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1 YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C V GS = 1V 8.4A V GS = 4.5V 6.8A This new generation MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications General Purpose Interfacing Switch Power Management Functions Features.6mm Profile Ideal for Low Profile Applications PCB Footprint of 4mm 2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green evice (Note 3) Mechanical ata Case: U-FN22-6 (Type F) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-ST-2 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-ST-22, Method 28 Weight:.65 grams (Approximate) U-FN22-6 U-FN22-6 (Type F) G Pin1 S Top View Bottom View Pin Out Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging -7 U-FN22-6 (Type F) 3,/Tape & Reel -13 U-FN22-6 (Type F) 1,/Tape & Reel Notes: 1. No purposely added lead. Fully EU irective 22/95/EC (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + Cl) and <1ppm antimony compounds. 4. For packaging details, go to our website at Marking Information U-FN22-6 (Type F) Y1 Y1 = Product Type Marking Code YM = ate Code Marking Y = Year (ex: C = 215) M = Month (ex: 9 = September) ate Code Key Year Code C E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov ec Code O N 1 of 7
2 Maximum Ratings A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS 3 V Gate-Source Voltage V GSS ±2 V Continuous rain Current (Note 6) V GS = 1.V Steady T A = +25 C 8.4 I State T A = +7 C 6.7 A Continuous rain Current (Note 6) V GS = 4.5V Steady T A = +25 C 6.8 I State T A = +7 C 5.4 A Pulsed rain Current (1µs pulse, duty cycle = 1%) I M 4 A Maximum Body iode Continuous Current (Note 6) I S 2 A Avalanche Current (Note 7) L =.1mH I AS 11.4 A Avalanche Energy (Note 7) L =.1mH E AS 6.5 mj Thermal Characteristics Total Power issipation (Note 5) T A = +25 C.7 P T A = +7 C.4 W Thermal Resistance, Junction to Ambient (Note 5) Steady State R JA 18 C/W Total Power issipation (Note 6) T A = +25 C 1.8 P T A = +7 C 1.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State R JA 7 C/W Operating and Storage Temperature Range T J, T STG -55 to +15 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) rain-source Breakdown Voltage BV SS 3. V V GS = V, I = 25μA Zero Gate Voltage rain Current T J = +25 C I SS 1. A V S = 24V, V GS = V Gate-Source Leakage I GSS ±1 na V GS = ±2V, V S = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH) V V S = V GS, I = 25μA Static rain-source On-Resistance R S(ON) V GS = 1V, I = 9.A mω V GS = 4.5V, I = 7.A iode Forward Voltage V S 1.2 V V GS = V, I S = 2A YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss 393 pf V S = 15V, V GS = V, Output Capacitance C oss 173 pf f = 1.MHz Reverse Transfer Capacitance C rss 27 pf Gate Resistance R g 1.1 Ω V S = V, V GS = V, f = 1.MHz Total Gate Charge (V GS = 1V) Q g 7. nc Total Gate Charge (V GS = 4.5V) Q g 3.6 nc Gate-Source Charge Q gs.9 nc V = 15V, I = 9A Gate-rain Charge Q gd 1.5 nc Turn-On elay Time t (ON) 1.8 ns Turn-On Rise Time t R 1.9 ns V = 15V, V GS = 1V, Turn-Off elay Time t (OFF) 7.5 ns R G = 6Ω, I = 9A Turn-Off Fall Time t F 2.4 ns Reverse Recovery Time t RR 1 ns I F = 9A, di/dt = 1A/μs Reverse Recovery Charge Q RR 2.6 nc Notes: 5. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. evice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I AS and E AS rating are based on low frequency and duty cycles to keep T J = +25 C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7
3 R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) R S(ON), RAIN-SOURCE ON-RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) AVANCE INFORMATION V GS = 1.V V GS = 6.V V GS = 4.5V V GS = 4.V V GS = 3.V V S = 5V V GS = 2.5V V GS = 2.2V V S, RAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic V GS = 4.5V.6 I = 9.A I = 7.A 4 2 V GS = 1V I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic V GS = 1V V GS = 1V, I = 9.A V GS = 4.5V, I = 7.A Figure 5. Typical On-Resistance vs. rain Current and Junction Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Junction Temperature 3 of 7
4 V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) AVANCE INFORMATION R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) V GS(TH), GATE THRESHOL VOLTAGE (V) V GS = 4.5V, I = 7.A I = 1mA I = 25μA V GS = 1V, I = 9.A T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Junction Temperature T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Junction Temperature V GS = V f=1mhz 2 C iss 15 1 C oss 1 T J = 125 o C T J = 85 o C T J = 25 o C 5 T J = 15 o C T J = -55 o C C rss V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current V S, RAIN-SOURCE VOLTAGE (V) Figure 1. Typical Junction Capacitance 1 1 R S(ON) Limited P W =1µs V S = 15V, I = 9A Q g (nc) Figure 11. Gate Charge 1.1 P W =1ms P W =1ms P W =1ms P W =1s T J(Max) = 15 T C = 25 Single Pulse UT on 1*MRP Board V GS = 1V P W =1s C V S, RAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7
5 r(t), TRANSIENT THERMAL RESISTANCE 1.1 =.7 =.5 =.3 =.1 =.5 =.9 =.2 =.1 =.5 =Single Pulse R θja (t) = r(t) * R θja R θja = 147 /W uty Cycle, = t1 / t2 1E t1, PULSE URATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7
6 Package Outline imensions Please see for the latest version. U-FN22-6 (Type F) A 2a E E2a z1 z(4x) e3 k2 k e e4 2 k1 b z2 e2 A1 E2 A3 L Seating Plane U-FN22-6 (Type F) im Min Max Typ A A A b a E E E2a e.65 BSC e2.863 BSC e3.7 BSC e4.325 BSC k.37 BSC k1.15 BSC k2.36 BSC L z.2 BSC z1.11 BSC z2.2 BSC All imensions in mm Suggested Pad Layout Please see for the latest version. U-FN22-6 (Type F) X3 Y3 Y2 Pin1 C X X1 Y Y1 Y4 imensions Value (in mm) C.65 X.4 X1.48 X2.95 X3 1.7 Y.425 Y1.8 Y Y Y4 2.3 X2 6 of 7
7 IMPORTANT NOTICE IOES INCORPORATE MAKES NO WARRANTY OF ANY KIN, EXPRESS OR IMPLIE, WITH REGARS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIES OF MERCHANTABILITY AN FITNESS FOR A PARTICULAR PURPOSE (AN THEIR EQUIVALENTS UNER THE LAWS OF ANY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 216, iodes Incorporated 7 of 7
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Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationGreen. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationDMNH6021SPDQ. Product Summary. Features and Benefits ADVANCE INFORMATION ADVANCED INFORMATION. Description and Applications.
DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationGreen SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationBC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationGreen. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel
Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationApplications. Tape and Reel Device Qualification Packaging AL5802LP4 Commercial X2-DFN ,000/Tape & Reel -7
Description The combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Pin Assignments The LED
More informationPART OBSOLETE - USE ZXGD3111N7. Features. GND GND Vcc GATE. GATE Top View Pin-Out
PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
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P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
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3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
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Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
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Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDF-13 AEC-Q101 D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free
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N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound APPLICATION SMPS Synchronous Rectification
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P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
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N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS
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YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
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NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
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