Radiation Hardended, 100V, Single 10A, Solid State Relay RDHA710FR10A1NK. Product Summary

Transcription

1 PD Radiation Hardended, 0V, Single, Solid State Relay Product Summary Part Number Voltage Current Configuration Rad Level 0V Single DC 0K 22 PIN FLT PCK Description The RDH7FR1NX is a radiation hardened Solid State Relay in a hermatic package. It is configured as a single pole single throw (SPST) normally open relay. This device is characterized for 0KRad (Si) total ionizing dose. The output MOSFET utilizes International Rectifier s R6 Technology. Features: n Total Dose Capability to 0KRad (Si) n Optically Coupled n 00VDC Input-to-Output and Pin-to-Case Isolation n Hermetically Sealed Ceramic Package bsolute Maximum Tj = 25 C (unless otherwise specified) Parameter Symbol Value Units Output Withstand Voltage V O (OFF) 0 V Input Forward Current I F 40 Output Current g Peak Input Forward Current (t 1.0ms) I O I F pk 0 Peak Output Current g I O pk 20 m Peak Input Reverse Voltage (t 1.0ms) V R 5.0 V Power Dissipation P DISS 4.0 W Operating Temperature Range T J -55 to +125 Storage Temperature Range T S -65 to +150 C Lead Temperature T L 300 Weight 2.5 (Typ) g For notes, please refer to page /18/12

2 Electrical -55 CdT C d+125 C (Unless Otherwise Specified) Parameter Group Test Conditions Symbol Min. Typ. Max. Units Subgroups Output On-Resistance I F = m, I O = 4.0 R DS(ON) Ω Output Leakage Current I F = 0, V OUT = 0V I O µ Input Forward Voltage 1, 2, 3 I F = m V F V Input-to-Output Leakage Current I L-O 1 Pin-to-Case Leakage Current VI-O = 00Vdc, dwell = 5s I CSE µ I F = 0 to m, V Bus = 28V, Turn-On Time def 9,, 11 I O = 2.5, Duty Cycle 1.0% t on I F = 0 to m, V Bus = 28V, Turn-Off Time def 9,, 11 I O = 2.5, Duty Cycle 1.0% t off ms Output Capacitance c I F = 0, V =+25V, f =1MHz, T C = 25C C OSS pf Thermal Resistance c R THJC C/W MTBF MIL-HDBK-217F, TC = 25 C MHrs Notes for Maximum Ratings and Electrical Characteristic Tables Specification is guaranteed by design. Optically coupled Solid State Relays (SSRs) have relatively slow turn-on and turn-off times. Care must be taken to insure that transient currents do not cause a violation of SO. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to ensure compliance with SO requirements as specified in the IRHN67160 data sheet. ƒ Reference Fig. 2 for Switching Test Circuit and Fig. 3 for Switching Test Wave Form. mturn-on Time (ton) includes the turn-on delay and rise time; Turn-off Time (toff) includes the turn-off delay and fall time. n While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as applicable for the application. 2

3 11 node V_OUT_ Cathode V_OUT_- 1-7 Pins 8,, and 17 are no connects. Fig 1: Block Diagram V_Bus VDD RL 11 node V_OUT_ Cathode V_OUT_- 1-7 RS V_IN Fig 2: Switching Test Circuit IF 50% 50% VO % 90% ton toff Fig 3: Switching Test Waveform 3

4 Case Outline and Dimensions - Package - 22 Pin Flat Pack Notes 1. Dimensioning and Tolerancing per SME Y14.5SM Controlling Dimension: Inch 3. Dimensions are shown in inches 4. Tolerances are +/ UOS 4

5 Part Numbering Nomenclature RD Device Type RD = DC Solid State Relay H 7 FR 1 N K Screening Level P = Unscreened, 25 C Electrical Test (Not for Qualification) K = K Level Screening per MIL-PRF (Fully compliant Class K is presently pending DL pproval) Radiation Hardening H = RD Hard Features N = Non Buffered Fast Generation = Current design Poles 1 = Single Pole Radiation Level 7 = 0K Rad (Si) Current = Package FR = 22 Pin Flat Pack Throw Configuration = Single Throw, Normally Open Voltage = 0 Volts IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, US Tel: (978) TC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 05/