Switching Diode SYMBOL. Peak reverse voltage 100 DC blocking voltage Non-repettive peak forward current 300 I FSM. A Power dissipation P D 200
|
|
- Jason Andrews
- 5 years ago
- Views:
Transcription
1 Switching Diode FEATURES - Surface Mounted Device - Fast Switching Speed - Moisture sensitivity level (MSL): - Pb free and RoHS compliant MECHANICAL DATA - Case: Bend lead package - High temperature soldering guaranteed: 260 C/0s - Weight: 4.5mg (approximately) - Marking: T4 APPLICATION eneral purpose switching application MAXIMUM RATINS AND ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak reverse voltage DC blocking voltage Non-repettive peak forward current 300 V RM V R I FM Average rectified output current I O 50 ma Peak forward surge I FSM V V ma 2.0 A Power dissipation P D 200 mw Junction temperature T J 50 C Storage temperature T ST - 55 to +50 C 75 PARAMETER Forward voltage Reverse leakage current Capacitance between terminals Reverse recovery time SYMBOL TEST CONDITION MIN TYP MAX UNIT V F I F = ma 0.75 V V F2 I F = 0mA V V F3 I F = 50mA V V F4 I F = 50mA.25 V I R V R =75V μa I R2 V R =20V 25 na C T V R =0V, f=mhz 2 pf t rr I F =I R =0mA, I rr =0. I R, R L =Ω 4.0 ns
2 RATINS AND CHARACTERISTICS CURVES (T A =25 C unless otherwise noted) 0 Fig. Typical Reverse Characteristics 0 Fig.2 Typical Forward Characteristics Reverse Current (ma) 0 Ta= C Ta=25 C Forward Current (ma) 0 Ta= C Ta=25 C Reverse Voltage (V) Forward Voltage (mv) Fig. 3 Power Derating Curve Fig. 4 Typical Capacitance Characteristics T = 25 f = MHz Power Disspation (mw) Junction Capacitance (pf) Ambient Temperature ( C) Reverse Voltage (V)
3 ORDERIN INFORMATION PACKAE PACKIN -xx (Note ) RV 3K / 7" Reel Note : Part No. Suffix -xx would be used for special requirement EXAMPLE PREFERRED RV RV -N0 RV -N0 RV DESCRIPTION Multiple manufacturer sources, reen compound Defined manufacturer source, reen compound
4 PACKAE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A B C D E F REF 0.9 REF H SUESTED PAD LAYOUT DIM. A B C D Unit (mm) Unit (inch) Typ. Typ
5 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
225mW SMD Switching Diode
225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant
More informationTO-92 NPN Bipolar Transistor
/Y/R/BL FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, R, BL - Pb free and RoHS compliant NPN Bipolar Transistor MECHANICAL DATA - Case: small outline
More information200mW, V High Voltage SMD Switching Diode
200mW, 120-250V High Voltage SMD Switching Diode FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance
More information500mW High Speed SMD Switching Diode
5mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability - Pb free and
More informationBZT55C2V4 thru BZT55C75 Taiwan Semiconductor
5% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ±5% - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate
More informationBZV55C2V4 thru BZV55C75 Taiwan Semiconductor
5% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of ±5% - Hermetically sealed glasss - Moisture sensitivity level - Matte Tin(Sn) lead finish
More information5% Tolerance Zener Diode
5% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 2.V to 75V - VZ Tolerance selection of ±5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free
More information200mW High Speed SMD Switching Diode
200mW High Speed SMD Switching Diode FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 20/65/EU and in accordance to WEEE
More information100mA, 75V Switching Diode
ma, 75V Switching Diode FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level, per J-STD-020 Compliant to RoHS directive
More informationSurface Mount Schottky Barrier Rectifiers
CREAT BY ART LL587 thru LL589 Surface Mount Schottky Barrier Rectifiers FEATURES - Plastic package has carries underwriters - Ideal for automated placement - Surge overload rating to 25 Ampers peak - Reliable
More information2A, 800V V Glass Passivated High Efficient Rectifier
2A, 800V - 1000V Glass Passivated High Efficient Rectifier FEATURES Glass passivated chip junction High efficiency, Low V F High current capability High surge current capability Low power loss Compliant
More information0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier
0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge
More information4 1N4001G-K - 1N4007G-K Taiwan Semiconductor. 1A, 50V V Glass Passivated Rectifier
4 N400 - N4007 A, 50V - 00V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency
More information3A, 50V - 600V Surface Mount Ultrafast Power Rectifier
305S - 360S 3A, 50V - 600V Surface Mount Ultrafast Power Rectifier FEATURES Glass passivated junction Ideal for automated placement Built-in strain relief Ultrafast recovery time for high efficiency Compliant
More informationTrench Schottky Rectifier
Trench Schottky Rectifier TST30L0CW thru FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge
More information3A, 45V - 60V Trench Schottky Rectifier
3A, 45V - 60V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Lower power loss/ high efficiency High forward surge capability
More information2A, 600V Surface Mount Super Fast Rectifier
2A, 600V Surface Mount Super Fast Rectifier FEATURES Fast forward recovery time for high frequency operation Negligible switching losses Reduces switching and conduction losses High surge current capability
More information2A, 50V - 600V Glass Passivated Super Fast Rectifier
SF21 - SF28 2A, 50V - 600V Glass Passivated Super Fast Rectifier FEATURES Glass passivated chip junction High efficiency, Low V F High current capability High surge current capability Low power loss Compliant
More information2A, 100V - 200V Surface Mount Ultra Fast Rectifier
2A, 0V - 200V Surface Mount Ultra Fast Rectifier FEATURES Glass passivated junction chip Ideal for automated placement Low profile package Ultra fast recovery time for high efficiency Compliant to RoHS
More information5A, 50V V Surface Mount Rectifier
5A, 50V - 000V Surface Mount Rectifier FEATURES Glass passivated chip junction Ideal for automated placement Low forward voltage drop High current capability High surge current capability Compliant to
More information1A, 50V V Glass Passivated Rectifier
A, 50-000 Glass Passivated Rectifier FEATURES Glass passivated chip junction Excellent high temperature switching High efficiency, low F Ultrafast recovery time for high efficiency Compliant to RoHS Directive
More information4 1N5400G-K - 1N5408G-K Taiwan Semiconductor. 3A, 50V V Glass Passivated Rectifier
4 1N5400-1N5408 3A, 50V - 0V Glass Passivated Rectifier FEATURES Glass passivated chip junction High current capability, Low V F High reliability High surge current capability Low power loss, high efficiency
More information2A, 50V V High Efficient Surface Mount Rectifier
2A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Glass passivated junction chip Fast switching for high efficiency Compliant
More information1A, 400V ESD Capability Rectifier
A, 400V ESD Capability Rectifier FEATURES High ESD capability Glass passivated chip junction Ideal for automated placement Low forward voltage drop High surge current capability Compliant to RoHS Directive
More information0.8A, 600V V Glass Passivated Bridge Rectifier
MBS6-K - MBS-K 0.8A, 600V - 00V Glass Passivated Bridge Rectifier FEATURES Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge current capability
More information2A, 1000V Glass Passivated Bridge Rectifier
2A, 000V Glass Passivated Bridge Rectifier FEATURES Glass passivated junction Ideal for automated placement Reliable low cost construction utilizing molded plastic technique High surge current capability
More information8A, 400V V Surface Mount Glass Passivated Rectifier
8A, 400V - 00V Surface Mount Glass Passivated Rectifier FEATURES Low forward voltage drop Ideal for automated placement High surge current capability Compliant to RoHS Directive 2011/65/EU and in accordance
More information10A, 100V - 200V Trench Schottky Rectifier
- TSSDL200SW A, 0V - 200V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Low power loss / high efficiency Ideal for automated placement Guard ring for over-voltage protection High
More information20A, 100V - 200V Trench Schottky Rectifier
TSSD20L0SW - 20A, 0V - 200V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Low power loss/ high efficiency Ideal for automated placement Guard ring for over-voltage protection High
More information3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
4 32A - 320A 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information5A, 20V - 200V Surface Mount Schottky Barrier Rectifier
52C - 520C 5A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
32-320 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information2A, 50V - 600V Surface Mount Super Fast Rectifier
2A, 50-600 Surface Mount Super Fast Rectifier FEATURES Glass passivated junction chip Ideal for automated placement Low profile package Super fast recovery time for high efficiency Compliant to RoHS Directive
More information20A, 300V Trench Schottky Rectifier
20A, 300V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ High efficiency High forward surge capability Compliant
More information8A, 20V - 100V Surface Mount Schottky Barrier Rectifier
82C - 8C 8A, 20V - 0V Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More information300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
More information1A, 50V - 600V Surface Mount Ultrafast Power Rectifier
5S - 60S A, 50-600 Surface Mount Ultrafast Power Rectifier FEATURES Glass passivated chip junction Ideal for automated placement Ultrafast recovery time for high efficiency Low forward voltage, low power
More information10A, 100V - 200V Trench Schottky Rectifier
A, 0V - 200V Trench Schottky Rectifier TSDH0CW - TSDH200CW FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency
More information1.5A, 200V V Surface Mount Rectifiers
SDLW - SMLW.5A, 200V - 000V Surface Mount Rectifiers FEATURES Ideal for automated placement Compact package size High surge current capability Low power loss, high efficiency Compliant to RoHS Directive
More information1.5A, 1000V Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier
RABS5M.5A, 000 Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier FEATURES - Ideal for automated placement, for compact PCB design - High surge current capability - Ultrafast reverse recovery
More information30A, 100V - 200V Trench Schottky Rectifiers
30A, 0V - 200V Trench Schottky Rectifiers TSD30H0CW - FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High
More informationPARAMETER SYMBOL TESD5V0V4UA UNIT Marking code on the device
V WM =5V,.8pF ESD Protection Array FEATURES Meet IEC61-4-2(ESD) ±17kV(air), ±12kV(contact) Working Voltage: 5V Compliant to RoHS directive 211/65/EU and in accordance to WEEE 22/96/EC Halogen-free according
More information5A, 20V - 150V Surface Mount Schottky Barrier Rectifier
5A, 20-50 Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability Compliant
More information3W, 11V - 200V Surface Mount Silicon Zener Diode
3W, 11V - 200V Surface Mount Silicon Zener Diode FEATURES Photo Glass passivated junction Low profile package Ideal for automated placement Built-in strain relief Low inductance Compliant to RoHS Directive
More information3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
32B - 320B 3A, 20-200 Surface Mount Schottky Barrier Rectifier FEATURES Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability
More informationGlass Passivated Bridge Rectifiers
FEATURES - Glass passivated junction - Typical I R less than.2μa - High surge current capability - UL Recognized File # E-326243 CREAT BY ART - Integrally molded heatsink provide very low thermal resistance
More information6600W, 10V 43V Surface Mount Transient Voltage Suppressor
66W, 1V 43V Surface Mount Transient Voltage Suppressor FEATURES AEC-Q11 qualified Junction passivation optimized design technology T J =175 C capability suitable for high reliability and automotive requirement
More informationCREAT BY ART 1A, 30V - 60V Surface Mount Schottky Barrier Rectifiers V RRM I F(AV)
A, 30V - 60V Surface Mount Schottky Barrier Rectifiers SS3M - SS6M FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Compliant to
More informationTrench Schottky Rectifier
Trench Schottky Rectifier TST40L0CW thru FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge
More information3A, 400V V Glass Passivated Bridge Rectifier
304G - 307G 3A, 400V - 000V Glass Passivated Bridge Rectifier FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High surge current capability UL
More information3A, 50V V High Efficient Surface Mount Rectifier
4 3AB - 3MB 3A, 50-0 High Efficient Surface Mount Rectifier FEATURES Low power loss, high efficiency Low forward voltage drop Low profile package Fast switching for high efficiency Ideal for automated
More information200W, 5V - 100V Surface Mount Transient Voltage Suppressor
200W, 5V - 100V Surface Mount Transient Voltage Suppressor FEATURES Photo Glass passivated junction Low power loss, high efficiency Ideal for automated placement Excellent clamping capability Typical I
More information300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation
More information200W, 5V - 100V Surface Mount Transient Voltage Suppressor
200W, 5V - 100V Surface Mount Transient Voltage Suppressor FEATURES Photo Glass passivated junction Low power loss, high efficiency Ideal for automated placement Excellent clamping capability Typical I
More information1W, 6.8V - 220V Voltage Regulator Diode
1W, 6.8V - 220V Voltage Regulator Diode FEATURES Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability Compliant to RoHS Directive
More informationGlass Passivated Bridge Rectifier
Glass Passivated Bridge Rectifier UR3KB60 - UR3KB00 FEATURES Ideal for printed circuit board High case dielectric strength High surge current capability UL Recognized File # E-326243 Compliant to RoHS
More informationTrench Schottky Rectifier
creat by AR 0C thru 200C FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability -
More information5W, 15V Surface Mount Zener Diode
5W, 15V Surface Mount Zener Diode FEATURES Low profile package Ideal for automated placement Glass passivated junction Built-in strain relief Compliant to RoHS Directive 2011/65/EU and in accordance to
More informationBC546A/B/C ~ BC550A/B/C Taiwan Semiconductor
NPN Transistor A/B/C ~ BC550A/B/C FEATURES For switching and AF amplifier applications These types are subdivided into three groups A, B and C according to their current gain Moisture sensitivity level
More information0.3W, PNP Plastic-Encapsulate Transistor
0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationFast Switching Plastic Rectifier
Fast Switching Plastic Rectifier TO-0AC ITO-0AC FEATURES Glass passivated chip junction Superfast recovery time for high efficiency Low leakage current High forward surge capability BY9 Series CASE TO-63AB
More informationN-Channel Power MOSFET 100V, 46A, 16mΩ
TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationN-Channel Power MOSFET 40V, 3.9A, 45mΩ
N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance
More informationP6KE SERIES Taiwan Semiconductor
600W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 0 μs waveform - Fast response time: Typically less than 1.0ps
More informationN-Channel Power MOSFET 150V, 1.4A, 480mΩ
TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
More informationN- and P-Channel 60V (D-S) Power MOSFET
TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationN-Channel Power MOSFET 30V, 78A, 3.8mΩ
TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationN-Channel Power MOSFET 40V, 121A, 3.3mΩ
TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature
More informationN-Channel Power MOSFET 100V, 160A, 5.5mΩ
N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS
More informationPart Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel
Small Signal Switching Diode, Dual Features Fast switching speed High conductance Surface mount package ideally suited for automatic insertion Connected in series Lead (Pb)-free component Component in
More informationN-Channel Power MOSFET 60V, 70A, 12mΩ
TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationSA SERIES Taiwan Semiconductor
500W, 5V - 170V Transient Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 500W surge capability at 10 / 0 μs waveform - Fast response time: Typically less than 1.0ps from
More informationGeneral Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-4AL (DO-4) MAJOR RATINGS AND CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0
More informationN-Channel Power MOSFET 800V, 0.3A, 21.6Ω
N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800
More informationN-Channel Power MOSFET 150V, 9A, 65mΩ
TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationN-Channel Power MOSFET 60V, 38A, 17mΩ
N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound APPLICATION SMPS Synchronous Rectification
More information1SMA4737-1SMA200Z Taiwan Semiconductor
CREAT BY ART W, 7.5V - 200V Surface Mount Silicon Zener Diodes SMA4737 - SMA200Z FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical
More informationP4KE SERIES Taiwan Semiconductor
400W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 400W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than
More informationP-Channel Power MOSFET -40V, -22A, 15mΩ
TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
More informationN-Channel Power MOSFET 40V, 135A, 3.8mΩ
TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
More informationDistributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. Miniature Glass Passivated Ultrafast Bridge Rectifier Case Style DFM PRIMARY
More informationDual N-Channel MOSFET 30V, 20A, 20mΩ
Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to
More information400W, 10V - 100V Surface Mount Transient Voltage Suppressor
400W, 10V - V Surface Mount Transient Voltage Suppressor FEATURES AEC-Q101 qualified Low profile package Photo Glass passivated junction Excellent clamping capability Moisture sensitivity level: level
More informationBZV55B2V4 ~ BZV55B75 Taiwan Semiconductor
5mW, 2% Tolerance Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - VZ Tolerance Selection of ±2% - Hermetically sealed glasss - Pb free and RoHS compliant - High reliability glass
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
More informationDual P-Channel MOSFET -60V, -12A, 68mΩ
Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER
More informationDual Common-Cathode Ultrafast Soft Recovery Rectifier
UG(F,B)FCT & UG(F,B)GCT, BYT8(F,B)-300 & BYT8(F,B)-400 Dual Common-Cathode Ultrafast Soft Recovery Rectifier TO-0AB 3 BYT8, UG Series PIN PIN PIN 3 CASE TO-63AB ITO-0AB 3 BYT8F, UGF Series PIN PIN PIN
More information1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes
W, V - 2V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical I R less than 5μA above V -
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology
More informationNPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier BYG2D thru BYG2J FEATURES Low profile package Ideal for automated placement Glass passivated junction Low reverse current Soft recovery characteristics DO-24AC (SMA) Ultrafast
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier FEATURES Low profile package Ideal for automated placement Glass passivated junction Low reverse current Low forward voltage DO-24AC (SMA) MAJOR RATINGS AND CHARACTERISTICS
More informationN-Channel Power MOSFET 700V, 11A, 0.38Ω
N-Channel Power MOSFET 700V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance APPLICATION Power Supply
More informationBC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor
Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier FEATURES Low profile package Ideal for automated placement Glass passivated junction Low reverse current Low forward voltage DO-24AC (SMA) MAJOR RATINGS AND CHARACTERISTICS
More informationN-Channel Power MOSFET 600V, 1A, 10Ω
N-Channel Power MOSFET 600V, 1A, 10Ω FEATURES Advanced planar process 100% avalanche tested Low R DS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1 nc (Typ.) Low Crss typical @4.2pF (Typ.) KEY PERFORMANCE
More informationN-Channel Power MOSFET 100V, 81A, 10mΩ
N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER
More information