GaNSPEC DWG. Standardization for Wide Bandgap Devices:

Transcription

1 Standardization for Wide Bandgap Devices: GaNSPEC DWG Stephanie Watts Butler, PhD, PE Technology Innovation Architect, Texas Instruments GaN Standards for Power Electronic Conversion (GaNSPEC) Devices Working Group (DWG) APEC 2017 March 29th,

2 GaNSPEC DWG GaN Standards for Power Electronic Conversion Devices Working Group JC13.1 JC14.7 and growing... 2

3 Agenda History of Wide Bandgap Standards in Power Electronics Launch of GaNSPEC DWG Call for Action: Purpose of Guidelines & Standards Scope & Mission Organizational Structure Milestones & Progress 3

4 History of ~independent WBG activities before creation of GaNSPEC DWG March 2014, UCSB Institute for Energy Efficiency Technology Roundtable: Stds for GaN Power Electronics (Mishra, NIST) APEC 2015, IEEE PELS Standards Group meets with SiC Focus IEDM 2015, IEEE EDS Holds Discussion: Guidelines and Standards for Reliability Testing in Power Electronics Dec. 2015, IEEE PELS Launches Proposal for International Technology Roadmap for Wide Bandgap WiPDA at VT Nov 2015, Tim McDonald Presents on GaN Reliability Generates Several Volunteers for GaN Standards activity to Tim McDonald & Stephanie Watts Butler JEDEC Board of Directors Investigates Future Needs of Industry Ultimately Issuing Survey Right after APEC

5 Recap of meeting at APEC, March 23, 2016 Goal: Gauge interest in an International working group to create GaN Qual/Test/Datasheet Standards Determine to Launch activity by agreeing upon next steps Finalize Call for Action Agree on focus areas with high level scope Identify sponsoring and associated organizations 11 companies; 2 JEDEC Committees; 2 National Labs; 2 IEEE Divisions; 1 Consortia; 1 Non-Profit Organization SUCCESS! Characteristics & Traits Discussed Start with Guidelines & Best Practices to lay the Foundation for the Creation of Standards Generate Focused Constructive Dialogue Host Webinars; Sessions at Conferences; with sponsoring Organizations Include Customers Must Be Involved to Ensure Applications make sense Consider opportunity to have labs/universities doing blind assessments 5

6 Call for Action: unifying vision Accelerate Maturity of the Industry By Creating Credible Standards for GaN Learn from the Past: Ramp Faster and lower risk to customer Implications Focus is on Application & Usage in End Equipment NOT on Harmonizing Devices, Process Equipment, Etc. 6

7 Mission of GaNSPEC DWG We seek to create standards and guidelines for Test Methods, Reliability & Qualification Procedures, and Datasheet Parametrics for GaN based power conversion devices 7

8 JEDEC JESD94B introduction Application Specific Qualification Using Knowledge Based Test 8

9 GaNSPEC DWG approach in JESD94B Lingo INPUTS PROCESSING {Methodology} MISSION PROFILE GaNSPEC DWG GUIDELINES OUTPUTS: REL PROCEDURE TEST METHODS DATASHEET PARAMETRICS 9

10 Relational Explanation INPUTS MISSION PROFILE -Typical use conditions in the target applications -Targeted Lifetime/ FIT Rates/MTTF Related Application Standards IC/FET Supplier Knowledge of Their Device Datasheet Knowledge: - Parameters Important to Application Types Test Knowledge: - Test Methods for Each Parameter METHODOLOGY REL Knowledge - Failure Mechanisms - How Use AF - Which Stress Methods for Mission OUTPUTS REL Procedure Supplier determines how to implement Test Methods Supplier decides Production/Bench/ Characterization Datasheet Parameters GaN Specific Items 10

11 Working Group Structure Steering team provides guidelines/ templates to focus teams to standardize expectations Steering Team Launch Support Team Focus teams are self directed and set their own goals and plans but submit their work plans to the steering team for approval Reliability Standards and Qualification Procedures Co-Chairs Data Sheet Structure and Parameters Co-Chairs Champion Test Methods and Standards Co-Chairs Liaison: 11

12 Relationship & Clarification: REL to DS REL Procedure: Accelerated Stress - Depends Upon Associated Acceleration Factors - Assumes Which Failure Mechanisms Activated - Sufficient to Estimate Targeted Lifetimes/FIT Test Method: How to Test Parameter - Does NOT Mandate bench or production test - Must Included Parameter REL team expects impact by accelerated stress procedures Datasheet: Parameters - Acknowledges Aging and impact of stress on parameters - Direct relationship to test methods - Only focus on Unique to GaN 12

13 Relationship & Clarification: DS to REL REL Procedure: Accelerated Stress - Depends Upon Associated Acceleration Factors - Assumes Which Failure Mechanisms Activated - Sufficient to Estimate Targeted Lifetimes/FIT - Considers Specific Application - Addresses any relevant standards Mission Profile Test Method: How to Test Parameter - Does NOT Mandate bench or production test - Must Included Parameter REL team expects impact by accelerated stress procedures - Must include parameters deemed critical by Datasheet Datasheet: Parameters - Enable Effective, Efficient, Correct Usage in Application - Complies to Application Relevant Standards - Acknowledges Aging and impact of stress on parameters - Direct relationship to test methods - Only Focus on Unique to GaN 13

14 Is/Is NOT of GaNSPEC DWG We are: Focused on industry standards Focused on GaN power conversion device Standards Focused on GaN on Silicon based lateral structure, power conversion devices Comprised of GaN Producers, users, researchers and non profit agencies Sponsored by multiple organizations /agencies (JEDEC, IEEE) An independent working group aligned with other organizations/agencies Play to Play model of engagement & participation We are NOT: Colluding Focused or working on SiC device Standards Working on RF GaN device standards Working on GaN epitaxy (or heteroepitaxy) or substrate standards Created by or controlled by any one organization or agency US participation only 14

15 Major Milestones for Each Focus Team WiPDA2016: Review existing literature and data and propose focus area GaN specific topics we need to cover Different for each of our three focus areas Will sometimes be interconnected: HTRB reliability test procedure, Dynamic Rds-on test method and datasheet nomenclature APEC2017: Validation of Proposed Topics Lists Exchange of ideas for guidelines & Best Practices between teams WiPDA2017: Propose Guidelines & Best Practices Can be based on public information Guidelines are more easily agreed and approved than are standards Guidelines represent progress that will already help with industry adoption Work to achieve Standards based upon proposed guidelines This phase may require that more detailed information be shared May take longer to achieve the needed sharing and consensus JEDEC is Organization to move Guidelines into Standards 15

16 Timeline & Status of Working Group Suggestion Began at WiDPA2015 Discussion Continued at PowerAmerica Review Launch at APEC2016 JEDEC BOD Survey spotlights Working Group JEDEC 14.7 Sponsorship JEDEC Wide Meeting Discussion Charter Docs for Focus Teams Meet with Chairs/Liaisons/Champions 4Q15 1Q16 2Q16 3Q16 4Q16 1Q17 2Q17 3Q17 4Q17 Launch Phase Complete! Focus Teams Launch Continue to Expand Membership Propose Complete Focus Teams Work WIDPA2016 Teams Proposed Items APEC2017: Validate proposed items Work to funnel down to final result WiDPA2017: Proposal for Guideline to lead into JEDEC standard 16

17 Proposed Items for Guidelines/Standards REL List of Failure Mechanisms & Resulting Failure Mode Focusing on Charge Trapping, Charge Injection, Hot Electron, Corrosion, TDDB Like Mechanism, Delam Corresponding Acceleration & Stress Procedure Test Dynamic RDSon Thermal Resistance (only for cascodes) Safe Operating Area (SOA) Datasheet Include effect of Dynamic RDSon Nomenclature of parameters to adjust for uniqueness of GaN power transistors Transistor circuit symbol to reflect distinctive operation GaN HEMTs 17

18 Proposed Items for Guidelines/Standards REL List of Failure Mechanisms & Resulting Failure Mode Focusing on Charge Trapping, Charge Injection, Hot Electron, Corrosion, TDDB Like Mechanism, Delam Corresponding Acceleration & Stress Procedure Test Dynamic RDSon Thermal Resistance (only for cascodes) Safe Operating Area (SOA) Datasheet Include effect of Dynamic RDSon Nomenclature of parameters to adjust for uniqueness of GaN power transistors Transistor circuit symbol to reflect distinctive operation GaN HEMTs 18

19 Key Takeaways Recognition of Standards Ability to Increase Ramp of Application Important to Agree on the Call for Action Expanding Upon Existing Standards Organization Structure Conducive to Effective Work Active Engagement with Organizations, Universities, Consortia Defined Path from Best Practices and Guidelines to Formal Industry Standards (JEDEC) 19

20 Acknowledgements Tim McDonald, Infineon Mikhail Guz, Consultant, IP and Technology Experts The many folks of the GaNSPEC Teams, including REL Co-Chairs: Kurt Smith (Transphorm) Mark Wasilewski (ON) Sameh Khalil (Infineon) Test Co-Chairs: Deepak Veereddy (Infineon) Chris Velador (JC13.1; SEMTECH) Datasheet Co-Chairs Peter Di Maso (GaNSystems), Phuong Le (Independent Consultant) Liaisons: Bob Kaplar (Sandia); Kurt Smith (Transphorm); Deepak Veereddy (Infineon) The University Community Our sponsoring and associated organizations: ARL, Sandia, IEEE EDS, IEEE PELS, PSMA, PowerAmerica, JEDEC 20

21 Global Standards for the Microelectronics Industry JEDEC has developed standards with industry-wide, international acceptance since JEDEC s member companies are worldwide and represent a large proportion of the microelectronics industry. JEDEC partners with other standards groups such as IEC, ANSI, ESDA, China Electronics Standardization Institute (CESI), JEITA JEDEC formed its first task groups in China in 2016 Over 1,000 JEDEC standards and publications serving all segments of the microelectronics industry are free for all to download at 21

22 PowerAmerica is a U.S Department of Energy WBG Semiconductor Manufacturing Institute The U.S Department of Energy launched the PowerAmerica Institute under the initiative of National Network of Manufacturing Institutes (NNMI) to commercialize Wide Band Gap (WBG) power devices. PowerAmerica is located in Raleigh NC and is managed by North Carolina State University. PowerAmerica is accelerating commercialization of wide bandgap semiconductor technologies by addressing critical items such as reliability and demonstrating performance in industrial applications. To learn more about how PowerAmerica s ecosystem is accelerating the adoption of wide bandgap technologies and how universities are collaboratively engaged with industry, visit 22

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