PC354N Series. Mini-flat Package, AC Input Photocoupler. PC354N Series
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1 PC34N Series Mini-flat Package, AC Input Photocoupler Description PC34N Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.7kV. Collector-emitter voltage is 8V ( ) and CTR is 2% to 4% at input current of ±1mA. Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. AC input type 4. High collector-emitter voltage (V CEO : 8V ( ) ). High isolation voltage between input and output (V iso(rms) : 3.7kV) Agency approvals/compliance 1. Recognized by UL177 (Double protection isolation), file No. E6438 (as model No. PC34) 2. Package resin : UL flammability grade (94V-) Applications 1. Hybrid substrates that require high density mounting. 2. Programmable controllers (*) Up to Date code "P9" (September 22) V CEO : 3V. From the production Date code "J" (May 1997) to "P9" (September 22), however the products were screened by BV CEO 7V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Date Sep SHARP Corporation
2 Internal Connection Diagram Anode/Cathode Cathode/Anode Emitter Collector Outline Dimensions (Unit : mm) 3.6 ± ±.2 SHARP mark "S" 4 3 Date code Primary side mark ± ±.1 Rank mark Factory identification mark Epoxy resin.3 ± ± ±.2.2 ± Product mass : approx..1g 2
3 Date code (2 digit) 1st digit Year of production 2nd digit Month of production A.D Mark A B C D E F H J K L M N A.D Mark P R S T U V W X A B C Month January February March April May June July August September October November December Mark O N D repeats in a 2 year cycle Factory identification mark Factory identification Mark no mark Country of origin Japan * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Indonesia Philippines China Rank mark Refer to the Model Line-up table 3
4 Absolute Maximum Ratings (T a =2 C) Parameter Symbol Rating Unit Forward current I F ± ma *1 Peak forward current I FM ±1 A Power dissipation P 7 mw Collector-emitter voltage V CEO *4 8 V Emitter-collector voltage V ECO 6 V Collector current I C ma Collector power dissipation P C 1 mw Total power dissipation P tot 17 mw Operating temperature T opr 3 to +1 C Storage temperature T stg 4 to +12 C *2 Isolation voltage V iso (rms) 3.7 kv *3 Soldering temperature 26 C Input Output T sol *1 Pulse width 1µs, Duty ratio :.1 *2 4 to 6%RH, AC for 1 minute, f=6hz *3 For 1s *4 Up to Date code "P9" (September 22) V CEO : 3V. Electro-optical Characteristics Parameter Forward voltage Input Terminal capacitance Collector dark current Output Collector-emitter breakdown voltage Emitter-collector breakdown voltage Transfer characteristics Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Response time Rise time Fall time Symbol V F C t I CEO BV CEO BV ECO I C V CE (sat) R ISO C f t r t f Conditions I F =±2mA V=, f=1khz V CE =V, I F = I C =.1mA, I F = I E =1µA, I F = I F =±1mA, V CE =V I F =±2mA, I C =1mA DCV, 4 to 6%RH V=, f=1mhz V CE =2V, I C =2mA, R L =1Ω MIN * From the production Date code "J" (May 1997) to "P9" (September 22), however the products were screened by BV CEO 7V. * TYP MAX (T a =2 C) Unit V pf na V V ma V Ω pf µs µs 4
5 Model Line-up Package Model No. Taping 3 pcs/reel 7 pcs/reel PC34N PC34N1 PC34NT PC34N1T Rank mark A or no mark A I C [ma] (I F =±1mA, V CE =V, T a =2 C).2 to 4.. to 1. Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
6 Fig.1 Forward Current vs. Ambient Temperature 7 Fig.2 Diode Power Dissipation vs. Ambient Temperature Forward current IF (ma) Diode power dissipation P (mw) Ambient temperature T a ( C) 3 1 Ambient temperature T a ( C) Fig.3 Collector Power Dissipation vs. Ambient Temperature 2 Fig.4 Total Power Dissipation vs. Ambient Temperature 3 Collector power dissipation PC (mw) 1 1 Total power dissipation Ptot (mw) Ambient temperature T a ( C) Ambient temperature T a ( C) Fig. Peak Forward Current vs. Duty Ratio Fig.6 Forward Current vs. Forward Voltage Peak forward current IFM (ma) Pulse width 1µs T a =2 C Forward current IF (ma) Ta=7 C C 2 C C 2 C Duty ratio Forward voltage V F (V) 6
7 Fig.7 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) Forward current I F (ma) V CE =V T a =2 C Fig.8 Collector Current vs. Collector-emitter Voltage Collector current IC (ma) 4 I F =3mA 3 2mA 1mA 2 ma 1 T a =2 C P C (MAX.) 1mA Collector-emitter voltage V CE (V) Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio (%) 1 1 I F =ma V CE =V Fig.1 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) I F =2mA I C =1mA Ambient temperature T a ( C) Ambient temperature T a ( C) Fig.11 Collector Dark Current vs. Ambient Temperature Collector dark current ICEO (A) V CE =V Ambient temperature T a ( C) Fig.12 Response Time vs. Load Resistance Response time (µs) V CE =2V I C =2mA T a =2 C Load resistance R L (kω) t d t s t r t f 7
8 Fig.13 Test Circuit for Response Time Input R L R D V CC Input Output Output Please refer to the conditions in Fig.12 V CE t d t s t r t f 1% 9% Fig.14 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) T a =2 C I C =.ma 1mA 3mA ma 7mA Forward current I F (ma) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 8
9 Design Considerations Design guide While operating at I F <1.mA, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (% degradation over years) into the design consideration. Recommended Foot Print (reference) (Unit : mm) For additional design assistance, please review our corresponding Optoelectronic Application Notes. 9
10 Manufacturing Guidelines Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. ( C) 3 Terminal : 26 C peak ( package surface : 2 C peak) 2 1 Preheat 1 to 18 C, 12s or less Reflow 22 C or more, 6s or less (min) Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 26 C and within 1s. Preheating is within the bounds of 1 to 1 C and 3 to 8s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 4 C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions. 1
11 Cleaning instructions Solvent cleaning: Solvent temperature should be 4 C or below Immersion time should be 3minutes or less PC34N Series Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this device. Regulation substances : CFCs, Halon, Carbon tetrachloride, Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. 11
12 Package specification Tape and Reel package 1. 3 pcs/reel Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C MAX. K C D E Dimensions List A B 12. ±.3. ± ±.1 8. ±.1 H I J K 7.4 ±.1.3 ±. 3.1 ±.1 4. ±.1 2. ±.1 (Unit : mm) F G 4. ±.1 φ Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a 37 b 13. ±1. c 8 ±1. d 13 ±. e 21 ±1. f 2. ±. g 2. ±. Direction of product insertion Pull-out direction [Packing : 3 pcs/reel] 12
13 2. 7pcs/reel Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C C D E K Dimensions List A B 12. ±.3. ± ±.1 8. ±.1 H I J K 7.4 ±.1.3 ±. 3.1 ±.1 4. ±.1 2. ±.1 MAX. (Unit : mm) F G 4. ±.1 φ Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a 18 b 13. ±1. c 8 ±1. d 13 ±. e 21 ±1. f 2. ±. g 2. ±. Direction of product insertion Pull-out direction [Packing : 7pcs/reel] 13
14 Important Notices The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 14
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More information( ) DIN EN : successor standard of DIN VDE0884
PC3SFYVZ Series PC3SFYVZ Series Zero cross type is also available. (PC3SFYVZ Series) VDRM : 600V, Reinforced insulation type Non-zero cross type DIP 6pin Phototriac Coupler for triggering Description PC3SFYVZ
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Product name : PHOTOCOUPLER Model No. : PC817 Business dealing name PC817XNCSZ9F PC817X1CSZ9F PC817X2CSZ9F PC817X3CSZ9F PC817X4CSZ9F 1. These specification sheets include materials protected under copyright
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VDRM : 800V, Reinforced insulation type Zero cross type DIP 6pin Phototriac Coupler for triggering Description reinforced insulation type Phototriac Coupler include an infrared emitting diode (IRED) optically
More informationSYSTEM DEVICE UNIT ELECTRONIC COMPONENTS AND DEVICES DIVISION SHARP CORPORATION SPECIFICATION PHOTOCOUPLER PC817. Business dealing name PC817XNCSP9F
SPEC. No. ED-14P018A ISSUE April 27, 2015 SYSTEM DEVICE UNIT ELECTRONIC COMPONENTS AND DEVICES DIVISION SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR MODEL No. PHOTOCOUPLER PC817 Business dealing
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GP2S60 SMT, Detecting Distance : 0.5mm Phototransistor Output, Compact Reflective Photointerrupter Description GP2S60 is a compact-package, phototransistor output, reflective photointerrupter, with emitter
More informationRest of gate R0.8 ± 0.1 GL483Q. Rest of gate 1.6 ± 0.2
GL48/GL48Q GL483Q Infrared Emitting Diode Features. Narrow beam angle ( θ : TYP. ± 3 ). Radiant flux ( Φ e : MIN..7mW at I F = ma) 3. Compact, high reliability by chip coating (GL48Q/GL483Q ) 4. Long lead
More informationmw Peak emission wavelength λ p IF = 100mA nm Half intensity wavelength λ IF= 100mA nm
GL4/GL3F GL4/GL3F TO-8 Type Infrared Emitting Diode Features. Output : GL4 Φ e MIN. 3.3mW at I F = ma GL3F Φ e MIN..44mW at I F = ma. Beam angle : GL4 θ : TYP. ± 7 GL3F θ : TYP. ± 3. To- 8 type standard
More information3. Isolation voltage between input and output ( Ta= 25 C) Parameter Symbol Rating Unit V CC 7 V. T sol 260 C
PC PC Compact, Surface Mount Ultra-high Speed Response OPIC Photocoupler Features Outline Dimensions ( Unit : mm). Mini-flat package 2. Ultra-high speed response ( tplh, : TYP. ns at R L = Ω ).27 ±.2 Internal
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