COLLECTOR CURRENT ma 3 T A = C IF = ma P C (MAX.) I F = ma I F = ma I F = ma V CE COLLECTOR-EMITTER VOLTAGE V RELATIVE CURRENT TRANSFER RATIO % - I F = ma V CE = V - 7 Figure. Current transfer ratio vs. forward current. Figure. Collector current vs. collectoremitter voltage. Figure 6. Relative current transfer ratio vs. temperature. V CE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V I F = ma I C = ma - 7 I CEO COLLECTOR DARK CURRENT A V CE = V RESPONSE TIME µs.... V CE = V I C = ma T A = C tf tr td ts... R L LOAD RESISTANCE kω Figure 7. Collector-emitter saturation voltage vs. temperature. Figure 8. Collector dark current vs. temperature. Figure 9. Response time vs. load resistance.

5 VOLTAGE GAIN AV db R L = kω R L = kω R L = Ω V CE = V I C = ma T A = C -. V CE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V T A = C I C =. ma I C = ma I C = ma I C = 3 ma I C = 6 ma I C = 7 ma f FREQUENCY khz Figure. Frequency response. Figure. Collector-emitter saturation voltage vs. forward current. Test Circuit for Response Time Test Circuit for Frequency Response V CC V CC INPUT R D R L OUTPUT R D R L OUTPUT ~ INPUT OUTPUT % 9% td ts tr tf

6 Data subject to change. Copyright Agilent Technologies, Inc. October 9, 988-EN

4N25 Phototransistor Optocoupler General Purpose Type. Features

4N25 Phototransistor Optocoupler General Purpose Type. Features 4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an