Parameter Symbol Rating Unit Forward current. IF 50 ma. P C 150 mw P tot 170 mw V iso 3.75 kv rms T opr - 30 to C.
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1 PC4T PC4T Features. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. % at I F = ma ) 3. Mini-flat package 4. Applicable to soldering reflow. Available tape-packaged products Applications. Programmable controllers Package Specifications Model No. Package Specification PC4T Taping diameter 78mm (7pcs. ) Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption Outline Dimensions Anode mark 2.4 ± ±.2. ± ±.3 Anode 2 Cathode Model No. 4.4 ±.2.4 ±. C.4 (Input side) Emitter 4 Collector ( Unit : mm) Internal connection diagram ± ±. Absolute Maximum Ratings Input Output ( Ta= 2 C) Parameter Symbol Rating Unit Forward current IF ma * Peak forward current I FM A Reverse voltage V R 6 V Power dissipation P 7 mw Emitter-collector voltage V ECO 6 V *2 Surge endurance Esj 2 mj Collector current IC ma Collector power dissipation Total power dissipation *3 Isolation voltage P C mw P tot 7 mw V iso 3.7 kv rms T opr - 3 to + C Operating temperature Storage temperature T stg - 4 to + 2 C *4 Soldering temperature T sol 26 C * Pulse width <=µs, Duty ratio :. *2 Esj = 4V (V CEO ) x ma(i C ) x ms x /2 *3 AC for min., 4 to 6% RH, f = 6Hz *4 For seconds In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
2 Electro-optical Characteristics Input Output Transfer characteristics (Ta = 2 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage V F IF = 2mA V Reverse current IR V R =4V - - µa Terminal capacitance Ct V =, f = khz pf Collector dark current ICEO V CE = 2V, I F = - - µa Collector-emitter IF BV = CEO breakdown voltage IC=.mA 4-6 V Emitter-collector breakdown voltage BV ECO IE =µa, I F = V Collector current IC VCE = 2V, I F = ma ma Collector-emitter IF = ma V CE(sat) saturation voltage IC = ma - -. V Isolation resistance R ISO DCV, 4 to 6% RH x - Ω Floating capacitance Cf V =, f = MHz -.6. pf Response time Rise time t r V CE = 2V, I C = 2mA - - µs Fall time tf R L = Ω µs PC4T Fig. Forward Current vs. 6 Fig. 2 Diode Power Dissipation vs. 2 Forward current IF ( ma ) Diode power dissipation P ( mw )
3 PC4T Fig. 3 Power Dissipation vs. Ambient Temperature Power dissipation Ptot ( mw ) Fig. Forward Current vs. Forward Voltage 2 C Fig. 4 Peak Forward Current vs. Duty Ratio Peak forward current I FM ( ma ) Duty ratio Fig. 6 Current Tranfer Ratio vs. Forward Current Pulse width <= µs 2 2 C 7 C C - 2 C Current tranfer ratio CTR ( % ) V CE =2V.V Forward voltage V F (V)... Fig. 7 Collector Current vs. Collector -emitter Voltage Collector current I C ( ma ) I F = ma ma Pc (max) 3mA 2.mA 2mA mA ma.ma 4.. Collector-emitter voltage V CE (V) Fig. 8 Relative Current Transfer Ratio vs. Relative current transfer ratio ( % ) I F = ma V CE =V
4 PC4T Fig.9 Collector-emitter Saturation Voltage vs. Collector-emitter saturation voltage V CE(sat) (V) I F = ma I C = ma Fig. Collector Dark Current vs. Collector dark current I CEO ( A) -3 V CE = 2V Fig. Response Time vs. Load Resistance Response time ( µ s) V CE =2V I C = 2mA t s t r t f t d Fig.2 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE(sat ) ( V) I C = ma ma 3mA ma 7mA ma.. Load resistance ( k Ω ) Please refer to the chapter Precautions for Use.
5 Application Circuits NOTICE The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)sharp devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication.
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PC2XNNSZF Series DIP pin Reinforced Insulation Type Photocoupler Description PC2XNNSZF Series contains an IRED optically coupled to a phototransistor. It is packaged in a -pin DIP, available in wide-lead
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More informationProperty of LITE-ON Only ` Part No. LTV-217 / 227 / 247 Series Page : 1 of 16
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