DOWNLOAD OR READ : TRANSIENT ELECTRONICS PULSED CIRCUIT TECHNOLOGY PDF EBOOK EPUB MOBI

Size: px
Start display at page:

Download "DOWNLOAD OR READ : TRANSIENT ELECTRONICS PULSED CIRCUIT TECHNOLOGY PDF EBOOK EPUB MOBI"

Transcription

1 DOWNLOAD OR READ : TRANSIENT ELECTRONICS PULSED CIRCUIT TECHNOLOGY PDF EBOOK EPUB MOBI Page 1

2 Page 2

3 transient electronics pulsed circuit technology transient electronics pulsed circuit pdf transient electronics pulsed circuit technology Academia.edu is a platform for academics to share research papers. (PDF) Steady-state and transient characteristics of 10 kv transient electronics pulsed circuit technology Since 1955, Pearson Electronics has been manufacturing current transformer products. Our website is designed to simplify the selection of the right current probe to fit your application. Pearson Electronics transient electronics pulsed circuit technology Transient Overvoltage Immunity Testing â US standard: ANSI/IEEE C , IEEE recommended practice on surge voltages in low-voltage ac pow er circuits How do you know if your designs are robust enough? Voltage Surge Immunity Rev 9.ppt - IEEE Power Electronics transient electronics pulsed circuit technology Military Test Methods T he following MIL-STD-750 standards provide testing information for the irradiation of parts. These standards may be obtained from the DoD Single Stock Point for Specifications and Standards, 700 Robbins Avenue, Building 4, Section D, Military Performance Specifications - ti.com transient electronics pulsed circuit technology Current single event effects and radiation damage results for candidate spacecraft electronics (PDF) Current single event effects and radiation damage transient electronics pulsed circuit technology An electromagnetic pulse (EMP), also sometimes called a transient electromagnetic disturbance, is a short burst of electromagnetic energy. Such a pulse's origination may be a natural occurrence or man-made and can occur as a radiated, electric, or magnetic field or a conducted electric current, depending on the source.. EMP interference is generally disruptive or damaging to electronic... Electromagnetic pulse - Wikipedia transient electronics pulsed circuit technology Measuring and testing. General information. Connect Instruments to the Corporate Network - modern measurement instruments can be networked using corporate lan, but before you can connect, you must work with your network administrator Rate this link Fundamentals of Signal Analysis - document in pdf format Rate this link Hewlett-Packard Test & Measurement Educators Corner Rate this link Measuring and testing - epanorama.net - Links transient electronics pulsed circuit technology Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 32mÎ Surface mount package ID 5.3A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25â ƒ A ID@TA=70â ƒ A IDM A PD@TA=25â ƒ W W/â ƒ TSTG â ƒ TJ â ƒ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 90 â ƒ/w Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. transient electronics pulsed circuit technology Varistor Overview. To assure reliable operation, transient voltage suppression should be considered at early stages of the design process. This can be a complex task as electronic components are increasingly sensitive to stray electrical transients. Page 3

4 Varistor Metal Oxide Varistor - Littelfuse transient electronics pulsed circuit technology A power inverter, or inverter, is an electronic device or circuitry that changes direct current (DC) to alternating current (AC).. The input voltage, output voltage and frequency, and overall power handling depend on the design of the specific device or circuitry. The inverter does not produce any power; the power is provided by the DC source. A power inverter can be entirely electronic or may... Power inverter - Wikipedia transient electronics pulsed circuit technology The AES 5501 is a system of electronic and mechanical switches, an artificial network, and a unique control station designed for emissions testing to ISO Teseq: AES 5501 transient electronics pulsed circuit technology CWT Ultra-mini Power Electronic Measurements Applications â Switching current waveforms in power electronic circuits, for example â in MOSFET or IGBT devices as small as TO-220 or TO-47 â in bond wires in power devices â to measure power losses in semiconductors â monitoring currents in small inductors, capacitors, snubber circuits, etc CWT Ultra-mini datasheet Layout 1 - PEM Ltd transient electronics pulsed circuit technology CWT Ultra-mini Power ElectronicMeasurements Applications â Switching current waveforms in power electronic circuits, for example â in MOSFET or IGBT devices as small as TO-220 or TO-47 â in bond wires in power devices â to measure power losses in semiconductors â monitoring currents in small inductors, capacitors, snubber circuits, etc Ultra Mini March pemuk.com transient electronics pulsed circuit technology The compact and modular NSG 5500 solution offers the generators necessary for tests with capacitive discharge pulsed interference as called for by ISO, SAE, DIN and JASO, and others. Teseq: NSG 5500 transient electronics pulsed circuit technology Electromagnetics Modeling in COMSOL â RF Module â High-frequency modeling â Microwave Heating â AC/DC Module â Statics and low-frequency modeling Electromagnetics Modeling in COMSOL Multiphysics transient electronics pulsed circuit technology The voltmeter should measure a voltage between 0 and 30 VDC depending on the setting of P1, and should follow any changes of this setting to indicate that the variable voltage control is working properly Vdc Stabilized Power Supply with Current Control 0 transient electronics pulsed circuit technology This is the circuit I've built. Tested on my car Connections as follows: 1- Power: red wire to car battery +12 volts. Later on, I connected it to the 12V accessory line in the fuse box. This line functions only when you turn the car key on. DIY LED Tachomter (RPM Gauge): 4 Steps - instructables.com transient electronics pulsed circuit technology Laser beam turning and milling are 3-D operations and require two simultaneous laser beams to get desired profile in the workpiece ().The beams can be focussed at desired angles with the help of fibre optics. Laser beam machiningâ A review - ScienceDirect transient electronics pulsed circuit technology View and Download Clifford Concept 650 owner's manual online. Concept 650 Car Alarm pdf manual download. Also for: Concept 650mkii, 350hv. CLIFFORD CONCEPT 650 OWNER'S MANUAL Pdf Download. transient electronics pulsed circuit technology FRONT MATTER iii About the Author William J. Riley, Jr. Proprietor Hamilton Technical Services 650 Distant Island Drive Beaufort, SC Phone: Page 4

5 W.J. Riley Hamilton Technical Services Beaufort, SC transient electronics pulsed circuit technology Comments 1. Administrator - January 31, 2006 Trace Width Calculator FAQs. 1a. QUESTION: Very cool PCB width tool! I would like to know its limits though. The CircuitCalculator.com Blog » PCB Trace Width Calculator transient electronics pulsed circuit technology The Lab, Design, and Troubleshooting seminar is my three day seminar on design, lab techniques, and troubleshooting which includes about 1/2 day on EMC in designs, ESD in designs, and troubleshooting and measurement techniques in the design lab. I started this seminar years ago and constantly add and update it. A number of people have said to me that it is the best course on any topic they and... High Frequency Measurements Site Index transient electronics pulsed circuit technology A serial interface published by the EIA for asynchronous data communication over distances up to a few hundred feet. Characterized by a single-ended (not differential) physical layer, it uses one signal wire for transmission, another for reception, and a common wire (ground), plus some timing and control signals. Glossary - All Terms and Definitions Listed Alphabetically transient electronics pulsed circuit technology Eq. shows that the most efficient way to increase the stored energy is to speed up the flywheel. The speed limit is selighter materials develop lower inertial loads at a given speed therefore composite materials, with low density and high tensile strength, is excellent for storing kinetic energy.the maximum energy density with respect to volume and mass, respectively, is: Flywheel energy and power storage systems - ScienceDirect transient electronics pulsed circuit technology Back to Sam's Laser FAQ Table of Contents.; Back to Laser and Parts Sources Sub-Table of Contents. New, Surplus, Walk-In, Mail Order/Web, Kits/Plans (Commercial) The following sections provide links and/or contact info for many companies offering lasers, optics, and laser related equipment and parts as well as some general electronics distributors and surplus outfits, scrap and salvage places... Sam's Laser FAQ - Laser and Parts Sources transient electronics pulsed circuit technology The symposium will cover all relevant aspects of layered semiconductor materials: synthesis and chemical functionalization of these materials, their characterization with advanced techniques, and their applications in various fields. Special emphasis will be dedicated to a tuning of the electronic structure of these materials and to approaches for doping them.scope: Page 5

6 Page 6

SIOV metal oxide varistors

SIOV metal oxide varistors SIOV metal oxide varistors Application notes Date: January 2018 EPCOS AG 2018. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without

More information

variable capacitance diodes the pdf Varicap - Wikipedia PIN diode - Wikipedia Design of PIN diode controlled variable attenuator using

variable capacitance diodes the pdf Varicap - Wikipedia PIN diode - Wikipedia Design of PIN diode controlled variable attenuator using DOWNLOAD OR READ : VARIABLE CAPACITANCE DIODES THE OPERATION AND CHARACTERIZATION OF VARACTOR CHARGE STORAGE AND PIN DIODES FOR RF AND MICROWAVE APPLICATIONS MODERN FRONTIERS IN APPLIED SCIENCE PDF EBOOK

More information

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International

More information

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International

More information

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB

IRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C.  1 TECHNOLOGY. Product Summary MO-036AB PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58

More information

Understanding Design, Installation, and Testing Methods That Promote Substation IED Resiliency for High-Altitude Electromagnetic Pulse Events

Understanding Design, Installation, and Testing Methods That Promote Substation IED Resiliency for High-Altitude Electromagnetic Pulse Events Understanding Design, Installation, and Testing Methods That Promote Substation IED Resiliency for High-Altitude Electromagnetic Pulse Events Tim Minteer, Travis Mooney, Sharla Artz, and David E. Whitehead

More information

VDSS (V) 900. V(TR)DSS (V) 1000 RDS(on)eff (mω) max* 205. QRR (nc) typ 49. QG (nc) typ 10

VDSS (V) 900. V(TR)DSS (V) 1000 RDS(on)eff (mω) max* 205. QRR (nc) typ 49. QG (nc) typ 10 900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon

More information

PRELIMINARY. VDSS (V) 600 V(TR)DSS (V) 750 RDS(on)eff (mω) max* 60. QRR (nc) typ 120. QG (nc) typ 22 PRELIMINARY

PRELIMINARY. VDSS (V) 600 V(TR)DSS (V) 750 RDS(on)eff (mω) max* 60. QRR (nc) typ 120. QG (nc) typ 22 PRELIMINARY PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT

More information

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*

More information

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω

More information

Electromagnetic Compatibility

Electromagnetic Compatibility Electromagnetic Compatibility Introduction to EMC International Standards Measurement Setups Emissions Applications for Switch-Mode Power Supplies Filters 1 What is EMC? A system is electromagnetic compatible

More information

IRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings

IRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part

More information

IRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary

IRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω

More information

FAN MHz TinyBoost Regulator with 33V Integrated FET Switch

FAN MHz TinyBoost Regulator with 33V Integrated FET Switch FAN5336 1.5MHz TinyBoost Regulator with 33V Integrated FET Switch Features 1.5MHz Switching Frequency Low Noise Adjustable Output Voltage Up to 1.5A Peak Switch Current Low Shutdown Current:

More information

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHY63C30CM 300k Rads(Si) A TO-257AA

IRHY63C30CM 300k Rads(Si) A TO-257AA PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM

More information

Use optocouplers for safe and reliable electrical systems

Use optocouplers for safe and reliable electrical systems 1 di 5 04/01/2013 10.15 Use optocouplers for safe and reliable electrical systems Harold Tisbe, Avago Technologies Inc. 1/2/2013 9:06 AM EST Although there are multiple technologies--capacitive, magnetic,

More information

AM V N-CHANNEL ENHANCEMENT MODE MOSFET

AM V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process

More information

IRHF57234SE 100 krads(si) A TO-39

IRHF57234SE 100 krads(si) A TO-39 PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39

More information

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

Todd H. Hubing Michelin Professor of Vehicular Electronics Clemson University

Todd H. Hubing Michelin Professor of Vehicular Electronics Clemson University Essential New Tools for EMC Diagnostics and Testing Todd H. Hubing Michelin Professor of Vehicular Electronics Clemson University Where is Clemson University? Clemson, South Carolina, USA Santa Clara Valley

More information

Simulation Technology for Power Electronics Equipment

Simulation Technology for Power Electronics Equipment Simulation Technology for Power Electronics Equipment MATSUMOTO, Hiroyuki TAMATE, Michio YOSHIKAWA, Ko ABSTRACT As there is increasing demand for higher effi ciency and power density of the power electronics

More information

VDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 85. QRR (nc) typ 90. QG (nc) typ 10

VDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 85. QRR (nc) typ 90. QG (nc) typ 10 TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low

More information

VDSS (V) 650. V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 52. QG (nc) typ 6.2

VDSS (V) 650. V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 52. QG (nc) typ 6.2 650V GaN FET PQFN Series Not recommended for new designs Description The TPH3206L Series 650V, 150mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN

More information

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads

More information

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 60. QRR (nc) typ 136. QG (nc) typ 28 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 60. QRR (nc) typ 136. QG (nc) typ 28 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC 650V GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon

More information

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064

More information

Programmable transient voltage suppressor for SLIC protection. Line TIP or RING 1. Gate (Gn) Line RING or TIP

Programmable transient voltage suppressor for SLIC protection. Line TIP or RING 1. Gate (Gn) Line RING or TIP Programmable transient voltage suppressor for SLIC protection Datasheet - production data Features Programmable transient suppressor Wide negative firing voltage range: VGn = -175 V max. Low dynamic switching

More information

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC7ESN Single N-Channel MOSFET DESCRIPTION SMC7E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

Features. Regulated Converters. RAC01-C RAC02-C 1-2 Watt Single Output RAC0_- C. AC/DC Converter

Features. Regulated Converters. RAC01-C RAC02-C 1-2 Watt Single Output RAC0_- C. AC/DC Converter Features Regulated Converters Description Compact low profile AC-DC power supply mw no load power consumption Class II power supply with kvac isolation Universal input voltage range (~VAC) Low output ripple/noise

More information

SOLUTION RF CIRCUIT DESIGN BY LUDWIG

SOLUTION RF CIRCUIT DESIGN BY LUDWIG page 1 / 5 page 2 / 5 solution rf circuit design pdf Part Number Name Product Family Sample & Buy Design Kits & Evaluation Modules; ADC32RF45 : Dual-Channel, 14-Bit, 3-GSPS RF-Sampling Analog-to-Digital

More information

IRHYS9A7130CM JANSR2N7648T3

IRHYS9A7130CM JANSR2N7648T3 PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM

More information

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 52. QG (nc) typ 6.2 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 52. QG (nc) typ 6.2 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC 650V GaN FET in TO-220 (source tab) Description The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon

More information

IRF9230 JANTXV2N6806

IRF9230 JANTXV2N6806 PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562

More information

2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2

More information

RP1A, RP1B. 1-phase PCB mount solid state relays. Main features. Description

RP1A, RP1B. 1-phase PCB mount solid state relays. Main features. Description 1phase PCB mount solid state relays Main features AC Solid State Relay for PCB mounting Zero switching or instanton Rated operational current: 3, 5 or 5.5 AACrms Rated operational voltage: Up to 480 VACrms

More information

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10. Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored

More information

VDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 130. QRR (nc) typ 54. QG (nc) typ 10

VDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 130. QRR (nc) typ 54. QG (nc) typ 10 650V GaN FET PQFN Series Not recommended for new designs Description The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN

More information

TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low r DS(on)... 0.18 Ω at V GS = 10 V 3-V Compatible Requires No External V CC TTL and CMOS Compatible Inputs V GS(th) = 1.5 V Max ESD Protection Up to 2 kv per MIL-STD-883C, Method 3015 1SOURCE 1GATE

More information

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 130. QRR (nc) typ 54. QG (nc) typ 14 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 130. QRR (nc) typ 54. QG (nc) typ 14 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC 650V GaN FET TO-220 Series Description The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies

More information

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) PD - 90672E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262 IRHF3230 300K Rads (Si)

More information

EMC/EMI MEASURING INSTRUMENTS & ACCESSORIES SHORT-FORM CATALOG 2011

EMC/EMI MEASURING INSTRUMENTS & ACCESSORIES SHORT-FORM CATALOG 2011 EMC/EMI MEASURING INSTRUMENTS & ACCESSORIES SHORT-FORM CATALOG 2011 All-in-one Digital EMI Analyzer 10 Hz - 3 GHz PMM 9010/30P EMI Analyzer 10 Hz - 3 GHz Our trek started in a small laboratory over 25

More information

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION Single P-Channel MOSFET DESCRIPTION SMC5 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high

More information

General Application Notes Remote Sense Remote On / Off Output Trim Series Operation Parallel Operation...

General Application Notes Remote Sense Remote On / Off Output Trim Series Operation Parallel Operation... General... 28 Remote Sense... 29 Remote On / Off... 30 Output Trim... 30 Series Operation... 32 Parallel Operation... 33 Synchronization... 33 Power Good Signal... 34 Electro Magnetic Filter (EMI)... 34

More information

CAR - TEST - SYSTEM 14

CAR - TEST - SYSTEM 14 CAR - TEST - SYSTEM 14 EMC-Test Equipment for electrical installation of vehicles Acc. to ISO 7637-2, ISO 16750-2 ISO 21848 Rise time variable 1-5µs Pulse Waveforms : #1 1-5/2000µs, 600 V, ISO 1-5/1000µs,

More information

THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

THRU-HOLE (Tabless - Low-Ohmic TO-254AA) PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A*

More information

N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description

N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10

More information

TPH3207WS TPH3207WS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) Absolute Maximum Ratings (T C =25 C unless otherwise stated)

TPH3207WS TPH3207WS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) Absolute Maximum Ratings (T C =25 C unless otherwise stated) PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 35 Q rr (nc) 175 Features Low Q rr Free-wheeling diode not required Quiet Tab for reduced EMI at high dv/dt GSD pin layout improves high speed design

More information

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC33S Single P-Channel MOSFET DESCRIPTION SMC33 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a

More information

Symbol Parameter Typical

Symbol Parameter Typical PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications

More information

Electromagnetic and Radio Frequency Interference (EMI/RFI) Considerations For Nuclear Power Plant Upgrades

Electromagnetic and Radio Frequency Interference (EMI/RFI) Considerations For Nuclear Power Plant Upgrades Electromagnetic and Radio Frequency Interference (EMI/RFI) Considerations For Nuclear Power Plant Upgrades November 9, 2016 Presented to: Presented by: Chad Kiger EMC Engineering Manager ckiger@ams-corp.com

More information

z475 Remote DC Power Supply Preliminary

z475 Remote DC Power Supply Preliminary TECHNICAL SPECIFICATIONS z475 Remote DC Power Supply Preliminary 2018 LitePoint, A Teradyne Company. All rights reserved. Overview The z475 remote DC Power supply can provide a stable VCC voltage for PA/FEM/SW

More information

Employing Reliable Protection Methods for Automotive Electronics

Employing Reliable Protection Methods for Automotive Electronics Employing Reliable Protection Methods for Automotive Electronics WHITE PAPER BACKGROUND Automotive systems continue to become more sophisticated with the introduction of new, modified and improved features

More information

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 47. QG (nc) typ 10

VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 47. QG (nc) typ 10 TP65H150LSG 650V GaN FET PQFN Series Preliminary Datasheet Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT

More information

FBG04N30B. Rad Hard egan 40V, 30A, 6mΩ Surface Mount (FSMD-B)

FBG04N30B. Rad Hard egan 40V, 30A, 6mΩ Surface Mount (FSMD-B) Rad Hard egan 40V, 30A, 6mΩ Surface Mount (FSMD-B) Features Low RDS(on) Ultra Low QG For High Efficiency Logic Level Light Weight 0.135 grams New Compact Hermetic Package Source Sense Pin Total Dose -

More information

Downloaded from 1. THE FOLLOWING PAGES OF MIL-STD-462D HAVE BEEN REVISED AND SUPERSEDE THE PAGES LISTED:

Downloaded from  1. THE FOLLOWING PAGES OF MIL-STD-462D HAVE BEEN REVISED AND SUPERSEDE THE PAGES LISTED: NOTICE OF CHANGE METRIC 10 April 1995 MILITARY STANDARD MEASUREMENT OF ELECTROMAGNETIC INTERFERENCE CHARACTERISTICS TO ALL HOLDERS OF : 1. THE FOLLOWING PAGES OF HAVE BEEN REVISED AND SUPERSEDE THE PAGES

More information

AP7301 ELECTROMAGNETIC INTERFERENCE AND COMPATIBILITY L T P C COURSE OBJECTIVES:

AP7301 ELECTROMAGNETIC INTERFERENCE AND COMPATIBILITY L T P C COURSE OBJECTIVES: AP7301 ELECTROMAGNETIC INTERFERENCE AND COMPATIBILITY L T P C 3 0 0 3 COURSE OBJECTIVES: To understand the basics of EMI To study EMI Sources To understand EMI problems To understand Solution methods in

More information

Series AMSRL1-78JZ Up to 12 Watt DC-DC Switching Regulator

Series AMSRL1-78JZ Up to 12 Watt DC-DC Switching Regulator Click on Series name for product info on aimtec.com FEATURES: Picture Coming Soon Models Single output Model Input Voltage (V) Switching Regulator SMD Package Low Quiescent Current Efficiency Up To 95%

More information

2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B

2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*

More information

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC333S Single N-Channel MOSFET DESCRIPTION SMC333 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100 Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered

More information

TPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)

TPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated) PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS

More information

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764

More information

IRHNJ63C krads(si) A SMD-0.5

IRHNJ63C krads(si) A SMD-0.5 PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3

More information

Insulation Test System

Insulation Test System Component Tests Insulation Test System Brief Overview of Phenomena............... 2 Applicable Standards................... 3 Test System Overview.................. 3 Generator Specifications.................

More information

TPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab)

TPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab) 650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,

More information

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC7GS Single P-Channel MOSFET DESCRIPTION SMC7G is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

C B. Models. Models 2MOPP

C B. Models. Models 2MOPP AC/DC Medical Power Supplies High power density 3" x 5" open frame medical power supply 450 Watt with forced air cooling 320 Watt convection cooled without derating up to 50 C Medical certification to

More information

Symbol Parameter Typical

Symbol Parameter Typical PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 110 Q rr (nc) 54 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications

More information

Meeting Military Requirements for EMI and Transient Voltage Spike Suppression

Meeting Military Requirements for EMI and Transient Voltage Spike Suppression APPLICATION NOTE Meeting Military Requirements for EMI and Transient Voltage Spike Suppression DC-DC CONVERTERS AND ACCESSORIES AN004 1.0 Page 1 of 13 Contents: Introduction... 3 Electromagnetic Interference

More information

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A

More information

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC333SN Single P-Channel MOSFET DESCRIPTION SMC333 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.

N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description. N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3

More information

IEEE Electromagnetic Compatibility Standards (Active & Archive) Collection: VuSpec

IEEE Electromagnetic Compatibility Standards (Active & Archive) Collection: VuSpec IEEE Electromagnetic Compatibility Standards (Active & Archive) Collection: VuSpec This value-packed VuSpec represents the most complete resource available for professional engineers looking for best practices

More information

PESD1LIN. 1. Product profile. LIN bus ESD protection diode in SOD General description. 1.2 Features. 1.3 Applications. Quick reference data

PESD1LIN. 1. Product profile. LIN bus ESD protection diode in SOD General description. 1.2 Features. 1.3 Applications. Quick reference data Rev. 01 26 October 2004 Product data sheet 1. Product profile 1.1 General description in very small SOD323 (SC-76) SMD plastic package designed to protect one automotive LIN bus line from the damage caused

More information

IRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D

IRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)

More information

ALL Switch GaN Power Switch - DAS V22N65A

ALL Switch GaN Power Switch - DAS V22N65A Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies.

More information

235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength

235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC

More information

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω

More information

Features. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction

More information

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3

More information

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A 2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4

More information

2N7622U2 IRHLNA797064

2N7622U2 IRHLNA797064 PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*

More information

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE

More information

Features. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel

Features. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max. ID STL10N65M2 650 V 1.00 Ω 4.5 A 1 2 3 4 PowerFLAT

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC3S Single N-Channel MOSFET DESCRIPTION SMC3 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

Description. Line (TIP1 or RING1) Gn1. Gn2. Line (TIP2 or RING2)

Description. Line (TIP1 or RING1) Gn1. Gn2. Line (TIP2 or RING2) Dual line programmable transient voltage suppressor for SLIC protection Datasheet - production data SO-8 Description This device has been especially designed to protect 2 new high voltage, as well as classical

More information

z47524 PXI Quad SPDT RF Changeover Switch Module

z47524 PXI Quad SPDT RF Changeover Switch Module TECHNICAL SPECIFICATIONS z47524 PXI Quad SPDT RF Changeover Switch Module 2017 LitePoint, A Teradyne Company. All rights reserved. Overview The z47524 PXI RF switching module has a bank of four individual

More information

VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)

VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on) 600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster

More information

IRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation.

IRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation. PD-9583H RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary IRHLUB770Z JANSR2N766UB 60V, N-CHANNEL REF: MIL-PRF-9500/7 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL

More information

Overview of EMC Regulations and Testing. Prof. Tzong-Lin Wu Department of Electrical Engineering National Taiwan University

Overview of EMC Regulations and Testing. Prof. Tzong-Lin Wu Department of Electrical Engineering National Taiwan University Overview of EMC Regulations and Testing Prof. Tzong-Lin Wu Department of Electrical Engineering National Taiwan University What is EMC Electro-Magnetic Compatibility ( 電磁相容 ) EMC EMI (Interference) Conducted

More information

RP1A, RP1B. 1-phase PCB mount solid state relays. Main features. Description

RP1A, RP1B. 1-phase PCB mount solid state relays. Main features. Description phase PCB mount solid state relays Main features AC Solid State Relay for PCB mounting Zero switching or instanton Rated operational current: 3, 5 or 5.5 AACrms Rated operational voltage: Up to 480 VACrms

More information

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S N-Channel MOSFET Features 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech

More information

Features. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube N-channel 600 V, 0.06 Ω typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V DS @ T Jmax. R DS(on)max. I D STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching

More information

A Comparison Between MIL-STD and Commercial EMC Requirements Part 2. By Vincent W. Greb President, EMC Integrity, Inc.

A Comparison Between MIL-STD and Commercial EMC Requirements Part 2. By Vincent W. Greb President, EMC Integrity, Inc. A Comparison Between MIL-STD and Commercial EMC Requirements Part 2 By Vincent W. Greb President, EMC Integrity, Inc. OVERVIEW Compare and contrast military (i.e., MIL-STD) and commercial EMC immunity

More information

Features. Regulated Converter. RAC02-SE/277 2 Watt Single Output RAC02- SE/277. AC/DC Converter

Features. Regulated Converter. RAC02-SE/277 2 Watt Single Output RAC02- SE/277. AC/DC Converter Features Regulated Converter Description 5mW max. no load power consumption Efficiency up to 76% Isolated output kvac / min SCP, OVP protection Wide operating temperature range: -4 C to +85 C Universal

More information