HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

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Mitchell Bertram Austin
5 years ago
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1 DESCRIPTION The HDX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. HD HD2 HD3 HD4 4N38 FEATURES High Voltage - HD, HD2, BV CER = 300 V - HD3, HD4, BV CER = 200 V High isolation voltage VAC RMS - minute VAC PEAK - minute Underwriters Laboratory (UL) recognized File# E90700 ANODE 6 BASE APPLICATIONS Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CATHODE 2 N/C 3 5 COLLECTOR 4 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units TOTAL DEVICE Storage Temperature T STG -55 to +50 C Operating Temperature T OPR -55 to +00 C Lead Solder Temperature T SOL 260 for 0 sec C Total Device Power T A = 25 C 260 mw P Derate above 25 C D 3.5 mw/ C EMITTER *Forward DC Current I F 80 ma *Reverse Input Voltage V R 6.0 V *Forward Current - Peak (µs pulse, 300pps) I F (pk) 3.0 A *LED Power T A = 25 C 50 mw P Derate above 25 C D.4 mw/ C

2 ABSOLUTE MAXIMUM RATINGS (Cont.) HD, HD2, HD3, HD4, 4N38 Parameter Symbol Value Units DETECTOR *Power T A = 25 C P D 300 mw Derate linearly above 25 C 4.0 mw/ C HD - HD2 300 *Collector to Emitter Voltage HD3 - HD4 V CER 200 4N38 80 HD - HD2 300 *Collector Base Voltage HD3 - HD4 V CBO 200 V 4N38 80 *Emitter to Collector Voltage HD - HD2 HD3 - HD4 V ECO 7 Collector Current (Continuous) 00 ma ELECTRICAL CHARACTERISTICS (T A = 25 C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER *Forward Voltage () V F ALL.5.5 V Forward Voltage Temp.!VF Coefficient!TA ALL -.8 mv/ C Reverse Breakdown Voltage (I R = 0 µa) BV R ALL 6 25 V Junction Capacitance (V F = 0 V, f = MHz) ALL 50 pf C (V J F = V, f = MHz) ALL 65 pf *Reverse Leakage Current (V R = 6 V) I R ALL µa DETECTOR (R BE = M") HD/2 300 BV *Breakdown Voltage (I CER C =.0 ma, I F = 0) HD3/4 200 Collector to Emitter (No R BE ) (I C =.0 ma) BV CEO 4N38 80 HD/2 300 *Collector to Base (I C = 00 µa, I F = 0) BV CBO HD3/4 200 V 4N38 80 Emitter to Base BV EBO 4N38 7 (I E = 00 µa, I F = 0) Emitter to Collector BV ECO ALL 7 0 (V CE = 200 V, I F = 0, T A = 25 C) 00 na HD/2 *Leakage Current (V CE = 200 V, I F = 0, T A = 00 C) 250 µa I Collector to Emitter (V CER CE = 00 V, I F = 0, T A = 25 C) 00 na HD3/4 (R BE = M") (V CE = 00 V, I F = 0, T A = 00 C) 250 µa (No R BE ) (V CE = 60 V, I F = 0, T A = 25 C) I CEO 4N38 50 na Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at T A = 25 C

3 NORMALIZED ICER - OUTPUT CURRENT HIGH VOLTAGE TRANSFER CHARACTERISTICS HD, HD2, HD3, HD4, 4N38 DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER Current Transfer Ratio Collector to Emitter HD (, V CE = 0 V) HD2 2 (20) (R BE = M") CTR HD3 ma (%) HD4 (0) (, V CE = 0 V) 4N38 2 (20) (, I C = 0.5 ma) HD/2/3/ *Saturation Voltage (R BE = M") V CE (SAT) V (I F = 20 ma, I C = 4 ma) 4N38.0 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit SWITCHING TIMES (V CE =0 V, I CE = 2 ma) t on ALL 5 Non-Saturated Turn-on Time µs Turn-off Time (R L = 00 ") t off ALL 5 ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit Isolation Voltage (I I-O #$ µa, min.) V ISO ALL 5300 (V AC RMS) 7500 (V AC PEAK) Isolation Resistance (V I-O = 500 VDC) R ISO ALL 0 " Isolation Capacitance (f = MHz) C ISO ALL 0.5 pf Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at T A = 25 C Fig. LED Forward Voltage vs. Forward Current Fig.2 Normalized Output Characteristics VF - FORWARD VOLTAGE (V) T A = 55 C 0 0. I F = 50 ma I F = 5 ma V CE = 0 V R BE = 0 6 Ω. T A = 00 C I F - LED FORWARDCURRENT (ma) V CE - COLLECTOR VOLTAGE (V)

4 NORMALIZED ICER - DARK CURRENT NORMALIZED ICBO - COLLECTOR-BASE CURRENT NORMALIZED ICER - OUTPUT CURRENT NORMALIZED ICER - OUTPUT CURRENT HIGH VOLTAGE HD, HD2, HD3, HD4, 4N38 Fig.3 Normalized Output Current vs. LED Input Current Fig.4 Normalized Output Current vs. Temperature 0 V CE = 0 V R BE = 0 6 Ω I F = 20 ma V CE = 0 V R BE = 0 6 Ω I F = 5 ma I F - LED INPUT CURRENT (ma) T A - AMBIENT TEMPERATURE ( C) Fig.5 Normalized Dark Current vs. Ambient Temperature Normalized Collector-Base Current vs. Temperature V CE = 00 V R BE = 0 6 Ω I F = 50 ma V CE = 0 V R BE = 0 6 Ω V CE = 300 V 6 00 V CE = 00 V 5 0 V CE = 50 V T A - AMBIENT TEMPERATURE ( C) I F = 5 ma T A - AMBIENT TEMPERATURE ( C)

5 HD, HD2, HD3, HD4, 4N38 Package Dimensions (Through Hole) Package Dimensions (Surface Mount) 3 2 PIN ID (8.89) (8.38) (6.86) (6.0) 3 2 PIN ID (6.86) (6.0) SEATING PLANE (.78) (.4) (8.89) (8.38) (.78) (.4) (7.62) (5.08) 0.35 (3.43) 0.54 (3.90) 0.00 (2.54) (0.56) 0.06 (0.4) 0.00 (2.54) (0.5) 0.06 (0.40) (0.20) 0 to (7.62) (5.08) 0.65 (4.8) (0.56) 0.06 (0.4) (0.5) 0.00 (2.54) Lead Coplanarity : (0.0) MAX 0.06 (0.40) 0.35 (8.00) (0.30) MAX 0.06 (0.4) (0.20) Package Dimensions (0.4 Lead Spacing) 3 2 PIN ID. Recommended Pad Layout for Surface Mount Leadform (6.86) (6.0) (.78) (.52) SEATING PLANE (5.08) 0.35 (3.43) (8.89) (8.38) (.78) (.4) (0.0) 0.45 (0.54) (7.49) 0.00 (2.54) (0.76) 0.54 (3.90) 0.00 (2.54) 0.06 (0.40) (0.20) (0.56) 0.06 (0.4) 0.00 (2.54) (0.6) 0 to 5 NOTE All dimensions are in inches (millimeters)

6 HD, HD2, HD3, HD4, 4N38 ORDERING INFORMATION Option Order Entry Identifier Description S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel W.W 0.4 Lead Spacing VDE W.300W VDE 0884, 0.4 Lead Spacing 3S.3S VDE 0884, Surface Mount 3SD.3SD VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications ( D Taping Orientation) 4.85 ± ± ± ± ± 0. Ø.55 ± ± ± ± ± ± MAX 0.30 ± 0.20 Ø.6 ± 0. User Direction of Feed NOTE All dimensions are in millimeters

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The HGX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor