1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes

Size: px

Start display at page:

Download "1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes"

Teresa Logan
5 years ago
Views:

1 W, V - 2V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical I R less than 5μA above V - Compliant to RoHS Directive 2/65/EU and in accordance to WEEE 22/96/EC - Halogen-free according to IEC definition MECHANICAL DATA Case: DO-24AL (DO-4) Molding compound, UL flammability classification rating 94V- Part No. with suffix "H" means AEC-Q qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B2 Meet JESD 2 class 2 whisker test Weight:.3g (approximately) DO-24AL (DO-4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T A =25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation at T A =5 C, Derate above 5 C (Note ) Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Operating junction temperature range Storage temperature range Note : Mounted on Cu-Pad size 5mm x 5mm on PCB P D I FSM Watts mw/ C T J - 55 to +5 C T STG - 55 to +5 C A ORDERING INFORMATION PART NO. PART NO. PACKAGE PACKING A DO-4 3 / Ammo box (26mm taping) N47xxA R DO-4 5 / 3" Paper reel MxxxZ H G (Note ) R DO-4 5 / 3" Paper reel (Reverse) B DO-4 / Bulk packing Note : "xx" defines voltage from V (N474A) to 2V (M2Z) EXAMPLE PREFERRED PART NO. PART NO. PART NO. N474AHAG N474A H A G DESCRIPTION AEC-Q qualified Green compound

2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Zener Voltage Test Current Zener Impedance Leakage Current Surge current Device (Note ) Min. Vz@Iz T V Nom. (Note 2) (Note 3) Max. I ZT Z ZT Z ZK I R I R ma Ω Ω ma μa V ma Max. N474A N474A N4742A N4743A N4744A N4745A N4746A N4747A N4748A N4749A N475A N475A N4752A N4753A N4754A N4755A N4756A N4757A N4758A N4759A N476A N476A N4762A N4763A N4764A MZ M2Z M3Z M5Z M6Z M8Z M2Z Notes:. Tolerance and Type Number Designation. The type numbers losted have a standard tolerance on the nominal zener voltage of ±5% 2. Specials Available Include: A. Nominal zener voltages between the voltages shown and tighter voltage tolerances B. Matched sets 3. Zener Voltage (Vz) Measurement. Guarantees the zener voltage when messured at 9 seconds while maintaining the lead temperature(t L ) at 3 C± C, from the diode body 4. Zener Impedance (Zz) Derivation. The zener impedance is derives from the 6 cycle AC voltage, which results when an accurrent having and rms value equal to % of the DC zener current (I ZT or I ZK ) is superimposed on I ZT or I ZK. 5. Surge Current (I R ) Non-Repetitive. The rating listd in the electrical chatacteristics table is maximum peak, non-repetitive, reverse surge current of /2 square wave or equivalent sine wave pulse of /2 second duration superimposed on the test current, I ZT per JEDEC registration; however, actual device capability is as described in Figure.

3 RATINGS AND CHARACTERISTICS CURVES (T A =25 C unless otherwise noted) FIG. POWER TEMPERATURE DERATING CURVE.25 MINIMUM MAXIMUM FIG. 2 TYPICAL FORWARD CHARACTERISTICS P D, MAXIMUM POWER DISSIPATION (WATTS) IF, FORWARD CURRENT (ma) 5 C 7 C 25 C C AMBIENT TEMPERATURE( o C) V F, FORWARD VOLTAGE (V) Zz, DYNAMIC IMPEDANCE (Ω) Iz = ma FIG.3 EFFECT OF ZENER CURRENT ON ZENER IMPEDANCE 47V.8V 27V Iz, ZENER CURRENT (ma) FIG.4 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE Iz(rms)=. Iz(dc) f=khz Iz(rms)=. Iz(dc) f=khz IR, LEAKAGE CURRENT(μA) FIG.5 TYPICAL LEAKAGE CURRENT TYPICAL LEAKAGE CURRENT AT 8% OF NOMINAL BREAKDOWN VOLTAGE Zz, DYNAMIC IMPEDANCE (Ω) 5 ma 2mA.. 25 C 25 C Vz, NOMINAL ZENER VOLTAGE(V) Iz, ZENER CURRENT(mA)

4 FIG.6 TYPICAL CAPACITANCE versus Vz 2 FIG. 7 TEMPERATURE COEFFICIENTS a-range FOR UNITS TO 2 VOLTS C, CAPACITANCE(pF) V BIAS.V BIAS 5% OF BREAKDOWN Vz, FORWARD VOLTAGE (V) θvz, TEMPERATURE COEFFICIENT (mv/ o C) RANGE Vz@ IZT Vz, ZENER VOLTAGE(V) FIG.8 TEMPERATURE COEFFICIENTS 6 FIG. 9 EFFECT OF ZENER CURRENT θvz, TEMPERATURE COEFFICIENT (mv/ o C) b-range FOR UNITS 2 TO VOLTS RANGE Vz@ I ZT Vz, ZENER VOLTAGE(V) θvz, TEMPERATURE COEFFICIENT (mv/ ) Vz@ I ZT 2mA ma NOTE:BELOW 3 VOLTAGE ABOVE a VOLTS CHANGES IN ZENER CURRENT NOT AFFECT TEMPERATURE COEFFICIENTS Vz, ZENER VOLTAGE(V).mA 75 FIG. TYPICAL THERMAL RESISTANCE versus LEAD LENGTH ΘJL, JUNCTION TO LEAD THERMAL RESISTANCE( o C/W) L, LEAD LENGTH TO HEAT SINK(INCHES)

5 P PK, PEAK SURGE POWER WATTS 5% DUTY CYCLE % DUTY CYCLE 2% DUTY CYCLE FIG. MAXIMUM SURGE POWER PW, PULSE WIDTH (ms) V-9V NON-REPETITIVE.8V-V NON-REPETITIVE RECTANGULAR WAVEFORM PRIOR TO INITIAL PULSE

6 PACKAGE OUTLINE DIMENSIONS DO-24AL (DO-4) DIM. Unit (mm) Unit (inch) Min Max Min Max A B C D E MARKING DIAGRAM P/N = G = YWW = F = Specific Device Code Green Compound Date Code Factory Code

7 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.

1SMA4737-1SMA200Z Taiwan Semiconductor

1SMA4737-1SMA200Z Taiwan Semiconductor CREAT BY ART W, 7.5V - 200V Surface Mount Silicon Zener Diodes SMA4737 - SMA200Z FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical