200mW, 4 PIN DIP Phototransistor Photocoupler
|
|
- Joanna Weaver
- 6 years ago
- Views:
Transcription
1 2mW, 4 PIN DIP Phototransistor Photocoupler FEATURES Current transfer ratio (CTR: MIN.8% at IF=5mA, VCE=5V) High isolation voltage between input and output (Viso=5V rms) Creepage distance>7.62mm UL Recognized File # E Compliant to RoHS directive 211/65/EU and in accordance to WEEE 22/96/EC Halogen-free according to IEC APPLICATIONS Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances,such as fan heaters,etc Signal transmission between circuits of different potentials and impedances KEY PARAMETERS PARAMETER VALUE UNIT CTR 8-6 % V CEO 8 V P tot 2 mw I C 5 ma V iso 5 Vrms Package Configuration DIP-4 DIP-4M SOP-4 Single Dice MECHANICAL DATA Case: DIP-4, DIP-4M, SOP-4 Molding compound: UL flammability classification rating 94V- Moisture sensitivity level: level 1, per J-STD-2 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-2 Meet JESD 21 class 1A whisker test Polarity: Indicated by cathode band 1 Version:C1612
2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL PART NUMBER UNIT Forward current I F 5 ma Input Reverse voltage V R 6 V Power dissipation P 7 mw Collector-emitter voltage V CEO 8 V Output Emitter-collector voltage V ECO 6 V Collector current I C 5 ma Collector power dissipation P C 15 mw Total power dissipation P tot 2 mw Isolation voltage V iso 5 Vrms Rated impulse isolation voltage V IOTM 6 V Rated repetitive peak isolation voltage V IORM 63 V Operating temperature T opr -4 to +1 C Storage temperature T stg -55 to +125 C Soldering temperature T sol 26 C ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Forward voltage I F =2mA V F V Input Reverse current V R =4V I R 1 μa Terminal capacitance V=, f=1khz C t 3 25 pf Collector dark current V CE =2V,I F = I CEO 1-7 A Output Transfer Characteristics Collector-emitter breakdown voltage I C =.1mA, I F = BV CEO 8 V Emitter-collector breakdown voltage I E =1μA, I F = BV ECO 6 V Collector current IC ma Current transfer I F =5mA, V CE =5V ration(note 1) CTR 8 6 % Collector-emitter saturation voltage I F =2mA, I C =1mA V CE(sat).1.2 V Isolation resistance DC5V, 4 to 6%RH R ISO 5x Ω Floating capacitance V=, f=1mhz C f.6 1. pf V CE =5V, I C =2mA, Cut-off frequency f c 8 KHz R L =1Ω, -3dB Response time Rise time V CE =2V, I C =2mA, Notes: 1. Classification table of current transfer ratio is shown below t r 4 18 μs Fall time R L =1Ω t f 3 18 μs 2 Version:C1612
3 RANK TABLE OF CURRENT TRANSFER RATIO, CTR RANK MARK MIN (%) MAX (%) A 8 16 B C 2 4 D 3 6 ORDERING INFORMATION PART NO. (Note 1&2) PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING TPC817x C9 DIP-4 1 / TUBE TPC817Mx C9 G DIP-4M (Leads with.4" spacing) 1 / TUBE TPC817S1x RA SOP-4 2K / 13" Reel Notes: 1. x defines CTR rank from A to D 2. Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE PACKING CODE SUFFIX DESCRIPTION TPC817A C9G TPC817A C9 G Green compound 3 Version:C1612
4 Collector-Emitter Saturation Voltage VCE(sat) Forward Current IF(mA) IF, Instantaneous Forward Current (ma) Collector Power Dissipation, Pc (mw) TPC817 SERIES CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Fig. 1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature, Ta ( C) Ambient Temperature, Ta ( C) Fig.3 Collector-Emitter Saturation Voltage vs 6 Forward Current 1 Fig.4 Forward Current vs. Forward Voltage 5 75 C mA 5mA 3mA 1mA C -25 C C 25 C 1 I C =.5mA Forward Current I F(mA) Forward Voltage V F (V) 4 Version:C1612
5 Relative Current Transfer Ratio (%) Collector-Emitter Saturation Voltage VCE(sat) (A) Current Transfer Ratio (%) Collector Current Ic(mA) TPC817 SERIES CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Fig. 5 Current Transfer Ratio vs. Fig.6 Collector Current vs. Forward Current Collector-Emitter Voltage I F =3mA 16 Pc(max) mA mA 4 V CE =5V 2 5mA Forward Current I F(mA) Collector-Emitter Voltage V CE(V) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs Ambient Temperature I F =5mA V CE =5V I F =2mA I C =1mA Ambient Temperature Ta( C) Ambient Temperature Ta( C) 5 Version:C1612
6 Voltage Gain Av(dB) Collector Dark Current ICEO(A) Response Time (μs) TPC817 SERIES CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Fig. 9 Collector Dark Current vs. Fig.1 Response Time vs. 1.E-5 Ambient Temperature 1 Load Resistance 1.E-6 V CE =2V 1 I C =2mA V CE =2V 1.E-7 tr tf 1 1.E-8 td 1.E-9 1 ts 1.E Ambient Temperature Ta( C) Load Resistance R L(kΩ) Fig.11 Frequency Response RL=1kΩ 1kΩ I C =2mA V CE =5V 1Ω Frequency f(khz) 6 Version:C1612
7 TEST CIRCUIT RESPONSE TIME TEST CIRCUIT FOR FREQUENCY RESPONSE 7 Version:C1612
8 PACKAGE OUTLINE DIMENSION DIP-4 Unit(mm) DIM. Min Max A B C D E 2 8 F 1.25 typ. H J K L.5 typ. M N.4 typ. DIP-4M (Leads with.4" spacing) Unit(mm) DIM. Min Max A B C D F 1.25 typ. G.4 typ. J K L.5 typ. M N Version:C1612
9 PACKAGE OUTLINE DIMENSION SOP-4 Unit(mm) DIM. Min Max A B C D F 1.25 typ. G.4 typ. H..2 J K L 1.25 typ. M MARKING Notes: 817: Product type B: CTR rank mark YWW: Date code 9 Version:C1612
10 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 1 Version:C1612
200mW, 4 PIN DIP Phototransistor Photocoupler
2mW, 4 PIN DIP Phototransistor Photocoupler FEATURES Current transfer ratio (CTR: MIN.8% at IF=5mA, VCE=5V) High isolation voltage between input and output (Viso=5V rms) High collector-emitter voltage
More information200mW, V High Voltage SMD Switching Diode
200mW, 120-250V High Voltage SMD Switching Diode FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance
More information300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
More information300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
More information100mA, 75V Switching Diode
ma, 75V Switching Diode FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level, per J-STD-020 Compliant to RoHS directive
More information200mW High Speed SMD Switching Diode
200mW High Speed SMD Switching Diode FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 20/65/EU and in accordance to WEEE
More information0.3W, PNP Plastic-Encapsulate Transistor
0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to
More information4 1N5400G-K - 1N5408G-K Taiwan Semiconductor. 3A, 50V V Glass Passivated Rectifier
4 1N5400-1N5408 3A, 50V - 0V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low V F High reliability High surge current capability Low power loss, high efficiency
More information10A, 100V - 200V Trench Schottky Rectifier
A, 0V - 200V Trench Schottky Rectifier TSDH0CW - TSDH200CW FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency
More information20A, 300V Trench Schottky Rectifier
20A, 300V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ High efficiency High forward surge capability Compliant
More information4 1N4001G-K - 1N4007G-K Taiwan Semiconductor. 1A, 50V V Glass Passivated Rectifier
4 N400 - N4007 A, 50V - 00V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency
More information30A, 100V - 200V Trench Schottky Rectifiers
30A, 0V - 200V Trench Schottky Rectifiers TSD30H0CW - FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High
More information2A, 800V V Glass Passivated High Efficient Rectifier
2A, 800V - 1000V Glass Passivated High Efficient Rectifier FEATURES Glass passivated chip junction High efficiency, Low V F High current capability High surge current capability Low power loss Compliant
More information2A, 1000V Glass Passivated Bridge Rectifier
2A, 000V Glass Passivated Bridge Rectifier FEATURES Glass passivated junction Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge current capability
More information0.8A, 600V V Glass Passivated Bridge Rectifier
MBS6-K - MBS-K 0.8A, 600V - 00V Glass Passivated Bridge Rectifier FEATURES Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge current capability
More information3A, 400V V Glass Passivated Bridge Rectifier
304G - 307G 3A, 400V - 000V Glass Passivated Bridge Rectifier FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High surge current capability UL
More informationPARAMETER SYMBOL TESD5V0V4UA UNIT Marking code on the device
V WM =5V,.8pF ESD Protection Array FEATURES Meet IEC61-4-2(ESD) ±17kV(air), ±12kV(contact) Working Voltage: 5V Compliant to RoHS directive 211/65/EU and in accordance to WEEE 22/96/EC Halogen-free according
More informationTrench Schottky Rectifier
Trench Schottky Rectifier TST40L0CW thru FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge
More information2A, 50V - 600V Glass Passivated Super Fast Rectifier
SF21 - SF28 2A, 50V - 600V Glass Passivated Super Fast Rectifier FEATURES Glass passivated chip junction High efficiency, Low V F High current capability High surge current capability Low power loss Compliant
More information2A, 600V Surface Mount Super Fast Rectifier
2A, 600V Surface Mount Super Fast Rectifier FEATURES Fast forward recovery time for high frequency operation Negligible switching losses Reduces switching and conduction losses High surge current capability
More information1A, 400V ESD Capability Rectifier
A, 400V ESD Capability Rectifier FEATURES High ESD capability Glass passivated chip junction Ideal for automated placement Low forward voltage drop High surge current capability Compliant to RoHS Directive
More information200W, 5V - 100V Surface Mount Transient Voltage Suppressor
200W, 5V - 100V Surface Mount Transient Voltage Suppressor FEATURES Photo Glass passivated junction Low power loss, high efficiency Ideal for automated placement Excellent clamping capability Typical I
More information3A, 45V - 60V Trench Schottky Rectifier
3A, 45V - 60V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Lower power loss/ high efficiency High forward surge capability
More informationGlass Passivated Bridge Rectifier
Glass Passivated Bridge Rectifier UR3KB60 - UR3KB00 FEATURES Ideal for printed circuit board High case dielectric strength High surge current capability UL Recognized File # E-326243 Compliant to RoHS
More information6600W, 10V 43V Surface Mount Transient Voltage Suppressor
66W, 1V 43V Surface Mount Transient Voltage Suppressor FEATURES AEC-Q11 qualified Junction passivation optimized design technology T J =175 C capability suitable for high reliability and automotive requirement
More information5A, 20V - 200V Surface Mount Schottky Barrier Rectifier
52C - 520C 5A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information200W, 5V - 100V Surface Mount Transient Voltage Suppressor
200W, 5V - 100V Surface Mount Transient Voltage Suppressor FEATURES Photo Glass passivated junction Low power loss, high efficiency Ideal for automated placement Excellent clamping capability Typical I
More informationDaPeng Elec-tech Co.,Ltd
Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
More information8A, 20V - 100V Surface Mount Schottky Barrier Rectifier
82C - 8C 8A, 20V - 0V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information20A, 100V - 200V Trench Schottky Rectifier
TSSD20L0SW - 20A, 0V - 200V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Low power loss/ high efficiency Ideal for automated placement Guard ring for over-voltage protection High
More informationNPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
More information3A, 50V - 600V Surface Mount Ultrafast Power Rectifier
305S - 360S 3A, 50V - 600V Surface Mount Ultrafast Power Rectifier FEATURES Glass passivated junction Ideal for automated placement Built-in strain relief Ultrafast recovery time for high efficiency Compliant
More information3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
4 32A - 320A 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
32-320 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information8A, 400V V Surface Mount Glass Passivated Rectifier
8A, 400V - 00V Surface Mount Glass Passivated Rectifier FEATURES Low forward voltage drop Ideal for automated placement High surge current capability Compliant to RoHS Directive 2011/65/EU and in accordance
More informationTrench Schottky Rectifier
creat by AR 0C thru 200C FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability -
More informationNPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
More information10A, 100V - 200V Trench Schottky Rectifier
- TSSDL200SW A, 0V - 200V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Low power loss / high efficiency Ideal for automated placement Guard ring for over-voltage protection High
More information5A, 20V - 150V Surface Mount Schottky Barrier Rectifier
5A, 20-50 Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability Compliant
More information3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
32B - 320B 3A, 20-200 Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier
0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge
More informationPRODUCT SPECIFICATION. High Reliability Photocoupler
DATE:6/4/ NO.6P4 ELECTRONICS CORPORATION KS SHEET OF 6 6 Features High Reliability Photocoupler. Current transfer ratio ( CTR:Min. % at IF=mA V CE =V ). High isolation voltage between input and output
More informationGlass Passivated Bridge Rectifiers
FEATURES - Glass passivated junction - Typical I R less than.2μa - High surge current capability - UL Recognized File # E-326243 CREAT BY ART - Integrally molded heatsink provide very low thermal resistance
More informationCREAT BY ART 1A, 30V - 60V Surface Mount Schottky Barrier Rectifiers V RRM I F(AV)
A, 30V - 60V Surface Mount Schottky Barrier Rectifiers SS3M - SS6M FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Compliant to
More information1W, 6.8V - 220V Voltage Regulator Diode
1W, 6.8V - 220V Voltage Regulator Diode FEATURES Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability Compliant to RoHS Directive
More information1A, 50V V Glass Passivated Rectifier
A, 50-000 Glass Passivated Rectifier FEATURES Glass passivated chip junction Excellent high temperature switching High efficiency, low F Ultrafast recovery time for high efficiency Compliant to RoHS Directive
More information5W, 15V Surface Mount Zener Diode
5W, 15V Surface Mount Zener Diode FEATURES Low profile package Ideal for automated placement Glass passivated junction Built-in strain relief Compliant to RoHS Directive 2011/65/EU and in accordance to
More information1.5A, 200V V Surface Mount Rectifiers
SDLW - SMLW.5A, 200V - 000V Surface Mount Rectifiers FEATURES Ideal for automated placement Compact package size High surge current capability Low power loss, high efficiency Compliant to RoHS Directive
More informationP6KE SERIES Taiwan Semiconductor
600W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 0 μs waveform - Fast response time: Typically less than 1.0ps
More information2A, 100V - 200V Surface Mount Ultra Fast Rectifier
2A, 0V - 200V Surface Mount Ultra Fast Rectifier FEATURES Glass passivated junction chip Ideal for automated placement Low profile package Ultra fast recovery time for high efficiency Compliant to RoHS
More information5A, 50V V Surface Mount Rectifier
5A, 50V - 000V Surface Mount Rectifier FEATURES Glass passivated chip junction Ideal for automated placement Low forward voltage drop High current capability High surge current capability Compliant to
More informationSA SERIES Taiwan Semiconductor
500W, 5V - 170V Transient Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 500W surge capability at 10 / 0 μs waveform - Fast response time: Typically less than 1.0ps from
More informationP4KE SERIES Taiwan Semiconductor
400W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 400W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than
More information2A, 50V V High Efficient Surface Mount Rectifier
2A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Glass passivated junction chip Fast switching for high efficiency Compliant
More informationBZW06 SERIES Taiwan Semiconductor
600W, 3V - 376V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at / 0 μs waveform - Fast response time: Typically less than.0ps from
More information3W, 11V - 200V Surface Mount Silicon Zener Diode
3W, 11V - 200V Surface Mount Silicon Zener Diode FEATURES Photo Glass passivated junction Low profile package Ideal for automated placement Built-in strain relief Low inductance Compliant to RoHS Directive
More information1A, 50V - 600V Surface Mount Ultrafast Power Rectifier
5S - 60S A, 50-600 Surface Mount Ultrafast Power Rectifier FEATURES Glass passivated chip junction Ideal for automated placement Ultrafast recovery time for high efficiency Low forward voltage, low power
More information4 PIN DIP LOW INPUT PHOTOTRANSISTOR PHOTOCOUPLER EL8171-G Series
Schematic Features: Current transfer ratio (CTR: 50~300% at I F =0.5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up
More informationTrench Schottky Rectifier
Trench Schottky Rectifier TST30L0CW thru FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge
More informationBZW04 SERIES Taiwan Semiconductor
W, 5.8V - 376V Transient Voltage Suppressor BZW4 SERIES FEATURES - Excellent clamping capability - Low impedance surge resistance - W surge capability at / μs waveform - Very fast response time - Typical
More information2A, 50V - 600V Surface Mount Super Fast Rectifier
2A, 50-600 Surface Mount Super Fast Rectifier FEATURES Glass passivated junction chip Ideal for automated placement Low profile package Super fast recovery time for high efficiency Compliant to RoHS Directive
More information佰鴻工業股份有限公司. BPC-817S. Outline Dimensions. Features: Parameter Symbol Rating Unit
Features: 1. Current transfer ratio (CTR: MIN. 50% at I F =5mA, V CE =5V) 2. High input-output isolation voltage (V ISO =5,000Vrms) 3. Response time (tr: TYP. 4µs at V CE =2V, I C =2mA, R L =100 Ω) 4.
More informationQ825 8-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Feature: UL recognized (File # E338132) Creepage distance > 7.62mm
Feature: Certification & Compliance: High Isolation voltage between input and output Pb free and RoHS Compliant (Viso = 5000V rms) UL recognized (File # E338132) Creepage distance > 7.62mm VDE recognized
More informationUNISONIC TECHNOLOGIES CO., LTD UPC817
UNISONIC TECHNOLOGIES CO., LTD UPC817 4 PIN DIP PHOTOTRANSISTOR DESCRIPTION The UTC UPC817 is a 4 pin DIP phototransistor photocoupler, it uses UTC s advanced technology to provide the customers with high
More information4 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER. EL101X-G Series. Features: Description. Applications
Features: Free halogens compliant Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) (CTR: 63~320% at I F =10mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Compact
More informationK1010 Series. cosmo 4PIN PHOTOTRANSISTOR PHOTOCOUPLER. Schematic. Description. Features. Applications
Description The K series consist of an infrared emitting diode, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
More information3A, 50V V High Efficient Surface Mount Rectifier
4 3AB - 3MB 3A, 50-0 High Efficient Surface Mount Rectifier FEATURES Low power loss, high efficiency Low forward voltage drop Low profile package Fast switching for high efficiency Ideal for automated
More informationK2010 Series. cosmo 6PIN PHOTOTRANSISTOR PHOTOCOUPLER. Schematic. Description. Features. Applications
Description Schematic The K series consist of an infrared emitting diode, optically coupled to a phototransistor detector. 6 They are packaged in a 6-pin DIP package and available in wide-lead spacing
More information500mW High Speed SMD Switching Diode
5mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability - Pb free and
More information4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER. EL2501-G Series. Features: Description. Applications
Features: Halogens free. Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature
More information4N25 Phototransistor Optocoupler General Purpose Type. Features
4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an
More informationPhotocoupler Product Data Sheet LTV-2X7-G (Half pitch series) Spec No. :DS Effective Date: 04/13/2017 Revision: - LITE-ON DCC RELEASE
Product Data Sheet LTV-2X7-G (Half pitch series) Spec No. :DS70-207-0023 Effective Date: 04/3/207 Revision: - LITE-ON DCC RELEASE BNS-OD-FC00/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien Road,
More information1SMA4737-1SMA200Z Taiwan Semiconductor
CREAT BY ART W, 7.5V - 200V Surface Mount Silicon Zener Diodes SMA4737 - SMA200Z FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical
More informationAgilent 4N35 Phototransistor Optocoupler General Purpose Type
Agilent N3 Phototransistor Optocoupler General Purpose Type Data Sheet Description The N3 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor.
More information4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) (CTR: 63~320% at I F =10mA, V CE =5V) High isolation voltage between inputs and output (Viso=5000 V rms) Creepage distance >7.62 mm
More informationData Sheet. HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type. Description
HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
More informationData Sheet. HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type. Features
HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
More informationKP5010 Series. cosmo 6PIN PHOTODARLINGTON PHOTOCOUPLER. Schematic. Description. Features. Applications
Description Schematic The KP51 series consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting 1 6 diode in a 6-pin DIP package and available in wide-lead spacing and SMD
More information佰鴻工業股份有限公司. BPC-817S. Features: Parameter Symbol Rating Unit
Features: 1. Current transfer ratio (CTR: MIN. 50% at I F =5mA, V CE =5V) Outline Dimensions 2. High input-output isolation voltage (V ISO =5,000Vrms) 3. Response time (tr: TYP. 4µs at V CE =2V, I C =2mA,
More informationPhotocoupler Product Data Sheet LTV-100X-G series datasheet LITE-ON DCC RELEASE
Product Data Sheet LTV-100X-G series datasheet Spec No. :DS70-2013-0012 Effective Date: 10/04/2018 Revision: H LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien
More information400W, 10V - 100V Surface Mount Transient Voltage Suppressor
400W, 10V - V Surface Mount Transient Voltage Suppressor FEATURES AEC-Q101 qualified Low profile package Photo Glass passivated junction Excellent clamping capability Moisture sensitivity level: level
More information1.5A, 1000V Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier
RABS5M.5A, 000 Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier FEATURES - Ideal for automated placement, for compact PCB design - High surge current capability - Ultrafast reverse recovery
More informationQ817 series 4-PIN DC INPUT OPTOCOUPLER Feature: Certification & Compliance: Halogen Free
Feature: Certification & Compliance: Halogen Free Pb free and RoHS Compliant High Isolation voltage between input and output UL recognized (File # E338132) (Viso = 5000V rms) VDE recognized (File # 40030457)
More informationGeneral Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-4AL (DO-4) MAJOR RATINGS AND CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0
More informationDescription. Applications. Features: 1. Anode 2. Cathode 3. Emitter 4. Collector. between input and outpu.
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series Schematic Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and outpu (Viso=5000 V rms ) Creepagee
More informationBC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor
Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications
More information5000W, 16V - 100V Surface Mount Transient Voltage Suppressor
5000W, 16V - 100V Surface Mount Transient Voltage Suppressor FEATURES 5000 watts peak pulse power capability at 10/1000μs waveform Ideal for automated placement Photo glass passivated junction Excellent
More informationEVERLIGHT ELETCRONICS CO., LTD
Features: Current transfer ratio (CTR:MIN.50% at I F =5mA,V CE =5V) High isolation voltage between input and output (V iso =5000 Vrms ) Compact dual-in-line package EL816:1-channel type Pb free UL approved
More informationParameter Symbol Rating Unit Forward current. IF 50 ma. P C 150 mw P tot 170 mw V iso 3.75 kv rms T opr - 30 to C.
PC4T PC4T Features. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. % at I F = ma ) 3. Mini-flat package 4. Applicable to soldering reflow. Available
More informationOptocoupler, Phototransistor Output
Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES DC isolation test voltage 5 V RMS Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Programmable logic
More information4 PIN SOP HIGH VOLTAGE PHOTODARLINGTON PHOTOCOUPLER EL452-G Series
EL452-G Series Features: Halogens free High collect-emitter voltage (V CEO = 350V) Current transfer ratio (CTR: Min. 1000% at I F =1mA,V CE =2V) High isolation voltage between input and output (Viso=3750
More information8 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL827 Series
EL827 Series Schematic Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Compact small outline package Pb free and
More information4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER. EL357 Series. Features: Description. Applications
Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=3750 V rms ) Compact small outline package Pb free and RoHS compliant. UL approved
More informationOptocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package
TCMT Series, TCMT4 Series Vishay Semiconductors Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling
More informationOptocoupler, Phototransistor Output, Very High Isolation Voltage
Vishay Semiconductors Optocoupler, Phototransistor Output, 787-4 DESCRIPTION CNY64 CNY65 CNY66 Top View A C The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide
More information225mW SMD Switching Diode
225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant
More informationOptocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package
TCMT Series, TCMT4 Series Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling
More information4N2X Series 4N3X Series H11AX Series 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER. Features: Description. Applications
Features: 4N2X series: 4N25, 4N26, 4N27, 4N28 4N3X series: 4N35, 4N36, 4N37, 4N38 H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5 High isolation voltage between input and output (Viso=5000 V rms) Creepage
More informationOptocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package
Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package 22628- DESCRIPTION The series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon
More informationTSC873 NPN Silicon Planar High Voltage Transistor
TO-92 Pin Definition: SOT-223 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector 3. Base 1. Base 2. Collector 3. Emitter BV CBO BV CEO I C V CE(SAT) 600V 400V 1A 0.5V @ I C / I B = 500mA / 100mA Features
More information